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Direct Integration of Monolayer WS2 with Lithographically Patterned Carbon Contacts for Memristor Application

  • Deepa Thakur
    Deepa Thakur
    School of Mechanical and Materials Engineering, Indian Institute of Technology Mandi, Kamand, H.P. India, 175075
    More by Deepa Thakur
  • Gayatri Singh
    Gayatri Singh
    School of Chemical Sciences, Indian Institute of Technology Mandi, Kamand, H.P. India, 175075
  • B Raju Naik
    B Raju Naik
    School of Mechanical and Materials Engineering, Indian Institute of Technology Mandi, Kamand, H.P. India, 175075
    More by B Raju Naik
  • Mamta Devi
    Mamta Devi
    School of Mechanical and Materials Engineering, Indian Institute of Technology Mandi, Kamand, H.P. India, 175075
    More by Mamta Devi
  • Swati Sharma*
    Swati Sharma
    School of Mechanical and Materials Engineering, Indian Institute of Technology Mandi, Kamand, H.P. India, 175075
    *Email: [email protected]
    More by Swati Sharma
  • , and 
  • Viswanath Balakrishnan*
    Viswanath Balakrishnan
    School of Mechanical and Materials Engineering, Indian Institute of Technology Mandi, Kamand, H.P. India, 175075
    *Email: [email protected]
Cite this: ACS Appl. Electron. Mater. 2024, XXXX, XXX, XXX-XXX
Publication Date (Web):February 6, 2024
https://doi.org/10.1021/acsaelm.3c01741
© 2024 American Chemical Society

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    Abstract

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    Lithographically patterned carbon microelectrodes, owing to their light weight, excellent thermal stability, chemical inertness, and good electrical conductivity, can be a suitable alternative to metal electrodes commonly employed as contact pads for electrical devices. In the present work, we demonstrate the fabrication of a planar memristor device consisting of monolayer WS2 integrated with photolithographically patterned glass-like carbon (GC) electrodes. The integration of GC with WS2 is carried out by chemical vapor deposition (CVD) of WS2 on the GC electrodes obtained by carbonization of micropatterned phenol-formaldehyde resin (SU8) onto SiO2/Si substrates. The fabricated two-terminal memristor devices exhibit bipolar and asymmetric diode-like memristive characteristics, with a high-to-low resistance ratio of approximately 2 orders of magnitude and a high endurance of 400 cycles. The direct integration of two-dimensional (2D) transition metal dichalcogenides (TMDs) with carbon materials in device geometry provides a platform for low-power device fabrication and enables the fabrication of microelectrodes of any desired shape.

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    The Supporting Information is available free of charge at https://pubs.acs.org/doi/10.1021/acsaelm.3c01741.

    • Detailed parameters for fabrication of GC electrodes and CVD growth of the WS2 monolayer, instability of gold electrodes at high temperature, XPS survey of the fabricated device, and KPFM measurements of WS2 (PDF)

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