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Sub-5 nm Monolayer BiH Transistors
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    Sub-5 nm Monolayer BiH Transistors
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    • Meng Ye
      Meng Ye
      State Key Laboratory for Mesoscopic Physics and Department of Physics, Peking University, Beijing 100871, P. R. China
      State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, P. R. China
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    • Shiqi Liu
      Shiqi Liu
      State Key Laboratory for Mesoscopic Physics and Department of Physics, Peking University, Beijing 100871, P. R. China
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    • Han Zhang
      Han Zhang
      State Key Laboratory for Mesoscopic Physics and Department of Physics, Peking University, Beijing 100871, P. R. China
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    • Bowen Shi
      Bowen Shi
      State Key Laboratory for Mesoscopic Physics and Department of Physics, Peking University, Beijing 100871, P. R. China
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    • Jingzhen Li
      Jingzhen Li
      State Key Laboratory for Mesoscopic Physics and Department of Physics, Peking University, Beijing 100871, P. R. China
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    • Xiuying Zhang
      Xiuying Zhang
      State Key Laboratory for Mesoscopic Physics and Department of Physics, Peking University, Beijing 100871, P. R. China
    • Jiahuan Yan
      Jiahuan Yan
      State Key Laboratory for Mesoscopic Physics and Department of Physics, Peking University, Beijing 100871, P. R. China
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    • Jing Lu*
      Jing Lu
      State Key Laboratory for Mesoscopic Physics and Department of Physics  and  Collaborative Innovation Center of Quantum Matter, Peking University, Beijing 100871, P. R. China
      Beijing Key Laboratory for Magnetoelectric Materials and Devices, Beijing 100871, P. R. China
      *E-mail: [email protected]
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    ACS Applied Electronic Materials

    Cite this: ACS Appl. Electron. Mater. 2019, 1, 10, 2103–2108
    Click to copy citationCitation copied!
    https://doi.org/10.1021/acsaelm.9b00486
    Published September 4, 2019
    Copyright © 2019 American Chemical Society

    Abstract

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    Two-dimensional (2D) semiconductors are expected to be suitable channel materials for next-generation transistors because of their ultrathin thickness and smooth surface. Monolayer (ML) BiH (bismuthane) is predicted to have a bandgap of about 1.0 eV opened by spin–orbital coupling (SOC). In this article, we provide the first investigation of the performance limits of ML BiH transistors based on ab initio quantum transport simulation methods with full consideration of the SOC effect. The performance limits of the optimized 5 nm ML BiH transistor can satisfy the high-performance device requirement of the International Technology Roadmap for Semiconductors in the next decade, so ML BiH is attractive for applications in nanoelectronics.

    Copyright © 2019 American Chemical Society

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    Cited By

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    This article is cited by 7 publications.

    1. M. Jafarinaeimi, M. Berahman. Spin Transport in ScSe2 Nanoribbon Field Effect Transistor. The Journal of Physical Chemistry C 2023, 127 (28) , 13782-13788. https://doi.org/10.1021/acs.jpcc.3c01648
    2. Yiwei Zhao, Yan Li, Fei Ma. Performance Upper Limit of Sub-10 nm Monolayer MoS2 Transistors with MoS2–Mo Electrodes. The Journal of Physical Chemistry C 2022, 126 (29) , 12100-12112. https://doi.org/10.1021/acs.jpcc.2c03256
    3. Ying Li, Chunyu Qi, Xun Zhou, Linqiang Xu, Qiuhui Li, Shiming Liu, Chen Yang, Shiqi Liu, Lin Xu, Jichao Dong, Shibo Fang, Zongmong Yang, Yifan Chen, Xiaotian Sun, Jing Lu. Monolayer WSi 2 N 4 : A promising channel material for sub-5-nm-gate homogeneous CMOS devices. Physical Review Applied 2023, 20 (6) https://doi.org/10.1103/PhysRevApplied.20.064044
    4. Sanju Meena, Neetika Sharma, Jyotika Jogi. Sub‐5 nm 2D Semiconductor‐Based Monolayer Field‐Effect Transistor: Status and Prospects. physica status solidi (a) 2023, 220 (11) https://doi.org/10.1002/pssa.202200526
    5. Josef Weinbub, Robert Kosik. Computational perspective on recent advances in quantum electronics: from electron quantum optics to nanoelectronic devices and systems. Journal of Physics: Condensed Matter 2022, 34 (16) , 163001. https://doi.org/10.1088/1361-648X/ac49c6
    6. Ruge Quhe, Lin Xu, Shiqi Liu, Chen Yang, Yangyang Wang, Hong Li, Jie Yang, Qiuhui Li, Bowen Shi, Ying Li, Yuanyuan Pan, Xiaotian Sun, Jingzhen Li, Mouyi Weng, Han Zhang, Ying Guo, Linqiang Xu, Hao Tang, Jichao Dong, Jinbo Yang, Zhiyong Zhang, Ming Lei, Feng Pan, Jing Lu. Sub-10 nm two-dimensional transistors: Theory and experiment. Physics Reports 2021, 938 , 1-72. https://doi.org/10.1016/j.physrep.2021.07.006
    7. Junsheng Huang, Ping Li, Xiaoxiong Ren, Zhi-Xin Guo. Promising Properties of a Sub-5-nm Monolayer Mo Si 2 N 4 Transistor. Physical Review Applied 2021, 16 (4) https://doi.org/10.1103/PhysRevApplied.16.044022

    ACS Applied Electronic Materials

    Cite this: ACS Appl. Electron. Mater. 2019, 1, 10, 2103–2108
    Click to copy citationCitation copied!
    https://doi.org/10.1021/acsaelm.9b00486
    Published September 4, 2019
    Copyright © 2019 American Chemical Society

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