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Deep-UV-Enhanced Approach for Low-Temperature Solution Processing of IZO Transistors with High-k AlOx/YAlOx Dielectric

  • Alessio Mancinelli*
    Alessio Mancinelli
    Soft Transducers Laboratory, Ecole Polytechnique Fédérale de Lausanne, 2000 Neuchâtel, Switzerland
    *Email: [email protected]
  • Sami Bolat
    Sami Bolat
    Empa-Swiss Federal Laboratories for Materials Science and Technology, 8600 Dübendorf, Switzerland
    More by Sami Bolat
  • Jaemin Kim
    Jaemin Kim
    Soft Transducers Laboratory, Ecole Polytechnique Fédérale de Lausanne, 2000 Neuchâtel, Switzerland
    More by Jaemin Kim
  • Yaroslav E. Romanyuk
    Yaroslav E. Romanyuk
    Empa-Swiss Federal Laboratories for Materials Science and Technology, 8600 Dübendorf, Switzerland
  • , and 
  • Danick Briand*
    Danick Briand
    Soft Transducers Laboratory, Ecole Polytechnique Fédérale de Lausanne, 2000 Neuchâtel, Switzerland
    *Email: [email protected]
Cite this: ACS Appl. Electron. Mater. 2020, 2, 10, 3141–3151
Publication Date (Web):September 5, 2020
https://doi.org/10.1021/acsaelm.0c00444
Copyright © 2020 American Chemical Society
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Abstract

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Solution processing is an attractive alternative to standard vacuum fabrication techniques for the large-area manufacturing of metal oxide (MOx)-based electron devices. Here, we report on thin-film transistors (TFTs) based on a solution-processed indium zinc oxide (IZO) semiconductor utilizing a deep-ultraviolet (DUV)-enhanced curing, which enables a reduction of the annealing temperature to 200 °C. The effects of the DUV light exposure and the subsequent post-annealing parameters on the chemical composition of the IZO films have been investigated using Fourier-transform infrared spectroscopy and X-ray photoelectron spectroscopy. The semiconductor layer has been combined with an high-k aluminum oxide/yttrium aluminum oxide (AlOx/YAlOx) dielectric stack to realize fully solution-processed MOx TFTs at low temperature. The IZO/AlOx/YAlOx TFTs treated for 20 min DUV followed by 60 min at 200 °C exhibited Ion/Ioff of >108, a subthreshold slope (SS) of <100 mV dec–1, and mobility (μsat) of 15.6 ± 4 cm2 V–1 s–1. Devices realized with a reduced semiconductor curing time of 5 min DUV and 5 min at 200 °C achieved Ion/Ioff of >108, a SS <100 mV dec–1, and μsat of 2.83 ± 1.4 cm2 V–1 s–1. The TFTs possess high operational stability under gate bias stress, exhibiting low shifts in the threshold voltage of <1 V after 1000 s. The DUV-enhanced approach reduces the thermal budget required for the curing of solution-processed IZO semiconductors films, paving the way for its further implementation on temperature-sensitive substrates in future.

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The Supporting Information is available free of charge at https://pubs.acs.org/doi/10.1021/acsaelm.0c00444.

  • TGA of the IZO solution, dielectric characterization data, typical TFT electrical characteristics, hysteresis curves of TFTs cured with different protocols, transfer curves obtained from devices cured with different conditions, aging effects on the transfer characteristics for different annealing protocols, in-depth XPS analysis of IZO films; XPS data fitting, GA XRD of the IZO film, and electrical parameters of the fabricated devices (PDF)

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Most electronic Supporting Information files are available without a subscription to ACS Web Editions. Such files may be downloaded by article for research use (if there is a public use license linked to the relevant article, that license may permit other uses). Permission may be obtained from ACS for other uses through requests via the RightsLink permission system: http://pubs.acs.org/page/copyright/permissions.html.

Cited By


This article is cited by 6 publications.

  1. Wei Huang, Xinge Yu, Li Zeng, Binghao Wang, Atsuro Takai, Gabriele Di Carlo, Michael J. Bedzyk, Tobin J. Marks, Antonio Facchetti. Ultraviolet Light-Densified Oxide-Organic Self-Assembled Dielectrics: Processing Thin-Film Transistors at Room Temperature. ACS Applied Materials & Interfaces 2021, 13 (2) , 3445-3453. https://doi.org/10.1021/acsami.0c20345
  2. Yunchae Jeon, Donghyun Lee, Hocheon Yoo. Recent Advances in Metal-Oxide Thin-Film Transistors: Flexible/Stretchable Devices, Integrated Circuits, Biosensors, and Neuromorphic Applications. Coatings 2022, 12 (2) , 204. https://doi.org/10.3390/coatings12020204
  3. Sami Bolat, Evangelos Agiannis, Shih-Chi Yang, Moritz H. Futscher, Abdesselam Aribia, Ivan Shorubalko, Yaroslav E. Romanyuk. Engineering Bilayer AlOx /YAlOx Dielectric Stacks for Hysteresis-Free Switching in Solution-Processed Metal-Oxide Thin-Film Transistors. Frontiers in Electronics 2022, 2 https://doi.org/10.3389/felec.2021.804474
  4. Won-June Lee, Taehyun Kwak, Jun-Gyu Choi, Sungjun Park, Myung-Han Yoon. Solution-processed metal oxide dielectric films: Progress and outlook. APL Materials 2021, 9 (12) , 120701. https://doi.org/10.1063/5.0066014
  5. Rudolf C. Hoffmann, Maciej O. Liedke, Maik Butterling, Andreas Wagner, Vanessa Trouillet, Jörg J. Schneider. Solution synthesis and dielectric properties of alumina thin films: understanding the role of the organic additive in film formation. Dalton Transactions 2021, 50 (25) , 8811-8819. https://doi.org/10.1039/D1DT01439K
  6. Masashi Miyakawa, Mitsuru Nakata, Hiroshi Tsuji, Tatsuya Takei, Shuhei Tanaka, Yoshiki Nakajima. P‐110: Spontaneous Direct Printing Method for Solution‐Processed Metal Oxide Thin‐Film Transistors. SID Symposium Digest of Technical Papers 2021, 52 (1) , 1139-1142. https://doi.org/10.1002/sdtp.14895

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