Improved Thermal Dissipation in a MoS2 Field-Effect Transistor by Hybrid High-k Dielectric LayersClick to copy article linkArticle link copied!
- Jian HuangJian HuangWuhan National High Magnetic Field Center and School of Materials Science & Engineering, Huazhong University of Science and Technology, Wuhan 430074, ChinaMore by Jian Huang
- Yifan LiYifan LiState Key Laboratory of Digital Manufacturing Equipment and Technology, School of Mechanical Science and Engineering, Huazhong University of Science and Technology, Wuhan 430074, ChinaMore by Yifan Li
- Xiaotong YuXiaotong YuState Key Laboratory of Digital Manufacturing Equipment and Technology, School of Mechanical Science and Engineering, Huazhong University of Science and Technology, Wuhan 430074, ChinaMore by Xiaotong Yu
- Zexin LiuZexin LiuSchool of Chemistry and Chemical Engineering, Huazhong University of Science and Technology, Wuhan 430074, ChinaMore by Zexin Liu
- Fanfan WangFanfan WangWuhan National High Magnetic Field Center and School of Materials Science & Engineering, Huazhong University of Science and Technology, Wuhan 430074, ChinaMore by Fanfan Wang
- Yue YueYue YueSchool of Chemistry and Chemical Engineering, Huazhong University of Science and Technology, Wuhan 430074, ChinaMore by Yue Yue
- Rong ZhangRong ZhangWuhan National High Magnetic Field Center and School of Materials Science & Engineering, Huazhong University of Science and Technology, Wuhan 430074, ChinaMore by Rong Zhang
- Ruiwen DaiRuiwen DaiSchool of Physics, Huazhong University of Science and Technology, Wuhan 430074, ChinaMore by Ruiwen Dai
- Kai YangKai YangWuhan National High Magnetic Field Center and School of Materials Science & Engineering, Huazhong University of Science and Technology, Wuhan 430074, ChinaMore by Kai Yang
- Heng LiuHeng LiuCollege of Information and Control Engineering, Xi’an University of Architecture and Technology, Xi’an 710055, ChinaMore by Heng Liu
- Qingyang FanQingyang FanCollege of Information and Control Engineering, Xi’an University of Architecture and Technology, Xi’an 710055, ChinaMore by Qingyang Fan
- Donghui HongDonghui HongCollege of Aerospace Science and Technology, National University of Defense Technology, Changsha 410073, ChinaMore by Donghui Hong
- Qiang ChenQiang ChenCollege of Aerospace Science and Technology, National University of Defense Technology, Changsha 410073, ChinaMore by Qiang Chen
- Zhiqiang WangZhiqiang WangSchool of Electrical and Electronic Engineering, Huazhong University of Science and Technology, Wuhan 430074, ChinaMore by Zhiqiang Wang
- Yuan GaoYuan GaoState Key Laboratory of Digital Manufacturing Equipment and Technology, School of Mechanical Science and Engineering, Huazhong University of Science and Technology, Wuhan 430074, ChinaMore by Yuan Gao
- Guoqing Xin*Guoqing Xin*Email: [email protected]Wuhan National High Magnetic Field Center and School of Materials Science & Engineering, Huazhong University of Science and Technology, Wuhan 430074, ChinaMore by Guoqing Xin
Abstract
Transition metal dichalcogenides like MoS2 have been considered as crucial channel materials beyond silicon to continuously advance transistor scaling down owing to their two-dimensional structure and exceptional electrical properties. However, the undesirable interface morphology and vibrational phonon frequency mismatch between MoS2 and the dielectric layer induce low thermal boundary conductance, resulting in overheating issues and impeding electrical performance improvement in the MoS2 field-effect transistors. Here, we employed hybrid high-k dielectric layers of Al2O3/HfO2 to simultaneously reduce the interfacial thermal resistance and improve device electrical performance. The enhanced contact, greater vibrational phonon overlapping region, and stronger interfacial bonding force between the top Al2O3 layer and MoS2 promote the heat removal efficiency across the interface to the substrate. Under the same input power density, the temperature profile of the MoS2 transistor on the Al2O3/HfO2 has been largely reduced compared to that of the device on HfO2, with a maximum reduction of 49.5 °C. In addition, the field-effect mobility and current of MoS2 devices on the Al2O3/HfO2 high-k dielectric layers have been significantly improved, attributed to the depressed electron scattering and trap states at the interface. The design of the hybrid high-k dielectric layers provides an efficient solution to simultaneously improve the thermal and electrical performance of the two-dimensional devices.
Cited By
This article has not yet been cited by other publications.
Article Views
Altmetric
Citations
Article Views are the COUNTER-compliant sum of full text article downloads since November 2008 (both PDF and HTML) across all institutions and individuals. These metrics are regularly updated to reflect usage leading up to the last few days.
Citations are the number of other articles citing this article, calculated by Crossref and updated daily. Find more information about Crossref citation counts.
The Altmetric Attention Score is a quantitative measure of the attention that a research article has received online. Clicking on the donut icon will load a page at altmetric.com with additional details about the score and the social media presence for the given article. Find more information on the Altmetric Attention Score and how the score is calculated.