Sub-5 nm Monolayer BiH TransistorsClick to copy article linkArticle link copied!
- Meng YeMeng YeState Key Laboratory for Mesoscopic Physics and Department of Physics, Peking University, Beijing 100871, P. R. ChinaState Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, P. R. ChinaMore by Meng Ye
- Shiqi LiuShiqi LiuState Key Laboratory for Mesoscopic Physics and Department of Physics, Peking University, Beijing 100871, P. R. ChinaMore by Shiqi Liu
- Han ZhangHan ZhangState Key Laboratory for Mesoscopic Physics and Department of Physics, Peking University, Beijing 100871, P. R. ChinaMore by Han Zhang
- Bowen ShiBowen ShiState Key Laboratory for Mesoscopic Physics and Department of Physics, Peking University, Beijing 100871, P. R. ChinaMore by Bowen Shi
- Jingzhen LiJingzhen LiState Key Laboratory for Mesoscopic Physics and Department of Physics, Peking University, Beijing 100871, P. R. ChinaMore by Jingzhen Li
- Xiuying ZhangXiuying ZhangState Key Laboratory for Mesoscopic Physics and Department of Physics, Peking University, Beijing 100871, P. R. ChinaMore by Xiuying Zhang
- Jiahuan YanJiahuan YanState Key Laboratory for Mesoscopic Physics and Department of Physics, Peking University, Beijing 100871, P. R. ChinaMore by Jiahuan Yan
- Jing Lu*Jing Lu*E-mail: [email protected]State Key Laboratory for Mesoscopic Physics and Department of Physics and Collaborative Innovation Center of Quantum Matter, Peking University, Beijing 100871, P. R. ChinaBeijing Key Laboratory for Magnetoelectric Materials and Devices, Beijing 100871, P. R. ChinaMore by Jing Lu
Abstract
Two-dimensional (2D) semiconductors are expected to be suitable channel materials for next-generation transistors because of their ultrathin thickness and smooth surface. Monolayer (ML) BiH (bismuthane) is predicted to have a bandgap of about 1.0 eV opened by spin–orbital coupling (SOC). In this article, we provide the first investigation of the performance limits of ML BiH transistors based on ab initio quantum transport simulation methods with full consideration of the SOC effect. The performance limits of the optimized 5 nm ML BiH transistor can satisfy the high-performance device requirement of the International Technology Roadmap for Semiconductors in the next decade, so ML BiH is attractive for applications in nanoelectronics.
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