Enhanced Metal–Insulator Transition in Freestanding VO2 Down to 5 nm ThicknessClick to copy article linkArticle link copied!
- Kun HanKun HanDivision of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, 21 Nanyang Link, 637371, SingaporeKey Laboratory of Structure and Functional Regulation of Hybrid Materials of Ministry of Education, Institutes of Physical Science and Information Technology, Anhui University, Hefei 230601, ChinaMore by Kun Han
- Liang Wu*Liang Wu*Email: [email protected]Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, 21 Nanyang Link, 637371, SingaporeSchool of Material Science and Engineering, Kunming University of Science and Technology, Kunming, Yunnan 650093, ChinaMore by Liang Wu
- Yu CaoYu CaoDepartment of Electrical and Computer Engineering, National University of Singapore, 4 Engineering Drive 3 117583, SingaporeMore by Yu Cao
- Hanyu WangHanyu WangCenter for Quantum Transport and Thermal Energy Science (CQTES), School of Physics and Technology, Nanjing Normal University, Nanjing 210023, ChinaMore by Hanyu Wang
- Chen YeChen YeDivision of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, 21 Nanyang Link, 637371, SingaporeMore by Chen Ye
- Ke HuangKe HuangDivision of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, 21 Nanyang Link, 637371, SingaporeMore by Ke Huang
- M. MotapothulaM. MotapothulaDepartment of Physics and Astronomy, Uppsala University, Box 516, Uppsala SE-75120, SwedenDepartment of Physics, SRM University AP, Amaravati, Andhra Pradesh 522-502, IndiaMore by M. Motapothula
- Hongna Xing
- Xinghua Li
- Dong-Chen QiDong-Chen QiCentre for Materials Science, School of Chemistry and Physics, Queensland University of Technology, Brisbane, Queensland 4001, AustraliaMore by Dong-Chen Qi
- Xiao LiXiao LiCenter for Quantum Transport and Thermal Energy Science (CQTES), School of Physics and Technology, Nanjing Normal University, Nanjing 210023, ChinaMore by Xiao Li
- X. Renshaw Wang*X. Renshaw Wang*Email: [email protected]Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, 21 Nanyang Link, 637371, SingaporeSchool of Electrical and Electronic Engineering, Nanyang Technological University, 50 Nanyang Avenue, 639798, SingaporeMore by X. Renshaw Wang
Abstract

Ultrathin freestanding membranes with a pronounced metal–insulator transition (MIT) have huge potential for future flexible electronic applications as well as provide a unique aspect for the study of lattice–electron interplay. However, the reduction of the thickness to an ultrathin region (a few nm) is typically detrimental to the MIT in epitaxial films, and even catastrophic for their freestanding form. Here, we report an enhanced MIT in VO2-based freestanding membranes, with a lateral size up to millimeters and the VO2 thickness down to 5 nm. The VO2 membranes were detached by dissolving a Sr3Al2O6 sacrificial layer between the VO2 thin film and the c-Al2O3(0001) substrate, allowing the transfer onto arbitrary surfaces. Furthermore, the MIT in the VO2 membrane was greatly enhanced by inserting an intermediate Al2O3 buffer layer. In comparison with the best available ultrathin VO2 membranes, the enhancement of MIT is over 400% at a 5 nm VO2 thickness and more than 1 order of magnitude for VO2 above 10 nm. Our study widens the spectrum of functionality in ultrathin and large-scale membranes and enables the potential integration of MIT into flexible electronics and photonics.
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