Direct Integration of Monolayer WS₂ with Lithographically Patterned Carbon Contacts for Memristor Application

Click to copy article linkArticle link copied!

Lithographically patterned carbon microelectrodes, owing to their light weight, excellent thermal stability, chemical inertness, and good electrical conductivity, can be a suitable alternative to metal electrodes commonly employed as contact pads for electrical devices. In the present work, we demonstrate the fabrication of a planar memristor device consisting of monolayer WS₂ integrated with photolithographically patterned glass-like carbon (GC) electrodes. The integration of GC with WS₂ is carried out by chemical vapor deposition (CVD) of WS₂ on the GC electrodes obtained by carbonization of micropatterned phenol-formaldehyde resin (SU8) onto SiO₂/Si substrates. The fabricated two-terminal memristor devices exhibit bipolar and asymmetric diode-like memristive characteristics, with a high-to-low resistance ratio of approximately 2 orders of magnitude and a high endurance of 400 cycles. The direct integration of two-dimensional (2D) transition metal dichalcogenides (TMDs) with carbon materials in device geometry provides a platform for low-power device fabrication and enables the fabrication of microelectrodes of any desired shape.