Performance Degradation in Graphene–ZnO Barristors Due to Graphene Edge ContactClick to copy article linkArticle link copied!
- So-Young KimSo-Young KimSchool of Materials Science and Engineering and Center for Emerging Electronic Devices and Systems, Gwangju Institute of Science and Technology, Cheomdan-gwagiro 123, Buk-gu, Gwangju 61005, KoreaMore by So-Young Kim
- Junga RyouJunga RyouGraduate School of Energy, Environment, Water, and Sustainability, School of Electrical Engineering, Korea Advanced Institute of Science and Technology (KAIST), 291 Daehak-ro, Yuseong-gu, Daejeon 34141, KoreaMore by Junga Ryou
- Min Jae KimMin Jae KimSchool of Materials Science and Engineering and Center for Emerging Electronic Devices and Systems, Gwangju Institute of Science and Technology, Cheomdan-gwagiro 123, Buk-gu, Gwangju 61005, KoreaMore by Min Jae Kim
- Kiyung KimKiyung KimSchool of Materials Science and Engineering and Center for Emerging Electronic Devices and Systems, Gwangju Institute of Science and Technology, Cheomdan-gwagiro 123, Buk-gu, Gwangju 61005, KoreaMore by Kiyung Kim
- Yongsu LeeYongsu LeeSchool of Materials Science and Engineering and Center for Emerging Electronic Devices and Systems, Gwangju Institute of Science and Technology, Cheomdan-gwagiro 123, Buk-gu, Gwangju 61005, KoreaMore by Yongsu Lee
- Seung-Mo KimSeung-Mo KimSchool of Materials Science and Engineering and Center for Emerging Electronic Devices and Systems, Gwangju Institute of Science and Technology, Cheomdan-gwagiro 123, Buk-gu, Gwangju 61005, KoreaMore by Seung-Mo Kim
- Hyeon Jun HwangHyeon Jun HwangSchool of Materials Science and Engineering and Center for Emerging Electronic Devices and Systems, Gwangju Institute of Science and Technology, Cheomdan-gwagiro 123, Buk-gu, Gwangju 61005, KoreaMore by Hyeon Jun Hwang
- Yong-Hoon Kim*Yong-Hoon Kim*Email: [email protected]Graduate School of Energy, Environment, Water, and Sustainability, School of Electrical Engineering, Korea Advanced Institute of Science and Technology (KAIST), 291 Daehak-ro, Yuseong-gu, Daejeon 34141, KoreaSchool of Electrical Engineering, Korea Advanced Institute of Science and Technology (KAIST), 291 Daehak-ro, Yuseong-gu, Daejeon 34141, KoreaMore by Yong-Hoon Kim
- Byoung Hun Lee*Byoung Hun Lee*Email: [email protected]School of Materials Science and Engineering and Center for Emerging Electronic Devices and Systems, Gwangju Institute of Science and Technology, Cheomdan-gwagiro 123, Buk-gu, Gwangju 61005, KoreaMore by Byoung Hun Lee
Abstract
The physical and chemical characteristics of the edge states of graphene have been studied extensively as they affect the electrical properties of graphene significantly. Likewise, the edge states of graphene in contact with semiconductors or transition-metal dichalcogenides (TMDs) are expected to have a strong influence on the electrical properties of the resulting Schottky junction devices. We found that the edge states of graphene form chemical bonds with the ZnO layer, which limits the modulation of the Fermi level at the graphene–semiconductor junction, in a manner similar to Fermi level pinning in silicon devices. Therefore, we propose that graphene-based Schottky contact should be accomplished with minimal edge contact to reduce the limits imposed on the Fermi level modulation; this hypothesis has been experimentally verified, and its microscopic mechanism is further theoretically examined.
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