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    Research Article

    Chemical Sensing of 2D Graphene/MoS2 Heterostructure device
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    † Department of Advanced Functional Thin Films, Surface Technology Division, Korea Institute of Materials Science (KIMS), 797 Changwondaero, Sungsan-Gu, Changwon, Gyeongnam 642-831, Republic of Korea
    ‡ School of Materials Science and Engineering, Gwangju Institute of Science and Technology (GIST), 261 Cheomdan-gwagiro, Buk-Gu, Gwangju 500-712, Republic of Korea
    § Electrochemistry Department, Surface Technology Division, Korea Institute of Materials Science (KIMS), 797 Changwondaero, Sungsan-Gu, Changwon, Gyeongnam 642-831, Republic of Korea
    *E-mail: [email protected]
    *E-mail: [email protected]
    *E-mail: [email protected]
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    ACS Applied Materials & Interfaces

    Cite this: ACS Appl. Mater. Interfaces 2015, 7, 30, 16775–16780
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    https://doi.org/10.1021/acsami.5b04541
    Published July 10, 2015
    Copyright © 2015 American Chemical Society
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    Abstract

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    We report the production of a two-dimensional (2D) heterostructured gas sensor. The gas-sensing characteristics of exfoliated molybdenum disulfide (MoS2) connected to interdigitated metal electrodes were investigated. The MoS2 flake-based sensor detected a NO2 concentration as low as 1.2 ppm and exhibited excellent gas-sensing stability. Instead of metal electrodes, patterned graphene was used for charge collection in the MoS2-based sensing devices. An equation based on variable resistance terms was used to describe the sensing mechanism of the graphene/MoS2 device. Furthermore, the gas response characteristics of the heterostructured device on a flexible substrate were retained without serious performance degradation, even under mechanical deformation. This novel sensing structure based on a 2D heterostructure promises to provide a simple route to an essential sensing platform for wearable electronics.

    Copyright © 2015 American Chemical Society

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    Supporting Information

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    Fabrication process of Au/Ti/MoS2 device, Vd–Id output characteristics of Au/Ti/MoS2 FET device, operating temperature dependence of transient gas response characteristics in a graphene/MoS2 gas-sensing device, device-to-device variation of transient resistance response characteristics, comparison of sensing properties on each different device structure (Au/Ti/MoS2 vs graphene/MoS2), fabrication process of a graphene/MoS2 gas-sensing device, AFM measurement of graphene/MoS2 contact, bending performance of a graphene/MoS2 device, and long-term stability of a flexible graphene/MoS2 device. The Supporting Information is available free of charge on the ACS Publications website at DOI: 10.1021/acsami.5b04541.

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    Cite this: ACS Appl. Mater. Interfaces 2015, 7, 30, 16775–16780
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