ACS Publications. Most Trusted. Most Cited. Most Read
Al2O3-Induced Sub-Gap Doping on the IGZO Channel for the Detection of Infrared Light

OR SEARCH CITATIONS

My Activity
Publications

Figure 1Loading Img
Download Hi-Res ImageDownload to MS-PowerPointCite This:ACS Appl. Electron. Mater. 2020, 2, 5, 1478-1483
    Article

    Al2O3-Induced Sub-Gap Doping on the IGZO Channel for the Detection of Infrared Light
    Click to copy article linkArticle link copied!

    • Jaeun Kim
      Jaeun Kim
      Department of Advanced Materials Engineering, Chungbuk National University, 1 Chungdae-ro, Seowon-gu, Cheongju, Chungbuk 28644, Republic of Korea
      More by Jaeun Kim
    • Tae Hyeon Kim
      Tae Hyeon Kim
      Department of Advanced Materials Engineering, Chungbuk National University, 1 Chungdae-ro, Seowon-gu, Cheongju, Chungbuk 28644, Republic of Korea
      More by Tae Hyeon Kim
    • Seyoung Oh
      Seyoung Oh
      Department of Advanced Materials Engineering, Chungbuk National University, 1 Chungdae-ro, Seowon-gu, Cheongju, Chungbuk 28644, Republic of Korea
      More by Seyoung Oh
    • Jae Hyeon Nam
      Jae Hyeon Nam
      Department of Advanced Materials Engineering, Chungbuk National University, 1 Chungdae-ro, Seowon-gu, Cheongju, Chungbuk 28644, Republic of Korea
      More by Jae Hyeon Nam
    • Hye Yeon Jang
      Hye Yeon Jang
      Department of Advanced Materials Engineering, Chungbuk National University, 1 Chungdae-ro, Seowon-gu, Cheongju, Chungbuk 28644, Republic of Korea
      More by Hye Yeon Jang
    • Yonghun Kim
      Yonghun Kim
      Materials Center for Energy Convergence, Surface Technology Division, Korea Institute of Materials Science (KIMS), 797 Changwondaero, Sungsan-gu, Changwon, Gyeongnam 51508, Republic of Korea
      More by Yonghun Kim
    • Naohito Yamada
      Naohito Yamada
      Graduate School of Chemical Sciences and Engineering, Hokkaido University, Sapporo 060-8628, Japan
      More by Naohito Yamada
    • Hikaru Kobayashi
      Hikaru Kobayashi
      Graduate School of Chemical Sciences and Engineering, Hokkaido University, Sapporo 060-8628, Japan
      More by Hikaru Kobayashi
    • So-Young Kim
      So-Young Kim
      Center for Emerging Electronic Devices and Systems, Gwangju Institute of Science and Technology, Cheomdan-gwagiro 123, Buk-gu, Gwangju 61005, Korea
      School of Materials Science and Engineering, Gwangju Institute of Science and Technology, Cheomdan-gwagiro 123, Buk-gu, Gwangju 61005, Korea
      More by So-Young Kim
    • Byoung Hun Lee
      Byoung Hun Lee
      Center for Emerging Electronic Devices and Systems, Gwangju Institute of Science and Technology, Cheomdan-gwagiro 123, Buk-gu, Gwangju 61005, Korea
      School of Materials Science and Engineering, Gwangju Institute of Science and Technology, Cheomdan-gwagiro 123, Buk-gu, Gwangju 61005, Korea
      More by Byoung Hun Lee
      Orcidhttp://orcid.org/0000-0002-4540-7731
    • Hiroki Habazaki
      Hiroki Habazaki
      Graduate School of Chemical Sciences and Engineering, Hokkaido University, Sapporo 060-8628, Japan
      Faculty of Engineering, Hokkaido University, Sapporo, Hokkaido 060-8628, Japan
      More by Hiroki Habazaki
      Orcidhttp://orcid.org/0000-0002-7172-8811
    • Woojin Park*
      Woojin Park
      Department of Advanced Materials Engineering, Chungbuk National University, 1 Chungdae-ro, Seowon-gu, Cheongju, Chungbuk 28644, Republic of Korea
      *Email: [email protected]
      More by Woojin Park
    • Byungjin Cho*
      Byungjin Cho
      Department of Advanced Materials Engineering, Chungbuk National University, 1 Chungdae-ro, Seowon-gu, Cheongju, Chungbuk 28644, Republic of Korea
      *Email: [email protected]
      More by Byungjin Cho
      Orcidhttp://orcid.org/0000-0002-3885-8139
    Other Access OptionsSupporting Information (1)

    ACS Applied Electronic Materials

    Cite this: ACS Appl. Electron. Mater. 2020, 2, 5, 1478–1483
    Click to copy citationCitation copied!
    https://doi.org/10.1021/acsaelm.0c00228
    Published May 4, 2020
    Copyright © 2020 American Chemical Society
    Request reuse permissions

    Abstract

    Click to copy section linkSection link copied!
    Abstract Image

    Wide band gap oxide materials with additional infrared (IR) photosensing have rarely been reported because of the lack of the IR-associated sub band gap absorption. In this work, we report that the insertion of a thin aluminum oxide (Al2O3) layer between the Al electrode and indium gallium zinc oxide (IGZO) channel, deposited by atomic layer deposition, enables the material to absorb 850 nm IR light as well as light at visible wavelengths (400 and 530 nm). UV–visible absorption and photoluminescence measurements showed that the Al2O3/IGZO-stacked channel layers could induce additional IR absorption and, consequently, IR-excited charge carriers owing to sub-gap doping within the IGZO band gap. Notably, this approach provides the synergetic effect of enabling IR detection as well as improving the contact properties in the IGZO transistor. Furthermore, the clear dynamic photoswitching behavior was observed only for the Al2O3/IGZO transistor device, revealing a photocurrent 50 times higher than the device containing only IGZO. Thus, the simple approach of engineering the interface of wide band gap oxide materials made it possible to introduce unexpected dual-band gap photosensing characteristics, thereby extending the range of photonic applications of these materials.

    Copyright © 2020 American Chemical Society

    Subjects

    what are subjects

    Keywords

    what are keywords

    Read this article

    To access this article, please review the available access options below.

    Get instant access

    Purchase Access

    Read this article for 48 hours. Check out below using your ACS ID or as a guest.

    Recommended

    Access through Your Institution

    You may have access to this article through your institution.

    Your institution does not have access to this content. Add or change your institution or let them know you’d like them to include access.

    Supporting Information

    Click to copy section linkSection link copied!

    The Supporting Information is available free of charge at https://pubs.acs.org/doi/10.1021/acsaelm.0c00228.

    • AES elemental depth profile of the IGZO only sample without the Al2O3 layer, AFM surface morphology images of bare IGZO and Al2O3/IGZO films, extraction method of series resistance, transfer characteristics of the IGZO transistor and Al2O3/IGZO transistor under various light intensities (0.5–4.0 mW/cm2), transfer curves and photocurrent depending on Al2O3 thickness, PL spectra of IGZO and Al2O3/IGZO films in the IR range, and schematic of the energy band diagram of IGZO with Al2O3-induced energy states (PDF)

    Terms & Conditions

    Most electronic Supporting Information files are available without a subscription to ACS Web Editions. Such files may be downloaded by article for research use (if there is a public use license linked to the relevant article, that license may permit other uses). Permission may be obtained from ACS for other uses through requests via the RightsLink permission system: http://pubs.acs.org/page/copyright/permissions.html.

    Cited By

    Click to copy section linkSection link copied!

    This article is cited by 20 publications.

    1. Anamika Sen, Heekyeong Park, Pavan Pujar, Arindam Bala, Haewon Cho, Na Liu, Srinivas Gandla, Sunkook Kim. Probing the Efficacy of Large-Scale Nonporous IGZO for Visible-to-NIR Detection Capability: An Approach toward High-Performance Image Sensor Circuitry. ACS Nano 2022, 16 (6) , 9267-9277. https://doi.org/10.1021/acsnano.2c01773
    2. Hongwei Xu, Taikyu Kim, HeeSung Han, Min Jae Kim, Jae Seok Hur, Cheol Hee Choi, Joon-Hyuk Chang, Jae Kyeong Jeong. High-Performance Broadband Phototransistor Based on TeOx/IGTO Heterojunctions. ACS Applied Materials & Interfaces 2022, 14 (2) , 3008-3017. https://doi.org/10.1021/acsami.1c18576
    3. TaeHyun Hong, Hyun-Jun Jeong, Hyun-Mo Lee, Su-Hwan Choi, Jun Hyung Lim, Jin-Seong Park. Significance of Pairing In/Ga Precursor Structures on PEALD InGaOx Thin-Film Transistor. ACS Applied Materials & Interfaces 2021, 13 (24) , 28493-28502. https://doi.org/10.1021/acsami.1c06575
    4. . Oxide Thin Film Transistor Fabrication Processes. 2025, 101-158. https://doi.org/10.1002/9781394200269.ch4
    5. Jin Hyun Ma, Jun Hyung Jeong, Seong Jae Kang, Min Ho Park, Hyoun Ji Ha, Eojin Kim, Seungyun You, Wonsik Kim, Soohyung Park, Seong Jun Kang. High Rejection‐Ratio IGZO Ultraviolet Phototransistor via Additional Solution Processed ZnO Absorption Layer. Advanced Optical Materials 2024, 12 (18) https://doi.org/10.1002/adom.202400166
    6. Do Hyeong Kim, Seyoung Oh, Ojun Kwon, Soo-Hong Jeong, Hyun Young Seo, Eunjeong Cho, Min Jeong Kim, Wondeok Seo, Jung-Dae Kwon, Yonghun Kim, Woojin Park, Byungjin Cho. Designing buried-gate InGaZnO transistors for high-yield and reliable switching characteristics. Journal of Materials Chemistry C 2024, 12 (15) , 5347-5354. https://doi.org/10.1039/D3TC04531E
    7. Bosi Lin, Rundong Hu, Tong Chen, Hang Zhou. 33‐3: High Responsivity and Low Dark Current Phototransistor Based on Perovskite/InZnO Heterostructure. SID Symposium Digest of Technical Papers 2024, 55 (S1) , 275-277. https://doi.org/10.1002/sdtp.17057
    8. Wooseok Jeong, Seong-In Cho, Sang-Hee Ko Park, Jong Beom Ko. Modifying subgap states with hydrogen incorporation from source/drain alloys for oxide phototransistors. Materials Letters 2024, 355 , 135502. https://doi.org/10.1016/j.matlet.2023.135502
    9. Utkarsh Pandey, Akhilesh Kumar Yadav, Nila Pal, Pijush Kanti Aich, Bhola N. Pal. Enhanced sub-band gap photosensitivity by an asymmetric source–drain electrode low operating voltage oxide transistor. Journal of Materials Chemistry C 2023, 11 (43) , 15276-15287. https://doi.org/10.1039/D3TC02911E
    10. Yuseong Jang, Jinkyu Lee, Jinsung Mok, Junhyeong Park, Seung Yoon Shin, Soo-Yeon Lee. Suppression of the redox reaction between the IGZO surface and the reducing agent TMA using fluorine oxidizing agent treatment. RSC Advances 2023, 13 (47) , 33269-33275. https://doi.org/10.1039/D3RA06768H
    11. Xindi Xu, Meng Zhang, Yuyang Yang, Lei Lu, Feng Lin, Man Wong, Hoi‐Sing Kwok. Realization of Visible‐Light Detection in InGaZnO Thin‐Film Transistor via Oxygen Vacancy Modulation through N 2 Treatments. Advanced Electronic Materials 2023, 9 (10) https://doi.org/10.1002/aelm.202300351
    12. Dingwei Li, Huihui Ren, Yitong Chen, Yingjie Tang, Kun Liang, Yan Wang, Fanfan Li, Guolei Liu, Lei Meng, Bowen Zhu. Bidirectionally Photoresponsive Optoelectronic Transistors with Dual Photogates for All‐Optical‐Configured Neuromorphic Vision. Advanced Functional Materials 2023, 33 (42) https://doi.org/10.1002/adfm.202303198
    13. Ji Sook Yang, Sung Hyeon Jung, Cheol Hyoun Ahn, Won Seok Yang, Jeong Jae Kim, Hyung Koun Cho. Highly Sensitive Hybrid Oxide Phototransistors with Photoresponsive Zeolitic‐Imidazolate‐Frameworks for Real‐Time Light Detection. Advanced Optical Materials 2023, 11 (8) https://doi.org/10.1002/adom.202202467
    14. Denice N Feria, Feng-Hsuan Hsu, Yi-Chieh Chan, Bo-Rui Chen, Chang-Jer Wu, Tai-Yuan Lin. The dual-detection mode and improved photoresponse of IGZO-based photodetectors by interfacing with water-soluble biomaterials. Nanotechnology 2022, 33 (24) , 245203. https://doi.org/10.1088/1361-6528/ac55d3
    15. Gangping Yan, Hong Yang, Weibing Liu, Na Zhou, Yanpeng Hu, Yunfei Shi, Jianfeng Gao, Guoliang Tian, Yadong Zhang, Linjie Fan, Guilei Wang, Gaobo Xu, Jinshun Bi, Huaxiang Yin, Chao Zhao, Jun Luo. Mechanism Analysis of Ultralow Leakage and Abnormal Instability in InGaZnO Thin-Film Transistor Toward DRAM. IEEE Transactions on Electron Devices 2022, 69 (5) , 2417-2422. https://doi.org/10.1109/TED.2022.3159266
    16. Chyuan-Haur Kao, Chia-Shao Liu, Shih-Ming Chan, Chih-Chen Kuo, Shang-Che Tsai, Ming-Ling Lee, Hsiang Chen. Effects of NH3 Plasma and Mg Doping on InGaZnO pH Sensing Membrane. Membranes 2021, 11 (12) , 994. https://doi.org/10.3390/membranes11120994
    17. Hyukjoon Yoo, I. Sak Lee, Sujin Jung, Sung Min Rho, Byung Ha Kang, Hyun Jae Kim. A Review of Phototransistors Using Metal Oxide Semiconductors: Research Progress and Future Directions. Advanced Materials 2021, 33 (47) https://doi.org/10.1002/adma.202006091
    18. Huihui Ren, Kun Liang, Dingwei Li, Momo Zhao, Fanfan Li, Hong Wang, Xiaohe Miao, Taofei Zhou, Liaoyong Wen, Qiyang Lu, Bowen Zhu. Interface Engineering of Metal‐Oxide Field‐Effect Transistors for Low‐Drift pH Sensing. Advanced Materials Interfaces 2021, 8 (20) https://doi.org/10.1002/admi.202100314
    19. Tae Hyeon Kim, Woojin Park, Seyoung Oh, So-Young Kim, Naohito Yamada, Hikaru Kobayashi, Hye Yeon Jang, Jae Hyeon Nam, Hiroki Habazaki, Byoung Hun Lee, Byungjin Cho. Unveiling the Role of Al 2 O 3 Interlayer in Indium–Gallium–Zinc–Oxide Transistors. physica status solidi (a) 2021, 218 (6) https://doi.org/10.1002/pssa.202000621
    20. Sungho Park, Byung Jun Kim, Tae Yeon Kim, Eui Young Jung, Kyu-Myung Lee, Jong-Am Hong, Woojin Jeon, Yongsup Park, Seong Jun Kang. Improving the photodetection and stability of a visible-light QDs/ZnO phototransistor via an Al 2 O 3 additional layer. Journal of Materials Chemistry C 2021, 9 (7) , 2550-2560. https://doi.org/10.1039/D0TC05626J
    Download PDF
    Go to ACS Applied Electronic Materials
    Get e-Alerts
    Get e-Alerts

    ACS Applied Electronic Materials

    Cite this: ACS Appl. Electron. Mater. 2020, 2, 5, 1478–1483
    Click to copy citationCitation copied!
    https://doi.org/10.1021/acsaelm.0c00228
    Published May 4, 2020
    Copyright © 2020 American Chemical Society
    Request reuse permissions

    Article Views

    3342

    Altmetric

    -

    Citations

    20
    Learn about these metrics

    Article Views are the COUNTER-compliant sum of full text article downloads since November 2008 (both PDF and HTML) across all institutions and individuals. These metrics are regularly updated to reflect usage leading up to the last few days.

    Citations are the number of other articles citing this article, calculated by Crossref and updated daily. Find more information about Crossref citation counts.

    The Altmetric Attention Score is a quantitative measure of the attention that a research article has received online. Clicking on the donut icon will load a page at altmetric.com with additional details about the score and the social media presence for the given article. Find more information on the Altmetric Attention Score and how the score is calculated.