Acoustically Operated Excitonic Transistor Using Poly(3-hexylthiophene)Click to copy article linkArticle link copied!
- Paromita BhattacharjeeParomita BhattacharjeeCentre for Nanotechnology, Indian Institute of Technology Guwahati, Guwahati 781039, Assam, IndiaMore by Paromita Bhattacharjee
- Himakshi MishraHimakshi MishraDepartment of Electronics and Electrical Engineering, Indian Institute of Technology Guwahati, Guwahati 781039, Assam, IndiaMore by Himakshi Mishra
- Parameswar Krishnan Iyer*Parameswar Krishnan Iyer*Email: [email protected]. Phone: +91-361-258-2314. Fax: +91-361-269-0762/258-2349.Centre for Nanotechnology, Indian Institute of Technology Guwahati, Guwahati 781039, Assam, IndiaDepartment of Chemistry, Indian Institute of Technology Guwahati, Guwahati 781039, Assam, IndiaMore by Parameswar Krishnan Iyer
- Harshal Bhalchandra NemadeHarshal Bhalchandra NemadeCentre for Nanotechnology, Indian Institute of Technology Guwahati, Guwahati 781039, Assam, IndiaDepartment of Electronics and Electrical Engineering, Indian Institute of Technology Guwahati, Guwahati 781039, Assam, IndiaMore by Harshal Bhalchandra Nemade
Abstract

An organic semiconductor, regioregular poly(3-hexylthiophene) (rrP3HT), based excitonic transistor on a piezoelectric YZ lithium niobate substrate is reported for the first time. The propagating surface acoustic wave (SAW) field ionizes the excitons, stores the charge pair in the SAW modulated potential field in the semiconductor, and carries them forward. A long-range transport ∼4.7 mm at room temperature has been demonstrated. The electrical control of the exciton flux was achieved with SAW propagating through a dual metal–insulator–semiconductor (MIS) structure. The working of the device has been demonstrated using white and green light. A threshold voltage of −20.65 V was observed, and the working mechanism of the proposed device has been verified through numerical analysis using MATLAB. The potential use of the proposed device structure as an all optical device was verified electrically with additional electrode terminals at the output end.
Cited By
Smart citations by scite.ai include citation statements extracted from the full text of the citing article. The number of the statements may be higher than the number of citations provided by ACS Publications if one paper cites another multiple times or lower if scite has not yet processed some of the citing articles.
This article is cited by 1 publications.
- Paromita Bhattacharjee, Himakshi Mishra, Parameswar Krishnan Iyer, Harshal Bhalchandra Nemade. Acoustic interactions with semiconductors: progression from inorganic to organic material system. Journal of Physics D: Applied Physics 2024, 57
(42)
, 423001. https://doi.org/10.1088/1361-6463/ad5849
Article Views are the COUNTER-compliant sum of full text article downloads since November 2008 (both PDF and HTML) across all institutions and individuals. These metrics are regularly updated to reflect usage leading up to the last few days.
Citations are the number of other articles citing this article, calculated by Crossref and updated daily. Find more information about Crossref citation counts.
The Altmetric Attention Score is a quantitative measure of the attention that a research article has received online. Clicking on the donut icon will load a page at altmetric.com with additional details about the score and the social media presence for the given article. Find more information on the Altmetric Attention Score and how the score is calculated.