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Polar Rectification Effect in Electro-Fatigued SrTiO3-Based Junctions

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Download Hi-Res ImageDownload to MS-PowerPointCite This:ACS Appl. Mater. Interfaces 2020, 12, 28, 31645-31651
    Functional Inorganic Materials and Devices

    Polar Rectification Effect in Electro-Fatigued SrTiO3-Based Junctions
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    • Xueli Xu
      Xueli Xu
      Anhui Province Key Laboratory of Condensed Matter Physics at Extreme Conditions, High Magnetic Field Laboratory, Chinese Academy of Science, Hefei 230031, China
      University of Science and Technology of China, Hefei, Anhui 230026, China
      Key Laboratory of Photovoltaic and Energy Conservation Materials, Institute of Applied Technology, Chinese Academy of Sciences, Hefei 230031, China
      More by Xueli Xu
    • Hui Zhang
      Hui Zhang
      Fert Beijing Institute, School of Microelectronics, Beijing Advanced Innovation Center for Big Data and Brain Computing, Beihang University, Beijing 100191, China
      Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
      More by Hui Zhang
    • Zhicheng Zhong*
      Zhicheng Zhong
      Key Laboratory of Magnetic Materials and Devices, Zhejiang Province Key Laboratory of Magnetic Materials and Application Technology, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201, China
      *Email: [email protected]
      More by Zhicheng Zhong
      Orcidhttp://orcid.org/0000-0003-1507-4814
    • Ranran Zhang
      Ranran Zhang
      Anhui Province Key Laboratory of Condensed Matter Physics at Extreme Conditions, High Magnetic Field Laboratory, Chinese Academy of Science, Hefei 230031, China
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    • Lihua Yin
      Lihua Yin
      Key Laboratory of Materials Physics, Institute of Solid State Physics, Chinese Academy of Sciences, Hefei 230031, China
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      Orcidhttp://orcid.org/0000-0002-6993-1140
    • Yuping Sun
      Yuping Sun
      Key Laboratory of Materials Physics, Institute of Solid State Physics, Chinese Academy of Sciences, Hefei 230031, China
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    • Haoliang Huang
      Haoliang Huang
      Anhui Laboratory of Advanced Photon Science and Technology, National Synchrotron Radiation Laboratory, University of Science and Technology of China, Hefei 230026, P. R. China
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      Orcidhttp://orcid.org/0000-0002-5686-5519
    • Yalin Lu
      Yalin Lu
      Anhui Laboratory of Advanced Photon Science and Technology, National Synchrotron Radiation Laboratory, University of Science and Technology of China, Hefei 230026, P. R. China
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    • Yi Lu
      Yi Lu
      Institute for Theoretical Physics, Heidelberg University, Philosophenweg 19, 69120 Heidelberg, Germany
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    • Chun Zhou
      Chun Zhou
      Anhui Province Key Laboratory of Condensed Matter Physics at Extreme Conditions, High Magnetic Field Laboratory, Chinese Academy of Science, Hefei 230031, China
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    • Zongwei Ma
      Zongwei Ma
      Anhui Province Key Laboratory of Condensed Matter Physics at Extreme Conditions, High Magnetic Field Laboratory, Chinese Academy of Science, Hefei 230031, China
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      Orcidhttp://orcid.org/0000-0002-9328-9194
    • Lei Shen
      Lei Shen
      Anhui Province Key Laboratory of Condensed Matter Physics at Extreme Conditions, High Magnetic Field Laboratory, Chinese Academy of Science, Hefei 230031, China
      University of Science and Technology of China, Hefei, Anhui 230026, China
      More by Lei Shen
    • Junsong Wang
      Junsong Wang
      Anhui Province Key Laboratory of Condensed Matter Physics at Extreme Conditions, High Magnetic Field Laboratory, Chinese Academy of Science, Hefei 230031, China
      More by Junsong Wang
    • Jiandong Guo
      Jiandong Guo
      Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
      More by Jiandong Guo
      Orcidhttp://orcid.org/0000-0002-7893-022X
    • Jirong Sun*
      Jirong Sun
      Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
      *Email: [email protected]
      More by Jirong Sun
      Orcidhttp://orcid.org/0000-0003-1238-8770
    • Zhigao Sheng*
      Zhigao Sheng
      Anhui Province Key Laboratory of Condensed Matter Physics at Extreme Conditions, High Magnetic Field Laboratory, Chinese Academy of Science, Hefei 230031, China
      Key Laboratory of Photovoltaic and Energy Conservation Materials, Institute of Applied Technology, Chinese Academy of Sciences, Hefei 230031, China
      *Email: [email protected]
      More by Zhigao Sheng
      Orcidhttp://orcid.org/0000-0003-3382-5968
    Other Access OptionsSupporting Information (1)

    ACS Applied Materials & Interfaces

    Cite this: ACS Appl. Mater. Interfaces 2020, 12, 28, 31645–31651
    Click to copy citationCitation copied!
    https://doi.org/10.1021/acsami.0c08418
    Published June 18, 2020
    Copyright © 2020 American Chemical Society
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    Abstract

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    Rectifying semiconductor junctions are crucial to electronic devices. They convert alternating current into a direct one by allowing unidirectional charge flows. Analogous to the current-flow rectification for itinerary electrons, here, a polar rectification that is based on the localized oxygen vacancies (OVs) in a Ti/fatigued-SrTiO3 (fSTO) Schottky junction is first demonstrated. The fSTO with OVs is produced by an electrodegradation process. The different movabilities of localized OVs and itinerary electrons in the fSTO yield a unidirectional electric polarization at the interface of the junction under the coaction of external and built-in electric fields. Moreover, the fSTO displays a pre-ferroelectric state located between paraelectric and ferroelectric phases. The pre-ferroelectric state has three sub-states and can be easily driven into a ferroelectric state by an external electric field. These observations open up opportunities for potential polar devices and may underpin many useful polar-triggered electronic phenomena.

    Copyright © 2020 American Chemical Society

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    Supporting Information

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    The Supporting Information is available free of charge at https://pubs.acs.org/doi/10.1021/acsami.0c08418.

    • Electrodegradation process for the fatigued SrTiO3, second harmonic generation (SHG) measurements, band structural analysis of the Ti/SrTiO3/Au junctions, XRD results for both Ti/SrTiO3 and Au/SrTiO3 junctions with application of Eext, and calibration of X-ray photoelectron spectroscopy (XPS) spectra (PDF).

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    Cited By

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    This article is cited by 2 publications.

    1. Joonhyuk Lee, Younghak Kim, Jinhyung Cho, Hiromichi Ohta, Hyoungjeen Jeen. Overlayer deposition-induced control of oxide ion concentration in SrFe 0.5 Co 0.5 O 2.5 oxygen sponges. RSC Advances 2021, 11 (51) , 32210-32215. https://doi.org/10.1039/D1RA06378B
    2. Hui Zhao, Qichang An, X. Ye, B.H. Yu, Q.H. Zhang, F. Sun, Q.Y. Zhang, Fang Yang, Jiandong Guo, Jimin Zhao. Second harmonic generation in AB-type LaTiO3/SrTiO3 superlattices. Nano Energy 2021, 82 , 105752. https://doi.org/10.1016/j.nanoen.2021.105752
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    ACS Applied Materials & Interfaces

    Cite this: ACS Appl. Mater. Interfaces 2020, 12, 28, 31645–31651
    Click to copy citationCitation copied!
    https://doi.org/10.1021/acsami.0c08418
    Published June 18, 2020
    Copyright © 2020 American Chemical Society
    Request reuse permissions

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