All-Oxide p–n Junction Thermoelectric Generator Based on SnOx and ZnO Thin FilmsClick to copy article linkArticle link copied!
- Eliana M. F. Vieira*Eliana M. F. Vieira*Email: [email protected]CMEMS—UMINHO, Universidade do Minho, Campus Azurem, 4804-533 Guimaraes, PortugalMore by Eliana M. F. Vieira
- José P. B. Silva*José P. B. Silva*Email: [email protected]Centro de Física das Universidades do Minho e do Porto (CF-UM-UP), Campus de Gualtar, 4710-057 Braga, PortugalMore by José P. B. Silva
- Kateřina VeltruskáKateřina VeltruskáDepartment of Surface and Plasma Science, Faculty of Mathematics and Physics, Charles University, V Holešovičkách 2, 18000 Prague 8, Czech RepublicMore by Kateřina Veltruská
- Cosmin M. IstrateCosmin M. IstrateNational Institute of Materials Physics, 105 bis Atomistilor, 077125 Magurele, RomaniaMore by Cosmin M. Istrate
- Veniero LenziVeniero LenziCentro de Física das Universidades do Minho e do Porto (CF-UM-UP), Campus de Gualtar, 4710-057 Braga, PortugalMore by Veniero Lenzi
- Vanira TrifilettiVanira TrifilettiSchool of Engineering and Materials Science, Queen Mary University of London, Mile End Road, London E1 4NS, U.K.More by Vanira Trifiletti
- Bruno LorenziBruno LorenziDepartment of Materials Science, University of Milano-Bicocca, via R. Cozzi 55, I-20125 Milano, ItalyMore by Bruno Lorenzi
- Vladimír MatolínVladimír MatolínDepartment of Surface and Plasma Science, Faculty of Mathematics and Physics, Charles University, V Holešovičkách 2, 18000 Prague 8, Czech RepublicMore by Vladimír Matolín
- Corneliu GhicaCorneliu GhicaNational Institute of Materials Physics, 105 bis Atomistilor, 077125 Magurele, RomaniaMore by Corneliu Ghica
- Luis MarquesLuis MarquesCentro de Física das Universidades do Minho e do Porto (CF-UM-UP), Campus de Gualtar, 4710-057 Braga, PortugalMore by Luis Marques
- Oliver FenwickOliver FenwickSchool of Engineering and Materials Science, Queen Mary University of London, Mile End Road, London E1 4NS, U.K.More by Oliver Fenwick
- Luis M. GoncalvesLuis M. GoncalvesCMEMS—UMINHO, Universidade do Minho, Campus Azurem, 4804-533 Guimaraes, PortugalMore by Luis M. Goncalves
Abstract
Achieving thermoelectric devices with high performance based on low-cost and nontoxic materials is extremely challenging. Moreover, as we move toward an Internet-of-Things society, a miniaturized local power source such as a thermoelectric generator (TEG) is desired to power increasing numbers of wireless sensors. Therefore, in this work, an all-oxide p–n junction TEG composed of low-cost, abundant, and nontoxic materials, such as n-type ZnO and p-type SnOx thin films, deposited on borosilicate glass substrate is proposed. A type II heterojunction between SnOx and ZnO films was predicted by density functional theory (DFT) calculations and confirmed experimentally by X-ray photoelectron spectroscopy (XPS). Moreover, scanning transmission electron microscopy (STEM) combined with energy-dispersive X-ray spectroscopy (EDS) show a sharp interface between the SnOx and ZnO layers, confirming the high quality of the p–n junction even after annealing at 523 K. ZnO and SnOx thin films exhibit Seebeck coefficients (α) of ∼121 and ∼258 μV/K, respectively, at 298 K, resulting in power factors (PF) of 180 μW/m K2 (for ZnO) and 37 μW/m K2 (for SnOx). Moreover, the thermal conductivities of ZnO and SnOx films are 8.7 and 1.24 W/m K, respectively, at 298 K, with no significant changes until 575 K. The four pairs all-oxide TEG generated a maximum power output (Pout) of 1.8 nW (≈126 μW/cm2) at a temperature difference of 160 K. The output voltage (Vout) and output current (Iout) at the maximum power output of the TEG are 124 mV and 0.0146 μA, respectively. This work paves the way for achieving a high-performance TEG device based on oxide thin films.
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