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Acoustically Operated Excitonic Transistor Using Poly(3-hexylthiophene)
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    Acoustically Operated Excitonic Transistor Using Poly(3-hexylthiophene)
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    • Paromita Bhattacharjee
      Paromita Bhattacharjee
      Centre for Nanotechnology, Indian Institute of Technology Guwahati, Guwahati 781039, Assam, India
    • Himakshi Mishra
      Himakshi Mishra
      Department of Electronics and Electrical Engineering, Indian Institute of Technology Guwahati, Guwahati 781039, Assam, India
    • Parameswar Krishnan Iyer*
      Parameswar Krishnan Iyer
      Centre for Nanotechnology, Indian Institute of Technology Guwahati, Guwahati 781039, Assam, India
      Department of Chemistry, Indian Institute of Technology Guwahati, Guwahati 781039, Assam, India
      *Email: [email protected]. Phone: +91-361-258-2314. Fax: +91-361-269-0762/258-2349.
    • Harshal Bhalchandra Nemade
      Harshal Bhalchandra Nemade
      Centre for Nanotechnology, Indian Institute of Technology Guwahati, Guwahati 781039, Assam, India
      Department of Electronics and Electrical Engineering, Indian Institute of Technology Guwahati, Guwahati 781039, Assam, India
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    ACS Applied Electronic Materials

    Cite this: ACS Appl. Electron. Mater. 2023, 5, 7, 3650–3656
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    https://doi.org/10.1021/acsaelm.3c00400
    Published June 23, 2023
    Copyright © 2023 American Chemical Society

    Abstract

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    An organic semiconductor, regioregular poly(3-hexylthiophene) (rrP3HT), based excitonic transistor on a piezoelectric YZ lithium niobate substrate is reported for the first time. The propagating surface acoustic wave (SAW) field ionizes the excitons, stores the charge pair in the SAW modulated potential field in the semiconductor, and carries them forward. A long-range transport ∼4.7 mm at room temperature has been demonstrated. The electrical control of the exciton flux was achieved with SAW propagating through a dual metal–insulator–semiconductor (MIS) structure. The working of the device has been demonstrated using white and green light. A threshold voltage of −20.65 V was observed, and the working mechanism of the proposed device has been verified through numerical analysis using MATLAB. The potential use of the proposed device structure as an all optical device was verified electrically with additional electrode terminals at the output end.

    Copyright © 2023 American Chemical Society

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    This article is cited by 1 publications.

    1. Paromita Bhattacharjee, Himakshi Mishra, Parameswar Krishnan Iyer, Harshal Bhalchandra Nemade. Acoustic interactions with semiconductors: progression from inorganic to organic material system. Journal of Physics D: Applied Physics 2024, 57 (42) , 423001. https://doi.org/10.1088/1361-6463/ad5849

    ACS Applied Electronic Materials

    Cite this: ACS Appl. Electron. Mater. 2023, 5, 7, 3650–3656
    Click to copy citationCitation copied!
    https://doi.org/10.1021/acsaelm.3c00400
    Published June 23, 2023
    Copyright © 2023 American Chemical Society

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