ACS Publications. Most Trusted. Most Cited. Most Read
My Activity
CONTENT TYPES

Figure 1Loading Img

Deep-UV-Enhanced Approach for Low-Temperature Solution Processing of IZO Transistors with High-k AlOx/YAlOx Dielectric

  • Alessio Mancinelli*
    Alessio Mancinelli
    Soft Transducers Laboratory, Ecole Polytechnique Fédérale de Lausanne, 2000 Neuchâtel, Switzerland
    *Email: [email protected]
  • Sami Bolat
    Sami Bolat
    Empa-Swiss Federal Laboratories for Materials Science and Technology, 8600 Dübendorf, Switzerland
    More by Sami Bolat
  • Jaemin Kim
    Jaemin Kim
    Soft Transducers Laboratory, Ecole Polytechnique Fédérale de Lausanne, 2000 Neuchâtel, Switzerland
    More by Jaemin Kim
  • Yaroslav E. Romanyuk
    Yaroslav E. Romanyuk
    Empa-Swiss Federal Laboratories for Materials Science and Technology, 8600 Dübendorf, Switzerland
  • , and 
  • Danick Briand*
    Danick Briand
    Soft Transducers Laboratory, Ecole Polytechnique Fédérale de Lausanne, 2000 Neuchâtel, Switzerland
    *Email: [email protected]
Cite this: ACS Appl. Electron. Mater. 2020, 2, 10, 3141–3151
Publication Date (Web):September 5, 2020
https://doi.org/10.1021/acsaelm.0c00444
Copyright © 2020 American Chemical Society

    Article Views

    1000

    Altmetric

    -

    Citations

    LEARN ABOUT THESE METRICS
    Other access options
    Supporting Info (1)»

    Abstract

    Abstract Image

    Solution processing is an attractive alternative to standard vacuum fabrication techniques for the large-area manufacturing of metal oxide (MOx)-based electron devices. Here, we report on thin-film transistors (TFTs) based on a solution-processed indium zinc oxide (IZO) semiconductor utilizing a deep-ultraviolet (DUV)-enhanced curing, which enables a reduction of the annealing temperature to 200 °C. The effects of the DUV light exposure and the subsequent post-annealing parameters on the chemical composition of the IZO films have been investigated using Fourier-transform infrared spectroscopy and X-ray photoelectron spectroscopy. The semiconductor layer has been combined with an high-k aluminum oxide/yttrium aluminum oxide (AlOx/YAlOx) dielectric stack to realize fully solution-processed MOx TFTs at low temperature. The IZO/AlOx/YAlOx TFTs treated for 20 min DUV followed by 60 min at 200 °C exhibited Ion/Ioff of >108, a subthreshold slope (SS) of <100 mV dec–1, and mobility (μsat) of 15.6 ± 4 cm2 V–1 s–1. Devices realized with a reduced semiconductor curing time of 5 min DUV and 5 min at 200 °C achieved Ion/Ioff of >108, a SS <100 mV dec–1, and μsat of 2.83 ± 1.4 cm2 V–1 s–1. The TFTs possess high operational stability under gate bias stress, exhibiting low shifts in the threshold voltage of <1 V after 1000 s. The DUV-enhanced approach reduces the thermal budget required for the curing of solution-processed IZO semiconductors films, paving the way for its further implementation on temperature-sensitive substrates in future.

    Read this article

    To access this article, please review the available access options below.

    Get instant access

    Purchase Access

    Read this article for 48 hours. Check out below using your ACS ID or as a guest.

    Recommended

    Access through Your Institution

    You may have access to this article through your institution.

    Your institution does not have access to this content. You can change your affiliated institution below.

    Supporting Information

    ARTICLE SECTIONS
    Jump To

    The Supporting Information is available free of charge at https://pubs.acs.org/doi/10.1021/acsaelm.0c00444.

    • TGA of the IZO solution, dielectric characterization data, typical TFT electrical characteristics, hysteresis curves of TFTs cured with different protocols, transfer curves obtained from devices cured with different conditions, aging effects on the transfer characteristics for different annealing protocols, in-depth XPS analysis of IZO films; XPS data fitting, GA XRD of the IZO film, and electrical parameters of the fabricated devices (PDF)

    Terms & Conditions

    Most electronic Supporting Information files are available without a subscription to ACS Web Editions. Such files may be downloaded by article for research use (if there is a public use license linked to the relevant article, that license may permit other uses). Permission may be obtained from ACS for other uses through requests via the RightsLink permission system: http://pubs.acs.org/page/copyright/permissions.html.

    Cited By

    This article is cited by 13 publications.

    1. Gergely Tarsoly, Jae-Yun Lee, Kwan-Jun Heo, Sung-Jin Kim. Doping of Indium Oxide Semiconductor Film Prepared Using an Environmentally Friendly Aqueous Solution Process with Sub-1% Molybdenum to Improve Device Performance and Stability. ACS Applied Electronic Materials 2023, 5 (8) , 4308-4315. https://doi.org/10.1021/acsaelm.3c00579
    2. Wei Huang, Xinge Yu, Li Zeng, Binghao Wang, Atsuro Takai, Gabriele Di Carlo, Michael J. Bedzyk, Tobin J. Marks, Antonio Facchetti. Ultraviolet Light-Densified Oxide-Organic Self-Assembled Dielectrics: Processing Thin-Film Transistors at Room Temperature. ACS Applied Materials & Interfaces 2021, 13 (2) , 3445-3453. https://doi.org/10.1021/acsami.0c20345
    3. Jiyuan Zhu, Shen Hu, Bojia Chen, Yu Zhang, Shice Wei, Xiangyu Guo, Xingli Zou, Xionggang Lu, Qingqing Sun, David W. Zhang, Li Ji. Tunable-performance all-oxide structure field-effect transistor based atomic layer deposited Hf-doped In2O3 thin films. The Journal of Chemical Physics 2023, 159 (17) https://doi.org/10.1063/5.0170886
    4. Umu Hanifah, Juan Paolo S Bermundo, Mutsunori Uenuma, Yukiharu Uraoka. Performance and reliability improvement of all-solution processed indium zinc oxide thin-film transistor by UV irradiation treatment. Journal of Physics D: Applied Physics 2023, 56 (40) , 405114. https://doi.org/10.1088/1361-6463/acdefb
    5. Xue Chen, Ruokai Wu, Jiaxian Wan, Hongwei Wu, Hao Wu, Chang Liu. Rational selection of the oxygen source for atomic layer deposition Al2O3 insulators. Vacuum 2023, 215 , 112315. https://doi.org/10.1016/j.vacuum.2023.112315
    6. Jinyang Huang, Zhiying Chen, Yunhao Wan, Xindi Xu, Yuwei Zhao, Zhendong Jiang, Ching-Ho Tien, Lung-Chien Chen, Meng Zhang. P‐7: Enhanced Visible Light Response of Amorphous InZnO Thin‐Film Transistors by Hydrogen Doping via Al 2 O 3 /SiO 2 Gate Dielectric. SID Symposium Digest of Technical Papers 2023, 54 (1) , 1802-1805. https://doi.org/10.1002/sdtp.16955
    7. Ching‐Fu Lin, Chun‐Hao Chang, Laurent Noël, Bor‐Ran Li, Hsin‐Fei Meng, Olivier Soppera, Hsiao‐Wen Zan. NIR Laser Integration of Photodetector on 3D Printed Chamber for Colorimetric Biosensing. Advanced Materials Technologies 2023, 8 (4) https://doi.org/10.1002/admt.202201026
    8. Han-Lin Zhao, Gergely Tarsoly, Fei Shan, Xiao-Lin Wang, Jae-Yun Lee, Yong Jin Jeong, Sung-Jin Kim. Impact of pre-annealing process on electrical properties and stability of indium zinc oxide thin-film transistors. Scientific Reports 2022, 12 (1) https://doi.org/10.1038/s41598-022-24093-w
    9. Yunchae Jeon, Donghyun Lee, Hocheon Yoo. Recent Advances in Metal-Oxide Thin-Film Transistors: Flexible/Stretchable Devices, Integrated Circuits, Biosensors, and Neuromorphic Applications. Coatings 2022, 12 (2) , 204. https://doi.org/10.3390/coatings12020204
    10. Sami Bolat, Evangelos Agiannis, Shih-Chi Yang, Moritz H. Futscher, Abdesselam Aribia, Ivan Shorubalko, Yaroslav E. Romanyuk. Engineering Bilayer AlOx /YAlOx Dielectric Stacks for Hysteresis-Free Switching in Solution-Processed Metal-Oxide Thin-Film Transistors. Frontiers in Electronics 2022, 2 https://doi.org/10.3389/felec.2021.804474
    11. Won-June Lee, Taehyun Kwak, Jun-Gyu Choi, Sungjun Park, Myung-Han Yoon. Solution-processed metal oxide dielectric films: Progress and outlook. APL Materials 2021, 9 (12) https://doi.org/10.1063/5.0066014
    12. Rudolf C. Hoffmann, Maciej O. Liedke, Maik Butterling, Andreas Wagner, Vanessa Trouillet, Jörg J. Schneider. Solution synthesis and dielectric properties of alumina thin films: understanding the role of the organic additive in film formation. Dalton Transactions 2021, 50 (25) , 8811-8819. https://doi.org/10.1039/D1DT01439K
    13. Masashi Miyakawa, Mitsuru Nakata, Hiroshi Tsuji, Tatsuya Takei, Shuhei Tanaka, Yoshiki Nakajima. P‐110: Spontaneous Direct Printing Method for Solution‐Processed Metal Oxide Thin‐Film Transistors. SID Symposium Digest of Technical Papers 2021, 52 (1) , 1139-1142. https://doi.org/10.1002/sdtp.14895

    Pair your accounts.

    Export articles to Mendeley

    Get article recommendations from ACS based on references in your Mendeley library.

    Pair your accounts.

    Export articles to Mendeley

    Get article recommendations from ACS based on references in your Mendeley library.

    You’ve supercharged your research process with ACS and Mendeley!

    STEP 1:
    Click to create an ACS ID

    Please note: If you switch to a different device, you may be asked to login again with only your ACS ID.

    Please note: If you switch to a different device, you may be asked to login again with only your ACS ID.

    Please note: If you switch to a different device, you may be asked to login again with only your ACS ID.

    MENDELEY PAIRING EXPIRED
    Your Mendeley pairing has expired. Please reconnect