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GeSn/SiO2 Multilayers by Magnetron Sputtering Deposition for Short-Wave Infrared Photonics

  • Adrian Slav
    Adrian Slav
    National Institute of Materials Physics, 405A Atomistilor Street, Magurele 077125, Romania
    More by Adrian Slav
  • Ioana Dascalescu
    Ioana Dascalescu
    National Institute of Materials Physics, 405A Atomistilor Street, Magurele 077125, Romania
    Faculty of Physics, University of Bucharest, 405 Atomistilor Street, Magurele 077125, Romania
  • Ana-Maria Lepadatu
    Ana-Maria Lepadatu
    National Institute of Materials Physics, 405A Atomistilor Street, Magurele 077125, Romania
  • Catalin Palade
    Catalin Palade
    National Institute of Materials Physics, 405A Atomistilor Street, Magurele 077125, Romania
  • Nicolae C. Zoita
    Nicolae C. Zoita
    National Institute for Research and Development in Optoelectronics, 409 Atomistilor Street, Magurele 077125, Romania
  • Hermine Stroescu
    Hermine Stroescu
    Institute of Physical Chemistry of the Romanian Academy, 202 Splaiul Independentei, Bucharest 060021, Romania
  • Sorina Iftimie
    Sorina Iftimie
    Faculty of Physics, University of Bucharest, 405 Atomistilor Street, Magurele 077125, Romania
  • Sorina Lazanu
    Sorina Lazanu
    National Institute of Materials Physics, 405A Atomistilor Street, Magurele 077125, Romania
  • Mariuca Gartner
    Mariuca Gartner
    Institute of Physical Chemistry of the Romanian Academy, 202 Splaiul Independentei, Bucharest 060021, Romania
  • Dan Buca
    Dan Buca
    Peter Grünberg Institut 9 (PGI 9) and JARA Fundamentals of Future Information Technologies, Forschungszentrum Jülich, Jülich 52425, Germany
    More by Dan Buca
  • Valentin S. Teodorescu
    Valentin S. Teodorescu
    National Institute of Materials Physics, 405A Atomistilor Street, Magurele 077125, Romania
    Academy of Romanian Scientists, 54 Splaiul Independentei, Bucharest 050094, Romania
  • Magdalena L. Ciurea
    Magdalena L. Ciurea
    National Institute of Materials Physics, 405A Atomistilor Street, Magurele 077125, Romania
    Academy of Romanian Scientists, 54 Splaiul Independentei, Bucharest 050094, Romania
  • Mariana Braic
    Mariana Braic
    National Institute for Research and Development in Optoelectronics, 409 Atomistilor Street, Magurele 077125, Romania
  • , and 
  • Toma Stoica*
    Toma Stoica
    National Institute of Materials Physics, 405A Atomistilor Street, Magurele 077125, Romania
    *Email: [email protected]
    More by Toma Stoica
Cite this: ACS Appl. Mater. Interfaces 2020, 12, 50, 56161–56171
Publication Date (Web):December 4, 2020
https://doi.org/10.1021/acsami.0c15887
Copyright © 2020 American Chemical Society

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    Abstract

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    The development of short-wave infrared (SWIR) photonics based on GeSn alloys is of high technological interest for many application fields, such as the Internet of things or pollution monitoring. The manufacture of crystalline GeSn is a major challenge, mainly because of the low miscibility of Ge and Sn. The use of embedded GeSn nanocrystals (NCs) by magnetron sputtering is a cost-effective and efficient method to relax the growth conditions. We report on the use of GeSn/SiO2 multilayer deposition as a way to control the NC size and their insulation. The in situ prenucleation of NCs during deposition was followed by ex situ rapid thermal annealing. The nanocrystallization of 20×(11nm_Ge0.865Sn0.135/1.5nm_SiO2) multilayers leads to formation of GeSn NCs with ∼16% Sn concentration and ∼9 nm size. Formation of GeSn domes that are vertically correlated contributes to the nanocrystallization process. The absorption limit of ∼0.4 eV in SWIR found by ellipsometry is in agreement with the spectral photosensitivity. The ITO/20×(GeSn NC/SiO2)/p-Si/Al diodes show a maximum value of the SWIR photosensitivity at a reverse voltage of 0.5 V, with extended sensitivity to wavelengths longer than 2200 nm. The multilayer diodes have higher photocurrent efficiency compared to diodes based on a thick monolayer of GeSn NCs.

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    The Supporting Information is available free of charge at https://pubs.acs.org/doi/10.1021/acsami.0c15887.

    • Surface morphology of GeSn NC/SiO2 multilayers investigated by AFM; device statistics for an ensemble of nominally identical multilayer GeSn NC/SiO2 diodes; and effect of the higher annealing temperature on photocurrent efficiency in GeSn NC/SiO2 multilayers (PDF)

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    Cited By

    This article is cited by 20 publications.

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    2. He Wang, Zhenzhen Kong, Jiale Su, Ben Li, Yijie Wang, Yuanhao Miao, Ziwei Zhou, Xuewei Zhao, Qin Hu, Henry H. Radamson. A SiGe/Si Nanostructure with Graphene Absorbent for Long Wavelength Infrared Detection. ACS Applied Nano Materials 2023, 6 (17) , 15749-15756. https://doi.org/10.1021/acsanm.3c02607
    3. Drew Z. Spera, Indika U. Arachchige. Improved Surface Passivation of Colloidal Ge1–xSnx Nanoalloys through Amorphous SiO2 Shell Growth. The Journal of Physical Chemistry C 2022, 126 (23) , 9862-9874. https://doi.org/10.1021/acs.jpcc.2c00063
    4. Lu Luo, Simone Assali, Mahmoud R. M. Atalla, Sebastian Koelling, Anis Attiaoui, Gérard Daligou, Sara Martí, Jordi Arbiol, Oussama Moutanabbir. Extended-SWIR Photodetection in All-Group IV Core/Shell Nanowires. ACS Photonics 2022, 9 (3) , 914-921. https://doi.org/10.1021/acsphotonics.1c01728
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    13. A.V. Kuchuk, P.M. Lytvyn, Yu.I. Mazur, H. Stanchu, S.V. Kondratenko, F.M. de Oliveira, S.V. Malyuta, M.D. Teodoro, M. Benamara, S.-Q. Yu, G.J. Salamo. Sn-guided self-grown Ge stripes banded by GeSn Nanowires: Formation mechanism and electric-field-induced switching from p- to n-type conduction. Applied Surface Science 2022, 604 , 154443. https://doi.org/10.1016/j.apsusc.2022.154443
    14. Mohamed A. Nawwar, Magdy S. Abo Ghazala, Lobna M. Sharaf El-Deen, Abd El-hady B. Kashyout. Impact of strain engineering and Sn content on GeSn heterostructured nanomaterials for nanoelectronics and photonic devices. RSC Advances 2022, 12 (38) , 24518-24554. https://doi.org/10.1039/D2RA04181B
    15. Marija Tkalčević, Denis Boršćak, Ivana Periša, Iva Bogdanović-Radović, Iva Šarić Janković, Mladen Petravić, Sigrid Bernstorff, Maja Mičetić. Multiple Exciton Generation in 3D-Ordered Networks of Ge Quantum Wires in Alumina Matrix. Materials 2022, 15 (15) , 5353. https://doi.org/10.3390/ma15155353
    16. Catalin Palade, Adrian Slav, Ovidiu Cojocaru, Valentin Serban Teodorescu, Toma Stoica, Magdalena Lidia Ciurea, Ana-Maria Lepadatu. SiGeSn Quantum Dots in HfO2 for Floating Gate Memory Capacitors. Coatings 2022, 12 (3) , 348. https://doi.org/10.3390/coatings12030348
    17. Andrian V. Kuchuk, P.M. Lytvyn, Yu.I. Mazur, H. Stanchu, S.V. Kondratenko, F.M. de Oliveira, S. V. Malyuta, M.D. Teodoro, M. Benamara, S.-Q. Yu, G. J. Salamo. Sn-Guided Self-Grown Ge Stripes Banded by Gesn Nanowires: Formation Mechanism and Electric-Field-Induced Switching from P- to N-Type Conduction. SSRN Electronic Journal 2022, 2021 https://doi.org/10.2139/ssrn.4097333
    18. , Ana-Maria LEPADATU,  Ionel  STAVARACHE, , Catalin PALADE, ,  Adrian SLAV, ,  Valentin A. MARALOIU, , Ioana DASCALESCU, , Ovidiu  COJOCARU, , Valentin S. TEODORESCU, , Toma STOICA, ,  Magdalena L. CIUREA, . FROM Si NANOWIRES TO Ge NANOCRYSTALS FOR VIS-NIR-SWIR SENSORS AND NON-VOLATILE MEMORIES: A REVIEW. Annals of the Academy of Romanian Scientists Series on Physics and Chemistry 2022, 7 (1) , 53-87. https://doi.org/10.56082/annalsarsciphyschem.2022.1.53
    19. Catalin Palade, Ana-Maria Lepadatu, Adrian Slav, Valentin Serban Teodorescu, Toma Stoica, Magdalena Lidia Ciurea, Doru Ursutiu, Cornel Samoila. Nanocrystallized Ge-Rich SiGe-HfO2 Highly Photosensitive in Short-Wave Infrared. Materials 2021, 14 (22) , 7040. https://doi.org/10.3390/ma14227040
    20. Xiangquan Liu, Jun Zheng, Mingming Li, Fengshuo Wan, Chaoqun Niu, Zhi Liu, Yuhua Zuo, Chunlai Xue, Buwen Cheng. Growth of relaxed GeSn film with high Sn content via Sn component-grade buffer layer structure. Journal of Physics D: Applied Physics 2021, 54 (43) , 435101. https://doi.org/10.1088/1361-6463/ac17b4

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