Intrinsic Voltage Offsets in Memcapacitive Biomembranes Enable High-Performance Physical Reservoir ComputingClick to copy article linkArticle link copied!
- Ahmed S. MohamedAhmed S. MohamedDepartment of Mechanical Engineering, The Pennsylvania State University, 336 Reber Building, University Park, Pennsylvania 16802, United StatesMore by Ahmed S. Mohamed
- Anurag DhungelAnurag DhungelDepartment of Electrical and Computer Engineering, The University of Mississippi, 310 Anderson Hall, University, Mississippi 38677, United StatesMore by Anurag Dhungel
- Md Sakib Hasan*Md Sakib Hasan*[email protected]Department of Electrical and Computer Engineering, The University of Mississippi, 310 Anderson Hall, University, Mississippi 38677, United StatesMore by Md Sakib Hasan
- Joseph S. Najem*Joseph S. Najem*[email protected]Department of Mechanical Engineering, The Pennsylvania State University, 336 Reber Building, University Park, Pennsylvania 16802, United StatesMore by Joseph S. Najem
Abstract
Reservoir computing is a brain-inspired machine learning framework for processing temporal data by mapping inputs into high-dimensional spaces. Physical reservoir computers (PRCs) leverage native fading memory and nonlinearity in physical substrates, including atomic switches, photonics, volatile memristors, and, recently, memcapacitors, to achieve efficient high-dimensional mapping. Traditional PRCs often consist of homogeneous device arrays, which rely on input encoding methods and large stochastic device-to-device variations for increased nonlinearity and high-dimensional mapping. These approaches incur high preprocessing costs and restrict real-time deployment. Here, we introduce a heterogeneous memcapacitor-based PRC that exploits internal voltage offsets to enable both monotonic and nonmonotonic input-state correlations crucial for efficient high-dimensional transformations. We demonstrate our approach’s efficacy by predicting a second-order nonlinear dynamical system with a low prediction error (1.80 × 10–4). Additionally, we predict a chaotic Hénon map, achieving a low normalized root-mean-square error (0.080). Unlike previous PRCs, such errors are achieved without input encoding methods, underscoring the power of distinct input-state correlations. Most importantly, we generalize our approach to other neuromorphic devices that lack inherent voltage offsets using externally applied offsets to realize various input-state correlations. Our approach and the unprecedented performance are major milestones toward high-performance full in-materia PRCs.
Cited By
This article is cited by 2 publications.
- Nicholas Armendarez, Md Sakib Hasan, Joseph Najem. Nonlinear memristor model with exact solution allows for
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inference. Nanoscale 2025, 74 https://doi.org/10.1039/D4NR03439B
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https://doi.org/10.1063/5.0232001
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