Volatile Resistive Switching and Short-Term Synaptic Plasticity in a Ferroelectric-Modulated SrFeOx MemristorClick to copy article linkArticle link copied!
- Wenjie HuWenjie HuInstitute for Advanced Materials and Guangdong Provincial Key Laboratory of Optical Information Materials and Technology, South China Academy of Advanced Optoelectronics, South China Normal University, Guangzhou 510006, ChinaMore by Wenjie Hu
- Zhen Fan*Zhen Fan*Email: [email protected]Institute for Advanced Materials and Guangdong Provincial Key Laboratory of Optical Information Materials and Technology, South China Academy of Advanced Optoelectronics, South China Normal University, Guangzhou 510006, ChinaMore by Zhen Fan
- Linyuan MoLinyuan MoInstitute for Advanced Materials and Guangdong Provincial Key Laboratory of Optical Information Materials and Technology, South China Academy of Advanced Optoelectronics, South China Normal University, Guangzhou 510006, ChinaMore by Linyuan Mo
- Haipeng LinHaipeng LinInstitute for Advanced Materials and Guangdong Provincial Key Laboratory of Optical Information Materials and Technology, South China Academy of Advanced Optoelectronics, South China Normal University, Guangzhou 510006, ChinaMore by Haipeng Lin
- Meixia LiMeixia LiInstitute for Advanced Materials and Guangdong Provincial Key Laboratory of Optical Information Materials and Technology, South China Academy of Advanced Optoelectronics, South China Normal University, Guangzhou 510006, ChinaMore by Meixia Li
- Wenjie LiWenjie LiInstitute for Advanced Materials and Guangdong Provincial Key Laboratory of Optical Information Materials and Technology, South China Academy of Advanced Optoelectronics, South China Normal University, Guangzhou 510006, ChinaMore by Wenjie Li
- Jiali OuJiali OuInstitute for Advanced Materials and Guangdong Provincial Key Laboratory of Optical Information Materials and Technology, South China Academy of Advanced Optoelectronics, South China Normal University, Guangzhou 510006, ChinaMore by Jiali Ou
- Ruiqiang TaoRuiqiang TaoInstitute for Advanced Materials and Guangdong Provincial Key Laboratory of Optical Information Materials and Technology, South China Academy of Advanced Optoelectronics, South China Normal University, Guangzhou 510006, ChinaMore by Ruiqiang Tao
- Guo TianGuo TianInstitute for Advanced Materials and Guangdong Provincial Key Laboratory of Optical Information Materials and Technology, South China Academy of Advanced Optoelectronics, South China Normal University, Guangzhou 510006, ChinaMore by Guo Tian
- Minghui QinMinghui QinInstitute for Advanced Materials and Guangdong Provincial Key Laboratory of Optical Information Materials and Technology, South China Academy of Advanced Optoelectronics, South China Normal University, Guangzhou 510006, ChinaMore by Minghui Qin
- Min ZengMin ZengInstitute for Advanced Materials and Guangdong Provincial Key Laboratory of Optical Information Materials and Technology, South China Academy of Advanced Optoelectronics, South China Normal University, Guangzhou 510006, ChinaMore by Min Zeng
- Xubing LuXubing LuInstitute for Advanced Materials and Guangdong Provincial Key Laboratory of Optical Information Materials and Technology, South China Academy of Advanced Optoelectronics, South China Normal University, Guangzhou 510006, ChinaMore by Xubing Lu
- Guofu ZhouGuofu ZhouNational Center for International Research on Green Optoelectronics, South China Normal University, Guangzhou 510006, ChinaMore by Guofu Zhou
- Xingsen GaoXingsen GaoInstitute for Advanced Materials and Guangdong Provincial Key Laboratory of Optical Information Materials and Technology, South China Academy of Advanced Optoelectronics, South China Normal University, Guangzhou 510006, ChinaMore by Xingsen Gao
- Jun-Ming LiuJun-Ming LiuInstitute for Advanced Materials and Guangdong Provincial Key Laboratory of Optical Information Materials and Technology, South China Academy of Advanced Optoelectronics, South China Normal University, Guangzhou 510006, ChinaLaboratory of Solid State Microstructures and Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, ChinaMore by Jun-Ming Liu
Abstract
SrFeOx (SFO) offers a topotactic phase transformation between an insulating brownmillerite SrFeO2.5 (BM-SFO) phase and a conductive perovskite SrFeO3 (PV-SFO) phase, making it a competitive candidate for use in resistive memory and neuromorphic computing. However, most of existing SFO-based memristors are nonvolatile devices which struggle to achieve short-term synaptic plasticity (STP). To address this issue and realize STP, we propose to leverage ferroelectric polarization to effectively draw ions across the interface so that the PV-SFO conductive filaments (CFs) can be ruptured in absence of an external field. As a proof of concept, we fabricate ferroelectric Pb(Zr0.2Ti0.8)O3 (PZT)/BM-SFO bilayer films with Au top electrodes and SrRuO3 bottom electrodes. The device exhibits the desired volatile resistive switching behavior, with its low resistance state decaying over time. Such volatility is attributed to the positive polarization charge near the PZT/SFO interface, which can attract the oxygen ions from SFO to PZT and hence lead to the rupture of CFs. Moreover, this volatile device successfully emulates STP-related synaptic functions, including excitatory postsynaptic current, paired-pulse facilitation, learning-experience behavior, associative learning, and reservoir computing. Our study showcases an effective method for achieving volatile resistive switching and STP, which may be applied to various systems beyond SFO-based memristors.
Cited By
This article has not yet been cited by other publications.
Article Views
Altmetric
Citations
Article Views are the COUNTER-compliant sum of full text article downloads since November 2008 (both PDF and HTML) across all institutions and individuals. These metrics are regularly updated to reflect usage leading up to the last few days.
Citations are the number of other articles citing this article, calculated by Crossref and updated daily. Find more information about Crossref citation counts.
The Altmetric Attention Score is a quantitative measure of the attention that a research article has received online. Clicking on the donut icon will load a page at altmetric.com with additional details about the score and the social media presence for the given article. Find more information on the Altmetric Attention Score and how the score is calculated.