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Neutralizing Defect States in MoS2 Monolayers

  • Xiaheng Huang
    Xiaheng Huang
    Department of Electrical Engineering and Computer Science, University of Michigan, Ann Arbor, Michigan 48109, United States
  • Zidong Li
    Zidong Li
    Department of Electrical Engineering and Computer Science, University of Michigan, Ann Arbor, Michigan 48109, United States
    More by Zidong Li
  • Xiao Liu
    Xiao Liu
    Department of Electrical Engineering and Computer Science, University of Michigan, Ann Arbor, Michigan 48109, United States
    More by Xiao Liu
  • Jize Hou
    Jize Hou
    Department of Electrical Engineering and Computer Science, University of Michigan, Ann Arbor, Michigan 48109, United States
    More by Jize Hou
  • Jongchan Kim
    Jongchan Kim
    Department of Electrical Engineering and Computer Science, University of Michigan, Ann Arbor, Michigan 48109, United States
    More by Jongchan Kim
  • Stephen R. Forrest
    Stephen R. Forrest
    Department of Electrical Engineering and Computer Science, University of Michigan, Ann Arbor, Michigan 48109, United States
    Department of Physics, University of Michigan, Ann Arbor, Michigan 48109, United States
    Department of Materials Science and Engineering, University of Michigan, Ann Arbo, Michigan 48109, United States
  • , and 
  • Parag B. Deotare*
    Parag B. Deotare
    Department of Electrical Engineering and Computer Science, University of Michigan, Ann Arbor, Michigan 48109, United States
    *Email: [email protected]
Cite this: ACS Appl. Mater. Interfaces 2021, 13, 37, 44686–44692
Publication Date (Web):August 4, 2021
https://doi.org/10.1021/acsami.1c07956
Copyright © 2021 American Chemical Society

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    Abstract

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    We report a method to neutralize the mid-gap defect states in MoS2 monolayers using laser soaking of an organic/transition metal oxide (TMO) blend thin film. The treated MoS2 monolayer shows negligible emission from defect states as compared to the as-exfoliated MoS2, accompanied by a photoluminescence quantum yield improvement from 0.018 to 4.5% at excitation power densities of 10 W/cm2. The effectiveness of the method toward defect neutralization is governed by the polaron pair generated at the organic/TMO interface, the diffusion of free electrons, and the subsequent formation of TMO radicals at the MoS2 monolayer. The treated monolayers are stable in air, vacuum, and acetone environments, potentially enabling the fabrication of defect-free optoelectronic devices based on 2D materials and 2D/organic heterojunctions.

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    The Supporting Information is available free of charge at https://pubs.acs.org/doi/10.1021/acsami.1c07956.

    • Reliability; thermal effects; temperature-dependent PL; CT and neutralization; PLQY measurement; laser energy-dependent soaking; material-dependent laser soaking; laser soaking on WS2; stability in solvents; in situ Raman spectroscopy; and table of effectiveness of laser soaking for different organic/TMO blends and TMDs (PDF)

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    Cited By

    This article is cited by 5 publications.

    1. Yu-Chi Yao, Bo-Yi Wu, Hao-Ting Chin, Zhi-Long Yen, Chu-Chi Ting, Mario Hofmann, Ya-Ping Hsieh. Nitrogen Pretreatment of Growth Substrates for Vacancy-Saturated MoS2. ACS Applied Materials & Interfaces 2023, 15 (36) , 42746-42752. https://doi.org/10.1021/acsami.3c07793
    2. Bin Liu, Jason Lynch, Haonan Zhao, Ben R. Conran, Clifford McAleese, Deep Jariwala, Stephen R. Forrest. Long-Range Propagation of Exciton-Polaritons in Large-Area 2D Semiconductor Monolayers. ACS Nano 2023, 17 (15) , 14442-14448. https://doi.org/10.1021/acsnano.3c03485
    3. Nurul Azam, Matthew G. Boebinger, Suman Jaiswal, Raymond R. Unocic, Parvin Fathi-Hafshejani, Masoud Mahjouri-Samani. Laser-Assisted Synthesis of Monolayer 2D MoSe2 Crystals with Tunable Vacancy Concentrations: Implications for Gas and Biosensing. ACS Applied Nano Materials 2022, 5 (7) , 9129-9139. https://doi.org/10.1021/acsanm.2c01458
    4. Zidong Li, Darwin F. Cordovilla Leon, Woncheol Lee, Kanak Datta, Zhengyang Lyu, Jize Hou, Takashi Taniguchi, Kenji Watanabe, Emmanouil Kioupakis, Parag B. Deotare. Dielectric Engineering for Manipulating Exciton Transport in Semiconductor Monolayers. Nano Letters 2021, 21 (19) , 8409-8417. https://doi.org/10.1021/acs.nanolett.1c02990
    5. Rahul Kesarwani, Kristan Bryan Simbulan, Teng-De Huang, Yu-Fan Chiang, Nai-Chang Yeh, Yann-Wen Lan, Ting-Hua Lu. Control of trion-to-exciton conversion in monolayer WS 2 by orbital angular momentum of light. Science Advances 2022, 8 (13) https://doi.org/10.1126/sciadv.abm0100