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Intrinsic Voltage Offsets in Memcapacitive Biomembranes Enable High-Performance Physical Reservoir Computing
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    Intrinsic Voltage Offsets in Memcapacitive Biomembranes Enable High-Performance Physical Reservoir Computing
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    • Ahmed S. Mohamed
      Ahmed S. Mohamed
      Department of Mechanical Engineering, The Pennsylvania State University, 336 Reber Building, University Park, Pennsylvania 16802, United States
    • Anurag Dhungel
      Anurag Dhungel
      Department of Electrical and Computer Engineering, The University of Mississippi, 310 Anderson Hall, University, Mississippi 38677, United States
    • Md Sakib Hasan*
      Md Sakib Hasan
      Department of Electrical and Computer Engineering, The University of Mississippi, 310 Anderson Hall, University, Mississippi 38677, United States
      *[email protected]
    • Joseph S. Najem*
      Joseph S. Najem
      Department of Mechanical Engineering, The Pennsylvania State University, 336 Reber Building, University Park, Pennsylvania 16802, United States
      *[email protected]
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    ACS Applied Engineering Materials

    Cite this: ACS Appl. Eng. Mater. 2024, 2, 8, 2118–2130
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    https://doi.org/10.1021/acsaenm.4c00309
    Published July 30, 2024
    Copyright © 2024 American Chemical Society

    Abstract

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    Reservoir computing is a brain-inspired machine learning framework for processing temporal data by mapping inputs into high-dimensional spaces. Physical reservoir computers (PRCs) leverage native fading memory and nonlinearity in physical substrates, including atomic switches, photonics, volatile memristors, and, recently, memcapacitors, to achieve efficient high-dimensional mapping. Traditional PRCs often consist of homogeneous device arrays, which rely on input encoding methods and large stochastic device-to-device variations for increased nonlinearity and high-dimensional mapping. These approaches incur high preprocessing costs and restrict real-time deployment. Here, we introduce a heterogeneous memcapacitor-based PRC that exploits internal voltage offsets to enable both monotonic and nonmonotonic input-state correlations crucial for efficient high-dimensional transformations. We demonstrate our approach’s efficacy by predicting a second-order nonlinear dynamical system with a low prediction error (1.80 × 10–4). Additionally, we predict a chaotic Hénon map, achieving a low normalized root-mean-square error (0.080). Unlike previous PRCs, such errors are achieved without input encoding methods, underscoring the power of distinct input-state correlations. Most importantly, we generalize our approach to other neuromorphic devices that lack inherent voltage offsets using externally applied offsets to realize various input-state correlations. Our approach and the unprecedented performance are major milestones toward high-performance full in-materia PRCs.

    Copyright © 2024 American Chemical Society

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    Supporting Information

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    The Supporting Information is available free of charge at https://pubs.acs.org/doi/10.1021/acsaenm.4c00309.

    • Supporting notes that provide additional context and insights into relevant scientific background and results presented in the manuscript (Supporting Notes), additional figures that further illustrate key findings or support the arguments made in the manuscript (Supporting Figures), detailed descriptions of modeling techniques used in the study (Supporting Methods), and detailed description of computer simulations that support generalization of the intrinsic voltage method using external voltages on devices that lack internal voltages (Supporting Discussion) (PDF)

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    Cited By

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    This article is cited by 2 publications.

    1. Nicholas Armendarez, Md Sakib Hasan, Joseph Najem. Nonlinear memristor model with exact solution allows for ex situ reservoir computing training and in situ inference. Nanoscale 2025, 74 https://doi.org/10.1039/D4NR03439B
    2. Quanhong Chang, Wei Chen, Fudu Xing, Wanhua Li, Xun Peng, Weijie Du, Huishan Wang, Guina Xiao, Lei Huang. MXene-TiO2 heterostructured iontronic neural devices based on ion-dynamic capacitance enabling optoelectronic modulation. Applied Physics Reviews 2024, 11 (4) https://doi.org/10.1063/5.0232001

    ACS Applied Engineering Materials

    Cite this: ACS Appl. Eng. Mater. 2024, 2, 8, 2118–2130
    Click to copy citationCitation copied!
    https://doi.org/10.1021/acsaenm.4c00309
    Published July 30, 2024
    Copyright © 2024 American Chemical Society

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