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Chemical-Pressure-Induced Point Defects Enable Low Thermal Conductivity for Mg2Sn and Mg2Si Single Crystals

  • Wataru Saito
    Wataru Saito
    Department of Applied Physics, Graduate School of Engineering, Tohoku University, Sendai 980-8579, Japan
    More by Wataru Saito
  • Kei Hayashi*
    Kei Hayashi
    Department of Applied Physics, Graduate School of Engineering, Tohoku University, Sendai 980-8579, Japan
    *Email: [email protected]
    More by Kei Hayashi
  • Zhicheng Huang
    Zhicheng Huang
    Department of Applied Physics, Graduate School of Engineering, Tohoku University, Sendai 980-8579, Japan
  • Kazuya Sugimoto
    Kazuya Sugimoto
    Institute of Quantum Beam Science, Graduate School of Science and Engineering, Ibaraki University, Tokai 319-1106, Japan
  • Kenji Ohoyama
    Kenji Ohoyama
    Institute of Quantum Beam Science, Graduate School of Science and Engineering, Ibaraki University, Tokai 319-1106, Japan
  • Naohisa Happo
    Naohisa Happo
    Department of Computer and Network Engineering, Graduate School of Information Sciences, Hiroshima City University, Hiroshima 731-3194, Japan
  • Masahide Harada
    Masahide Harada
    Materials and Life Science Division, J-PARC Center, Tokai 319-1195, Japan
  • Kenichi Oikawa
    Kenichi Oikawa
    Materials and Life Science Division, J-PARC Center, Tokai 319-1195, Japan
  • Yasuhiro Inamura
    Yasuhiro Inamura
    Materials and Life Science Division, J-PARC Center, Tokai 319-1195, Japan
  • Kouichi Hayashi
    Kouichi Hayashi
    Department of Physical Science and Engineering, Nagoya Institute of Technology, Nagoya 466-8555, Japan
    Frontier Research Institute for Materials Science, Nagoya Institute of Technology, Nagoya 466-8555, Japan
  • Takamichi Miyazaki
    Takamichi Miyazaki
    Department of Instrumental Analysis, Graduate School of Engineering, Tohoku University, Sendai 980-8579, Japan
  • , and 
  • Yuzuru Miyazaki
    Yuzuru Miyazaki
    Department of Applied Physics, Graduate School of Engineering, Tohoku University, Sendai 980-8579, Japan
Cite this: ACS Appl. Energy Mater. 2021, 4, 5, 5123–5131
Publication Date (Web):April 22, 2021
https://doi.org/10.1021/acsaem.1c00670
Copyright © 2021 American Chemical Society

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    Abstract

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    The development of thermoelectric (TE) materials, which can directly convert waste heat into electricity, is vital to reduce the use of fossil fuels. Mg2Sn and Mg2Si are promising TE materials because of their superior TE performance. In this study, for future improvement of the TE performance, point defect engineering was applied to the Mg2Sn and Mg2Si single crystals (SCs) via boron (B) doping. Their crystal structures were analyzed via white neutron holography and SC X-ray diffraction. Moreover, nanostructures and TE properties of the B-doped Mg2Sn and Mg2Si SCs were investigated. The B-doping increased the chemical pressure on the Mg2Sn and Mg2Si SCs, leading to inducing vacancy defects as a point defect. No apparent change was observed in electronic transport, but thermal transport was significantly prevented. This study demonstrates that the vacancy defects can be controlled by the chemical pressure and can aid in achieving high TE performance for the Mg2Sn and Mg2Si SCs.

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    • TEM observation and calculation of thermal conductivities (PDF)

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    This article is cited by 14 publications.

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