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Thermal Oxidation of AlInN for III-Nitride Electronic and Optoelectronic Devices

  • Matthew R. Peart*
    Matthew R. Peart
    Center for Photonics and Nanoelectronics, Department of Electrical and Computer Engineering, Lehigh University, Bethlehem, Pennsylvania 18015, United States
    *(M.R.P.) E-mail: [email protected]
  • Xiongliang Wei
    Xiongliang Wei
    Center for Photonics and Nanoelectronics, Department of Electrical and Computer Engineering, Lehigh University, Bethlehem, Pennsylvania 18015, United States
  • Damir Borovac
    Damir Borovac
    Center for Photonics and Nanoelectronics, Department of Electrical and Computer Engineering, Lehigh University, Bethlehem, Pennsylvania 18015, United States
  • Wei Sun
    Wei Sun
    Center for Photonics and Nanoelectronics, Department of Electrical and Computer Engineering, Lehigh University, Bethlehem, Pennsylvania 18015, United States
    More by Wei Sun
  • Nelson Tansu*
    Nelson Tansu
    Center for Photonics and Nanoelectronics, Department of Electrical and Computer Engineering, Lehigh University, Bethlehem, Pennsylvania 18015, United States
    *(N.T.) E-mail: [email protected]
    More by Nelson Tansu
  • , and 
  • Jonathan J. Wierer Jr.*
    Jonathan J. Wierer, Jr.
    Center for Photonics and Nanoelectronics, Department of Electrical and Computer Engineering, Lehigh University, Bethlehem, Pennsylvania 18015, United States
    *(J.J.W.) E-mail: [email protected]
Cite this: ACS Appl. Electron. Mater. 2019, 1, 8, 1367–1371
Publication Date (Web):July 12, 2019
https://doi.org/10.1021/acsaelm.9b00266
Copyright © 2019 American Chemical Society

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    Abstract

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    The oxidation of semiconductors is a fundamental building block of many modern electronic devices. The prime example is the oxidation of silicon into silicon dioxide, which is used as a gate dielectric, waveguides, masking layer, and a device isolation layer. The ability to form an analogous stable and insulating oxide in III-nitride semiconductors would enable a new generation of III-nitride-based electronic and optoelectronic devices. Here we present data on the conversion of thick (>100 nm) AlInN epitaxial layers into oxides with H2O vapor in an N2 carrier gas (wet oxidation) at elevated temperatures (900 °C). The AlxIn1–xN layers are grown on and latticed-matched (x = 0.82) to GaN layers. The oxide can be formed over its entirety or selectively by patterning the surface. The conversion to an oxide is confirmed and characterized by atomic force microscopy, scanning electron microscopy, X-ray photoelectron spectroscopy, X-ray diffraction, spectroscopic ellipsometry, and electrical measurements. The oxide is smooth and crystalline, has a low index of refraction of ∼1.8 in the visible, and exhibits very high resistivity of >1014 Ω·cm.

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    Cited By

    This article is cited by 11 publications.

    1. Haotian Xue, Elia Palmese, Ben J. Sekely, Brian D. Little, Fred A. Kish, John F. Muth, Jonathan J. Wierer. Growth and characterization of AlInN/GaN superlattices. Journal of Crystal Growth 2024, 630 , 127567. https://doi.org/10.1016/j.jcrysgro.2024.127567
    2. Elia Palmese, Haotian Xue, Spyridon Pavlidis, Jonathan J. Wierer. Enhancement-Mode AlInN/GaN High-Electron-Mobility Transistors Enabled by Thermally Oxidized Gates. IEEE Transactions on Electron Devices 2024, 71 (2) , 1003-1009. https://doi.org/10.1109/TED.2023.3343313
    3. S. Hassaballa, A. Aljabri, S. H. Mohamed, F. M. El-Hossary, Mohamed Rabia, M. A. Awad. WNxOy prepared by oxidation of tungsten nitride as alternative for the sputtered N doped WO3 photocatalyst. Journal of Materials Science: Materials in Electronics 2024, 35 (1) https://doi.org/10.1007/s10854-023-11775-y
    4. Elia Palmese, Haotian Xue, Renbo Song, Jonathan J. Wierer. Thermal oxidation of lattice mismatched Al1-xInxN films on GaN. e-Prime - Advances in Electrical Engineering, Electronics and Energy 2023, 5 , 100208. https://doi.org/10.1016/j.prime.2023.100208
    5. Wenqing Song, Tao Li, Lei Zhang, Wenhui Zhu, Liancheng Wang. Influence of growth parameters on microstructures and electrical properties of InxAl1−xN thin films using sputtering. Journal of Alloys and Compounds 2021, 885 , 160977. https://doi.org/10.1016/j.jallcom.2021.160977
    6. Stephane Calvez, Oleksandr Stepanenko, Kevin Louarn, Emmanuelle Daran, Alexandre Arnoult, Guilhem Almuneau. Selective wet oxidation of AlAsSb alloys on GaAs. AIP Advances 2021, 11 (12) https://doi.org/10.1063/5.0073200
    7. Elia Palmese, Matthew R. Peart, Damir Borovac, Renbo Song, Nelson Tansu, Jonathan J. Wierer. Thermal oxidation rates and resulting optical constants of Al0.83In0.17N films grown on GaN. Journal of Applied Physics 2021, 129 (12) https://doi.org/10.1063/5.0035711
    8. Ryosuke Iida, Yusuke Ueshima, Sho Iwayama, Tetsuya Takeuchi, Satoshi Kamiyama, Motoaki Iwaya, Isamu Akasaki, Masaru Kuramoto, Toshihiro Kamei. Aperture diameter dependences in GaN-based vertical-cavity surface-emitting lasers with nano-height cylindrical waveguide formed by BCl 3 dry etching. Applied Physics Express 2021, 14 (1) , 012003. https://doi.org/10.35848/1882-0786/abcfd7
    9. Damir Borovac, Wei Sun, Matthew R. Peart, Renbo Song, Jonathan J. Wierer, Nelson Tansu. Low background doping in AlInN grown on GaN via metalorganic vapor phase epitaxy. Journal of Crystal Growth 2020, 548 , 125847. https://doi.org/10.1016/j.jcrysgro.2020.125847
    10. Rodrigo Blasco, Sirona Valdueza-Felip, Daniel Montero, Michael Sun, Javier Olea, Fernando B. Naranjo. Low‐to‐Mid Al Content ( x  = 0–0.56) Al x In 1− x N Layers Deposited on Si(100) by Radio‐Frequency Sputtering. physica status solidi (b) 2020, 257 (4) https://doi.org/10.1002/pssb.201900575
    11. Damir Borovac, Wei Sun, Renbo Song, Jonathan J. Wierer, Nelson Tansu. On the thermal stability of nearly lattice-matched AlInN films grown on GaN via MOVPE. Journal of Crystal Growth 2020, 533 , 125469. https://doi.org/10.1016/j.jcrysgro.2019.125469

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