Semi-monolithic Integration of All-Chalcopyrite Multijunction Solar Conversion Devices via Thin-Film Bonding and Exfoliation
- Kai Outlaw-SpruellKai Outlaw-SpruellHawaii Natural Energy Institute, University of Hawaii, Honolulu, Hawaii 96822, United StatesMore by Kai Outlaw-Spruell
- Joshua CrunkJoshua CrunkHawaii Natural Energy Institute, University of Hawaii, Honolulu, Hawaii 96822, United StatesMore by Joshua Crunk
- Wilman SeptinaWilman SeptinaResearch Center for Electronics, National Research and Innovation Agency, Jl. Cisitu, Bandung 40135, IndonesiaMore by Wilman Septina
- Christopher P. Muzzillo
- Kai Zhu
- , and
- Nicolas Gaillard*
We report on a semi-monolithic integration method to circumvent processing incompatibility between materials of dissimilar classes and combine them into multijunction devices for photovoltaic and photoelectrochemical applications. Proof-of-concept all-chalcopyrite tandems were obtained by consecutive transfer of fully integrated unpatterned 1.85 eV CuGa3Se5 and 1.13 eV CuInGaSe2 PV stacks from their Mo/soda lime glass substrates onto a new single host substrate. This transfer approach consists of two key steps: (1) bonding of the solar stack (face down) onto a handle (e.g., SnO2:F, FTO) using a transparent conductive composite and (2) delamination of the solar stack at the chalcopyrite/Mo interface by employing a wedge-based exfoliation technique. Upon transfer onto FTO, a CuGa3Se5 champion device demonstrated near-coincident photocurrent density–voltage characteristic with a baseline measurement. Then, the exfoliated CuGa3Se5 single-junction stack transferred onto FTO served as the new host onto which a second fully processed CuInGaSe2 stack was bonded (face down) onto and liberated from its Mo/SLG substrate, leading to a complete transfer of both sub-cells onto one FTO substrate. A champion semi-monolithic tandem device exhibited a power conversion efficiency of 5.04% with an open-circuit voltage, a short-circuit current density, and a fill factor of 1.24 V, 7.19 mA/cm2, and 56.7%, respectively. This first-time demonstration of a fully operational semi-monolithic device provides a new avenue to combine thermally, mechanically, and/or chemically incompatible thin-film material classes into tandem photovoltaic and photoelectrochemical devices while maintaining state-of-the-art sub-cell processing.
Read this article
To access this article, please review the available access options below.
This article has not yet been cited by other publications.