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    Research Article

    Two-Dimensional Atomic-Layered Alloy Junctions for High-Performance Wearable Chemical Sensor
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    † †Department of Advanced Functional Thin Films, Surface Technology Division and ⊥Electrochemistry Department, Surface Technology Division, Korea Institute of Materials Science, 797 Changwondaero, Sungsan-gu, Changwon, Gyeongnam 51508, Republic of Korea
    ‡ School of Chemical Engineering, Sungkyunkwan University, 300 Cheongcheon-dong, Suwon, Gyeonggi-do 16419, Republic of Korea
    § Jeonju Center, Korea Basic Science Institute, Jeonju, Jeollabuk-do 54907, Republic of Korea
    ∥ School of Materials Science and Engineering, Gwanju Institute of Science and Technology, 261 Cheomdan-gwangiro, Buk-Gu, Gwangju 61005, Republic of Korea
    # Department of Materials Science and Engineering, Inha University, 100 Inharo, Namgu, Incheon 22212, Republic of Korea
    *E-mail: [email protected]. (B.C.)
    *E-mail: [email protected]. (J.N.)
    *E-mail: [email protected]. (M.-G.H.)
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    ACS Applied Materials & Interfaces

    Cite this: ACS Appl. Mater. Interfaces 2016, 8, 30, 19635–19642
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    https://doi.org/10.1021/acsami.6b05943
    Published July 7, 2016
    Copyright © 2016 American Chemical Society
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    Abstract

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    We first report that two-dimensional (2D) metal (NbSe2)–semiconductor (WSe2)-based flexible, wearable, and launderable gas sensors can be prepared through simple one-step chemical vapor deposition of prepatterned WO3 and Nb2O5. Compared to a control device with a Au/WSe2 junction, gas-sensing performance of the 2D NbSe2/WSe2 device was significantly enhanced, which might have resulted from the formation of a NbxW1–xSe2 transition alloy junction lowering the Schottky barrier height. This would make it easier to collect charges of channels induced by molecule adsorption, improving gas response characteristics toward chemical species including NO2 and NH3. 2D NbSe2/WSe2 devices on a flexible substrate provide gas-sensing properties with excellent durability under harsh bending. Furthermore, the device stitched on a T-shirt still performed well even after conventional cleaning with a laundry machine, enabling wearable and launderable chemical sensors. These results could pave a road toward futuristic gas-sensing platforms based on only 2D materials.

    Copyright © 2016 American Chemical Society

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    • XPS spectra, TEM EELS, Raman spectrum, elemental image analysis of transition NbxW1–xSe2 layer. Electrical property of a WSe2 transistor device. Gating effect of NbSe2/WSe2 field-effect transistor sensing device. NO2 gas-sensing properties under different relative humidity condition. Gas-sensing response of NbSe2 metallic film. Energy band diagrams of WSe2-based devices with different junctions. Gas responses of NO2 (5 ppm), N2O, CO, and CO2 (100 ppm) for a flexible NbSe2/WSe2 device. (PDF)

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    Cite this: ACS Appl. Mater. Interfaces 2016, 8, 30, 19635–19642
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