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Investigating the Role of Interfacial Layer for Resistive Switching in a Hybrid Dion-Jacobson Perovskite-Based Memristor

  • Manish Khemnani
    Manish Khemnani
    Department of Physics, School of Energy Technology, Pandit Deendayal Energy University, Raysan, Gandhinagar 382426, India
    Flextronics Laboratory, Pandit Deendayal Energy University, Raysan, Gandhinagar 382426, India
  • Brijesh Tripathi*
    Brijesh Tripathi
    Department of Physics, School of Energy Technology, Pandit Deendayal Energy University, Raysan, Gandhinagar 382426, India
    *Email: [email protected]
  • Parth Thakkar
    Parth Thakkar
    Department of Physics, School of Energy Technology, Pandit Deendayal Energy University, Raysan, Gandhinagar 382426, India
    Flextronics Laboratory, Pandit Deendayal Energy University, Raysan, Gandhinagar 382426, India
  • Jeny Gosai
    Jeny Gosai
    Flextronics Laboratory, Pandit Deendayal Energy University, Raysan, Gandhinagar 382426, India
    Department of Chemistry, School of Energy Technology, Pandit Deendayal Energy University, Raysan, Gandhinagar 382426, India
    More by Jeny Gosai
  • Muskan Jain
    Muskan Jain
    Department of Physics, School of Energy Technology, Pandit Deendayal Energy University, Raysan, Gandhinagar 382426, India
    Flextronics Laboratory, Pandit Deendayal Energy University, Raysan, Gandhinagar 382426, India
    More by Muskan Jain
  • Prakash Chandra
    Prakash Chandra
    Department of Chemistry, School of Energy Technology, Pandit Deendayal Energy University, Raysan, Gandhinagar 382426, India
  • , and 
  • Ankur Solanki*
    Ankur Solanki
    Department of Physics, School of Energy Technology, Pandit Deendayal Energy University, Raysan, Gandhinagar 382426, India
    Flextronics Laboratory, Pandit Deendayal Energy University, Raysan, Gandhinagar 382426, India
    *Email: [email protected]
Cite this: ACS Appl. Electron. Mater. 2023, XXXX, XXX, XXX-XXX
Publication Date (Web):September 13, 2023
https://doi.org/10.1021/acsaelm.3c01038
© 2023 American Chemical Society

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    Abstract

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    In-memory computing enables fast computing and low power consumption by overcoming major drawbacks of traditional computers built with a von Neumann architecture. In a memristor, multilevel storage and history-dependent conductivity modulation characteristics allow us to store the information and simulate the synaptic behaviors to mimic the biological brain. In this work, the role of the interfacial layers has been investigated in the suppression of the charge transfer barrier in Dion-Jacobson hybrid perovskite-based memristor devices. The insertion of the interfacial layers between active layer and electrodes (ITO/PEDOT:PSS/Active layer/PMMA/Ag) improves the ON/OFF ratio (103), data endurance (102), and retention (>6000 s) for the nonvolatile storage applications in 3-(aminomethyl) piperidinium (3AMP) organic spacer cation-based devices. The presence of the interfacial layer reduces the SET voltage to 0.33 V and energy consumption to an estimated value of ∼26 nJ. A mathematical model is presented and fitted with the experimental data to understand the formation/rupture of the conducting filament for the resistive switching mechanism. Neuromorphic properties like learning and forgetting nature of device (potentiation and depression), inhibitory postsynaptic current, spike number dependent plasticity, paired pulse facilitation index are also systematically investigated and presented. Thus, the potential to mimic human brain processes by these memristors has profound implications for artificial intelligence, robotics, and brain-machine interfaces, shaping the future of cognitive computing and AI-driven technologies.

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    The Supporting Information is available free of charge at https://pubs.acs.org/doi/10.1021/acsaelm.3c01038.

    • Energy level diagrams of different device configurations, I–V characteristics for two different batches, cycle to cycle variation of ITO/PEDOT:PSS/active layer/PMAA/Ag, various switching mechanisms, and comparison between our and previous works (PDF)

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