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HfO2–Al2O3 Dielectric Layer for a Performing Metal–Ferroelectric–Insulator–Semiconductor Structure with a Ferroelectric 0.5Ba(Zr0.2Ti0.8)O3-0.5(Ba0.7Ca0.3)TiO3 Thin Film
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    HfO2–Al2O3 Dielectric Layer for a Performing Metal–Ferroelectric–Insulator–Semiconductor Structure with a Ferroelectric 0.5Ba(Zr0.2Ti0.8)O3-0.5(Ba0.7Ca0.3)TiO3 Thin Film
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    • José P. B. Silva*
      José P. B. Silva
      Centre of Physics of University of Minho and Porto (CF-UM-UP), Campus de Gualtar, 4710-057 Braga, Portugal
      *Email: [email protected]
    • Koppole C. Sekhar*
      Koppole C. Sekhar
      Department of Physics, School of Basic and Applied Science, Central University of Tamil Nadu, 610 101 Thiruvarur, India
      *Email: [email protected]
    • Katerina Veltruská
      Katerina Veltruská
      Department of Surface and Plasma Science, Faculty of Mathematics and Physics, Charles University, V Holešovičkách 2, 18000 Prague 8, Czech Republic
    • Vladimir Matolín
      Vladimir Matolín
      Department of Surface and Plasma Science, Faculty of Mathematics and Physics, Charles University, V Holešovičkách 2, 18000 Prague 8, Czech Republic
    • Raluca F. Negrea
      Raluca F. Negrea
      National Institute of Materials Physics, 105 Bis Atomistilor, 077125 Magurele, Romania
    • Corneliu Ghica
      Corneliu Ghica
      National Institute of Materials Physics, 105 Bis Atomistilor, 077125 Magurele, Romania
    • Marcelo J. S. Oliveira
      Marcelo J. S. Oliveira
      Centre of Physics of University of Minho and Porto (CF-UM-UP), Campus de Gualtar, 4710-057 Braga, Portugal
    • Joaquim Agostinho Moreira
      Joaquim Agostinho Moreira
      IFIMUP & Department of Physics and Astronomy, Sciences Faculty, University of Porto, Rua do Campo Alegre, 687, 4169-007 Porto, Portugal
    • Mário Pereira
      Mário Pereira
      Centre of Physics of University of Minho and Porto (CF-UM-UP), Campus de Gualtar, 4710-057 Braga, Portugal
    • Maria J. M. Gomes
      Maria J. M. Gomes
      Centre of Physics of University of Minho and Porto (CF-UM-UP), Campus de Gualtar, 4710-057 Braga, Portugal
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    ACS Applied Electronic Materials

    Cite this: ACS Appl. Electron. Mater. 2020, 2, 9, 2780–2787
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    https://doi.org/10.1021/acsaelm.0c00480
    Published August 12, 2020
    Copyright © 2020 American Chemical Society

    Abstract

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    In this work, the ferroelectric and fatigue characteristics of Au/0.5Ba(Zr0.2Ti0.8)O3-0.5(Ba0.7Ca0.3)TiO3(BCZT)/Si metal–ferroelectric–semiconductor (MFS) structures are investigated. Moreover, the effect of introducing a thin dielectric HfO2–Al2O3 (HAO) layer with different thicknesses between the BCZT layer and the Si substrate on the ferroelectric characteristics in the metal–ferroelectric–insulator–semiconductor (MFIS) configuration is evaluated. It is evidenced that the insertion of the HAO layer with a thickness of 8 nm improves the memory window of the capacitance–voltage (C–V) curves by 106% compared to the value obtained in the MFS structure and reduces the leakage currents. Furthermore, the Au/BCZT/HAO (8 nm)/Si structure shows a remarkable remnant polarization (Pr) of 7.8 μC/cm2, with a coercive voltage of 1.9 V. The obtained value for Pr corresponds to a six times enhancement when compared to the value obtained in the Au/BCZT/Si structure. In addition, the fatigue studies reveal that the Pr obtained in the Au/BCZT/HAO/Si structure slightly decreases (3%) with continuous cycling, up to 109 cycles. The present work evidences that Au/BCZT/HAO/Si structures are promising for nonvolatile memory applications.

    Copyright © 2020 American Chemical Society

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    This article is cited by 5 publications.

    1. Zhenhai Li, Jialin Meng, Yongkai Liu, Jiajie Yu, Tianyu Wang, Kangli Xu, Hao Zhu, Qingqing Sun, David Wei Zhang, Lin Chen. Physical Mechanisms Behind the Annealing Temperature Effect on Ferroelectric Phase in HfAlO FTJs by First-Principles Calculations. IEEE Transactions on Electron Devices 2023, 70 (10) , 5107-5112. https://doi.org/10.1109/TED.2023.3306730
    2. Zhenhai Li, Tianyu Wang, Jialin Meng, Hao Zhu, Qingqing Sun, David Wei Zhang, Lin Chen. Flexible aluminum-doped hafnium oxide ferroelectric synapse devices for neuromorphic computing. Materials Horizons 2023, 10 (9) , 3643-3650. https://doi.org/10.1039/D3MH00645J
    3. Muhassinah Tasneem, J. Gokulakrishnan, K.C. Sekhar, S. Sathish, Koppole Kamakshi. Effect of SrTiO3 buffer layer on electrical, ferroelectric memory, and polarization reversal studies of spin-coated ferroelectric 0.6Ba (Zr0·2Ti0.8)O3-0.4(Ba0·7Ca0.3)TiO3 thin film in MFIS structure. Current Applied Physics 2023, 51 , 91-97. https://doi.org/10.1016/j.cap.2023.05.005
    4. José P. B. Silva, Katarzyna Gwozdz, Luís S. Marques, Mario Pereira, Maria J. M. Gomes, Judith L. MacManus‐Driscoll, Robert L. Z. Hoye. Large ferro–pyro–phototronic effect in 0.5Ba(Zr 0.2 Ti 0.8 )O 3 –0.5(Ba 0.7 Ca 0.3 )TiO 3 thin films integrated on silicon for photodetection. Carbon Energy 2023, 5 (6) https://doi.org/10.1002/cey2.297
    5. Constantin Vahlas, Brigitte Caussat. Metalorganic chemical vapor deposition of aluminum oxides: A paradigm on the process-structure-properties relationship. 2022, 133-168. https://doi.org/10.1016/B978-0-12-814629-3.00005-2

    ACS Applied Electronic Materials

    Cite this: ACS Appl. Electron. Mater. 2020, 2, 9, 2780–2787
    Click to copy citationCitation copied!
    https://doi.org/10.1021/acsaelm.0c00480
    Published August 12, 2020
    Copyright © 2020 American Chemical Society

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