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High-Performance and Ultralow-Noise Two-Dimensional Heterostructure Field-Effect Transistors with One-Dimensional Electrical Contacts

  • Aroop K. Behera
    Aroop K. Behera
    Department of Industrial and Manufacturing Systems Engineering, Kansas State University, Manhattan, Kansas 66506, United States
  • Charles Thomas Harris
    Charles Thomas Harris
    Center for Integrated Nanotechnologies, Sandia National Laboratories, Albuquerque, New Mexico 87123, United States
    Sandia National Laboratories, Albuquerque, New Mexico 87185, United States
  • Douglas V. Pete
    Douglas V. Pete
    Center for Integrated Nanotechnologies, Sandia National Laboratories, Albuquerque, New Mexico 87123, United States
    Sandia National Laboratories, Albuquerque, New Mexico 87185, United States
  • Collin J. Delker
    Collin J. Delker
    Sandia National Laboratories, Albuquerque, New Mexico 87185, United States
  • Per Erik Vullum
    Per Erik Vullum
    Department of Materials and Nanotechnology, SINTEF, Høgskoleringen 5, Trondheim NO-7034, Norway
  • Marta B. Muniz
    Marta B. Muniz
    Department of Sustainable Energy Technology, SINTEF, Forskningsveien 1, Oslo 0373, Norway
    Institut de Physique de la Matière Complexe, Ecole Polytechnique Fèdèrale de Lausanne (EPFL), Lausanne 1015, Switzerland
  • Ozhan Koybasi
    Ozhan Koybasi
    Department of Microsystems and Nanotechnology, SINTEF DIGITAL, Oslo 0373, Norway
  • Takashi Taniguchi
    Takashi Taniguchi
    International Center for Materials Nanoarchitectonics, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan
  • Kenji Watanabe
    Kenji Watanabe
    Research Center for Functional Materials, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan
  • Branson D. Belle
    Branson D. Belle
    Department of Sustainable Energy Technology, SINTEF, Forskningsveien 1, Oslo 0373, Norway
  • , and 
  • Suprem R. Das*
    Suprem R. Das
    Department of Industrial and Manufacturing Systems Engineering, Kansas State University, Manhattan, Kansas 66506, United States
    Department of Electrical and Computer Engineering, Kansas State University, Manhattan, Kansas 66506, United States
    *Email: [email protected]
Cite this: ACS Appl. Electron. Mater. 2021, 3, 9, 4126–4134
Publication Date (Web):September 7, 2021
https://doi.org/10.1021/acsaelm.1c00595
Copyright © 2021 American Chemical Society

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    Abstract

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    Two-dimensional heterostructure field-effect transistors (2D-HFETs) with one-dimensional electrical contacts to atomically thin channels have recently shown great device performance, such as reduced contact resistance, leading to ballistic transport and enhanced carrier mobility. While a number of low-frequency noise studies exists on bare graphene devices supported on silicon dioxide gate insulators with surface contacts, such studies in heterostructure devices comprising epitaxial graphene on hexagonal boron nitride (hBN) with edge contacts are extremely limited. In this article, we present a systematic, temperature-dependent study of electrical transport and low-frequency noise in edge-contacted high-mobility HFET with a single atomic-layer graphene channel encapsulated by hBN and demonstrate ultralow noise with a Hooge parameter of ≈10–5. By combining measurements and modeling based on underlying microscopic scattering mechanisms caused by charge carriers and phonons, we directly correlate the high-performance, temperature-dependent transport behavior of this device with the noise characteristics. Our study provides a pathway towards engineering low-noise graphene-based high-performance 2D-FETs with one-dimensional edge contacts for applications such as digital electronics and chemical/biological sensing.

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    The Supporting Information is available free of charge at https://pubs.acs.org/doi/10.1021/acsaelm.1c00595.

    • Device fabrication; drain-source current versus VgVCNP; residual resistance extraction; deformation potential extraction; LA and RIP resistivity extraction; noise spectral density normalized by device area; derivations for the rate of change of noise amplitude A with temperature; and power law dependence of the Hooge parameter on mobility (log–log plot) (PDF)

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    Cited By

    This article is cited by 2 publications.

    1. Aroop K. Behera, C. Thomas Harris, Douglas V. Pete, Christopher M. Smyth, Marta B. Muniz, Ozhan Koybasi, Takashi Taniguchi, Kenji Watanabe, Branson D. Belle, Suprem R. Das. Charge-Inhomogeneity-Mediated Low-Frequency Noise in One-Dimensional Edge-Contacted Graphene Heterostructure Field Effect Transistors. ACS Applied Nano Materials 2024, Article ASAP.
    2. Shubhadip Moulick, Rafiqul Alam, Atindra Nath Pal. Sensing Remote Bulk Defects through Resistance Noise in a Large-Area Graphene Field-Effect Transistor. ACS Applied Materials & Interfaces 2022, 14 (45) , 51105-51112. https://doi.org/10.1021/acsami.2c14499

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