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Polyimide-Doped Indium–Gallium–Zinc Oxide-Based Transparent and Flexible Phototransistor for Visible Light Detection

  • Ki Seok Kim
    Ki Seok Kim
    School of Electrical and Electronic Engineering, Yonsei University, 50 Yonsei-ro, Seodaemun-gu, Seoul 03722, Republic of Korea
    LG Display Co., Ltd., 245, LG-ro, Wollong-myeon, Paju-si, Gyeonggi-do 10845, Republic of Korea
    More by Ki Seok Kim
  • Min Seong Kim
    Min Seong Kim
    School of Electrical and Electronic Engineering, Yonsei University, 50 Yonsei-ro, Seodaemun-gu, Seoul 03722, Republic of Korea
  • Jusung Chung
    Jusung Chung
    School of Electrical and Electronic Engineering, Yonsei University, 50 Yonsei-ro, Seodaemun-gu, Seoul 03722, Republic of Korea
    More by Jusung Chung
  • Dongwoo Kim
    Dongwoo Kim
    School of Electrical and Electronic Engineering, Yonsei University, 50 Yonsei-ro, Seodaemun-gu, Seoul 03722, Republic of Korea
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  • I. Sak Lee
    I. Sak Lee
    School of Electrical and Electronic Engineering, Yonsei University, 50 Yonsei-ro, Seodaemun-gu, Seoul 03722, Republic of Korea
    More by I. Sak Lee
  • , and 
  • Hyun Jae Kim*
    Hyun Jae Kim
    School of Electrical and Electronic Engineering, Yonsei University, 50 Yonsei-ro, Seodaemun-gu, Seoul 03722, Republic of Korea
    *Email: [email protected]
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Cite this: ACS Appl. Mater. Interfaces 2022, 14, 18, 21150–21158
Publication Date (Web):April 28, 2022
https://doi.org/10.1021/acsami.2c01769
Copyright © 2022 American Chemical Society

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    Abstract

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    We report a transparent and flexible polyimide (PI)-doped single-layer (PSL) phototransistor for the detection of visible light. The PSL was deposited on a SiO2 gate insulator by a co-sputtering process using amorphous indium–gallium–zinc oxide (IGZO) and PI targets simultaneously. The PSL acted as both a channel layer and a visible-light absorption layer. PI is one of the few flexible organic materials that can be fabricated into sputtering targets. Compared with the IGZO phototransistor without PI doping, the PSL phototransistor exhibited improved optoelectronic characteristics under illumination with 635 nm red light of 1 mW/mm2 intensity; the obtained photoresponsivity ranged from 15.00 to 575.00 A/W, the photosensitivity from 1.38 × 101 to 9.86 × 106, and the specific detectivity from 1.35 × 107 to 5.83 × 1011 Jones. These improvements are attributed to subgap states induced by the PI doping, which formed decomposed organic molecules, oxygen vacancies, and metal hydroxides. Furthermore, a flexible PSL phototransistor was fabricated and showed stable optoelectronic characteristics even after 10,000 bending tests.

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    The Supporting Information is available free of charge at https://pubs.acs.org/doi/10.1021/acsami.2c01769.

    • Comparison of optoelectronic characteristics and subthreshold swing of each sample with error bars of the IGZO and the PSL phototransistors: photoresponsivity, photosensitivity, specific detectivity, subthreshold swing, and threshold voltage; transient response of PSL phototransistor over time under red light (635 nm, 10 mW/mm2) at 1.0 Hz; enlarged IT characteristics of the PSL phototransistor; NBS test result of IGZO and PSL phototransistor up to 10,000 s; comparison of optoelectronic characteristics of previous studies in oxide semiconductor-based phototransistor without an absorption layer; and comparison of response time of previous studies in phototransistor without an absorption layer (PDF)

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    Cited By

    This article is cited by 3 publications.

    1. Jun Hyung Jeong, Min Ho Park, Hanseok Jeong, Wonsik Kim, Soohyung Park, Woojin Jeon, Seong Jun Kang. Boosting the Visible Light Optoelectronic Synaptic Characteristics of Solution-Processed IGZO Transistors via Vertically Diffused Cd Dopants. ACS Applied Electronic Materials 2023, 5 (11) , 6275-6285. https://doi.org/10.1021/acsaelm.3c01158
    2. Arijit Sarkar, Sang Yeol Lee. Efficient UV-Sensitive Si-In-ZnO-Based Photo-TFT and Its Behavior as an Optically Stimulated Artificial Synapse. ACS Applied Electronic Materials 2023, 5 (2) , 1057-1066. https://doi.org/10.1021/acsaelm.2c01559
    3. Mengzhen Hu, Lei Xu, Xinnan Zhang, Hanyuan Hao, Shi Zong, Haimin Chen, Zengcai Song, Shijun Luo, Zhihua Zhu. High mobility amorphous InSnO thin film transistors via low-temperature annealing. Applied Physics Letters 2023, 122 (3) , 033503. https://doi.org/10.1063/5.0131595