HfO2–Al2O3 Dielectric Layer for a Performing Metal–Ferroelectric–Insulator–Semiconductor Structure with a Ferroelectric 0.5Ba(Zr0.2Ti0.8)O3-0.5(Ba0.7Ca0.3)TiO3 Thin Film
- José P. B. Silva*José P. B. Silva*Email: [email protected]Centre of Physics of University of Minho and Porto (CF-UM-UP), Campus de Gualtar, 4710-057 Braga, PortugalMore by José P. B. Silva
- ,
- Koppole C. Sekhar*Koppole C. Sekhar*Email: [email protected]Department of Physics, School of Basic and Applied Science, Central University of Tamil Nadu, 610 101 Thiruvarur, IndiaMore by Koppole C. Sekhar
- ,
- Katerina VeltruskáKaterina VeltruskáDepartment of Surface and Plasma Science, Faculty of Mathematics and Physics, Charles University, V Holešovičkách 2, 18000 Prague 8, Czech RepublicMore by Katerina Veltruská
- ,
- Vladimir MatolínVladimir MatolínDepartment of Surface and Plasma Science, Faculty of Mathematics and Physics, Charles University, V Holešovičkách 2, 18000 Prague 8, Czech RepublicMore by Vladimir Matolín
- ,
- Raluca F. NegreaRaluca F. NegreaNational Institute of Materials Physics, 105 Bis Atomistilor, 077125 Magurele, RomaniaMore by Raluca F. Negrea
- ,
- Corneliu GhicaCorneliu GhicaNational Institute of Materials Physics, 105 Bis Atomistilor, 077125 Magurele, RomaniaMore by Corneliu Ghica
- ,
- Marcelo J. S. OliveiraMarcelo J. S. OliveiraCentre of Physics of University of Minho and Porto (CF-UM-UP), Campus de Gualtar, 4710-057 Braga, PortugalMore by Marcelo J. S. Oliveira
- ,
- Joaquim Agostinho MoreiraJoaquim Agostinho MoreiraIFIMUP & Department of Physics and Astronomy, Sciences Faculty, University of Porto, Rua do Campo Alegre, 687, 4169-007 Porto, PortugalMore by Joaquim Agostinho Moreira
- ,
- Mário PereiraMário PereiraCentre of Physics of University of Minho and Porto (CF-UM-UP), Campus de Gualtar, 4710-057 Braga, PortugalMore by Mário Pereira
- , and
- Maria J. M. GomesMaria J. M. GomesCentre of Physics of University of Minho and Porto (CF-UM-UP), Campus de Gualtar, 4710-057 Braga, PortugalMore by Maria J. M. Gomes
Abstract
In this work, the ferroelectric and fatigue characteristics of Au/0.5Ba(Zr0.2Ti0.8)O3-0.5(Ba0.7Ca0.3)TiO3(BCZT)/Si metal–ferroelectric–semiconductor (MFS) structures are investigated. Moreover, the effect of introducing a thin dielectric HfO2–Al2O3 (HAO) layer with different thicknesses between the BCZT layer and the Si substrate on the ferroelectric characteristics in the metal–ferroelectric–insulator–semiconductor (MFIS) configuration is evaluated. It is evidenced that the insertion of the HAO layer with a thickness of 8 nm improves the memory window of the capacitance–voltage (C–V) curves by 106% compared to the value obtained in the MFS structure and reduces the leakage currents. Furthermore, the Au/BCZT/HAO (8 nm)/Si structure shows a remarkable remnant polarization (Pr) of 7.8 μC/cm2, with a coercive voltage of 1.9 V. The obtained value for Pr corresponds to a six times enhancement when compared to the value obtained in the Au/BCZT/Si structure. In addition, the fatigue studies reveal that the Pr obtained in the Au/BCZT/HAO/Si structure slightly decreases (3%) with continuous cycling, up to 109 cycles. The present work evidences that Au/BCZT/HAO/Si structures are promising for nonvolatile memory applications.
Cited By
This article is cited by 5 publications.
- Zhenhai Li, Jialin Meng, Yongkai Liu, Jiajie Yu, Tianyu Wang, Kangli Xu, Hao Zhu, Qingqing Sun, David Wei Zhang, Lin Chen. Physical Mechanisms Behind the Annealing Temperature Effect on Ferroelectric Phase in HfAlO FTJs by First-Principles Calculations. IEEE Transactions on Electron Devices 2023, 70 (10) , 5107-5112. https://doi.org/10.1109/TED.2023.3306730
- Zhenhai Li, Tianyu Wang, Jialin Meng, Hao Zhu, Qingqing Sun, David Wei Zhang, Lin Chen. Flexible aluminum-doped hafnium oxide ferroelectric synapse devices for neuromorphic computing. Materials Horizons 2023, 10 (9) , 3643-3650. https://doi.org/10.1039/D3MH00645J
- Muhassinah Tasneem, J. Gokulakrishnan, K.C. Sekhar, S. Sathish, Koppole Kamakshi. Effect of SrTiO3 buffer layer on electrical, ferroelectric memory, and polarization reversal studies of spin-coated ferroelectric 0.6Ba (Zr0·2Ti0.8)O3-0.4(Ba0·7Ca0.3)TiO3 thin film in MFIS structure. Current Applied Physics 2023, 51 , 91-97. https://doi.org/10.1016/j.cap.2023.05.005
- José P. B. Silva, Katarzyna Gwozdz, Luís S. Marques, Mario Pereira, Maria J. M. Gomes, Judith L. MacManus‐Driscoll, Robert L. Z. Hoye. Large ferro–pyro–phototronic effect in 0.5Ba(Zr 0.2 Ti 0.8 )O 3 –0.5(Ba 0.7 Ca 0.3 )TiO 3 thin films integrated on silicon for photodetection. Carbon Energy 2023, 5 (6) https://doi.org/10.1002/cey2.297
- Constantin Vahlas, Brigitte Caussat. Metalorganic chemical vapor deposition of aluminum oxides: A paradigm on the process-structure-properties relationship. 2022, 133-168. https://doi.org/10.1016/B978-0-12-814629-3.00005-2