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Enhancing the Memristor Performance through Tuning the Energy Bands of Hexahydroxy-Based Metal–Organic Framework Films

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    Organic Electronic Devices

    Enhancing the Memristor Performance through Tuning the Energy Bands of Hexahydroxy-Based Metal–Organic Framework Films
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    • Jiangyan Yuan
      Jiangyan Yuan
      Tianjin Key Laboratory of Molecular Optoelectronic Sciences & MOE Key Laboratory of Organic Integrated Circuits, Department of Chemistry, School of Science, Tianjin University, Tianjin 300072, China
      More by Jiangyan Yuan
    • Yaru Song
      Yaru Song
      Tianjin Key Laboratory of Molecular Optoelectronic Sciences & MOE Key Laboratory of Organic Integrated Circuits, Department of Chemistry, School of Science, Tianjin University, Tianjin 300072, China
      More by Yaru Song
    • Guangyuan Feng*
      Guangyuan Feng
      Tianjin Key Laboratory of Molecular Optoelectronic Sciences & MOE Key Laboratory of Organic Integrated Circuits, Department of Chemistry, School of Science, Tianjin University, Tianjin 300072, China
      *Email: [email protected]
      More by Guangyuan Feng
    • De juan Fa
      De juan Fa
      Tianjin Key Laboratory of Molecular Optoelectronic Sciences & MOE Key Laboratory of Organic Integrated Circuits, Department of Chemistry, School of Science, Tianjin University, Tianjin 300072, China
      More by De juan Fa
    • Qingqing Luo
      Qingqing Luo
      Tianjin Key Laboratory of Molecular Optoelectronic Sciences & MOE Key Laboratory of Organic Integrated Circuits, Department of Chemistry, School of Science, Tianjin University, Tianjin 300072, China
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    • Enbing Zhang
      Enbing Zhang
      Tianjin Key Laboratory of Molecular Optoelectronic Sciences & MOE Key Laboratory of Organic Integrated Circuits, Department of Chemistry, School of Science, Tianjin University, Tianjin 300072, China
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    • Jie Dong*
      Jie Dong
      College of Chemistry and Chemical Engineering, Henan University of Technology, Zhengzhou 450001, China
      *Email: [email protected]
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    • Shengbin Lei*
      Shengbin Lei
      Tianjin Key Laboratory of Molecular Optoelectronic Sciences & MOE Key Laboratory of Organic Integrated Circuits, Department of Chemistry, School of Science, Tianjin University, Tianjin 300072, China
      *Email: [email protected]
      More by Shengbin Lei
      Orcidhttps://orcid.org/0000-0002-3142-5787
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    ACS Applied Materials & Interfaces

    Cite this: ACS Appl. Mater. Interfaces 2025, 17, 23, 34340–34348
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    https://doi.org/10.1021/acsami.5c06218
    Published June 2, 2025
    Copyright © 2025 American Chemical Society
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    Abstract

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    Precisely adjusting the energy band of metal–organic frameworks (MOFs) in the resistive memory is a useful yet challenging method to manipulate the resistance and ON/OFF ratio of the device. In this study, a series of new MOF films with tunable band structure, high crystallinity, and excellent self-supporting characteristics were obtained by changing different ligands and metal ions. Using these MOF films as active layers, the ITO/2D MOF/Al memory devices exhibit excellent resistive switching behavior: high uniformity and repeatability, excellent durability, and long retention characteristics. Changing the metal ion species or organic ligand molecules can effectively regulate the energy bands of 2D MOF films, so that the device presents an adjustable memory window from 103 to 108, and the memory window of the ITO/Co3(HPTT)2/Al device is as high as 108, higher than those of reported memory devices based on inorganic 2D materials such as traditional chalcogenides and transition metal oxides. The RS mechanism of the device is determined to be the conductive filament formed by the atomic-level displacement of metal ions in the 2D MOF film, and the difference of the set voltage and switching ratio of the device is closely related to the injection barriers of the charge carrier.

    Copyright © 2025 American Chemical Society

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    Supporting Information

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    The Supporting Information is available free of charge at https://pubs.acs.org/doi/10.1021/acsami.5c06218.

    • Characterization of the 2D MOF film (Drop Shape Analysis Contact angle, SEM-EDS, XPS, UV–vis, and CV) and I–V and I–t curve curves of the memristor with the different 2D MOF (PDF)

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    ACS Applied Materials & Interfaces

    Cite this: ACS Appl. Mater. Interfaces 2025, 17, 23, 34340–34348
    Click to copy citationCitation copied!
    https://doi.org/10.1021/acsami.5c06218
    Published June 2, 2025
    Copyright © 2025 American Chemical Society
    Request reuse permissions

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