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Improved Photoelectrochemical Hydrogen Gas Generation on Sb2S3 Films Modified with an Earth-Abundant MoSx Co-Catalyst

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    Improved Photoelectrochemical Hydrogen Gas Generation on Sb2S3 Films Modified with an Earth-Abundant MoSx Co-Catalyst
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    • Moisés A. de Araújo
      Moisés A. de Araújo
      Departamento de Química, Universidade Federal de São Carlos, Rodovia Washington Luiz, km 235, São Carlos, São Paulo 13565-905, Brazil
      More by Moisés A. de Araújo
    • Magno B. Costa
      Magno B. Costa
      Departamento de Química, Universidade Federal de São Carlos, Rodovia Washington Luiz, km 235, São Carlos, São Paulo 13565-905, Brazil
      More by Magno B. Costa
    • Lucia H. Mascaro*
      Lucia H. Mascaro
      Departamento de Química, Universidade Federal de São Carlos, Rodovia Washington Luiz, km 235, São Carlos, São Paulo 13565-905, Brazil
      *Email: [email protected]
      More by Lucia H. Mascaro
      Orcidhttps://orcid.org/0000-0001-6908-1097
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    ACS Applied Energy Materials

    Cite this: ACS Appl. Energy Mater. 2022, 5, 1, 1010–1022
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    https://doi.org/10.1021/acsaem.1c03374
    Published January 13, 2022
    Copyright © 2022 American Chemical Society
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    Abstract

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    Antimony(III) sulfide (Sb2S3) has recently emerged as an outstanding potential photoelectrode due to its superlative optoelectronic properties for light-driven water splitting application. However, the occurrence of the recombination process in this material is regarded as one of the main limiting factors to date. Herein, we greatly suppressed the occurrence of recombination and improved carrier transfer via photoelectrodepositing an earth-abundant MoSx co-catalyst over Sb2S3 films. The Sb2S3/MoSx films displayed a remarkable 2-fold increase of their photoresponse for H2 generation and also resulted in shifting the onset potential approximately 100 mV to less negative values. Based on an in-depth analysis of the transients’ photocurrent density, the enhanced photoresponse was assigned to a smaller probability of the electron–hole recombination process, as noted from the substantial reduction of the accumulated negative charge density values at the surface of the Sb2S3 films. The minimization of carriers recombination was also verified from the decrease of the charge transfer resistance values by approximately 2-fold for the Sb2S2/MoSx films. Additionally, Sb2S3/MoSx featured an increase of the space charge thickness, which suggests an improvement of carrier separation or a minimized recombination process due to the enlarged gradient of the (quasi-)Fermi level in the space charge region of the Sb2S3 films.

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    Supporting Information

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    The Supporting Information is available free of charge at https://pubs.acs.org/doi/10.1021/acsaem.1c03374.

    • Cyclic voltammograms for MoSx photoelectrodeposition; linear sweep voltammograms in the dark and under illumination for UT-Sb2S3/MoSx and PT-Sb2S3/MoSx films; high-resolution XPS spectra for UT-Sb2S3/MoSx film; particle size distribution histograms for PT-Sb2S3 and PT-Sb2S3/(1, 10, or 20 min)-MoSx films; EDS spectra and EDS quantification plots for PT-Sb2S3 and PT-Sb2S3/(1, 10, or 20 min)-MoSx films; atomic percentage of Sb and S; binding energy assignment; and percentage error values for each circuit element to fit the complex-plane impedance diagrams (PDF)

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    This article is cited by 13 publications.

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    8. Magno B. Costa, Moisés A. de Araújo, Robert Paiva, Sandra A. Cruz, Lucia H. Mascaro. Plasma treatment of electrodeposited Sb2Se3 thin films for improvement of solar-driven hydrogen evolution reaction. Chemical Engineering Journal 2024, 485 , 149526. https://doi.org/10.1016/j.cej.2024.149526
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    10. Ke Fan, Lei Wang, Lianpeng Tong. Introduction to Photocatalytic/Photoelectrochemical Fuel Generation: Science and Technology Perspective. 2024, 19-45. https://doi.org/10.1002/9781119600862.ch2
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    12. Xinyang Liu, Liyuan Zhang, Wei Jin, Qiujie Li, Qian Sun, Yishan Wang, Enzhou Liu, Xiaoyun Hu, Hui Miao. Epitaxial growth strategy for construction of Tm3+ doped and [hk1] oriented Sb2S3 nanorods S-scheme heterojunction with enhanced photoelectrochemical performance. Chemical Engineering Journal 2023, 475 , 146315. https://doi.org/10.1016/j.cej.2023.146315
    13. Mao Zhang, Wonjung Park, Yeojin Kang, Dayoung Yoo, Tae-Hoon Kim, Byunkwon Lim, Yoon-Hwae Hwang, Dongyun Lee. Growth of single crystal Sb2S3 semiconductor pillars by sol-gel method. Materialia 2023, 30 , 101842. https://doi.org/10.1016/j.mtla.2023.101842
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    ACS Applied Energy Materials

    Cite this: ACS Appl. Energy Mater. 2022, 5, 1, 1010–1022
    Click to copy citationCitation copied!
    https://doi.org/10.1021/acsaem.1c03374
    Published January 13, 2022
    Copyright © 2022 American Chemical Society
    Request reuse permissions

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