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Hydrogen Barriers Based on Chemical Trapping Using Chemically Modulated Al2O3 Grown by Atomic Layer Deposition for InGaZnO Thin-Film Transistors

  • Yujin Lee
    Yujin Lee
    School of Electrical and Electronics Engineering, Yonsei University, 50 Yonsei-ro, Seodaemun-gu, Seoul 03722, Republic of Korea
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  • , 
  • Taewook Nam
    Taewook Nam
    School of Electrical and Electronics Engineering, Yonsei University, 50 Yonsei-ro, Seodaemun-gu, Seoul 03722, Republic of Korea
    Department of Chemistry, University of Colorado Boulder, Boulder, Colorado 80309, United States
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    Orcidhttp://orcid.org/0000-0001-9702-0873
  • , 
  • Seunggi Seo
    Seunggi Seo
    School of Electrical and Electronics Engineering, Yonsei University, 50 Yonsei-ro, Seodaemun-gu, Seoul 03722, Republic of Korea
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  • , 
  • Hwi Yoon
    Hwi Yoon
    School of Electrical and Electronics Engineering, Yonsei University, 50 Yonsei-ro, Seodaemun-gu, Seoul 03722, Republic of Korea
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  • , 
  • Il-Kwon Oh
    Il-Kwon Oh
    School of Electrical and Electronics Engineering, Yonsei University, 50 Yonsei-ro, Seodaemun-gu, Seoul 03722, Republic of Korea
    Department of Electrical and Computer Engineering, Ajou University, Suwon 16499, Republic of Korea
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  • , 
  • Chong Hwon Lee
    Chong Hwon Lee
    School of Electrical and Electronics Engineering, Yonsei University, 50 Yonsei-ro, Seodaemun-gu, Seoul 03722, Republic of Korea
    LG Display Company, Ltd., 245 LG-ro, Wollong-myeon, Paju-si, Gyeonggi-do 10845, Republic of Korea
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  • , 
  • Hyukjoon Yoo
    Hyukjoon Yoo
    School of Electrical and Electronics Engineering, Yonsei University, 50 Yonsei-ro, Seodaemun-gu, Seoul 03722, Republic of Korea
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  • Hyun Jae Kim
    Hyun Jae Kim
    School of Electrical and Electronics Engineering, Yonsei University, 50 Yonsei-ro, Seodaemun-gu, Seoul 03722, Republic of Korea
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    Orcidhttp://orcid.org/0000-0002-6879-9256
  • , 
  • Wonjun Choi
    Wonjun Choi
    Department of Physics, Van der Waals Materials Research Center, Yonsei University, 50 Yonsei-ro, Seodaemun-gu, Seoul 03722, Republic of Korea
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  • Seongil Im
    Seongil Im
    Department of Physics, Van der Waals Materials Research Center, Yonsei University, 50 Yonsei-ro, Seodaemun-gu, Seoul 03722, Republic of Korea
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    Orcidhttp://orcid.org/0000-0003-0723-5075
  • , 
  • Joon Young Yang
    Joon Young Yang
    LG Display Company, Ltd., 245 LG-ro, Wollong-myeon, Paju-si, Gyeonggi-do 10845, Republic of Korea
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  • Dong Wook Choi
    Dong Wook Choi
    LG Display Company, Ltd., 245 LG-ro, Wollong-myeon, Paju-si, Gyeonggi-do 10845, Republic of Korea
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  • , 
  • Choongkeun Yoo
    Choongkeun Yoo
    LG Display Company, Ltd., 245 LG-ro, Wollong-myeon, Paju-si, Gyeonggi-do 10845, Republic of Korea
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  • Ho-jin Kim
    Ho-jin Kim
    LG Display Company, Ltd., 245 LG-ro, Wollong-myeon, Paju-si, Gyeonggi-do 10845, Republic of Korea
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  • , and 
  • Hyungjun Kim*
    Hyungjun Kim
    School of Electrical and Electronics Engineering, Yonsei University, 50 Yonsei-ro, Seodaemun-gu, Seoul 03722, Republic of Korea
    *Email: [email protected]
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    Orcidhttp://orcid.org/0000-0003-2256-8046
Cite this: ACS Appl. Mater. Interfaces 2021, 13, 17, 20349–20360
Publication Date (Web):April 5, 2021
https://doi.org/10.1021/acsami.1c02597
Copyright © 2021 American Chemical Society
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    Abstract

    Abstract Image

    In this study, the excellent hydrogen barrier properties of the atomic-layer-deposition-grown Al2O3 (ALD Al2O3) are first reported for improving the stability of amorphous indium gallium zinc oxide (a-IGZO) thin-film transistors (TFTs). Chemical species in Al2O3 were artificially modulated during the ALD process using different oxidants, such as H2O and O3 (H2O–Al2O3 and O3–Al2O3, respectively). When hydrogen was incorporated into the H2O–Al2O3-passivated TFT, a large negative shift in Vth (ca. −12 V) was observed. In contrast, when hydrogen was incorporated into the O3–Al2O3-passivated TFT, there was a negligible shift in Vth (ca. −0.66 V), which indicates that the O3–Al2O3 has a remarkable hydrogen barrier property. We presented a mechanism for trapping hydrogen in a O3–Al2O3 via various chemical and electrical analyses and revealed that hydrogen molecules were trapped by C–O bonds in the O3–Al2O3, preventing the inflow of hydrogen to the a-IGZO. Additionally, to minimize the deterioration of the pristine device that occurs after a barrier deposition, a bi-layered hydrogen barrier by stacking H2O- and O3–Al2O3 is adopted. Such a barrier can provide ultrastable performance without degradation. Therefore, we envisioned that the excellent hydrogen barrier suggested in this paper can provide the possibility of improving the stability of devices in various fields by effectively blocking hydrogen inflows.

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    The Supporting Information is available free of charge at https://pubs.acs.org/doi/10.1021/acsami.1c02597.

    • Each hydrogen barrier formation using two different oxidants; XPS spectra of H2O–Al2O3 and O3–Al2O3; reliability test of a-IGZO TFT without hydrogen barriers, with H2O–Al2O3, O3–Al2O3, and bi-layered Al2O3 before and after hydrogen plasma treatment; transfer characteristics after the NBTS test of a-IGZO TFTs without hydrogen barriers before and after hydrogen plasma treatment; a-IGZO TFT with bi-layered Al2O3; comparison of transfer curve of a-IGZO TFT with O3–Al2O3 and bi-layered Al2O3 hydrogen barrier; extracted parameters of a-IGZO TFT without hydrogen barriers depending on the hydrogen plasma time; extracted parameters of a-IGZO TFT after the deposition of the H2O–Al2O3 and O3–Al2O3 followed by hydrogen plasma treatment; binding energy, full width at half-maximum, and atomic percentage of deconvoluted C1s of H2O–Al2O3 and O3–Al2O3; and extracted parameters and standard deviations of a-IGZO TFT after the reliability test (PDF)

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    Cited By

    This article is cited by 12 publications.

    1. Ho Young Lee, Jae Seok Hur, Iaan Cho, Cheol Hee Choi, Seong Hun Yoon, Yongwoo Kwon, Bonggeun Shong, Jae Kyeong Jeong. Comparative Study on Indium Precursors for Plasma-Enhanced Atomic Layer Deposition of In2O3 and Application to High-Performance Field-Effect Transistors. ACS Applied Materials & Interfaces 2023, 15 (44) , 51399-51410. https://doi.org/10.1021/acsami.3c11796
    2. Soo-Hyun Bae, Jong-Heon Yang, Yong-Hae Kim, Young Ha Kwon, Nak-Jin Seong, Kyu-Jeong Choi, Chi-Sun Hwang, Sung-Min Yoon. Roles of Oxygen Interstitial Defects in Atomic-Layer Deposited InGaZnO Thin Films with Controlling the Cationic Compositions and Gate-Stack Processes for the Devices with Subμm Channel Lengths. ACS Applied Materials & Interfaces 2022, 14 (27) , 31010-31023. https://doi.org/10.1021/acsami.2c07258
    3. Seo-Hyun Moon, Soo-Hyun Bae, Young Ha Kwon, Nak-Jin Seong, Jong-Heon Yang, Yong-Hae Kim, Kyu-Jeong Choi, Chi-Sun Hwang, Sung-Min Yoon. Combination of Gate-Stack Process and Cationic Composition Control for Boosting the Performance of Thin-Film Transistors Using In–Ga–Zn–O Active Channels Prepared by Atomic Layer Deposition. ACS Applied Electronic Materials 2021, 3 (11) , 4849-4858. https://doi.org/10.1021/acsaelm.1c00689
    4. Hye-Mi Kim, Dong-Gyu Kim, Yoon-Seo Kim, Minseok Kim, Jin-Seong Park. Atomic layer deposition for nanoscale oxide semiconductor thin film transistors: review and outlook. International Journal of Extreme Manufacturing 2023, 5 (1) , 012006. https://doi.org/10.1088/2631-7990/acb46d
    5. Hyukjoon Yoo, Kyungmoon Kwak, I. Sak Lee, Dongwoo Kim, Kyungho Park, Min Seong Kim, Jae Seong Han, Sujin Lee, Tae Sang Kim, Jun Hyung Lim, Hyun Jae Kim. Enhancement of visible light detection for indium–gallium–zinc oxide-based transparent phototransistor via application of porous-structured polytetrafluoroethylene. Applied Physics Letters 2022, 121 (14) https://doi.org/10.1063/5.0107623
    6. Md Mobaidul Islam, Md. Mehedi Hasan, Arqum Ali, Jinbaek Bae, Jin Jang. Low Cost, Al 2 O 3 and ZrAlO x Stack Passivation by Spray Pyrolysis for Highly Stable Amorphous InGaZnO Thin‐Film Transistors. Advanced Materials Interfaces 2022, 9 (26) https://doi.org/10.1002/admi.202200906
    7. Shin-Ho Noh, Hyo-Eun Kim, Young-Ha Kwon, Nak-Jin Seong, Kyu-Jeong Choi, Sung-Min Yoon. Device feasibility and performance improvement methodologies for thin film transistors using In-Ga-Sn-O channels prepared by atomic-layer deposition. Journal of Vacuum Science & Technology B 2022, 40 (4) https://doi.org/10.1116/6.0001945
    8. Soo-Hyun Bae, Seo-Hyun Moon, Young Ha Kwon, Nak-Jin-Seong, Kyu-Jeong Choi, Sung-Min Yoon. Synergic strategies of composition-modified bilayer channel configuration and ozone-processed gate stacks for atomic-layer deposited In-Ga-Zn-O thin-film transistors. Journal of Alloys and Compounds 2022, 906 , 164283. https://doi.org/10.1016/j.jallcom.2022.164283
    9. Xue Chen, Jiaxian Wan, Liwei Ji, Juan Gao, Hao Wu, Chang Liu. Influence of precursor purge time on the performance of ZnO TFTs fabricated by atomic layer deposition. Vacuum 2022, 200 , 111022. https://doi.org/10.1016/j.vacuum.2022.111022
    10. George W. Mattson, Kyle T. Vogt, John F. Wager, Matt W. Graham. Hydrogen incorporation into amorphous indium gallium zinc oxide thin-film transistors. Journal of Applied Physics 2022, 131 (10) https://doi.org/10.1063/5.0078805
    11. Ming-Xuan Lee, Jih-Chao Chiu, Song-Ling Li, Eknath Sarkar, Yu-Ciao Chen, Chia-Chun Yen, Tsang-Long Chen, Cheng-Hsu Chou, C. W. Liu. Mobility Enhancement and Abnormal Humps in Top-Gate Self-Aligned Double-Layer Amorphous InGaZnO TFTs. IEEE Journal of the Electron Devices Society 2022, 10 , 301-308. https://doi.org/10.1109/JEDS.2022.3163774
    12. Ju-Hwan Han, Tae-Yeon Kim, Dong-Yeon Kim, Hae Lin Yang, Jin-Seong Park. Water vapor and hydrogen gas diffusion barrier characteristics of Al 2 O 3 –alucone multi-layer structures for flexible OLED display applications. Dalton Transactions 2021, 50 (43) , 15841-15848. https://doi.org/10.1039/D1DT02989D
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