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Performance Degradation in Graphene–ZnO Barristors Due to Graphene Edge Contact

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    Surfaces, Interfaces, and Applications

    Performance Degradation in Graphene–ZnO Barristors Due to Graphene Edge Contact
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    • So-Young Kim
      So-Young Kim
      School of Materials Science and Engineering  and  Center for Emerging Electronic Devices and Systems, Gwangju Institute of Science and Technology, Cheomdan-gwagiro 123, Buk-gu, Gwangju 61005, Korea
      More by So-Young Kim
    • Junga Ryou
      Junga Ryou
      Graduate School of Energy, Environment, Water, and Sustainability, School of Electrical Engineering, Korea Advanced Institute of Science and Technology (KAIST), 291 Daehak-ro, Yuseong-gu, Daejeon 34141, Korea
      More by Junga Ryou
    • Min Jae Kim
      Min Jae Kim
      School of Materials Science and Engineering  and  Center for Emerging Electronic Devices and Systems, Gwangju Institute of Science and Technology, Cheomdan-gwagiro 123, Buk-gu, Gwangju 61005, Korea
      More by Min Jae Kim
    • Kiyung Kim
      Kiyung Kim
      School of Materials Science and Engineering  and  Center for Emerging Electronic Devices and Systems, Gwangju Institute of Science and Technology, Cheomdan-gwagiro 123, Buk-gu, Gwangju 61005, Korea
      More by Kiyung Kim
    • Yongsu Lee
      Yongsu Lee
      School of Materials Science and Engineering  and  Center for Emerging Electronic Devices and Systems, Gwangju Institute of Science and Technology, Cheomdan-gwagiro 123, Buk-gu, Gwangju 61005, Korea
      More by Yongsu Lee
    • Seung-Mo Kim
      Seung-Mo Kim
      School of Materials Science and Engineering  and  Center for Emerging Electronic Devices and Systems, Gwangju Institute of Science and Technology, Cheomdan-gwagiro 123, Buk-gu, Gwangju 61005, Korea
      More by Seung-Mo Kim
    • Hyeon Jun Hwang
      Hyeon Jun Hwang
      School of Materials Science and Engineering  and  Center for Emerging Electronic Devices and Systems, Gwangju Institute of Science and Technology, Cheomdan-gwagiro 123, Buk-gu, Gwangju 61005, Korea
      More by Hyeon Jun Hwang
    • Yong-Hoon Kim*
      Yong-Hoon Kim
      Graduate School of Energy, Environment, Water, and Sustainability, School of Electrical Engineering, Korea Advanced Institute of Science and Technology (KAIST), 291 Daehak-ro, Yuseong-gu, Daejeon 34141, Korea
      School of Electrical Engineering, Korea Advanced Institute of Science and Technology (KAIST), 291 Daehak-ro, Yuseong-gu, Daejeon 34141, Korea
      *Email: [email protected]
      More by Yong-Hoon Kim
      Orcidhttp://orcid.org/0000-0001-5209-4908
    • Byoung Hun Lee*
      Byoung Hun Lee
      School of Materials Science and Engineering  and  Center for Emerging Electronic Devices and Systems, Gwangju Institute of Science and Technology, Cheomdan-gwagiro 123, Buk-gu, Gwangju 61005, Korea
      *Email: [email protected]
      More by Byoung Hun Lee
      Orcidhttp://orcid.org/0000-0002-4540-7731
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    ACS Applied Materials & Interfaces

    Cite this: ACS Appl. Mater. Interfaces 2020, 12, 25, 28768–28774
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    https://doi.org/10.1021/acsami.0c04325
    Published June 2, 2020
    Copyright © 2020 American Chemical Society
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    Abstract

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    The physical and chemical characteristics of the edge states of graphene have been studied extensively as they affect the electrical properties of graphene significantly. Likewise, the edge states of graphene in contact with semiconductors or transition-metal dichalcogenides (TMDs) are expected to have a strong influence on the electrical properties of the resulting Schottky junction devices. We found that the edge states of graphene form chemical bonds with the ZnO layer, which limits the modulation of the Fermi level at the graphene–semiconductor junction, in a manner similar to Fermi level pinning in silicon devices. Therefore, we propose that graphene-based Schottky contact should be accomplished with minimal edge contact to reduce the limits imposed on the Fermi level modulation; this hypothesis has been experimentally verified, and its microscopic mechanism is further theoretically examined.

    Copyright © 2020 American Chemical Society

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    Supporting Information

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    The Supporting Information is available free of charge at https://pubs.acs.org/doi/10.1021/acsami.0c04325.

    • Description of the graphene barristor model. Fitted curve and simulated results for the electrical characteristics of the graphene–ZnO barristor (PDF)

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    ACS Applied Materials & Interfaces

    Cite this: ACS Appl. Mater. Interfaces 2020, 12, 25, 28768–28774
    Click to copy citationCitation copied!
    https://doi.org/10.1021/acsami.0c04325
    Published June 2, 2020
    Copyright © 2020 American Chemical Society
    Request reuse permissions

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