Coexistence of Contact Electrification and Dynamic p–n Junction Modulation Effects in TriboelectrificationClick to copy article linkArticle link copied!
- Haobin WangHaobin WangKey Laboratory of Micro-nano Electronic Devices and Smart Systems of Zhejiang Province, College of Information Science & Electronic Engineering, Zhejiang University, Hangzhou 310027, ChinaInternational Joint Innovation Center, Zhejiang University, Haining 314400, ChinaMore by Haobin Wang
- Shuyi HuangShuyi HuangShanghai Precision Metrology & Test Research Institute, 3888 Yuanjiang Road, Shanghai 201109, ChinaMore by Shuyi Huang
- Haoze KuangHaoze KuangKey Laboratory of Micro-nano Electronic Devices and Smart Systems of Zhejiang Province, College of Information Science & Electronic Engineering, Zhejiang University, Hangzhou 310027, ChinaInternational Joint Innovation Center, Zhejiang University, Haining 314400, ChinaMore by Haoze Kuang
- Taoyu ZouTaoyu ZouSchool of Electronic and Computer Engineering, Peking University Shenzhen Graduate School, Shenzhen 518055, ChinaMore by Taoyu Zou
- Pandey RajagopalanPandey RajagopalanKey Laboratory of Micro-nano Electronic Devices and Smart Systems of Zhejiang Province, College of Information Science & Electronic Engineering, Zhejiang University, Hangzhou 310027, ChinaInternational Joint Innovation Center, Zhejiang University, Haining 314400, ChinaMore by Pandey Rajagopalan
- Xiaozhi Wang*Xiaozhi Wang*Email: [email protected]Key Laboratory of Micro-nano Electronic Devices and Smart Systems of Zhejiang Province, College of Information Science & Electronic Engineering, Zhejiang University, Hangzhou 310027, ChinaInternational Joint Innovation Center, Zhejiang University, Haining 314400, ChinaMore by Xiaozhi Wang
- Yubo LiYubo LiKey Laboratory of Micro-nano Electronic Devices and Smart Systems of Zhejiang Province, College of Information Science & Electronic Engineering, Zhejiang University, Hangzhou 310027, ChinaInternational Joint Innovation Center, Zhejiang University, Haining 314400, ChinaMore by Yubo Li
- Hao JinHao JinKey Laboratory of Micro-nano Electronic Devices and Smart Systems of Zhejiang Province, College of Information Science & Electronic Engineering, Zhejiang University, Hangzhou 310027, ChinaInternational Joint Innovation Center, Zhejiang University, Haining 314400, ChinaMore by Hao Jin
- Shurong DongShurong DongKey Laboratory of Micro-nano Electronic Devices and Smart Systems of Zhejiang Province, College of Information Science & Electronic Engineering, Zhejiang University, Hangzhou 310027, ChinaInternational Joint Innovation Center, Zhejiang University, Haining 314400, ChinaMore by Shurong Dong
- Hang ZhouHang ZhouSchool of Electronic and Computer Engineering, Peking University Shenzhen Graduate School, Shenzhen 518055, ChinaMore by Hang Zhou
- Tawfique HasanTawfique HasanDepartment of Engineering, University of Cambridge, 9 JJ Thomson Avenue, Cambridge CB3 0FA, U.K.More by Tawfique Hasan
- Luigi G. OcchipintiLuigi G. OcchipintiDepartment of Engineering, University of Cambridge, 9 JJ Thomson Avenue, Cambridge CB3 0FA, U.K.More by Luigi G. Occhipinti
- Jong Min KimJong Min KimDepartment of Engineering, University of Cambridge, 9 JJ Thomson Avenue, Cambridge CB3 0FA, U.K.More by Jong Min Kim
- Jikui Luo*Jikui Luo*Email: [email protected]Key Laboratory of Micro-nano Electronic Devices and Smart Systems of Zhejiang Province, College of Information Science & Electronic Engineering, Zhejiang University, Hangzhou 310027, ChinaInternational Joint Innovation Center, Zhejiang University, Haining 314400, ChinaMore by Jikui Luo
Abstract
The triboelectric effect occurs when two dissimilar materials are in physical contact, attributed to the combination of contact electrification (CE) and electrostatic induction. It has been extensively explored for the development of high-performance triboelectric nanogenerators (TENGs). In this paper, we report on, besides the CE-related charge generation, an additional charge generation phenomenon associated with the modulation of the p–n junction when two semiconductor materials [methylammonium lead iodide (MAPI) and poly(3,4-ethylenedioxythiophene)–poly(styrenesulfonate) (PEDOT:PSS)] are put in contact and separated dynamically. The electrical outputs generated by the CE effect are determined by the surface potential difference between the two friction materials, while the ones induced by the p–n junction modulation are determined by the dynamic variations in the depletion widths of the two semiconductor friction materials. The outputs generated by the CE effect and the p–n junction effect are well separated in time scale; the p–n junction modulation contributes ∼20% of the total charge generated and could be varied by changing the chemical composition of the semiconductors. The results may provide an alternative method for the development of high-performance TENGs by utilizing this additional p–n junction modulation effect.
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