Download Hi-Res ImageDownload to MS-PowerPointCite This:ACS Appl. Mater. Interfaces 2017, 9, 41, 35947-35957

Research ArticleSeptember 27, 2017

Controlling Piezoelectric Responses in Pb(Zr_0.52Ti_0.48)O₃ Films through Deposition Conditions and Nanosheet Buffer Layers on Glass
Click to copy article linkArticle link copied!

View Author Information

Open PDF Supporting Information (1)

ACS Applied Materials & Interfaces

Cite this: ACS Appl. Mater. Interfaces 2017, 9, 41, 35947–35957

Click to copy citationCitation copied!

https://doi.org/10.1021/acsami.7b07428

Published September 27, 2017

Abstract

Click to copy section linkSection link copied!

Nanosheet Ca₂Nb₃O₁₀ (CNOns) layers were deposited on ultralow expansion glass substrates by the Langmuir–Blodgett method to obtain preferential (001)-oriented growth of Pb(Zr_0.52Ti_0.48)O₃ (PZT) thin films using pulsed laser deposition (PLD) to enhance the ferroelectric and piezoelectric properties of the films. The PLD deposition temperature and repetition frequency used for the deposition of the PZT films were found to play a key role in the precise control of the microstructure and therefore of the ferroelectric and piezoelectric properties. A film deposited at a high repetition frequency has a columnar grain structure, which helps to increase the longitudinal piezoelectric coefficient (d_33f). An enhanced d_33f value of 356 pm V^–1 was obtained for 2-μm-thick PZT films on CNOns/glass substrates. This high value is ascribed to the preferential alignment of the crystalline [001] axis normal to the substrate surface and the open columnar structure. Large displacement actuators based on such PZT films grown on CNOns/glass substrates should be useful in smart X-ray optics applications.

Subjects

Keywords

Introduction

Click to copy section linkSection link copied!

Recently there has been an increased demand for high performance piezoelectric and ferroelectric thin films for sensors and actuators, such as the transparent touch panel (1, 2) and adaptive optics for telescopes. (3) For these applications, lead zirconate titanate (PZT) thin films have received much attention because of the strong intrinsic piezoelectric and ferroelectric properties.

In a previous paper we showed that the use of Ca₂Nb₃O₁₀ nanosheets (CNOns) as a seed layer is a promising route for achieving highly (001)-oriented, textured PZT films on Si substrates. (4) The high crystalline quality of the PZT films can significantly improve the performance of envisaged microelectromechanical systems (MEMS) devices. However, the use of Si substrates limits the applications of PZT films for optical and electro-optic applications because Si is not transparent. (5) Similar to Si in the semiconductor industry, transparent glass plays a very important role in optical systems. Especially the very low thermal expansion of ultralow expansion (ULE) glass has made it the material of choice for X-ray optics applications, such as lightweight mirror blanks for astronomical telescopes, interferometry space satellite applications, and extreme UV mirrors for lithography. (6-9)

There have been some studies on the fabrication and optimization of PZT films on glass substrates. In order to fabricate dense and uniform PZT films on such substrates, conductive metal oxide LaNiO₃ (LNO) was developed as a buffer layer. (10) The application of nanosheets as a seed layer on glass substrate has been of great interest for the orientation control of perovskite films. Kikuta et al. (11) and Bayraktar et al. (12) deposited highly (001)-oriented PZT films on glass substrates, using CNOns as a buffer layer. They reported improved ferroelectric and piezoelectric properties in these films. However, the observed piezoelectric coefficients were much lower (∼100 pm V^–1) than those of the respective bulk PZT ceramics (223 pm V^–1), (13) which was explained by the substrate clamping of the film. (14) Recently, Bayraktar et al. (9) observed a very high piezoelectric coefficient (d₃₃ = 250 pm V^–1) in 2-μm-thick PZT films on CNOns/ULE glass, using LaNiO₃ electrodes. This observation is of great interest for smart X-ray optics applications.

The control of the microstructure and orientation of the PZT film is very important for device performance. In film growth processes, the microstructure of a film is usually determined by the nucleation and initial growth phase. The former is mainly controlled by the substrate used, such as crystallinity, surface orientation, and lattice mismatch, while the latter is usually controlled by the process conditions. Therefore, for the complete control of a film microstructure, it is required to understand the effects of both substrate and processing parameters on the nucleation and growth of the film. This eventually will provide ways to improve the device performance. So far there have been many studies on the effect of deposition conditions, such as deposition temperature and deposition pressure, on the microstructure and the ferroelectric and the piezoelectric properties of PZT films prepared by the pulsed laser deposition (PLD) technique. (15-19) It was found that the deposition conditions play an important role in the nucleation and formation of the perovskite phase. (20) For the deposition of PZT films, especially on substrate materials with a low phase transition temperature (e.g., glass), one of the most important problems is the deposition temperature. This temperature not only determines the initial growth of a film, but also its subsequent growth and therefore its microstructure and properties. The most practical MEMS device structures available today are probably piezoelectric MEMS. However, the high process temperature is an obstacle for integration of the MEMS device directly onto a complementary metal-oxide semiconductor (CMOS) device. A CMOS device, especially on a glass substrate, due to its nature, can only withstand a process temperature of at the most 500 °C. The typical crystallization/deposition temperature of PZT films is in the range 550–600 °C for sputtering, (21, 22) and 600–650 °C for sol-gel deposition. (23, 24) With PLD a smooth film surface can be obtained by varying the number of laser pulses per second, keeping the amount of material deposited per shot constant. (25) In that case a lower deposition rate or a longer growth time (a lower laser pulse repetition frequency) for a fixed pulse intensity (laser power density) means that the nuclei have more time to ripen, and one expects the film to evolve into a smooth surface with large, flat areas. (17) However, there are hardly any studies on the effect of laser pulse rate on the growth and properties of PZT films. Guan et al. (17) used a Monte Carlo computational model to study the influence of the pulse rate on the island density and film morphology in the early phase of PLD growth. The computational results indicated that more and smaller sized islands are formed at higher repetition rates, and the reduced island size enhances the diffusion of adatoms resulting in a smoother film surface.

In this paper, we report on the fabrication of 2-μm-thick PZT films using pulsed laser deposition (PLD) with high longitudinal piezo-responses on ULE glass substrates with CNOns buffer layers at deposition temperatures as low as 450 °C. The relationship between the deposition conditions, the microstructural properties, and the piezoelectric properties of in situ PZT films deposited by pulsed laser deposition was investigated. Moreover, the dependence of piezoelectric properties on nanosheet buffer-layer and substrate-type is discussed.

Experimental Section

Click to copy section linkSection link copied!

The concept of growth and control of the growth direction of perovskite layers on nanosheets was introduced by Kikuta et al. (11) and demonstrated with PLD-grown epitaxial films on CNOns and TiOns by Nijland et al. (26) The backbone of CNOns consists of corner-sharing NbO₆ octahedra with a (001) surface plane and a pseudocubic lattice constant of a_p = 3.86 Å. TiOns consists of side-sharing TiO₆ octahedra creating a hexagonal surface plane with in-plane lattice constants a = 3.76 Å and b = 2.97 Å, compatible with (110)-oriented growth of perovskites. The thickness of the nanosheet is a few nanometers.

Synthesis Nanosheets

Ca₂Nb₃O₁₀ (CNOns) and Ti_0.87O₂ (TiOns) nanosheets were fabricated by exfoliation of layered protonated titanate (H_1.07Ti_1.73O₄·H₂O) and protonated calcium niobate (HCa₂Nb₃O₁₀·1.5H₂O) followed by the Langmuir–Blodgett (LB) deposition method. The details of the flux-synthesized, layered precursor K_0.8[Ti_1.73Li_0.27O₄] and the solid state synthesized, layered precursor KCa₂Nb₃O₁₀ and their protonation processes can be found in previous reports. (27-29) The AFM images of a monolayer CNOns on glass and Si substrates as well as on TiOns on glass substrate, are shown in Figure S1 (Supporting Information, SI).

Pulsed Laser Deposition

Pb(Zr_0.52Ti_0.48)O₃ (PZT) thin films with a thickness of about 2-μm (±0.05 μm) were grown on 200 nm-thick LaNiO₃ (LNO) electrode buffered glass, CNOns/glass, TiOns/glass, and CNOns/Si substrates with pulsed laser deposition (PLD) using a KrF excimer laser source (Lambda Physik, 248 nm wavelength). The deposition conditions of the PZT films were laser repetition frequency 10–50 Hz, substrate temperature 450–600 °C, energy density 2.5 J cm^–2, and oxygen pressure 0.1 mbar. The deposition conditions were 4 Hz, 600 °C, 2.5 J cm^–2, and 0.1 mbar O₂ for the LNO electrodes. In the study of the effect of deposition temperature on the properties of PZT films, the LNO electrode was deposited at the same temperature as the PZT film. All layers were deposited successively without breaking the vacuum. After deposition, the films were cooled down to room temperature in a 1 bar oxygen atmosphere at a ramp rate of 8 °C minute^–1.

Analysis and Characterization

The crystal structure of the thin films was analyzed by X-ray diffraction θ–2θ and omega scans (XRD, Philips X’Pert X–ray diffractometer). The surface morphology and microstructure were analyzed using atomic force microscopy (AFM: Bruker Dimension Icon), high-resolution scanning electron microscopy (HRSEM: Zeiss–1550), and high-resolution transmission electron microscopy (TEM, Philips CM300ST–FEG). For electrical measurements, the samples with 200 nm-thick LNO top-electrodes were used. 300 × 300 μm² capacitors were patterned by a standard photolithography process and structured by argon-beam etching of the top-electrodes and wet-etching (HF-HCl solution) of the PZT films (see Figure S2). The polarization hysteresis (P–E) loop measurements were performed with the ferroelectric mode of the aixACCT TF-2000 Analyzer using a triangular ac-electric field of ±200 kV cm^–1 at 1 kHz scanning frequency. The effective piezoelectric small-signal coefficient (d_33f) and large-signal strain (S) of the piezoelectric thin-film capacitors was measured using a double-beam laser interferometer (aixDBLI) method with a minimum resolution of 0.2 pm. The d_33f values were obtained from d_33f–E loops measured at increasing cycling intervals at ±200 kV cm^–1 and 1 kHz frequency.

Results and Discussion

Click to copy section linkSection link copied!

Effect of Deposition Conditions

Two series of samples were fabricated with the aim to modify the microstructure of the PZT films grown on CNOns/glass substrates by varying respectively the PLD deposition temperature at constant PLD laser pulse frequency (T_d = 450, 520, 560, and 600 °C and at 50 Hz) and by varying the laser pulse rate at constant deposition temperature (10, 25, and 50 Hz and with T_d = 600 °C). Notable differences in columnar grain growth and film quality were observed, resulting in changes in the polarization and especially the effective, longitudinal piezoelectric constant (d_33f) of PZT thin film capacitors.

Figure 1a shows the XRD θ–2θ patterns of films deposited at 50 Hz and different substrate temperatures and Figure 1b that of films deposited at 600 °C and varying laser pulse frequency. All PZT films are predominantly (001)-oriented with only minor fractions of (110) and (111) orientations. Note that PZT films with only perovskite phases are obtained even at a deposition temperature as low as 450 °C. This is significantly lower than process temperatures reported in other studies (15, 30, 31) and represents an important advantage for the integration with CMOS devices. The (002) reflection peak of the PZT films was further examined with an X-ray ω-scan (rocking curve), as shown in Figure S3 (SI). The full-width-at-half-maximum (fwhm) values of the PZT films increases only slightly with increasing deposition frequency from 0.52° to 0.67° for 10 and 50 Hz, respectively, and slightly more for deposition temperature decreasing from 600 °C (values in Table 1). Only for the lowest T_d = 450 °C does the fwhm increase somewhat more to 1.08°. A lower fwhm value corresponds to a higher quality PZT film, implying that the grains are more aligned.

Figure 1. XRD θ–2θ scans of 2-μm-thick PZT films grown on LNO/CNOns/glass: (a) T_d of 450, 520, 560, and 600 °C and at 50 Hz and (b) 10, 25, and 50 Hz and with T_d of 600 °C.

Table 1. Properties of PZT Films on Glass, Si, and STO Substrates with CNO and TiO Nanosheets

^{Table a}

Average root-mean-square roughness (R_rms), determined from AFM images in an average over area of 10 × 10 μm².

^{Table b}

Deposition rate (R_av).

^{Table c}

Average grain size (d_col), determined from SEM cross-section.

^{Table d}

Average volume void fraction and average grain spacing calculated as in ref 34 from the measured R_av data, assuming that the (10 Hz, 600 °C)-film is 100% dense.

^{Table e}

On top of nanosheet.

^{Table f}

Film is assumed to be 100% dense.

^{Table g}

Estimated from the average deposition rate and the average grain diameter, following the procedure described in ref 34.

The film morphology and structure were investigated by AFM and cross-sectional SEM as shown in Figure 2. First we discuss the frequency dependence. The film deposited at 600 °C and 10 Hz shows a very dense, structure free film on top of the nanosheets, which is extremely flat. It was shown previously that the observed polycrystalline columnar structure formed along lines arises from the edges of the nanosheets. The average column diameter range from 20 to 30 nm at the bottom to a few 100 nm at the top of the 2-μm-thick film. This structure was ascribed to a different nucleation density and growth at the edges of the nanosheets and the in-plane orientation mismatch of the single crystals grown on top of neighboring nanosheets. The same mechanism was also observed in the PZT films grown on the CNO nanosheets buffered Si substrates, in which the columnar growth was formed on parts of the Si substrate that are not covered by CNO nanosheets. (4) For higher laser frequencies, the structure of the film is columnar (Figure 2b,c). The fine columnar structure on the nanosheet is very similar to the columnar structure off the nanosheets, which makes it impossible to distinguish the two orientations from the SEM images. However, the XRD measurements show approximately the same ratio of (001) and non (001)-oriented growths, suggesting that on the nanosheets the growth is still (001)-oriented. The change from the dense structure to the columnar structure on the nanosheets is attributed to a drastic increase in the nucleation density with increasing laser frequency, due to strongly reduced diffusion time for particles arriving on the film surface. This structural change also has a large effect on the surface roughness. It is only 0.7 nm on top of the nanosheet for the film deposited at 10 Hz and 600 °C. It is only due to the columnar growth at the nanosheet edges that the average root-mean-square roughness (R_rms) is fairly large (27 nm, see also Table 1). The R_rms rapidly increases from 19 to 32 nm for the (25 Hz, 600 °C)-film and (50 Hz, 600 °C)-film, respectively. The increased roughness correlates with the larger average columnar grain diameter (d_col), which translates into a higher pyramidal-shape at the top of the layer and thus larger R_rms.

Figure 2. Surface morphology AFM and cross-sectional SEM images of 2-μm-thick PZT films deposited on LNO/CNOns/glass: (a–c) varying laser frequency and with T_d = 600 °C, (d–g) that same for varying deposition temperature (T_d) and at 50 Hz laser frequency.

Figure 2d–g shows the surface morphology and structure of films deposited at 50 Hz but at different deposition temperature (T_d). With decreasing T_d the average grain diameter decreases gradually from 174 nm for the (50 Hz, 600 °C)-film to 63 nm for the (50 Hz, 450 °C)-film. The decreasing column width with decreasing deposition temperature indicates a decreasing lateral growth rate, due to lower surface mobility after the nucleation phase. The surface roughness suddenly decreases from about 32 nm to about 20 nm, when T_d is decreased from 600 °C to a lower T_d (50 Hz, 560–450 °C)-film. On close examination of the SEM graphs of the top of the grains one can observe a distinct difference between these and the (50 Hz, 560–450 °C)-films. The top of the columns of all films have a pyramidal shape, but the pyramid side surfaces are covered with many small crystallites, smoothing out the sharp features of the pyramidal structure for the latter films. This seems to be the main cause for the sudden reduction in surface roughness with decreasing T_d between 600 and 560 °C. Thus, in this temperature interval the nucleation density on the pyramidal side faces is strongly increased, ascribed to the reduced diffusion length in the short time (20 ms) in between laser pulses at these lower temperatures. The cross-sectional TEM image of the PZT film deposited at 10 Hz (Figure 3a), shows the compact grain or “dense” microstructure in the film on the CNOns and the columnar grain on the CNOns edges and in the uncovered glass areas in between the nanosheets. The cross-sectional TEM image of PZT film deposited at 50 Hz also shows the separated columnar microstructure (Figure 3b).

Figure 3. Cross-sectional TEM images of the 2-μm-thick PZT films grown at (a) 10 Hz and (b) 50 Hz, on LNO/CNO/glass substrates. (C)–(H) SAED patterns taken from the corresponding positions in (a) and (b), respectively.

In a previous paper we described that the columnar grains in films grown along the CNOns edges and in the uncovered Si substrate areas have (110) orientation. (4) Therefore, we assume that also in the present case of PZT growth on CNOns on glass, the minor (110)-oriented fraction is due to the growth on the bare glass substrate and along the CNOns edges. In order to verify the origin of the (110) orientation, selected area electron diffraction (SAED) was used. Figure 3(C–E) are the SAED patterns taken from the corresponding positions in the film deposited at 10 Hz, shown in the cross-sectional TEM image Figure 3a. The SAED patterns at the positions C and D correspond to a (110) in-plane direction therefore the growth at these positions is in the [001] direction. In contrast, the SAED of the columnar grains growing at the edge of the nanosheets (position E) have a (100) in-plane orientation, thus the grain growth is in the [110] direction. Although the columnar grains with (110) growth orientation in the gap between nanosheets are also formed in the films deposited at 50 Hz, these (110) grains are difficult to recognize because the microstructure is very similar to that on the nanosheets with (001) orientation. Figure 3(F–H) show the SAED patterns at three positions in a single column on a nanosheet, showing that the growth direction of this column is along [001].

To investigate the effect of the repetition laser frequency and deposition temperature T_d on the ferroelectric and piezoelectric properties of PZT films, the P–E and d_33f −E hysteresis loops were measured, as shown in Figure 4. The polarization loops for films deposited at 600 °C slightly change by increasing the laser frequency (Figure 4a). The remanent polarization (P_r) of the films deposited at different repetition frequency iesare nearly equal (Table 1), but the slope of the hysteresis loop for increasing applied field increases with decreasing deposition frequency. We think that the value of the remanent polarization and this change in slope are related to a gradual change in the clamping of the grains with laser frequency, but a detailed model that accounts for polarization rotation and extension in relation to more or less clamping to substantiate this is still lacking.

Figure 4. Ferroelectric polarization (*P–E*) and piezoelectric (d_33f–E) hysteresis loops of 2-μm-thick PZT films deposited on LNO/CNOns/glass (a,b) at varying laser frequency and with T_d = 600 °C, and (c,d) the same for varying deposition temperature (T_d) and at 50 Hz laser frequency.

The d_33f values increase with repetition frequency (Figure 4b), which was previously ascribed to increased declamping of the columns in the film deposited at high repetition frequency. The large d_33f values are ascribed to a combination of the intrinsic effect and the extrinsic contribution due to domain switching and polarization rotation. Both intrinsic and extrinsic effects become larger with decreased clamping. (32)

Applying the same analysis as discussed in ref 32, it is found that with higher laser frequency the film becomes less dense and the columnar grains become more separated. From the measured deposition rate per pulse and the column diameter it is estimated that the average void fraction in the film increases from close to 0% for the 10 Hz-film to 23% for the 50 Hz film, while the average separation between grains increases from 0 to 27 nm (Table 1). Consequently the clamping of the PZT grains is strongly reduced, and the grains may to a large extend be considered as unclamped single crystals. The maximum piezoelectric coefficient is even larger than the theoretical value for a single domain, single crystal (327 pm V^–1, Haun et al.). (33) The increased value is ascribed to the extrinsic effect of domain wall motion between different polarization domains. This is supported by phase field simulations that have shown that by that mechanism d_33f values up to 600 pm V^–1 may be possible in unclamped, single crystal PZT with (near-) MPB compositions. (34)

Figure 4b also indicates that for increasing field d_33f rapidly decreases, which in terms of the above explanation implies that the contribution of domain switching and polarization rotation decreases and that the relative contribution of the intrinsic piezoelectric effect becomes larger. Therefore, the d_33f value reaches a peak in the low electric field region and gradually decreases as the higher electric field is applied.

Ferroelectric and piezoelectric properties of PZT thin films have been achieved even at a deposition temperature as low as 450 °C (Figure 4c,d). The polarization decreases with decreasing T_d, but only for the lowest deposition temperature is the remanent polarization decreased significantly (P_r is reduced from about 28 to 19 μC cm^–2) and the loop has become much more slanted. The effect of decreasing T_d on the piezoelectric properties is much stronger: the maximum d_33f value decreases from 356 pm V^–1 at T_d = 600 °C to 200 pm V^–1 at T_d = 450 °C. We attribute both trends to the change in crystallinity and microstructure with decreasing deposition temperature. Although the void fraction does not change significantly with deposition temperature, the average grain diameter does, and with that the average separation between the grains, which monotonically decreases from about 27 to 7 nm for T_d falling from 600 to 450 °C. With decreasing grain separation one may expect that the grains are increasingly connected and then the clamping increases. In general clamping reduces domain wall motion and consequently the extrinsic piezoelectric effect related to domain wall motion, leading to a decrease in the piezoelectric properties. The decrease in the (remanent) polarization at low T_d might be due to the degradation of crystallinity (reflected in an increase of the fwhm with decreasing T_d), decreasing the amount of switchable polarization. For optical applications, the static piezoelectric displacement of PZT film capacitors is very important. Figure 5a shows the displacement profile of a 2 μm PZT thin film capacitor deposited on CNOns/glass at 50 Hz and 600 °C, measured at an applied DC voltage of 10 V, measured with optical white-light interferometry (WLI) . This is very similar to the way such a device may be used in deformable mirrors to control the wavefront in optical systems. The displacement profile along the trace indicated in Figure 5a is shown in Figure 5b. The average piezoelectric coefficient over the 0–10 V voltage range (this corresponds to 0–50 kV cm^–1 applied electric field) is about 440 pm V^–1.

Figure 5. (a) White light interferometer (WLI) measurement and (b) height profile of piezoelectric displacement, of a 2-μm-thick PZT film grown on LNO/CNOns/glass at 50 Hz and 600 °C, measured under a dc-voltage of 10 V.

The strain response of the films was investigated as a function of laser pulse rate. Figure S4 shows the bipolar and unipolar large-signal strain-field hysteresis loops (S–E) for the PZT films grown on CNOns/glass at 600 °C deposition temperature and varying laser frequencies, using a cycle frequency of 1 kHz. Typical butterfly shaped bipolar strain loops are observed. The hysteresis indicates the importance of ferroelectric domain switching and domain wall motion. (32) (This is also reflected by the jump to zero strain at E = 0 kV cm^–1 in the raising branch of the loop. At this point there is a waiting time in the measurement protocol, before the next cycle is started. During this waiting time the strain is relaxed at constant applied field by continuing domain wall motion.) The strain increases with laser frequency and a maximum strain of about 0.78%, at a driving field of +200 kV cm^–1 is obtained for the (50 Hz, 600 °C) film. With increasing strain the slope of the S–E curve decreases, hence the piezoelectric coefficient d_33S(E) = (dS/dE)_E implies a decreasing piezoelectric effect at high fields. The average piezoelectric strain coefficient (d_33S = ΔS/ΔE)) was calculated from the bipolar S–E curve (Figure S4a inset). Table S1 gives the differences in the piezoelectric coefficients measured under the different driving conditions. For the film deposited at 10 Hz, d_33f (0 kV cm^–1), determined from the small-signal or dc-bias d_33f–E hysteresis loop, is about 35% smaller than the large signal value d_33S determined from the S–E loop. This difference is even 44% for the films deposited at 25 and 50 Hz. Such a (large) difference was also reported by Berfield et al. (23) and attributed to a combination of the active mechanisms that contribute to the piezoelectric response and the way to determine d₃₃ for the different driving cases. For the small-signal piezoelectric (d_33f–E) measurement, a low ac-field of 2 kV cm^–1 was applied so that the sample response is linear, but the piezoelectric strain (S–E) measurement was performed under an ac-electric field with an amplitude well above the coercive field of the films. The higher extrinsic contribution from domain wall movement and/or electric-field induced domain switching to the response of strain is thought to be the origin of the much higher d_33S values determined from the S–E curves than the values from the d_33f–E loops. (35) However, there is some variation in the slope at E = 0 of the S–E curves for different maximum applied ac fields, and this may affect the calculated d₃₃ value. (23) Therefore, the small-signal effective piezoelectric coefficient (d_33f) value has been used to compare the piezoelectric properties of PZT grown on different substrates. For actuator applications the maximum achievable strain S_max at maximum applied electric field E_max is the quantity of interest and their ratio S_max/E_max the key figure of merit. Therefore, also the unipolar strain loops of PZT films deposited at different repetition frequencies as a function of unipolar electric field are shown in Figure S4b. The films have a relatively low strain hysteresis (H) of about 6.9–7.5% that slightly decreases above a laser frequency of 25 Hz. Strain hysteresis (related to the piezoelectric loss) was evaluated from the fraction of strain at half-maximum field (see inset in Figure S4b). (36) The high piezoelectric strain and low strain hysteresis obtained in this study expand the possibilities for the application of such PZT films in actuator systems.

Effect of Nanosheet Seed Layers

To demonstrate the advantageous effect of a seed layer of nanosheets on the crystalline and electrical properties of PZT films we compared the properties of 2-μm-thick PZT film deposited at a laser frequency of 50 Hz and 600 °C deposition temperature, directly on LNO/glass and LNO/Ti_0.87O₂ nanosheets on glass (LNO/TiOns/glass) with similar films using LNO/CNOns/glass.

Figure 6 shows the XRD θ–2θ patterns for 2-μm-thick PZT films deposited on LNO/glass, LNO/TiOns/glass, and LNO/CNOns/glass substrates. A predominant (110) orientation (with a minor fraction with (001) orientation) is found for the PZT film on TiOns/glass, while a random orientation is observed for the PZT film deposited on LNO/glass directly. These results indicate that CNOns and TiOns can be utilized to control the orientation of perovskite compounds on glass substrates. The low crystalline quality of the random-oriented PZT film directly grown on glass can also be seen from the large fwhm value of the rocking curve peak (Table 1). The average diameter of the columnar grains in this film is about 192 nm. Note that the columnar grains do not extend from the bottom to the top of the film (Figure 7b) as is the case for the PZT films on LNO/CNOns/glass. In a previous study we have shown that PZT films can be grown on Ti_0.87O₂ nanosheet buffered Si (TiOns/Si) substrates with a columnar structure. (4) Similar to the film grown on TiOns/Si, the film grown on TiOns/glass in this study also has a columnar structure (but more dense and finer than in the case of growth on CNOns/glass) with continuous grains from the bottom electrode to the top of the layer (Figure 7d). The average grain size of about 90 nm in the PZT film on TiOns/glass is much smaller than that on CNOns/glass (174 nm). More information on the grain size and surface roughness of these films is given in Table 1.

Figure 6. XRD θ–2θ patterns of 2-μm-thick PZT films deposited (at 50 Hz and 600 °C) on LNO buffered (a) glass, (b) TiOns/glass, and (c) CNOns/glass.

Figure 7. AFM and cross-sectional SEM images of PZT films deposited (at 50 Hz and 600 °C) on LNO buffered (a,b) glass, (c,d) TiOns/glass, and (e,f) CNOns/glass.

Figure 8 compares the polarization and piezoelectric properties of PZT films deposited on LNO buffered glass, TiOns/glass, and CNOns/glass at 50 Hz and 600 °C. The d_33f value of PZT film on TiOns/glass (215 pm V^–1) is also much lower than that on CNOns/glass (356 pm V^–1). It indicates that not only the columnar structure but also the film orientation affect the piezoelectric coefficient. In this case, when an external electric field is applied along the [001] direction, i.e., perpendicular to the film surface, a large strain is achieved due to extensive non-180° domain switching, (37) and therefore a higher d_33f value is obtained in the (001)-oriented PZT film. The (001)-oriented PZT film has also a larger remanent polarization because the spontaneous polarization is along the [001] crystallographic direction, as shown in Figure 8a and Table 1. Moreover, the low void fraction and thus the strong effect of clamping is also a reason in the low d_33f value in PZT film on TiOns/glass.

Figure 8. (a) *P–E* and (b) small-signal d_33f–E hysteresis loops, of 2-μm-thick PZT films deposited (at 50 Hz and 600 °C) on LNO buffered glass, TiOns/glass, and CNOns/glass.

Effect of Substrate Types

To investigate the effect of substrates on the piezoelectric properties, the 2-μm-thick PZT films with (001) orientation are deposited at 50 Hz and 600 °C on LNO/CNOns/glass, LNO/CNOns/Si, and LNO/SrTiO₃ (STO(001)) substrates. The expected (001) orientation with minor (110) orientation is observed in the PZT films on CNOns/glass and CNOns/Si, while the film on STO is only (001) oriented, as shown in Figure 9. The fwhm value of the PZT(002) rocking curve in the film on CNOns/Si is approximately equal to that of the film on CNOns/glass, while a smaller fwhm value is obtained for the film on STO due to good lattice match and highly in-plane orientation (Table 1).

Figure 9. XRD θ–2θ patterns of 2-μm-thick PZT films deposited (at 50 Hz and 600 °C) on LNO buffered (a) SrTiO₃ (STO, 001), (b) CNOns/Si, and (c) CNOns/glass.

The columnar growth in these films is illustrated in Figure 10, in which the columnar-grain sizes are about 174, 110, and 192 nm, respectively, for the films on CNOns/glass, CNOns/Si, and STO. It is interesting to note that the columnar growth is also obtained in the film on single-crystal STO substrate at high laser frequency (50 Hz) although the average columnar grain size is much larger than in the films on CNOns/glass and CNOns/Si. Also the surface of the film on STO becomes much rougher, reflecting the larger d_col. More details on the grain size and surface roughness are given in Table 1.

Figure 10. AFM and cross-sectional SEM images of 2-μm-thick PZT films deposited (at 50 Hz and 600 °C) on LNO buffered (a,b) STO, (c,d) CNOns/Si, and (e,f) CNOns/glass.

The P–E loops in Figure 11a for the films grown on CNOns/glass and CNOns/Si are very much comparable (although the CNOns/Si device has a slightly larger polarization), but a much higher polarization is observed in the film on STO. We attribute this to the difference in thermal expansion coefficients (TEC) of the substrates, inducing less in-plane tensile strain in PZT on CNOns/Si than that on CNOns/glass, while there is the in-plane compressive strain in PZT on STO, causing increasing polarization out of the film plane (TEC of PZT is 6.0 ppm K^–1, (38-40) Si ≈ 4.4 ppm K^–1, (41) ULE glass ≈ 0 ppm K^–1, (42) and STO ≈ 11.0 ppm K^–1. (43)).

Figure 11. (a) *P–E* and (b) small-signal d_33f–E hysteresis loops, of 2-μm-thick PZT films deposited (at 50 Hz and 600 °C) on LNO buffered STO, CNOns/Si, and CNOns/glass substrates.

Figure 11b shows the piezoelectric d_33f–E loops of PZT/LNO films on CNOns/glass, CNOns/Si, and STO substrates. It was found that the larger d_33f value of the PZT film on CNOns/glass than those on CNOns/Si and STO. For these relatively thin films a large fraction of the clamping is due to the substrate, that is expected to be proportional to the Young’s modulus (Y_s) of the substrate (Y_s = 238 GPa for STO substrate, (44) which is much higher than that of Si (Y_s = 150 GPa) (45) and glass (Y_s = 67.6 GPa) (42) substrates). Thus, one may expect with decreasing Y_s the effective piezoelectric coefficient of the film increases, as is observed.

In the above, we have interpreted the trends in the piezoelectric coefficient (and polarization) in terms of changes in the clamping of the grains in the different films. We have assumed that this clamping decreases with increasing (average) grain separation and decreasing stiffness of the substrate. In Figure 12, the d_33f value is plotted versus the ratio δ/Y_s, where δ is the estimated spacing between the grains in the phyllo and Y_s is the Young’s modulus of the substrate. (46) The graph shows a clear positive correlation between δ/Y_s and d_33f, which holds for these 2-μm-thick PZT films grown on nanosheets buffered different substrates and deposited at different temperatures at 50 Hz deposition frequency, thus with (predominantly) highly oriented growth. The dependence of d_33f of films deposited with varying pulse rate is much weaker but shows the same trend. A clear exception is the film grown directly on glass, which is polycrystalline with different growth orientations. No correlation was found between grain diameter and d_33f (see Figure S5). These results support the assumption that clamping between grains and with the substrate determines to a large extent the extrinsic contribution to the piezoelectric coefficient.

Figure 12. Effective piezoelectric coefficient as a function of the ratio of the grain spacing (δ) in the film and the Young’s modulus (Y_s) of the substrate.

Conclusions

Click to copy section linkSection link copied!

In summary, 2-μm-thick (001)-oriented PZT films with large piezoelectric coefficients were fabricated on glass using CNOns as a seed layer. Films with highly vertically aligned, largely separated columns resulted from using a laser frequency of 50 Hz. Well-developed polarization and piezoelectric hysteresis loops were obtained down to temperatures as low as 450 °C and represents an important advantage for the integration with CMOS devices. The enhanced piezoelectricity of these PZT films was explained in terms of the columnar microstructure that allows for a reduced clamping of the film. The small differences with films grown on ns-buffered Si and STO substrates were attributed to differences in thermal expansion coefficients of the substrates. These films on glass (and Si) with very high piezoelectric coefficient may be used in a wide range of applications, including adjustable X-ray or EUV optics.

Supporting Information

Click to copy section linkSection link copied!

The Supporting Information is available free of charge on the ACS Publications website at DOI: 10.1021/acsami.7b07428.

AFM images of a monolayer Ca₂Nb₃O₁₀ (CNOns) nanosheet deposited on glass and Si, and Ti_0.87O₂ (TiOns) on glass by the Langmuir–Blodgett (LB) method; Flow diagram for etching process of Pb(Zr_0.52Ti_0.48)O₃ (PZT) film capacitors; X-ray rocking curves of PZT films grown on LNO/CNOns/glass substrates: varying deposition temperature and at 50 Hz laser frequency, and varying laser frequency and with deposition temperature of 600 °C; Piezoelectric large-signal butterfly shaped bipolar strain-field (S–E) curves and unipolar strain-field (S–E) loops of the PZT films deposited on CNOns/glass at different repetition frequencies; Measured piezoelectric coefficient (d_33f) for the PZT films deposited on CNOns/glass at different repetition frequencies; Piezoelectric coefficient versus grain diameter; Piezoelectric coefficient (d_33f) as a function of the number of working cycles for PZT films on CNOns/glass, TiOns/glass, CNOns/Si, and STO (PDF)

am7b07428_si_001.pdf (581.9 kb)

Terms & Conditions

Most electronic Supporting Information files are available without a subscription to ACS Web Editions. Such files may be downloaded by article for research use (if there is a public use license linked to the relevant article, that license may permit other uses). Permission may be obtained from ACS for other uses through requests via the RightsLink permission system: http://pubs.acs.org/page/copyright/permissions.html.

Author Information

Click to copy section linkSection link copied!

Corresponding Author
- Minh D. Nguyen - MESA+ Institute for Nanotechnology, University of Twente, P.O. Box 217, 7500AE Enschede, The Netherlands; Solmates B.V., Drienerlolaan 5, 7522NB Enschede, The Netherlands; International Training Institute for Materials Science (ITIMS), Hanoi University of Science and Technology, No. 1 Dai Co Viet Road, Hanoi 10000, Vietnam; http://orcid.org/0000-0001-9725-4004; Email: [email protected]
Authors
- Evert P. Houwman - MESA+ Institute for Nanotechnology, University of Twente, P.O. Box 217, 7500AE Enschede, The Netherlands
- Huiyu Yuan - MESA+ Institute for Nanotechnology, University of Twente, P.O. Box 217, 7500AE Enschede, The Netherlands
- Ben J. Wylie-van Eerd - MESA+ Institute for Nanotechnology, University of Twente, P.O. Box 217, 7500AE Enschede, The Netherlands
- Matthijn Dekkers - Solmates B.V., Drienerlolaan 5, 7522NB Enschede, The Netherlands
- Gertjan Koster - MESA+ Institute for Nanotechnology, University of Twente, P.O. Box 217, 7500AE Enschede, The Netherlands
- Johan E. ten Elshof - MESA+ Institute for Nanotechnology, University of Twente, P.O. Box 217, 7500AE Enschede, The Netherlands; http://orcid.org/0000-0001-7995-6571
- Guus Rijnders - MESA+ Institute for Nanotechnology, University of Twente, P.O. Box 217, 7500AE Enschede, The Netherlands
Author Contributions
M.D.N. and G.R. conceived and designed the experiments. M.D.N. deposited the piezoelectric films; designed and fabricated the device structures; and performed and analyzed the microstructure, ferroelectric, and piezoelectric characterizations. H.Y. made the nanosheets under the supervision of J.E.E. B.J.W.E. measured the deflection of piezoelectric film capacitor by white-light interferometer. M.D.N., E.P.H., and G.R. wrote the paper with the help of the other authors. All authors discussed the results, commented on the manuscript, and gave their approval to the final version of the manuscript.
Notes
The authors declare no competing financial interest.

Acknowledgment

Click to copy section linkSection link copied!

This research was supported by the project number M62.3.10404 in the framework of the Research Program of the Materials innovation institute (M2i) (www.m2i.nl) and by the NanoNextNL—a micro and nanotechnology consortium of the Government of The Netherlands and 130 partners. The authors thank Mr. Mark Smithers for performing the HRSEM experiment and Dr. Rico Keim for the TEM measurement.

References

Click to copy section linkSection link copied!

This article references 46 other publications.

1
Fu, D.; Suzuki, K.; Kato, K.; Suzuki, H. Dynamics of Nanoscale Polarization Backswitching in Tetragonal Lead Zirconate Titanate Thin Film Appl. Phys. Lett. 2003, 82, 2130– 2132 DOI: 10.1063/1.1565502
Google Scholar
1
Dynamics of nanoscale polarization backswitching in tetragonal lead zirconate titanate thin film
Fu, Desheng; Suzuki, Kazuyuki; Kato, Kazumi; Suzuki, Hisao
Applied Physics Letters (2003), 82 (13), 2130-2132CODEN: APPLAB; ISSN:0003-6951. (American Institute of Physics)
The dynamics of polarization backswitching in highly oriented Pb(Zr0.3Ti0.7)O3 (PZT) thin films has been studied in nanoscale using piezoresponse scanning force microscopy (SFM). Our measurements reveal that a SFM-written domain with diam. about 200 nm in PZT films loses its polarization through both the sidewise and forward backswitching. Both of these sidewise and forward domain wall motions follow a stretched exponential law. However, the characteristic time τ of forward backswitching are about ten times of that sidewise motion. The time dependence of sidewise domain wall velocity indicates that there is a time dependence of activation energy of the barrier that domain motions encounter.
>> More from SciFinder ^®
https://chemport.cas.org/services/resolver?origin=ACS&resolution=options&coi=1%3ACAS%3A528%3ADC%252BD3sXisVyktLY%253D&md5=ae327e8fdb268b6528923fafd414b056
2
Yamakawa, K.; Imai, K.; Arisumi, O.; Arikado, T.; Yoshioka, M.; Owada, T.; Okumura, K. Novel Pb(Ti,Zr)O₃ (PZT) Crystallization Technique Using Flash Lamp for Ferroelectric RAM (FeRAM) Embedded LSIs and One Transistor Type FeRAM Devices Jpn. J. Appl. Phys. 2002, 41, 2630– 2634 DOI: 10.1143/JJAP.41.2630
Google Scholar
2
Novel Pb(Ti,Zr)O3 (PZT) crystallization technique using flash lamp for ferroelectric RAM (FeRAM) embedded LSIs and one transistor type FeRAM devices
Yamakawa, Koji; Imai, Keitaro; Arisumi, Osamu; Arikado, Tsunetoshi; Yoshioka, Masaki; Owada, Tatsushi; Okumura, Katsuya
Japanese Journal of Applied Physics, Part 1: Regular Papers, Short Notes & Review Papers (2002), 41 (4B), 2630-2634CODEN: JAPNDE ISSN:. (Japan Society of Applied Physics)
A novel method of ferroelec. capacitor formation for Ferroelec. random access memory (FeRAM) embedded LSIs and 1-transistor-type FeRAMs was developed. Amorphous Pb(Ti,Zr)O3(PZT) films were successfully transformed to the perovskite phase by a flash lamp technique with a crystn. time of 1.2 ms at a substrate temp. of 350°. A flash lamp energy of 27 J/cm2 was sufficient to form a ferroelec. crystal structure due to rapid thermal effects with little heat diffusion in the depth direction. This technique enabled PZT film crystn. in Pt/PZT/Pt structures on multi-Al wiring layers. Granular PZT grains were obsd. on Pt, Ru and RuO2 electrodes, which indicates that crystal growth begins from the film surfaces. Ferroelec. property was verified by the process at 350° max. temp. PZT films were also crystd. directly on SiO2. This is useful for the fabrication of embedded FeRAM devices and 1Tr-type FeRAMs. The flash lamp process has great potential for application to dielec. film formation, annealing processes and so on.
>> More from SciFinder ^®
https://chemport.cas.org/services/resolver?origin=ACS&resolution=options&coi=1%3ACAS%3A528%3ADC%252BD38Xjs1KltLw%253D&md5=a32a95b4267b2df634ca585712720865
3
Yang, E. H.; Hishinuma, Y.; Cheng, J. G.; Trolier-Mckinstry, S.; Bloemhof, E.; Levine, B. M. Thin-Film Piezoelectric Unimorph Actuator-Based Deformable Mirror with a Transferred Silicon Membrane J. Microelectromech. Syst. 2006, 15, 1214– 1225 DOI: 10.1109/JMEMS.2006.880208
Google Scholar
3
Thin-film piezoelectric unimorph actuator-based deformable mirror with a transferred silicon membrane
Yang, Eui-Hyeok; Hishinuma, Yoshikazu; Cheng, Jian-Gong; Trolier-McKinstry, Susan; Bloemhof, Eric; Levine, B. Martin
Journal of Microelectromechanical Systems (2006), 15 (5), 1214-1225CODEN: JMIYET; ISSN:1057-7157. (Institute of Electrical and Electronics Engineers)
A review. This paper describes a proof-of-concept deformable mirror (DM) technol., with a continuous single-crystal Si membrane reflecting surface, based on PbZr0.52Ti0.48O3 (PZT) unimorph membrane microactuators. A potential application for a terrestrial planet tinder adaptive nuller is also discussed. The DM comprises a continuous, large-aperture, Si membrane transferred onto a 20 × 20 piezoelec. unimorph actuator array. The actuator array was prepd. on an electroded Si substrate using chem.-soln.-deposited 2-μm-thick PZT films working in a d31 mode. The substrate was subsequently bulk-micromachined to create membrane structures with residual Si acting as the passive layer in the actuator structure. A math. model simulated the membrane microactuator performance and aided in the optimization of membrane thicknesses and electrode geometries. Excellent agreement was obtained between the model and the exptl. results. The resulting piezoelec. unimorph actuators with patterned PZT films produced large strokes at low voltages. A PZT unimorph actuator, 2.5 mm in diam. with optimized PZT/Si thickness and design showed a deflection of 5.7 μm at 20 V. A DM structure with a 20-μm-thick Si membrane mirror (50 mm × 50 mm area) supported by 400 PZT unimorph actuators was successfully fabricated and optically characterized. The measured max. mirror deflection at 30 V was ∼1 μm. An assembled DM showed an operating frequency bandwidth of 30 kHz and an influence function of ∼30%.
>> More from SciFinder ^®
https://chemport.cas.org/services/resolver?origin=ACS&resolution=options&coi=1%3ACAS%3A528%3ADC%252BD28Xht12rtLnL&md5=1f39855fe10f7bbe0b9f5dc67d80c018
4
Nguyen, M. D.; Yuan, H.; Houwman, E. P.; Dekkers, M.; Koster, G.; ten Elshof, J. E.; Rijnders, G. Highly Oriented Growth of Piezoelectric Thin Films on Silicon Using Two-Dimensional Nanosheets as Growth Template Layer ACS Appl. Mater. Interfaces 2016, 8, 31120– 31127 DOI: 10.1021/acsami.6b09470
Google Scholar
4
Highly Oriented Growth of Piezoelectric Thin Films on Silicon Using Two-Dimensional Nanosheets as Growth Template Layer
Nguyen, Minh D.; Yuan, Huiyu; Houwman, Evert P.; Dekkers, Matthijn; Koster, Gertjan; ten Elshof, Johan E.; Rijnders, Guus
ACS Applied Materials & Interfaces (2016), 8 (45), 31120-31127CODEN: AAMICK; ISSN:1944-8244. (American Chemical Society)
Ca2Nb3O10 (CNOns) and Ti0.87O2 (TiOns) metal oxide nanosheets (ns) are used as a buffer layer for epitaxial growth of piezoelec. capacitor stacks on Si and Pt/Ti/SiO2/Si (Pt/Si) substrates. Highly (001)- and (110)-oriented Pb(Zr0.52Ti0.48)O3 (PZT) films are achieved by utilizing CNOns and TiOns, resp. The piezoelec. capacitors are characterized by polarization and piezoelec. hysteresis loops and by fatigue measurements. The devices fabricated with SrRuO3 top and bottom electrodes directly on nanosheets/Si have ferroelec. and piezoelec. properties well comparable with devices that use more conventional oxide buffer layers (stacks) such as YSZ, CeO2/YSZ, or SrTiO3 on Si. The devices grown on nanosheets/Pt/Si with Pt top electrodes show significantly improved polarization fatigue properties over those of similar devices grown directly on Pt/Si. The differences in properties are ascribed to differences in the cryst. structures and the d. of the films. These results show a route toward the fabrication of single crystal piezoelec. thin films and devices with high quality, long-lifetime piezoelec. capacitor structures on nonperovskite and even noncryst. substrates such as glass or polished metal surfaces.
>> More from SciFinder ^®
https://chemport.cas.org/services/resolver?origin=ACS&resolution=options&coi=1%3ACAS%3A528%3ADC%252BC28XhslCktr%252FO&md5=dbae4e465cc9426f9dc2fb992a559fcc
5
Cheng, T. D.; Zhou, N. J.; Li, P. Ferroelectric and Photoelectricity Properties of (Pb_0.52Zr_0.48)TiO₃ Thin Films Fabricated on FTO Glass Substrate J. Mater. Sci.: Mater. Electron. 2015, 26, 7104– 7108 DOI: 10.1007/s10854-015-3332-5
Google Scholar
5
Ferroelectric and photoelectricity properties of (Pb0.52Zr0.48)TiO3 thin films fabricated on FTO glass substrate
Cheng, Tie Dong; Zhou, Nai Jun; Li, Pei
Journal of Materials Science: Materials in Electronics (2015), 26 (9), 7104-7108CODEN: JSMEEV; ISSN:0957-4522. (Springer)
Perovskite-structure (Pb0.52Zr0.48)TiO3 (PZT) thin films have been fabricated on FTO(SnO2 doping F)-coated glass substrate, in which FTO were used as buffer layer and bottom electrode. The sandwich-structure Au/PZT/FTO capacitors exhibited excellent transmittancy, ferroelec. and leakage properties with the remanent polarization of about 56 μC/cm2 and leakage c.d. of ∼10-5 A/cm2 under 5 V-bias voltage. The Au/PZT/FTO thin films changes significantly with applied DC bias field and has tunability and figure of merit of 88 % and 54 resp. under an applied field of 500 kV/cm.
>> More from SciFinder ^®
https://chemport.cas.org/services/resolver?origin=ACS&resolution=options&coi=1%3ACAS%3A528%3ADC%252BC2MXhtVWjtb7J&md5=7a56d0a57ee0ca869e3915a5a81aa02a
6
Davies, R. Telescopes of the Future Astron. Geophys. 2012, 53, 15– 18 DOI: 10.1111/j.1468-4004.2012.53415.x
Google Scholar
There is no corresponding record for this reference.
7
Favero, I.; Karrai, K. Optomechanics of Deformable Optical Cavities Nat. Photonics 2009, 3, 201– 205 DOI: 10.1038/nphoton.2009.42
Google Scholar
7
Optomechanics of deformable optical cavities
Favero, Ivan; Karrai, Khaled
Nature Photonics (2009), 3 (4), 201-205CODEN: NPAHBY; ISSN:1749-4885. (Nature Publishing Group)
Resonant optical cavities such as Fabry-Perot resonators or whispering-gallery structures are subject to radiation pressure pushing their reflecting 'walls' apart. Deformable optical cavities yield to this pressure, but in doing so they in turn affect the stored optical energy, resulting in an optical back-action. For such cavities the optics and the mechanics become strongly coupled, making them fascinating systems in which to explore theories of measurements at the quantum limit. Here we provide a summary of the current state of optomechanics of deformable optical cavities, identifying some of the most important recent developments in the field.
>> More from SciFinder ^®
https://chemport.cas.org/services/resolver?origin=ACS&resolution=options&coi=1%3ACAS%3A528%3ADC%252BD1MXjslOntLo%253D&md5=d9fce2c6d71f0a9d40a210685a9acc66
8
Savage, N. Adaptive Optics Nat. Photonics 2008, 2, 756– 757 DOI: 10.1038/nphoton.2008.245
Google Scholar
8
Adaptive optics
Savage, Neil
Nature Photonics (2008), 2 (12), 756-757CODEN: NPAHBY; ISSN:1749-4885. (Nature Publishing Group)
The use of deformable mirrors to correct unwanted optical aberrations in real time is helping applications ranging from astronomy to biophotonics and data storage, reports Neil Savage.
>> More from SciFinder ^®
https://chemport.cas.org/services/resolver?origin=ACS&resolution=options&coi=1%3ACAS%3A528%3ADC%252BD1cXhsVentr3E&md5=9838df989a88f309268bf83c13189914
9
Bayraktar, M.; Chopra, A.; Rijnders, G.; Boller, K.; Bijkerk, F. Wavefront Correction in the Extreme Ultraviolet Wavelength Range using Piezoelectric Thin Films Opt. Express 2014, 22, 30623– 30632 DOI: 10.1364/OE.22.030623
Google Scholar
There is no corresponding record for this reference.
10
Choi, J.-J.; Park, G.-T.; Kim, H.-E. Electrooptic Properties of Highly Oriented Pb(Zr,Ti)O₃ Film Grown on Glass Substrate using Lanthanum Nitrate as a Buffer Layer J. Mater. Res. 2004, 19, 3152– 3156 DOI: 10.1557/JMR.2004.0432
Google Scholar
10
Electrooptic properties of highly oriented Pb(Zr,Ti)O3 film grown on glass substrate using lanthanum nitrate as a buffer layer
Choi, Jong-Jin; Park, Gun-Tae; Kim, Hyoun-Ee
Journal of Materials Research (2004), 19 (11), 3152-3156CODEN: JMREEE; ISSN:0884-2914. (Materials Research Society)
Materials with preferred orientation exhibit unique properties that are frequently improved in comparison with those that are randomly oriented. Optical waveguide devices require high-quality single-crystal-like thin films because of their low optical propagation loss and their near-single-crystal properties. The growth mechanisms of textured films on non-lattice matched amorphous substrates, such as glass, are different from those on single-crystal substrates or the surface of a metal electrode. In this study, highly (100) oriented Pb(Zr,Ti)O3 PZT films were grown on an amorphous substrate by means of the sol-gel multicoating method, using lanthanum nitrate as a buffer layer. The lanthanum nitrate buffer layer was also very effective as a diffusion barrier against Pb-Si interdiffusion. The electrooptic properties of the PZT films were markedly enhanced when their orientation was adjusted to the (100) direction.
>> More from SciFinder ^®
https://chemport.cas.org/services/resolver?origin=ACS&resolution=options&coi=1%3ACAS%3A528%3ADC%252BD2cXpvVClur4%253D&md5=7eac233dcd127727b03a1ba698eaa039
11
Kikuta, K.; Noda, K.; Okumura, S.; Yamaguchi, T.; Hirano, S. Orientation Control of Perovskite Thin Films on Glass Substrates by the Application of a Seed Layer Prepared from Oxide Nanosheets J. Sol-Gel Sci. Technol. 2007, 42, 381– 387 DOI: 10.1007/s10971-006-0200-z
Google Scholar
11
Orientation control of perovskite thin films on glass substrates by the application of a seed layer prepared from oxide nanosheets
Kikuta, Koichi; Noda, Koji; Okumura, Shin; Yamaguchi, Toshiaki; Hirano, Shin-Ichi
Journal of Sol-Gel Science and Technology (2007), 42 (3), 381-387CODEN: JSGTEC; ISSN:0928-0707. (Springer)
Orientation control of perovskite compds. was investigated by the application of a seed layer prepd. from oxide nanosheets. An aq. suspension of oxide nanosheets was prepd. by the exfoliation of a layered compd. of KCa2Nb3O10 oxide grains. A seed layer composed of (TBA)Ca2Nb3O10 nanosheets (TBA = tetrabutylammonium) was formed on a glass substrate by simply dip coating it in the suspension. Two kinds of perovskite compds., LaNiO3 (LNO) and Pb(Zr,Ti)O3 (PZT) with a preferred orientation of (00l) were successfully grown on this seeded glass substrate. In this study, the relation between lattice mismatch and elec. properties is investigated. A large, oriented PZT film with a size of 5 × 4 cm shows an improved P-E hysteresis behavior by use of this orientation control.
>> More from SciFinder ^®
https://chemport.cas.org/services/resolver?origin=ACS&resolution=options&coi=1%3ACAS%3A528%3ADC%252BD2sXksFSjtbs%253D&md5=35920bfb4ff94ab68292692b6aa49fb6
12
Bayraktar, M.; Chopra, A.; Bijkerk, F.; Rijnders, G. Nanosheet Controlled Epitaxial Growth of PbZr_0.52Ti_0.48O₃ Thin Films on Glass Substrates Appl. Phys. Lett. 2014, 105, 132904 DOI: 10.1063/1.4896991
Google Scholar
There is no corresponding record for this reference.
13
Jaffe, B.; Cook, W. R., Jr.; Jaffe, H. Piezoelectric Ceramics; Academic Press Inc.: London, 1971.
Google Scholar
There is no corresponding record for this reference.
14
Trolier-McKinstry, S.; Muralt, P. Thin Film Piezoelectrics for MEMS J. Electroceram. 2004, 12, 7– 17 DOI: 10.1023/B:JECR.0000033998.72845.51
Google Scholar
14
Thin Film Piezoelectrics for MEMS
Trolier-McKinstry, S.; Muralt, P.
Journal of Electroceramics (2004), 12 (1/2), 7-17CODEN: JOELFJ; ISSN:1385-3449. (Kluwer Academic Publishers)
A review. Thin film piezoelec. materials offer a no. of advantages in microelectromech. systems (MEMS), due to the large motions that can be generated, often with low hysteresis, the high available energy densities, as well as high sensitivity sensors with wide dynamic ranges, and low power requirements. This paper reviews the literature in this field, with an emphasis on the factors that impact the magnitude of the available piezoelec. response. For non-ferroelec. piezoelecs. such as ZnO and AlN, the importance of film orientation is discussed. The high available elec. resistivity in AlN, its compatibility with CMOS processing, and its high frequency const. make it esp. attractive in resonator applications. The higher piezoelec. response available in ferroelec. films enables lower voltage operation of actuators, as well as high sensitivity sensors. Among ferroelec. films, the majority of the MEMS sensors and actuators developed have utilized lead zirconate titanate (PZT) films as the transducer. Randomly oriented PZT films show piezoelec. e31,f coeffs. of about -7 C/m2 at the morphotropic phase boundary. In PZT films, orientation, compn., grain size, defect chem., and mech. boundary conditions all impact the obsd. piezoelec. coeffs. The highest achievable piezoelec. responses can be obsd. in {001} oriented rhombohedrally-distorted perovskites. For a variety of such films, e31,f coeffs. of -12 to -27 C/m2 have been reported.
>> More from SciFinder ^®
https://chemport.cas.org/services/resolver?origin=ACS&resolution=options&coi=1%3ACAS%3A528%3ADC%252BD2cXlsVWns70%253D&md5=29efcf3e3b9e2a883d87b09b9cec199a
15
Horwitz, J. S.; Grabowski, K. S.; Chrisey, D. B.; Leuchtner, R. E. Insitu Deposition of Epitaxial PbZr_xTi_(1–x)O₃ Thin Films by Pulsed Laser Deposition Appl. Phys. Lett. 1991, 59, 1565– 1567 DOI: 10.1063/1.106284
Google Scholar
There is no corresponding record for this reference.
16
Galca, A. C.; Stancu, V.; Husanu, M. A.; Dragoi, C.; Gheorghe, N. G.; Trupina, L.; Enculescu, M.; Vasile, E. Substrate–Target Distance Dependence of Structural and Optical Properties in Case of Pb(Zr,Ti)O₃ Films Obtained by Pulsed Laser Deposition Appl. Surf. Sci. 2011, 257, 5938– 5943 DOI: 10.1016/j.apsusc.2011.01.056
Google Scholar
There is no corresponding record for this reference.
17
Guan, L.; Zhang, D. M.; Li, X.; Li, Z. H. Role of Pulse Repetition Rate in Film Growth of Pulsed Laser Deposition Nucl. Instrum. Methods Phys. Res., Sect. B 2008, 266, 57– 62 DOI: 10.1016/j.nimb.2007.10.011
Google Scholar
17
Role of pulse repetition rate in film growth of pulsed laser deposition
Guan, Li; Zhang, DuanMing; Li, Xu; Li, ZhiHua
Nuclear Instruments & Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms (2008), 266 (1), 57-62CODEN: NIMBEU; ISSN:0168-583X. (Elsevier B.V.)
Pulse repetition rate plays an important role in pulsed laser deposition (PLD) technique. A kinetic Monte Carlo technique was used to simulate the early stage of films growth in PLD process. The simulation result displays that island d. depend on pulse repetition rate. At a low pulse repetition rate, there is such a longer pulse interval that islands are given more time to ripen. Thus the total of island d. reduces and film aggregation tends to compact shape. In contrast, island d. will increase with pulse frequency, and islands may be in dispersed or dendritic mode. Duty cycle, i.e., deposition time can effect on islands aggregation to a certain extent. We also find that a different logarithm scaling behavior exists during PLD film growth, which indicate that island d. at different pulse repetition rates obeys a general scaling function different from the previous scaling form. The crossover effects of pulse frequency and incident intensity have been discussed. Some obtained results have been compared with exptl. data.
>> More from SciFinder ^®
https://chemport.cas.org/services/resolver?origin=ACS&resolution=options&coi=1%3ACAS%3A528%3ADC%252BD1cXit1ejuw%253D%253D&md5=9c9f4fa2ca9e7bcf6a5b7bc72dab3022
18
Tyunina, M.; Leppävuori, S. Effects of Laser Fluence, Size, and Shape of the Laser Focal Spot in Pulsed Laser Deposition using a Multielemental Target J. Appl. Phys. 2000, 87, 8132– 8142 DOI: 10.1063/1.373508
Google Scholar
18
Effects of laser fluence, size, and shape of the laser focal spot in pulsed laser deposition using a multielemental target
Tyunina, M.; Leppavuori, S.
Journal of Applied Physics (2000), 87 (11), 8132-8142CODEN: JAPIAU; ISSN:0021-8979. (American Institute of Physics)
Two-dimensional distributions of thickness and of compn. of the deposit produced by the room temp. pulsed laser ablation of lead zirconate titanate in vacuum were studied exptl. as a function of laser fluence, of size, and of elongation of the rectangular laser focal spot. The flip over and the elliptical shape of the deposit were obsd. Increase in laser fluence, increase in elongation, and decrease in size of the spot resulted in a stronger broadening of the thickness profiles. The deposit was lead deficient, with the lead profiles "inverse" to the thickness profiles. Excess and/or nominal content of zirconium and of titanium were obsd. with the profiles resembling those of the thickness. The thickness profiles were in general formal agreement with the model of adiabatic expansion of the monoelemental plume. An addnl. broadening of the profiles was ascribed to the spatial distribution of the compn. in the deposit. The behavior of the compn. was qual. analyzed in terms of sorption of ablated species at the substrate. Good agreement between exptl. observations and the conclusions of the sorption anal. suggests a detg. role of the plume-substrate interaction in the deposition process.
>> More from SciFinder ^®
https://chemport.cas.org/services/resolver?origin=ACS&resolution=options&coi=1%3ACAS%3A528%3ADC%252BD3cXjtl2nsrk%253D&md5=1dc14b529b39feb14b02e5ef61410df9
19
Zhu, T. J.; Lu, L.; Lai, M. O. Pulsed Laser Deposition of Lead-Zirconate-Titanate Thin Films and Multilayered Heterostructures Appl. Phys. A: Mater. Sci. Process. 2005, 81, 701– 714 DOI: 10.1007/s00339-005-3227-z
Google Scholar
19
Pulsed laser deposition of lead-zirconate-titanate thin films and multilayered heterostructures
Zhu, T. J.; Lu, L.; Lai, M. O.
Applied Physics A: Materials Science & Processing (2005), 81 (4), 701-714CODEN: APAMFC; ISSN:0947-8396. (Springer GmbH)
A review. There is an increasing interest in PZT based ferroelec. thin film and devices in recent years. Pulsed laser deposition (PLD) technique was demonstrated to be a versatile and successful tool for the deposition of epitaxial multi-component metal oxide films and heterostructures. This review presents a reasonable understanding of the relationship between PLD processing and compn., crystal structure and orientation of PZT ferroelec. thin films, and heterostructures. Processing-related issues from PLD of PZT thin films and material-integration strategies developed to fabrication of highly oriented or epitaxial PZT thin film based capacitors with excellent ferroelec. properties are discussed in detail.
>> More from SciFinder ^®
https://chemport.cas.org/services/resolver?origin=ACS&resolution=options&coi=1%3ACAS%3A528%3ADC%252BD2MXlvVSgsLk%253D&md5=bd4144ce4034e4b0d1bb1fae4a7d7abf
20
Blank, D. H. A.; Dekkers, M.; Rijnders, G. Pulsed Laser Deposition in Twente: from Research Tool towards Industrial Deposition J. Phys. D: Appl. Phys. 2014, 47, 034006 DOI: 10.1088/0022-3727/47/3/034006
Google Scholar
20
Pulsed laser deposition in Twente: from research tool towards industrial deposition
Blank, Dave H. A.; Dekkers, Matthijn; Rijnders, Guus
Journal of Physics D: Applied Physics (2014), 47 (3), 034006CODEN: JPAPBE; ISSN:0022-3727. (IOP Publishing Ltd.)
A review. After the discovery of the perovskite high Tc superconductors in 1986, a rare and almost unknown deposition technique attracted attention. Pulsed laser deposition (PLD), or laser ablation as it was called in the beginning, became popular because of the possibility to deposit complex materials, like perovskites, as thin film. By introducing in situ diagnostics and control of the laser fluence, PLD became a technique for several exptl. studies of diverse complex materials. Nowadays, first steps towards industrial applications of PLD thin films on large wafers, up to 200 mm, are underway. In this paper we give a brief overview of the progress that PLD has made in our research group in Twente. Starting with control of deposition parameters, via in situ diagnostics with RHEED and ending with the latest development in equipment for large-area deposition.
>> More from SciFinder ^®
https://chemport.cas.org/services/resolver?origin=ACS&resolution=options&coi=1%3ACAS%3A528%3ADC%252BC2cXktFWmtL0%253D&md5=ec8556fcfa9e4e8331385e0d68105519
21
Leufke, P. M.; Kruk, R.; Wang, D.; Kübel, C.; Hahn, H. Ferroelectric vs. Structural Properties of Large-Distance Sputtered Epitaxial LSMO/PZT Heterostructures AIP Adv. 2012, 2, 032184 DOI: 10.1063/1.4756997
Google Scholar
21
Ferroelectric vs. structural properties of large-distance sputtered epitaxial LSMO/PZT heterostructures
Leufke, Philipp M.; Kruk, Robert; Wang, Di; Kuebel, Christian; Hahn, Horst
AIP Advances (2012), 2 (3), 032184, 12 pp.CODEN: AAIDBI; ISSN:2158-3226. (American Institute of Physics)
We report on large-distance rf-magnetron sputtering as a competitive alternative to pulsed laser deposition and off-axis sputtering for the growth of epitaxial PbZr0.52Ti0.48O3 (PZT) thin films. To det. the characteristics of the PZT films, the studies were focused on the interplay between microstructural and ferroelec. properties. The films were deposited on insulating or conducting (Nb-doped) SrTiO3 and MgO substrates with La0.83Sr0.17MnO3 as bottom electrode. The uniformity and homogeneity of the samples was demonstrated by using large area (1.0 mm2) top electrodes. It is shown that epitaxial heterostructures of excellent cryst. and ferroelec. quality can be deposited from a stoichiometric PZT target without the need for excess PbO in the target or post-annealing of the samples. (c) 2012 American Institute of Physics.
>> More from SciFinder ^®
https://chemport.cas.org/services/resolver?origin=ACS&resolution=options&coi=1%3ACAS%3A528%3ADC%252BC3sXhtlKmtrfO&md5=7b7cf58bab694bbf29c69f18be500b0a
22
Jacobsen, H.; Prume, K.; Wagner, B.; Ortner, K.; Jung, T. High-Rate Sputtering of Thick PZT Thin Films for MEMS J. Electroceram. 2010, 25, 198– 202 DOI: 10.1007/s10832-010-9615-6
Google Scholar
22
High-rate sputtering of thick PZT thin films for MEMS
Jacobsen, Harald; Prume, Klaus; Wagner, Bernhard; Ortner, Kai; Jung, Thomas
Journal of Electroceramics (2010), 25 (2-4), 198-202CODEN: JOELFJ; ISSN:1385-3449. (Springer)
Crack and void free polycryst. Lead Zirconate Titanate (PZT) thin films in the range of 5 μm to 10 μm have been successfully deposited on silicon substrates using a novel high rate sputtering process. The sputtered PZT layers show a high dielec. const. εr between 1,000 and 1,800 with a moderate dissipation factor tan (δ) = 0,002 - 0,01 measured at f = 1 kHz, a distinct ferroelec. hysteresis loop with a remanent polarization of 17 μC/cm2 and coercive field strength of 5.4 kV/mm. The piezoelec. coeffs. d33,f = 80 pm/V are measured by using a Double Beam Laser Interferometer (DBLI). Based on this deposition process a membrane actuator mainly consisting of a SOI layer and a sputtered PZT thin film was prepd. The deflection of this membrane actuator depending on the driving voltage was measured with a white light interferometer and compared to the results of finite element anal. (FEA). With this approach a transverse piezoelec. coeff. of about e31 = -11.2 C/m2 was calcd., whereas all the other material parameters in the model were lent from PZT-5A.
>> More from SciFinder ^®
https://chemport.cas.org/services/resolver?origin=ACS&resolution=options&coi=1%3ACAS%3A528%3ADC%252BC3cXht12qtLvL&md5=fba176d8ae734d43b22b4fde3befc1ca
23
Berfield, T. A.; Ong, R. J.; Payne, D. A.; Sottos, N. R. Residual Stress Effects on Piezoelectric Response of Sol-Gel Derived Lead Zirconate Titanate Thin Films J. Appl. Phys. 2007, 101, 024102 DOI: 10.1063/1.2422778
Google Scholar
23
Residual stress effects on piezoelectric response of sol-gel derived lead zirconate titanate thin films
Berfield, T. A.; Ong, R. J.; Payne, D. A.; Sottos, N. R.
Journal of Applied Physics (2007), 101 (2), 024102/1-024102/7CODEN: JAPIAU; ISSN:0021-8979. (American Institute of Physics)
Piezoelec. properties of three sol-gel derived Pb(Zr0.53Ti0.47)O3 thin film specimens of different thicknesses integrated onto Pt/Ti/SiO2‖Si substrates are investigated to delineate the influence of residual stress on the strain-field response characteristics from other thickness related effects. Residual tensile stresses are detd. from wafer curvature measurements for films ranging in thickness from 190 to 500 nm. Field-induced strains are measured interferometrically for each film under either a large ac driving voltage or a small ac ripple applied over a range of dc biases. Higher residual stresses decrease measured piezoelec. response, while thickness variations with no accompanying change in residual stress state produce little change in strain-field behavior. The diminished performance assocd. with high residual stresses is attributed to redns. in both linear and nonlinear contributions, including decreased polarization switching and domain motion.
>> More from SciFinder ^®
https://chemport.cas.org/services/resolver?origin=ACS&resolution=options&coi=1%3ACAS%3A528%3ADC%252BD2sXhtlCrs7c%253D&md5=0c2ca215a8c2b36c7b9902e02dbd795b
24
Wang, G. S.; Rémiens, D.; Soyer, C. Combined Annealing Temperature and Thickness Effects on Properties of PbZr_0.53Ti_0.47O₃ Films on LaNiO₃/Si Substrate by Sol–Gel Process J. Cryst. Growth 2006, 293, 370– 375 DOI: 10.1016/j.jcrysgro.2006.06.014
Google Scholar
24
Combined annealing temperature and thickness effects on properties of PbZr0.53Ti0.47O3 films on LaNiO3/Si substrate by sol-gel process
Wang, G. S.; Remiens, D.; Soyer, C.
Journal of Crystal Growth (2006), 293 (2), 370-375CODEN: JCRGAE; ISSN:0022-0248. (Elsevier B.V.)
PbZr0.53Ti0.47O3 (PZT) films with different thickness were deposited on LaNiO3-coated Si substrate by modified sol-gel process. The thickness effect on structure and properties of PZT films annealed at different temp. have been investigated. Single perovskite-phase PZT films with preferred [100] orientation and denser columnar structure were obtained, when annealed at a lower temp. of 600 °C, whereas a higher annealing temp. of 700 °C resulted in [110] preferred orientation and porous structure. The dielec. and ferroelec. properties of PZT films annealed at different temp. were evaluated systemically as a function of thickness, and the dielec. and ferroelec. properties of PZT films were found to greatly depend on both thickness and annealing temp.
>> More from SciFinder ^®
https://chemport.cas.org/services/resolver?origin=ACS&resolution=options&coi=1%3ACAS%3A528%3ADC%252BD28XnsFyrs7o%253D&md5=784cecd7494ef25142317287b714e94e
25
Dale, D.; Fleet, A.; Suzuki, Y.; Brock, J. D. X-ray Scattering from Real Surfaces: Discrete and Continuous Components of Roughness Phys. Rev. B: Condens. Matter Mater. Phys. 2006, 74, 085419 DOI: 10.1103/PhysRevB.74.085419
Google Scholar
There is no corresponding record for this reference.
26
Nijland, M.; Kumar, S.; Lubbers, R.; Blank, D. H. A.; Rijnders, G.; Koster, G.; ten Elshof, J. E. Local Control over Nucleation of Epitaxial Thin Films by Seed Layers of Inorganic Nanosheets ACS Appl. Mater. Interfaces 2014, 6, 2777– 2785 DOI: 10.1021/am4052624
Google Scholar
26
Local Control over Nucleation of Epitaxial Thin Films by Seed Layers of Inorganic Nanosheets
Nijland, Maarten; Kumar, Suresh; Lubbers, Roy; Blank, Dave H. A.; Rijnders, Guus; Koster, Gertjan; ten Elshof, Johan E.
ACS Applied Materials & Interfaces (2014), 6 (4), 2777-2785CODEN: AAMICK; ISSN:1944-8244. (American Chemical Society)
Nanosheets of Ti0.87O2 and Ca2Nb3O10 were synthesized and transferred onto Si substrates by Langmuir-Blodgett deposition. Using pulsed laser deposition, SrRuO3 films were formed on top of these samples. The underlying nanosheets detd. both the morphol. and crystallog. orientation of the films. SrRuO3 grew preferentially in the [110]pc direction on Ti0.87O2 nanosheets, while growth proceeded in the [001]pc direction on Ca2Nb3O10 nanosheets (pc refers to the pseudocubic unit cell of SrRuO3). Besides macroscopic control over the out-of-plane crystal direction, single crystal orientations were measured by electron backscatter diffraction on the level of individual nanosheets, indicating that epitaxial growth was achieved on the nanosheets as imposed by their well-defined crystal lattices. The nanosheets also had a clear effect on the magnetic properties of the films, which showed anisotropic behavior only when a seed layer was used. A monolayer consisting of a mixt. of both types of nanosheets was made to locally control the nucleation of SrRuO3. In this context, SrRuO3 was used as model material, as it was used to illustrate that nanosheets can be a unique tool to control the orientation of films on a (sub-)micrometer length scale. This concept may pave the way to the deposition of various other functional materials and the fabrication of devices where the properties are controlled locally by the different crystallog. orientations.
>> More from SciFinder ^®
https://chemport.cas.org/services/resolver?origin=ACS&resolution=options&coi=1%3ACAS%3A528%3ADC%252BC2cXht12mt70%253D&md5=cf1dfde933d8ea24156287cf3f4920c5
27
Shibata, T.; Takano, H.; Ebina, Y.; Kim, D. S.; Ozawa, T. C.; Akatsuka, K.; Ohnishi, T.; Takada, K.; Kogure, T.; Sasaki, T. Versatile van der Waals Epitaxy-Like Growth of Crystal Films using Two-Dimensional Nanosheets as a Seed Layer: Orientation Tuning of SrTiO₃ Films along Three Important Axes on Glass Substrates J. Mater. Chem. C 2014, 2, 441– 449 DOI: 10.1039/C3TC31787K
Google Scholar
27
Versatile van der Waals epitaxy-like growth of crystal films using two-dimensional nanosheets as a seed layer: orientation tuning of SrTiO3 films along three important axes on glass substrates
Shibata, Tatsuo; Takano, Hikaru; Ebina, Yasuo; Kim, Dae Sung; Ozawa, Tadashi C.; Akatsuka, Kosho; Ohnishi, Tsuyoshi; Takada, Kazunori; Kogure, Toshihiro; Sasaki, Takayoshi
Journal of Materials Chemistry C: Materials for Optical and Electronic Devices (2014), 2 (3), 441-449CODEN: JMCCCX; ISSN:2050-7534. (Royal Society of Chemistry)
One of the basic requirements for attaining a good epitaxy is a close structural matching between a substrate and a growing crystal epilayer. This restrictive requirement causes a major obstacle for its wide application to a range of functional crystal films in electronic, magnetic or optical devices. One approach for overcoming this problem is the so-called van der Waals epitaxy (VDWE) method, which can effectively implement the epitaxy of various crystals on cleaved faces of layered materials having no dangling bonds. The weak adatom-substrate interaction without directional covalent bonding plays a crucial role in the initial stage of VDWE, which drastically relaxes the lattice matching limitation. However, the method requires special materials for use as a substrate, thereby meaning that its applicability is limited. The concept is extended to the two-dimensional (2D) lattice of inorg. nanosheets, which are molecularly thin 2-dimensional crystals produced via artificial exfoliation of layered metal oxides. The nanosheets can neatly cover the surface of conventional substrates such as glass via a facile soln.-based process. Similar to the above-mentioned cleaved faces of layered materials, such substrates can promote VDWE-like crystal growth because of their dangling bond-free nature. Based on this principle, the authors demonstrated a selective deposition of highly textured (100), (110) and (111) SrTiO3 films, a fundamentally important archetype of functional crystals, on glass substrates covered with single-layer nanosheets with suitable 2-dimensional periodicities as a trigger for VDWE-like film growth. The rich varieties of nanosheet structures and their facile deposition onto almost any kinds of substrates provide a significant advantage, expanding potential applications for a range of devices based on functional crystal films.
>> More from SciFinder ^®
https://chemport.cas.org/services/resolver?origin=ACS&resolution=options&coi=1%3ACAS%3A528%3ADC%252BC3sXhvFegs7vP&md5=8362ae76a260532dc5af1108ed4ecbb5
28
Yuan, H.; Lubbers, R.; Besselink, R.; Nijland, M.; ten Elshof, J. E. Improved Langmuir–Blodgett Titanate Films via in Situ Exfoliation Study and Optimization of Deposition Parameters ACS Appl. Mater. Interfaces 2014, 6, 8567– 8574 DOI: 10.1021/am501380d
Google Scholar
28
Improved Langmuir-Blodgett Titanate Films via in Situ Exfoliation Study and Optimization of Deposition Parameters
Yuan, Huiyu; Lubbers, Roy; Besselink, Rogier; Nijland, Maarten; ten Elshof, Johan E.
ACS Applied Materials & Interfaces (2014), 6 (11), 8567-8574CODEN: AAMICK; ISSN:1944-8244. (American Chemical Society)
The exfoliation and deposition of large (10-100 μm) Ti0.87O2 and small (0.1-1 μm) Ti0.91O2 nanosheets from lepidocrocite-type protonated titanates was investigated for getting high quality films. Exfoliation was carried out with different tetra-alkyl ammonium ions (TAA+) and varying TAA+/H+ ratios, and the colloidal solns. were characterized by small-angle X-ray scattering (SAXS) and UV-visible (UV-vis) spectroscopy. Using Langmuir-Blodgett deposition, the titanate nanosheets were directly transferred onto a Si substrate. The resulting films were characterized by at. force microscopy (AFM). The results indicate that the H1.07Ti1.73O4 titanate exfoliated at very low ratios of TAA+/H+; no lower threshold for exfoliation was obsd. for the TAA+ concn. Nanosheets exfoliated at very low ratios of TAA+/H+ typically showed a small size and porous surface. Subsequent exfoliation of the remaining layered titanate particles yielded much higher quality nanosheets. The optimized deposition parameters for Langmuir-Blodgett films suggest that the surface pressure is a key parameter to control the coverage of the film. The bulk concn. of nanosheets was found to be a less important deposition parameter in the LB deposition process. It only influenced whether the desired surface pressure could be reached at a given max. degree of compression.
>> More from SciFinder ^®
https://chemport.cas.org/services/resolver?origin=ACS&resolution=options&coi=1%3ACAS%3A528%3ADC%252BC2cXnvV2isLo%253D&md5=807301510f69460a563a9e1e9d2ca857
29
Yuan, H.; Nguyen, M.; Hammer, T.; Koster, G.; Rijnders, G.; ten Elshof, J. E. Synthesis of KCa₂Nb₃O₁₀ Crystals with Varying Grain Sizes and Their Nanosheet Monolayer Films as Seed Layers for PiezoMEMS Applications ACS Appl. Mater. Interfaces 2015, 7, 27473– 27478 DOI: 10.1021/acsami.5b09456
Google Scholar
29
Synthesis of KCa2Nb3O10 Crystals with Varying Grain Sizes and Their Nanosheet Monolayer Films As Seed Layers for PiezoMEMS Applications
Yuan, Huiyu; Nguyen, Minh; Hammer, Tom; Koster, Gertjan; Rijnders, Guus; ten Elshof, Johan E.
ACS Applied Materials & Interfaces (2015), 7 (49), 27473-27478CODEN: AAMICK; ISSN:1944-8244. (American Chemical Society)
The layered perovskite-type niobate KCa2Nb3O10 and its derivs. show advantages in several fields, such as templated film growth and (photo)catalysis. Conventional synthesis routes generally yield crystal size smaller than 2 μm. We report a flux synthesis method to obtain KCa2Nb3O10 crystals with significantly larger sizes. By using different flux materials (K2SO4 and K2MoO4), crystals with av. sizes of 8 and 20 μm, resp., were obtained. The KCa2Nb3O10 crystals from K2SO4 and K2MoO4 assisted synthesis were protonated and exfoliated into monolayer nanosheets, and the optimal exfoliation conditions were detd. Using pulsed laser deposition, highly (001)-oriented piezoelec. stacks (SrRuO3/PbZr0.52Ti0.48O3/SrRuO3, SRO/PZT/SRO) were deposited onto Langmuir-Blodgett films of Ca2Nb3O10- (CNO) nanosheets with varying lateral nanosheet sizes on Si substrates. The resulting PZT thin films showed high crystallinity irresp. of nanosheet size. The small sized nanosheets yielded a high longitudinal piezoelec. coeff. d33 of 100 pm/V, while the larger sized sheets had a d33 of 72 pm/V. An enhanced transverse piezoelec. coeff. d31 of -107 pm/V, an important input parameter for the actuation of active structures in microelectromech. systems (MEMS) devices, was obtained for PZT films grown on CNO nanosheets with large lateral size, while the corresponding value on small sized sheets was -96 pm/V.
>> More from SciFinder ^®
https://chemport.cas.org/services/resolver?origin=ACS&resolution=options&coi=1%3ACAS%3A528%3ADC%252BC2MXhvVOrtrbP&md5=9ac7258c54c2dfc1433dbdba457e7d36
30
Pham, M. T. N.; Boukamp, B. A.; Rijnders, G.; Bouwmeester, H. J. M.; Blank, D. H. A. Pulsed Laser Deposition of PZT/Pt Composite Thin Films with High Dielectric Constants Appl. Phys. A: Mater. Sci. Process. 2004, 79, 907– 910 DOI: 10.1007/s00339-004-2822-8
Google Scholar
30
Pulsed laser deposition of PZT/Pt composite thin films with high dielectric constants
Pham, M. T. N.; Boukamp, B. A.; Rijnders, G.; Bouwmeester, H. J. M.; Blank, D. H. A.
Applied Physics A: Materials Science & Processing (2004), 79 (4-6), 907-910CODEN: APAMFC; ISSN:0947-8396. (Springer-Verlag)
PbZr0.53Ti0.47O3 (PZT) thin films contg. nanoparticles of Pt (3-10 nm) were produced using pulsed laser deposition (PLD). The Pt content can be tuned by varying the energy d. of the laser beam. Phase and microstructure anal. of the thin films was performed using XRD, SEM, TEM and AFM. The elec. properties were investigated by C-V and I-V measurements. The effective dielec. const. of the composite films increased substantially through the Pt dispersion. These films are promising candidates, for instance, for high-d. dynamic random access memory (DRAM) devices.
>> More from SciFinder ^®
https://chemport.cas.org/services/resolver?origin=ACS&resolution=options&coi=1%3ACAS%3A528%3ADC%252BD2cXlslCnsbo%253D&md5=00b81ec29c8b66b78880315226a0218a
31
Ramesh, R.; Inam, A.; Chan, W. K.; Tillerot, F.; Wilkens, B.; Chang, C. C.; Sands, T.; Tarascon, J. M.; Keramidas, V. G. Ferroelectric PbZr_0.2Ti_0.8O₃ Thin Films on Epitaxial Y-Ba-Cu-O Appl. Phys. Lett. 1991, 59, 3542– 3544 DOI: 10.1063/1.105651
Google Scholar
There is no corresponding record for this reference.
32
Nguyen, M. D.; Houwman, E. P.; Dekkers, M.; Rijnders, G. Strongly Enhanced Piezoelectric Response in Lead Zirconate Titanate Films with Vertically Aligned Columnar Grains ACS Appl. Mater. Interfaces 2017, 9, 9849– 9861 DOI: 10.1021/acsami.6b16470
Google Scholar
32
Strongly Enhanced Piezoelectric Response in Lead Zirconate Titanate Films with Vertically Aligned Columnar Grains
Nguyen, Minh D.; Houwman, Evert P.; Dekkers, Matthijn; Rijnders, Guus
ACS Applied Materials & Interfaces (2017), 9 (11), 9849-9861CODEN: AAMICK; ISSN:1944-8244. (American Chemical Society)
Pb(Zr0.52Ti0.48)O3 (PZT) films with (001) orientation were deposited on Pt(111)/Ti/SiO2/Si(100) substrates using pulsed laser deposition. Variation of the laser pulse rate during the deposition of the PZT films was found to play a key role in the control of the microstructure and to change strongly the piezoelec. response of the thin film. The film deposited at low pulse rate has a denser columnar microstructure, which improves the transverse piezoelec. coeff. (d31f) and ferroelec. remanent polarization (Pr), whereas the less densely packed columnar grains in the film deposited at high pulse rates give rise to a significantly higher longitudinal piezoelec. coeff. (d33f) value. The effect of film thickness on the ferroelec. and piezoelec. properties of the PZT films was also studied. With increasing film thickness, the grain column diam. gradually increases, and also the av. Pr and d33f values become larger. The largest piezoelec. coeff. of d33f = 408 pm V-1 was found for a 4-μm film thickness. From films in the thickness range 0.5-5 μm, the z-position dependence of the piezoelec. coeff. could be deduced. A local max. value of 600 pm V-1 was deduced in the 3.5-4.5 μm section of the thickest films. The dependence of the film properties on film thickness is attributed to the decreasing effect of the clamping constraint imposed by the substrate and the increasing spatial sepn. between the grains with increasing film thickness.
>> More from SciFinder ^®
https://chemport.cas.org/services/resolver?origin=ACS&resolution=options&coi=1%3ACAS%3A528%3ADC%252BC2sXjsFCksbc%253D&md5=7cef470c18b52779793574c14b0b9979
33
Haun, M. J.; Furman, E.; Jang, S. J.; Cross, L. E. Thermodynamic Theory of the Lead Zirconate-Titanate Solid Solution System, Part V: Theoretical Calculations Ferroelectrics 1989, 99, 63– 86 DOI: 10.1080/00150198908221440
Google Scholar
There is no corresponding record for this reference.
34
Cao, Y.; Sheng, G.; Zhang, J. X.; Choudhury, S.; Li, Y. L.; Randall, C. A.; Chen, L. Q. Piezoelectric Response of Single-Crystal PbZr_1–xTi_xO₃ near Morphotropic Phase Boundary Predicted by Phase-Field Simulation Appl. Phys. Lett. 2010, 97, 252904 DOI: 10.1063/1.3530443
Google Scholar
There is no corresponding record for this reference.
35
Yao, F. Z.; Yu, Q.; Wang, K.; Li, Q.; Li, J. F. Ferroelectric Domain Morphology and Temperature-Dependent Piezoelectricity of (K,Na,Li)(Nb,Ta,Sb)O₃ Lead-Free Piezoceramics RSC Adv. 2014, 4, 20062– 20068 DOI: 10.1039/C4RA01697A
Google Scholar
35
Ferroelectric domain morphology and temperature-dependent piezoelectricity of (K,Na,Li)(Nb,Ta,Sb)O3 lead-free piezoceramics
Yao, Fang-Zhou; Yu, Qi; Wang, Ke; Li, Qi; Li, Jing-Feng
RSC Advances (2014), 4 (39), 20062-20068CODEN: RSCACL; ISSN:2046-2069. (Royal Society of Chemistry)
Domain morphol. and temp.-dependent piezoelectricity in terms of piezoelec. coeff. d33 and normalized strain d33* of (K,Na,Li)(Nb,Ta,Sb)O3 lead-free piezoceramics at the polymorphic phase boundary were investigated. Transmission electron microscopy (TEM) and piezoresponse force microscopy (PFM) studies revealed a characteristic domain morphol. comprising strip-like domains and featureless domains. Moreover, a facile method based on the field-dependent piezoelec. coeff. d33(E) measurement was verified to characterize in situ temp. dependence of piezoelec. coeff. d33, as an alternative for the conventional ex situ route. It was demonstrated that the normalized strain d33* exhibits superior thermal resistance to piezoelec. coeff. d33, though both parameters are susceptible to temp. variation.
>> More from SciFinder ^®
https://chemport.cas.org/services/resolver?origin=ACS&resolution=options&coi=1%3ACAS%3A528%3ADC%252BC2cXotVCiu7o%253D&md5=40af2af98c65f148e314f58b0ccf5b59
36
Tang, H.; Zhang, S.; Feng, Y.; Li, F.; Shrout, T. R. Piezoelectric Property and Strain Behavior of Pb(Yb_0.5Nb_0.5)O₃–PbHfO₃–PbTiO₃ Polycrystalline Ceramics J. Am. Ceram. Soc. 2013, 96, 2857– 2863 DOI: 10.1111/jace.12389
Google Scholar
36
Piezoelectric Property and Strain Behavior of Pb(Yb0.5Nb0.5)O3-PbHfO3-PbTiO3 Polycrystalline Ceramics
Tang, Hua; Zhang, Shujun; Feng, Yujun; Li, Fei; Shrout, Thomas R.
Journal of the American Ceramic Society (2013), 96 (9), 2857-2863CODEN: JACTAW; ISSN:0002-7820. (Wiley-Blackwell)
(1-X)Pb(Hf1-yTiy)O3-xPb(Yb0.5Nb0.5)O3 (x = 0.10-0.44, y = 0.55-0.80) ceramics were fabricated. The morphotropic phase boundary (MPB) of the ternary system was detd. by X-ray powder diffraction. The optimum dielec. and piezoelec. properties were achieved in 0.8Pb(Hf0.4Ti0.6)O3-0.2Pb(Yb0.5Nb0.5)O3 ceramics with MPB compn., where the dielec. permittivity εr, piezoelec. coeff. d33, planar electromech. coupling kp, and Curie temp. Tc were found to be on the order of 1930,480 pC/N, 62%, and 360°C, resp. The unipolar strain behavior was evaluated as a function of applied elec. field up to 50 kV/cm to investigate the strain nonlinearity and domain wall motion under large drive field, where the high field piezoelec. d33* was found to be 620 pm/V for 0.82Pb(Hf0.4Ti0.6)O3-0.18Pb(Yb0.5Nb0.5)O3. In addn., Rayleigh anal. was carried out to study the extrinsic contribution, where the value was found to be in the range 2-18%.
>> More from SciFinder ^®
https://chemport.cas.org/services/resolver?origin=ACS&resolution=options&coi=1%3ACAS%3A528%3ADC%252BC3sXhsVektLrJ&md5=42765e1c2a2df56192f660e542ea1a00
37
Zhang, J. X.; Sheng, G.; Chen, L. Q. Large Electric Field Induced Strains in Ferroelectric Islands Appl. Phys. Lett. 2010, 96, 132901 DOI: 10.1063/1.3373915
Google Scholar
There is no corresponding record for this reference.
38
Wang, J.; Zheng, H.; Ma, Z.; Prasertchoung, S.; Wuttig, M.; Droopad, R.; Yu, J.; Eisenbeiser, K.; Ramesh, R. Epitaxial BiFeO₃ Thin Films on Si Appl. Phys. Lett. 2004, 85, 2574– 2576 DOI: 10.1063/1.1799234
Google Scholar
38
Epitaxial BiFeO3 thin films on Si
Wang, J.; Zheng, H.; Ma, Z.; Prasertchoung, S.; Wuttig, M.; Droopad, R.; Yu, J.; Eisenbeiser, K.; Ramesh, R.
Applied Physics Letters (2004), 85 (13), 2574-2576CODEN: APPLAB; ISSN:0003-6951. (American Institute of Physics)
BiFeO3 was studied as an alternative environmentally clean ferro/piezoelec. material. 200-nm-thick BiFeO3 films were grown on Si substrates with SrTiO3 as a template layer and SrRuO3 as bottom electrode. X-ray diffraction and TEM studies confirmed the epitaxial growth of the films. The spontaneous polarization of the films was ∼45 μC/cm2. Retention measurement up to several days showed no decay of polarization. A piezoelec. coeff. (d33) of ∼60 pm/V was obsd., which is promising for applications in micro-electro-mech. systems and actuators.
>> More from SciFinder ^®
https://chemport.cas.org/services/resolver?origin=ACS&resolution=options&coi=1%3ACAS%3A528%3ADC%252BD2cXotVKnsLs%253D&md5=c44eaf0e2dfd41e97b3128497e27cafd
39
Yang, S. Y.; Zavaliche, F.; Mohaddes-Ardabili, L.; Vaithyanathan, V.; Schlom, D. G.; Lee, Y. J.; Chu, Y. H.; Cruz, M. P.; Zhan, Q.; Zhao, T.; Ramesh, R. Metalorganic Chemical Vapor Deposition of Lead-Free Ferroelectric BiFeO₃ Films for Memory Applications Appl. Phys. Lett. 2005, 87, 102903 DOI: 10.1063/1.2041830
Google Scholar
39
Metalloorganic chemical vapor deposition of lead-free ferroelectric BiFeO3 films for memory applications
Yang, S. Y.; Zavaliche, F.; Mohaddes-Ardabili, L.; Vaithyanathan, V.; Schlom, D. G.; Lee, Y. J.; Chu, Y. H.; Cruz, M. P.; Zhan, Q.; Zhao, T.; Ramesh, R.
Applied Physics Letters (2005), 87 (10), 102903/1-102903/3CODEN: APPLAB; ISSN:0003-6951. (American Institute of Physics)
We have grown BiFeO3 thin films on SrRuO3/SrTiO3 and SrRuO3/SrTiO3/Si using liq. delivery MOCVD. Epitaxial BiFeO3 films were successfully prepd. through the systematic control of the chem. reaction and deposition process. We found that the film compn. and phase equil. are sensitive to the Bi:Fe ratio in the precursor. Fe-rich mixts. show the existence of α-Fe2O3, while Bi-rich mixts. show the presence of β-Bi2O3 as a 2nd phase at the surface. In the optimized films, we were able to obtain an epitaxial single perovskite phase thin film. Elec. measurements using both quasistatic hysteresis and pulsed polarization measurements confirm the existence of ferroelectricity with a switched polarization of 110-120 μC/cm2, ΔP(=P*-P). Out-of plane piezoelec. (d33) measurements using an at. force microscope yield a value of 50-60 pm/V.
>> More from SciFinder ^®
https://chemport.cas.org/services/resolver?origin=ACS&resolution=options&coi=1%3ACAS%3A528%3ADC%252BD2MXpvFCmtbw%253D&md5=44dc8ca47e336bc3b43d1afdc17ab0c9
40
Kurihara, K.; Kondo, M.; Sato, K.; Ishii, M.; Wakiya, N.; Shinozaki, K. Electrooptic Properties of Epitaxial Lead Zirconate Titanate Films on Silicon Substrates Jpn. J. Appl. Phys. 2007, 46, 6929– 6932 DOI: 10.1143/JJAP.46.6929
Google Scholar
40
Electrooptic properties of epitaxial lead zirconate titanate films on silicon substrates
Kurihara, Kazuaki; Kondo, Masao; Sato, Keisuke; Ishii, Masatoshi; Wakiya, Naoki; Shinozaki, Kazuo
Japanese Journal of Applied Physics, Part 1: Regular Papers, Brief Communications & Review Papers (2007), 46 (10B), 6929-6932CODEN: JAPNDE; ISSN:0021-4922. (Institute of Pure and Applied Physics)
Electrooptic (EO) properties and propagation losses of the lead zirconate titanate (PZT) films grown on Si substrates were studied. PZT films were prepd. on Si substrates by chem. soln. method. Refractive index changes and propagation losses of PZT films were evaluated by prism coupling method. A (100)-oriented 8.9-μm-thick epitaxial PZT film grown on a Si substrate with Sr Ru oxide/ceria/yttria-stabilized zirconia (SRO/CeO2/YSZ) epitaxial buffer layer has large EO effect and very low propagation loss. Propagation of an IR light with a wavelength of 1550 nm into a PZT film on Si substrate was successfully confirmed.
>> More from SciFinder ^®
https://chemport.cas.org/services/resolver?origin=ACS&resolution=options&coi=1%3ACAS%3A528%3ADC%252BD2sXhtlSkt7bE&md5=668bd91e5b0024832c71b890144271be
41
Wang, G. S.; Rémiens, D.; Dogheche, E.; Dong, X. L. Effect of Thermal Strain on Structure and Polarization Fatigue of CSD-Derived PbZr_0.53Ti_0.47O₃/LaNiO₃ hetero-Structures Appl. Phys. A: Mater. Sci. Process. 2007, 88, 657– 660 DOI: 10.1007/s00339-007-4022-9
Google Scholar
41
Effect of thermal strain on structure and polarization fatigue of CSD-derived PbZr0.53Ti0.47O3/LaNiO3 hetero-structures
Wang, G. S.; Remiens, D.; Dogheche, E.; Dong, X. L.
Applied Physics A: Materials Science & Processing (2007), 88 (4), 657-660CODEN: APAMFC; ISSN:0947-8396. (Springer)
PbZr0.53Ti0.47O3/LaNiO3 (PZT/LNO) hetero-structures have been successfully deposited on MgO, SrTiO3, Al2O3 and Si substrate by chem. soln. routes, resp. The X-ray diffraction measurements show that out-of-plane lattice parameters of PZT increase as increase of thermal expansion coeff. of substrate. Polarization fatigues of Pt/PZT/LNO capacitors are strongly affected by the thermal strain caused by difference of thermal expansion coeff. between PZT and substrate materials. High fatigue resistance of Pt/PZT/LNO can be obtained by using substrate with similar thermal expansion coeff. as PZT.
>> More from SciFinder ^®
https://chemport.cas.org/services/resolver?origin=ACS&resolution=options&coi=1%3ACAS%3A528%3ADC%252BD2sXnsVantrg%253D&md5=885958a3b00a3174a21004f2bb528328
42
http://www.sydor.com/wp-content/uploads/Corning-ULE-7972-Low-Expansion-Glass.pdf.
Google Scholar
There is no corresponding record for this reference.
43
Kawashima, J.; Yamada, Y.; Hirabayashi, I. Critical Thickness and Effective Thermal Expansion Coefficient of YBCO Crystalline Film Phys. C 1998, 306, 114– 118 DOI: 10.1016/S0921-4534(98)00350-5
Google Scholar
43
Critical thickness and effective thermal expansion coefficient of YBCO crystalline film
Kawashima, Junichi; Yamada, Yasuji; Hirabayashi, Izumi
Physica C: Superconductivity (Amsterdam) (1998), 306 (1&2), 114-118CODEN: PHYCE6; ISSN:0921-4534. (Elsevier Science B.V.)
Crit. thickness for crack formation has been detd. for the YBCO cryst. film deposited on the SrTiO3 (STO) substrate by the liq. phase epitaxial (LPE) method. As-prepd. films, even more than 4 μm in thickness, have no visible cracks, while oxygen-annealed films show apparent crack propagation depending on the film thickness, leading to the estn. of crit. thickness of about 1.35 μm. Films formed on MgO buffered STO substrates have almost the same crit. thickness. The effective thermal expansion coeff. of YBCO cryst. film has been deduced to be 13.4×10-6/K by considering thermal expansion of the substrate and the YBCO film, which causes internal tensile stress and crack formation in the film.
>> More from SciFinder ^®
https://chemport.cas.org/services/resolver?origin=ACS&resolution=options&coi=1%3ACAS%3A528%3ADyaK1cXmtl2qu7c%253D&md5=567c17fae0bb03dbb062e5a2e8e4ebf5
44
Paufler, P.; Bergk, B.; Reibold, M.; Belger, A.; Pätzke, N.; Meyer, D. C. Why is SrTiO₃ Much Stronger at Nanometer than at Centimeter Scale? Solid State Sci. 2006, 8, 782– 792 DOI: 10.1016/j.solidstatesciences.2006.04.005
Google Scholar
44
Why is SrTiO3 much stronger at nanometer than at centimeter scale?
Paufler, Peter; Bergk, Beate; Reibold, Marianne; Belger, Andre; Paetzke, Nora; Meyer, Dirk C.
Solid State Sciences (2006), 8 (7), 782-792CODEN: SSSCFJ; ISSN:1293-2558. (Elsevier B.V.)
Nanoindentation of (100), (110) and (111) oriented SrTiO3 single crystals at room temp. led to the appearance of slip bands and simultaneously to discontinuities in the force-penetration curve. Combining both enabled a crit. shear stress of the order of 10 GPa to be evaluated which indicates the onset of dislocation generation. Transmission electron microscopy proved that dislocations were nucleated underneath the indenter. The difference between macroscopically and nanoscopically stressed vols. arises due to the availability of mobile dislocations in the former case and due a lack of such dislocations in the latter.
>> More from SciFinder ^®
https://chemport.cas.org/services/resolver?origin=ACS&resolution=options&coi=1%3ACAS%3A528%3ADC%252BD28XlvF2qtr8%253D&md5=95fe6fb43a5a2e91d1c3c527cdaf6082
45
Lee, J.-W.; Choi, J.-J.; Park, G.-T.; Park, C.-S.; Kim, H.-E. Thick Pb(Zr,Ti)O₃ Films Fabricated by Inducing Residual Compressive Stress during the Annealing Process J. Mater. Res. 2005, 20, 2898– 2901 DOI: 10.1557/JMR.2005.0383
Google Scholar
45
Thick Pb(Zr,Ti)O3 films fabricated by inducing residual compressive stress during the annealing process
Lee, Jae-Wung; Choi, Jong-Jin; Park, Gun-Tae; Park, Chee-Sung; Kim, Hyoun-Ee
Journal of Materials Research (2005), 20 (11), 2898-2901CODEN: JMREEE; ISSN:0884-2914. (Materials Research Society)
The effects of residual stress induced during the annealing process on the microstructural evolution and elec. properties of Pb(Zr,Ti)O3 (PZT) films were studied. PZT films were deposited on platinized silicon substrates by the radio frequency magnetron sputtering method using a single oxide target. Compressive stress was induced in the film by bending the silicon substrate during sputtering using a specially designed substrate holder and subsequently annealing the film without the holder. Without the residual stress, the PZT film was severely cracked when it was thicker than 2 μm due to the thermal expansion mismatch between the PZT and the Si substrate. However, when the residual stress was applied, no cracks were detected in the film for thicknesses of up to 4 μm. The suppression of crack formation was attributed to the residual compressive stress that compensated for the tensile stress generated during and/or after the annealing process. The elec. properties of the PZT film with the residual stress were improved compared to those of the PZT film without the residual stress.
>> More from SciFinder ^®
https://chemport.cas.org/services/resolver?origin=ACS&resolution=options&coi=1%3ACAS%3A528%3ADC%252BD2MXht1Slt7%252FL&md5=b7d37dcfa2b64a05a208c606e01caccc
46
A more detailed model of the clamping may provide a more accurate relation between d_33f, grain separation, and the effect of substrate clamping. One expects that for increasing film thickness, the effect of substrate clamping is relatively smaller compared to the effect of the grain separation. This is indeed observed ref 32. Here the film thickness is constant. The strong effect of the pulse rate suggests that the relative effect of substrate induced clamping compared to grain-to-grain clamping becomes larger for higher pulse rate, resulting in denser films (lower void fraction) in combination with larger diameter grains. This appears to be have assumed the most simple linear dependence.
There is no corresponding record for this reference.

Cited By

Click to copy section linkSection link copied!

Explore this article's citation statements on scite.ai

This article is cited by 27 publications.

Philip Lucke, Mohammadreza Nematollahi, Muharrem Bayraktar, Andrey E. Yakshin, Johan E. ten Elshof, Fred Bijkerk. Influence of the Template Layer on the Structure and Ferroelectric Properties of PbZr0.52Ti0.48O3 Films. ACS Omega 2022, 7 (26) , 22210-22220. https://doi.org/10.1021/acsomega.2c00815
Alexis Boileau, Marie Dallocchio, Florent Baudouin, Adrian David, Ulrike Lüders, Bernard Mercey, Alain Pautrat, Valérie Demange, Maryline Guilloux-Viry, Wilfrid Prellier, Arnaud Fouchet. Textured Manganite Films Anywhere. ACS Applied Materials & Interfaces 2019, 11 (40) , 37302-37312. https://doi.org/10.1021/acsami.9b12209
Moritz Nunnenkamp, Daniela Perez, Mark Smithers, Evert Houwman, Guus Rijnders, Gertjan Koster. Using a perovskite oxide buffer layer on Ca2Nb3O10 nanosheets for the epitaxial growth of Pb(Zr0.52Ti0.48)O3 for electrode-free thin films. Thin Solid Films 2024, 790 , 140190. https://doi.org/10.1016/j.tsf.2023.140190
Xianwei Wang, Fei Yang, Kexin Yu, Bihui Zhang, Jingyao Chen, Yujia Shi, Peifan Yang, Lifang He, Haonan Li, Rui Liu, Xiaofang Li, Yanchun Hu, Jun Shang, Shaoqian Yin. PbZrO 3 ‐Based Anti‐Ferroelectric Thin Films for High‐Performance Energy Storage: A Review. Advanced Materials Technologies 2023, 8 (10) https://doi.org/10.1002/admt.202202044
J.J. Manguele, F. Baudouin, C. Cibert, B. Domengès, V. Demange, M. Guilloux-Viry, A. Fouchet, G. Poullain. Orientation control of Platinum electrode grown on silicon using [Ca2Nb3O10]− nanosheets as seed layer.. Thin Solid Films 2023, 765 , 139640. https://doi.org/10.1016/j.tsf.2022.139640
Evert P. Houwman, Luuk Okkerman, Minh T. Do, Gertjan Koster, Guus Rijnders. Interface-induced effects on the polarization response of epitaxial ferroelectric thin films—an experimental study and theoretical analysis. 2022, 137-155. https://doi.org/10.1016/B978-0-08-102945-9.00001-0
Kun Zhu, Baijie Song, Guanglong Ge, JinFeng Lin, Fei Yan, Liuxue Xu, Hao Yan, Bo Shen, Jiwei Zhai, Xiujian Chou. Construction of multi-domain coexistence enhanced piezoelectric properties of Bi0.5Na0.5TiO3-based thin films. Journal of the European Ceramic Society 2021, 41 (13) , 6456-6464. https://doi.org/10.1016/j.jeurceramsoc.2021.05.050
Gang Nie, Yu Yao, Xiaoguang Duan, Ling Xiao, Shaobin Wang. Advances of piezoelectric nanomaterials for applications in advanced oxidation technologies. Current Opinion in Chemical Engineering 2021, 33 , 100693. https://doi.org/10.1016/j.coche.2021.100693
Zakhar Vakulov, Daniil Khakhulin, Evgeny Zamburg, Alexander Mikhaylichenko, Vladimir A. Smirnov, Roman Tominov, Viktor S. Klimin, Oleg A. Ageev. Towards Scalable Large-Area Pulsed Laser Deposition. Materials 2021, 14 (17) , 4854. https://doi.org/10.3390/ma14174854
N. T. Ngoc, G. Agnus, S. Matzen, T. Maroutian, D. T. Huong Giang, P. Lecoeur. Cantilever magnetoelectric PZT/Tb–Fe–Co resonators for magnetic sensing applications. APL Materials 2021, 9 (4) https://doi.org/10.1063/5.0042379
Matjaž Spreitzer, Dejan Klement, Tjaša Parkelj Potočnik, Urška Trstenjak, Zoran Jovanović, Minh Duc Nguyen, Huiyu Yuan, Johan Evert ten Elshof, Evert Houwman, Gertjan Koster, Guus Rijnders, Jean Fompeyrine, Lior Kornblum, David P. Fenning, Yunting Liang, Wen-Yi Tong, Philippe Ghosez. Epitaxial ferroelectric oxides on silicon with perspectives for future device applications. APL Materials 2021, 9 (4) https://doi.org/10.1063/5.0039161
Floriana Craciun, Thomas Lippert, Maria Dinescu. Pulsed Laser Deposition: Fundamentals, Applications, and Perspectives. 2021, 1291-1323. https://doi.org/10.1007/978-3-030-63647-0_27
Kun Zhu, Shuanghao Wu, Baijie Song, Guanglong Ge, Yunjing Shi, Liuxue Xu, Hao Yan, Bo Shen, Jiwei Zhai. Multi-domain BNiT modification enhanced the piezoelectric properties of BNT-based lead-free thin films. Journal of Materials Chemistry C 2020, 8 (47) , 17114-17121. https://doi.org/10.1039/D0TC04217J
Ruichao Liu, Bo Feng, Yachao Ma, Hao Liu, Junyan Cui, Daoyuan Yang, Huiyu Yuan. Synthesis of layered-perovskite KCa2Nan-3NbnO3n+1 with different layer thickness. Materials Letters 2020, 281 , 128635. https://doi.org/10.1016/j.matlet.2020.128635
Willemijn M. Luiten, Verena M. van der Werf, Noureen Raza, Rebecca Saive. Investigation of the dynamic properties of on-chip coupled piezo/photodiodes by time-resolved atomic force and Kelvin probe microscopy. AIP Advances 2020, 10 (10) https://doi.org/10.1063/5.0028481
Juliette Cardoletti, Philipp Komissinskiy, Enrico Bruder, Carl Morandi, Lambert Alff. {001}-textured Pb(Zr, Ti)O3 thin films on stainless steel by pulsed laser deposition. Journal of Applied Physics 2020, 128 (10) https://doi.org/10.1063/5.0019967
J. J. Manguele, F. Baudouin, C. Cibert, B. Domengès, V. Demange, M. Guilloux-Viry, A. Fouchet, G. Poullain. Highly textured Pt thin film grown at very low temperature using Ca2Nb3O10 nanosheets as seed layer. SN Applied Sciences 2020, 2 (3) https://doi.org/10.1007/s42452-020-2271-9
Minh D. Nguyen, Guus Rijnders. Comparative study of piezoelectric response and energy-storage performance in normal ferroelectric, antiferroelectric and relaxor-ferroelectric thin films. Thin Solid Films 2020, 697 , 137843. https://doi.org/10.1016/j.tsf.2020.137843
Floriana Craciun, Thomas Lippert, Maria Dinescu. Pulsed Laser Deposition: Fundamentals, Applications, and Perspectives. 2020, 1-33. https://doi.org/10.1007/978-3-319-69537-2_27-1
Floriana Craciun, Thomas Lippert, Maria Dinescu. Pulsed Laser Deposition: Fundamentals, Applications, and Perspectives. 2020, 1-33. https://doi.org/10.1007/978-3-319-69537-2_27-2
Chi T.Q. Nguyen, Hung N. Vu, Minh D. Nguyen. High-performance energy storage and breakdown strength of low-temperature laser-deposited relaxor PLZT thin films on flexible Ti-foils. Journal of Alloys and Compounds 2019, 802 , 422-429. https://doi.org/10.1016/j.jallcom.2019.06.205
M. Coll, J. Fontcuberta, M. Althammer, M. Bibes, H. Boschker, A. Calleja, G. Cheng, M. Cuoco, R. Dittmann, B. Dkhil, I. El Baggari, M. Fanciulli, I. Fina, E. Fortunato, C. Frontera, S. Fujita, V. Garcia, S.T.B. Goennenwein, C.-G. Granqvist, J. Grollier, R. Gross, A. Hagfeldt, G. Herranz, K. Hono, E. Houwman, M. Huijben, A. Kalaboukhov, D.J. Keeble, G. Koster, L.F. Kourkoutis, J. Levy, M. Lira-Cantu, J.L. MacManus-Driscoll, Jochen Mannhart, R. Martins, S. Menzel, T. Mikolajick, M. Napari, M.D. Nguyen, G. Niklasson, C. Paillard, S. Panigrahi, G. Rijnders, F. Sánchez, P. Sanchis, S. Sanna, D.G. Schlom, U. Schroeder, K.M. Shen, A. Siemon, M. Spreitzer, H. Sukegawa, R. Tamayo, J. van den Brink, N. Pryds, F. Miletto Granozio. Towards Oxide Electronics: a Roadmap. Applied Surface Science 2019, 482 , 1-93. https://doi.org/10.1016/j.apsusc.2019.03.312
Zhang Liang, Chang-Feng Yan, Sami Rtimi, Jayasundera Bandara. Piezoelectric materials for catalytic/photocatalytic removal of pollutants: Recent advances and outlook. Applied Catalysis B: Environmental 2019, 241 , 256-269. https://doi.org/10.1016/j.apcatb.2018.09.028
Minmin Zhu, Zehui Du, Soon Siang Chng, Siu Hon Tsang, Edwin Hang Tong Teo. Strong electro-optically active Ni-substituted Pb(Zr 0.35 Ti 0.65 )O 3 thin films: toward integrated active and durable photonic devices. Journal of Materials Chemistry C 2018, 6 (47) , 12919-12927. https://doi.org/10.1039/C8TC04576C
Minh D. Nguyen, Guus Rijnders. Electric field-induced phase transition and energy storage performance of highly-textured PbZrO3 antiferroelectric films with a deposition temperature dependence. Journal of the European Ceramic Society 2018, 38 (15) , 4953-4961. https://doi.org/10.1016/j.jeurceramsoc.2018.07.026
Minh D. Nguyen, Guus Rijnders. Thin films of relaxor ferroelectric/antiferroelectric heterolayered structure for energy storage. Thin Solid Films 2018, 659 , 89-93. https://doi.org/10.1016/j.tsf.2018.05.048
Minh D. Nguyen, Evert P. Houwman, Guus Rijnders. Large piezoelectric strain with ultra-low strain hysteresis in highly c-axis oriented Pb(Zr0.52Ti0.48)O3 films with columnar growth on amorphous glass substrates. Scientific Reports 2017, 7 (1) https://doi.org/10.1038/s41598-017-13425-w

Download PDF

Get e-Alerts

ACS Applied Materials & Interfaces

Cite this: ACS Appl. Mater. Interfaces 2017, 9, 41, 35947–35957

Click to copy citationCitation copied!

https://doi.org/10.1021/acsami.7b07428

Published September 27, 2017

Article Views

Altmetric

Citations

Learn about these metrics

Article Views are the COUNTER-compliant sum of full text article downloads since November 2008 (both PDF and HTML) across all institutions and individuals. These metrics are regularly updated to reflect usage leading up to the last few days.

Citations are the number of other articles citing this article, calculated by Crossref and updated daily. Find more information about Crossref citation counts.

The Altmetric Attention Score is a quantitative measure of the attention that a research article has received online. Clicking on the donut icon will load a page at altmetric.com with additional details about the score and the social media presence for the given article. Find more information on the Altmetric Attention Score and how the score is calculated.

Abstract
High Resolution Image
Download MS PowerPoint Slide
Figure 1
Figure 1. XRD θ–2θ scans of 2-μm-thick PZT films grown on LNO/CNOns/glass: (a) T_d of 450, 520, 560, and 600 °C and at 50 Hz and (b) 10, 25, and 50 Hz and with T_d of 600 °C.
High Resolution Image
Download MS PowerPoint Slide
Figure 2
Figure 2. Surface morphology AFM and cross-sectional SEM images of 2-μm-thick PZT films deposited on LNO/CNOns/glass: (a–c) varying laser frequency and with T_d = 600 °C, (d–g) that same for varying deposition temperature (T_d) and at 50 Hz laser frequency.
High Resolution Image
Download MS PowerPoint Slide
Figure 3
Figure 3. Cross-sectional TEM images of the 2-μm-thick PZT films grown at (a) 10 Hz and (b) 50 Hz, on LNO/CNO/glass substrates. (C)–(H) SAED patterns taken from the corresponding positions in (a) and (b), respectively.
High Resolution Image
Download MS PowerPoint Slide
Figure 4
Figure 4. Ferroelectric polarization (P–E) and piezoelectric (d_33f–E) hysteresis loops of 2-μm-thick PZT films deposited on LNO/CNOns/glass (a,b) at varying laser frequency and with T_d = 600 °C, and (c,d) the same for varying deposition temperature (T_d) and at 50 Hz laser frequency.
High Resolution Image
Download MS PowerPoint Slide
Figure 5
Figure 5. (a) White light interferometer (WLI) measurement and (b) height profile of piezoelectric displacement, of a 2-μm-thick PZT film grown on LNO/CNOns/glass at 50 Hz and 600 °C, measured under a dc-voltage of 10 V.
High Resolution Image
Download MS PowerPoint Slide
Figure 6
Figure 6. XRD θ–2θ patterns of 2-μm-thick PZT films deposited (at 50 Hz and 600 °C) on LNO buffered (a) glass, (b) TiOns/glass, and (c) CNOns/glass.
High Resolution Image
Download MS PowerPoint Slide
Figure 7
Figure 7. AFM and cross-sectional SEM images of PZT films deposited (at 50 Hz and 600 °C) on LNO buffered (a,b) glass, (c,d) TiOns/glass, and (e,f) CNOns/glass.
High Resolution Image
Download MS PowerPoint Slide
Figure 8
Figure 8. (a) P–E and (b) small-signal d_33f–E hysteresis loops, of 2-μm-thick PZT films deposited (at 50 Hz and 600 °C) on LNO buffered glass, TiOns/glass, and CNOns/glass.
High Resolution Image
Download MS PowerPoint Slide
Figure 9
Figure 9. XRD θ–2θ patterns of 2-μm-thick PZT films deposited (at 50 Hz and 600 °C) on LNO buffered (a) SrTiO₃ (STO, 001), (b) CNOns/Si, and (c) CNOns/glass.
High Resolution Image
Download MS PowerPoint Slide
Figure 10
Figure 10. AFM and cross-sectional SEM images of 2-μm-thick PZT films deposited (at 50 Hz and 600 °C) on LNO buffered (a,b) STO, (c,d) CNOns/Si, and (e,f) CNOns/glass.
High Resolution Image
Download MS PowerPoint Slide
Figure 11
Figure 11. (a) P–E and (b) small-signal d_33f–E hysteresis loops, of 2-μm-thick PZT films deposited (at 50 Hz and 600 °C) on LNO buffered STO, CNOns/Si, and CNOns/glass substrates.
High Resolution Image
Download MS PowerPoint Slide
Figure 12
Figure 12. Effective piezoelectric coefficient as a function of the ratio of the grain spacing (δ) in the film and the Young’s modulus (Y_s) of the substrate.
High Resolution Image
Download MS PowerPoint Slide
References
This article references 46 other publications.
1. 1
  Fu, D.; Suzuki, K.; Kato, K.; Suzuki, H. Dynamics of Nanoscale Polarization Backswitching in Tetragonal Lead Zirconate Titanate Thin Film Appl. Phys. Lett. 2003, 82, 2130– 2132 DOI: 10.1063/1.1565502
  1
  Dynamics of nanoscale polarization backswitching in tetragonal lead zirconate titanate thin film
  Fu, Desheng; Suzuki, Kazuyuki; Kato, Kazumi; Suzuki, Hisao
  Applied Physics Letters (2003), 82 (13), 2130-2132CODEN: APPLAB; ISSN:0003-6951. (American Institute of Physics)
  The dynamics of polarization backswitching in highly oriented Pb(Zr0.3Ti0.7)O3 (PZT) thin films has been studied in nanoscale using piezoresponse scanning force microscopy (SFM). Our measurements reveal that a SFM-written domain with diam. about 200 nm in PZT films loses its polarization through both the sidewise and forward backswitching. Both of these sidewise and forward domain wall motions follow a stretched exponential law. However, the characteristic time τ of forward backswitching are about ten times of that sidewise motion. The time dependence of sidewise domain wall velocity indicates that there is a time dependence of activation energy of the barrier that domain motions encounter.
  >> More from SciFinder ^®
  https://chemport.cas.org/services/resolver?origin=ACS&resolution=options&coi=1%3ACAS%3A528%3ADC%252BD3sXisVyktLY%253D&md5=ae327e8fdb268b6528923fafd414b056
2. 2
  Yamakawa, K.; Imai, K.; Arisumi, O.; Arikado, T.; Yoshioka, M.; Owada, T.; Okumura, K. Novel Pb(Ti,Zr)O₃ (PZT) Crystallization Technique Using Flash Lamp for Ferroelectric RAM (FeRAM) Embedded LSIs and One Transistor Type FeRAM Devices Jpn. J. Appl. Phys. 2002, 41, 2630– 2634 DOI: 10.1143/JJAP.41.2630
  2
  Novel Pb(Ti,Zr)O3 (PZT) crystallization technique using flash lamp for ferroelectric RAM (FeRAM) embedded LSIs and one transistor type FeRAM devices
  Yamakawa, Koji; Imai, Keitaro; Arisumi, Osamu; Arikado, Tsunetoshi; Yoshioka, Masaki; Owada, Tatsushi; Okumura, Katsuya
  Japanese Journal of Applied Physics, Part 1: Regular Papers, Short Notes & Review Papers (2002), 41 (4B), 2630-2634CODEN: JAPNDE ISSN:. (Japan Society of Applied Physics)
  A novel method of ferroelec. capacitor formation for Ferroelec. random access memory (FeRAM) embedded LSIs and 1-transistor-type FeRAMs was developed. Amorphous Pb(Ti,Zr)O3(PZT) films were successfully transformed to the perovskite phase by a flash lamp technique with a crystn. time of 1.2 ms at a substrate temp. of 350°. A flash lamp energy of 27 J/cm2 was sufficient to form a ferroelec. crystal structure due to rapid thermal effects with little heat diffusion in the depth direction. This technique enabled PZT film crystn. in Pt/PZT/Pt structures on multi-Al wiring layers. Granular PZT grains were obsd. on Pt, Ru and RuO2 electrodes, which indicates that crystal growth begins from the film surfaces. Ferroelec. property was verified by the process at 350° max. temp. PZT films were also crystd. directly on SiO2. This is useful for the fabrication of embedded FeRAM devices and 1Tr-type FeRAMs. The flash lamp process has great potential for application to dielec. film formation, annealing processes and so on.
  >> More from SciFinder ^®
  https://chemport.cas.org/services/resolver?origin=ACS&resolution=options&coi=1%3ACAS%3A528%3ADC%252BD38Xjs1KltLw%253D&md5=a32a95b4267b2df634ca585712720865
3. 3
  Yang, E. H.; Hishinuma, Y.; Cheng, J. G.; Trolier-Mckinstry, S.; Bloemhof, E.; Levine, B. M. Thin-Film Piezoelectric Unimorph Actuator-Based Deformable Mirror with a Transferred Silicon Membrane J. Microelectromech. Syst. 2006, 15, 1214– 1225 DOI: 10.1109/JMEMS.2006.880208
  3
  Thin-film piezoelectric unimorph actuator-based deformable mirror with a transferred silicon membrane
  Yang, Eui-Hyeok; Hishinuma, Yoshikazu; Cheng, Jian-Gong; Trolier-McKinstry, Susan; Bloemhof, Eric; Levine, B. Martin
  Journal of Microelectromechanical Systems (2006), 15 (5), 1214-1225CODEN: JMIYET; ISSN:1057-7157. (Institute of Electrical and Electronics Engineers)
  A review. This paper describes a proof-of-concept deformable mirror (DM) technol., with a continuous single-crystal Si membrane reflecting surface, based on PbZr0.52Ti0.48O3 (PZT) unimorph membrane microactuators. A potential application for a terrestrial planet tinder adaptive nuller is also discussed. The DM comprises a continuous, large-aperture, Si membrane transferred onto a 20 × 20 piezoelec. unimorph actuator array. The actuator array was prepd. on an electroded Si substrate using chem.-soln.-deposited 2-μm-thick PZT films working in a d31 mode. The substrate was subsequently bulk-micromachined to create membrane structures with residual Si acting as the passive layer in the actuator structure. A math. model simulated the membrane microactuator performance and aided in the optimization of membrane thicknesses and electrode geometries. Excellent agreement was obtained between the model and the exptl. results. The resulting piezoelec. unimorph actuators with patterned PZT films produced large strokes at low voltages. A PZT unimorph actuator, 2.5 mm in diam. with optimized PZT/Si thickness and design showed a deflection of 5.7 μm at 20 V. A DM structure with a 20-μm-thick Si membrane mirror (50 mm × 50 mm area) supported by 400 PZT unimorph actuators was successfully fabricated and optically characterized. The measured max. mirror deflection at 30 V was ∼1 μm. An assembled DM showed an operating frequency bandwidth of 30 kHz and an influence function of ∼30%.
  >> More from SciFinder ^®
  https://chemport.cas.org/services/resolver?origin=ACS&resolution=options&coi=1%3ACAS%3A528%3ADC%252BD28Xht12rtLnL&md5=1f39855fe10f7bbe0b9f5dc67d80c018
4. 4
  Nguyen, M. D.; Yuan, H.; Houwman, E. P.; Dekkers, M.; Koster, G.; ten Elshof, J. E.; Rijnders, G. Highly Oriented Growth of Piezoelectric Thin Films on Silicon Using Two-Dimensional Nanosheets as Growth Template Layer ACS Appl. Mater. Interfaces 2016, 8, 31120– 31127 DOI: 10.1021/acsami.6b09470
  4
  Highly Oriented Growth of Piezoelectric Thin Films on Silicon Using Two-Dimensional Nanosheets as Growth Template Layer
  Nguyen, Minh D.; Yuan, Huiyu; Houwman, Evert P.; Dekkers, Matthijn; Koster, Gertjan; ten Elshof, Johan E.; Rijnders, Guus
  ACS Applied Materials & Interfaces (2016), 8 (45), 31120-31127CODEN: AAMICK; ISSN:1944-8244. (American Chemical Society)
  Ca2Nb3O10 (CNOns) and Ti0.87O2 (TiOns) metal oxide nanosheets (ns) are used as a buffer layer for epitaxial growth of piezoelec. capacitor stacks on Si and Pt/Ti/SiO2/Si (Pt/Si) substrates. Highly (001)- and (110)-oriented Pb(Zr0.52Ti0.48)O3 (PZT) films are achieved by utilizing CNOns and TiOns, resp. The piezoelec. capacitors are characterized by polarization and piezoelec. hysteresis loops and by fatigue measurements. The devices fabricated with SrRuO3 top and bottom electrodes directly on nanosheets/Si have ferroelec. and piezoelec. properties well comparable with devices that use more conventional oxide buffer layers (stacks) such as YSZ, CeO2/YSZ, or SrTiO3 on Si. The devices grown on nanosheets/Pt/Si with Pt top electrodes show significantly improved polarization fatigue properties over those of similar devices grown directly on Pt/Si. The differences in properties are ascribed to differences in the cryst. structures and the d. of the films. These results show a route toward the fabrication of single crystal piezoelec. thin films and devices with high quality, long-lifetime piezoelec. capacitor structures on nonperovskite and even noncryst. substrates such as glass or polished metal surfaces.
  >> More from SciFinder ^®
  https://chemport.cas.org/services/resolver?origin=ACS&resolution=options&coi=1%3ACAS%3A528%3ADC%252BC28XhslCktr%252FO&md5=dbae4e465cc9426f9dc2fb992a559fcc
5. 5
  Cheng, T. D.; Zhou, N. J.; Li, P. Ferroelectric and Photoelectricity Properties of (Pb_0.52Zr_0.48)TiO₃ Thin Films Fabricated on FTO Glass Substrate J. Mater. Sci.: Mater. Electron. 2015, 26, 7104– 7108 DOI: 10.1007/s10854-015-3332-5
  5
  Ferroelectric and photoelectricity properties of (Pb0.52Zr0.48)TiO3 thin films fabricated on FTO glass substrate
  Cheng, Tie Dong; Zhou, Nai Jun; Li, Pei
  Journal of Materials Science: Materials in Electronics (2015), 26 (9), 7104-7108CODEN: JSMEEV; ISSN:0957-4522. (Springer)
  Perovskite-structure (Pb0.52Zr0.48)TiO3 (PZT) thin films have been fabricated on FTO(SnO2 doping F)-coated glass substrate, in which FTO were used as buffer layer and bottom electrode. The sandwich-structure Au/PZT/FTO capacitors exhibited excellent transmittancy, ferroelec. and leakage properties with the remanent polarization of about 56 μC/cm2 and leakage c.d. of ∼10-5 A/cm2 under 5 V-bias voltage. The Au/PZT/FTO thin films changes significantly with applied DC bias field and has tunability and figure of merit of 88 % and 54 resp. under an applied field of 500 kV/cm.
  >> More from SciFinder ^®
  https://chemport.cas.org/services/resolver?origin=ACS&resolution=options&coi=1%3ACAS%3A528%3ADC%252BC2MXhtVWjtb7J&md5=7a56d0a57ee0ca869e3915a5a81aa02a
6. 6
  Davies, R. Telescopes of the Future Astron. Geophys. 2012, 53, 15– 18 DOI: 10.1111/j.1468-4004.2012.53415.x
  There is no corresponding record for this reference.
7. 7
  Favero, I.; Karrai, K. Optomechanics of Deformable Optical Cavities Nat. Photonics 2009, 3, 201– 205 DOI: 10.1038/nphoton.2009.42
  7
  Optomechanics of deformable optical cavities
  Favero, Ivan; Karrai, Khaled
  Nature Photonics (2009), 3 (4), 201-205CODEN: NPAHBY; ISSN:1749-4885. (Nature Publishing Group)
  Resonant optical cavities such as Fabry-Perot resonators or whispering-gallery structures are subject to radiation pressure pushing their reflecting 'walls' apart. Deformable optical cavities yield to this pressure, but in doing so they in turn affect the stored optical energy, resulting in an optical back-action. For such cavities the optics and the mechanics become strongly coupled, making them fascinating systems in which to explore theories of measurements at the quantum limit. Here we provide a summary of the current state of optomechanics of deformable optical cavities, identifying some of the most important recent developments in the field.
  >> More from SciFinder ^®
  https://chemport.cas.org/services/resolver?origin=ACS&resolution=options&coi=1%3ACAS%3A528%3ADC%252BD1MXjslOntLo%253D&md5=d9fce2c6d71f0a9d40a210685a9acc66
8. 8
  Savage, N. Adaptive Optics Nat. Photonics 2008, 2, 756– 757 DOI: 10.1038/nphoton.2008.245
  8
  Adaptive optics
  Savage, Neil
  Nature Photonics (2008), 2 (12), 756-757CODEN: NPAHBY; ISSN:1749-4885. (Nature Publishing Group)
  The use of deformable mirrors to correct unwanted optical aberrations in real time is helping applications ranging from astronomy to biophotonics and data storage, reports Neil Savage.
  >> More from SciFinder ^®
  https://chemport.cas.org/services/resolver?origin=ACS&resolution=options&coi=1%3ACAS%3A528%3ADC%252BD1cXhsVentr3E&md5=9838df989a88f309268bf83c13189914
9. 9
  Bayraktar, M.; Chopra, A.; Rijnders, G.; Boller, K.; Bijkerk, F. Wavefront Correction in the Extreme Ultraviolet Wavelength Range using Piezoelectric Thin Films Opt. Express 2014, 22, 30623– 30632 DOI: 10.1364/OE.22.030623
  There is no corresponding record for this reference.
10. 10
  Choi, J.-J.; Park, G.-T.; Kim, H.-E. Electrooptic Properties of Highly Oriented Pb(Zr,Ti)O₃ Film Grown on Glass Substrate using Lanthanum Nitrate as a Buffer Layer J. Mater. Res. 2004, 19, 3152– 3156 DOI: 10.1557/JMR.2004.0432
  10
  Electrooptic properties of highly oriented Pb(Zr,Ti)O3 film grown on glass substrate using lanthanum nitrate as a buffer layer
  Choi, Jong-Jin; Park, Gun-Tae; Kim, Hyoun-Ee
  Journal of Materials Research (2004), 19 (11), 3152-3156CODEN: JMREEE; ISSN:0884-2914. (Materials Research Society)
  Materials with preferred orientation exhibit unique properties that are frequently improved in comparison with those that are randomly oriented. Optical waveguide devices require high-quality single-crystal-like thin films because of their low optical propagation loss and their near-single-crystal properties. The growth mechanisms of textured films on non-lattice matched amorphous substrates, such as glass, are different from those on single-crystal substrates or the surface of a metal electrode. In this study, highly (100) oriented Pb(Zr,Ti)O3 PZT films were grown on an amorphous substrate by means of the sol-gel multicoating method, using lanthanum nitrate as a buffer layer. The lanthanum nitrate buffer layer was also very effective as a diffusion barrier against Pb-Si interdiffusion. The electrooptic properties of the PZT films were markedly enhanced when their orientation was adjusted to the (100) direction.
  >> More from SciFinder ^®
  https://chemport.cas.org/services/resolver?origin=ACS&resolution=options&coi=1%3ACAS%3A528%3ADC%252BD2cXpvVClur4%253D&md5=7eac233dcd127727b03a1ba698eaa039
11. 11
  Kikuta, K.; Noda, K.; Okumura, S.; Yamaguchi, T.; Hirano, S. Orientation Control of Perovskite Thin Films on Glass Substrates by the Application of a Seed Layer Prepared from Oxide Nanosheets J. Sol-Gel Sci. Technol. 2007, 42, 381– 387 DOI: 10.1007/s10971-006-0200-z
  11
  Orientation control of perovskite thin films on glass substrates by the application of a seed layer prepared from oxide nanosheets
  Kikuta, Koichi; Noda, Koji; Okumura, Shin; Yamaguchi, Toshiaki; Hirano, Shin-Ichi
  Journal of Sol-Gel Science and Technology (2007), 42 (3), 381-387CODEN: JSGTEC; ISSN:0928-0707. (Springer)
  Orientation control of perovskite compds. was investigated by the application of a seed layer prepd. from oxide nanosheets. An aq. suspension of oxide nanosheets was prepd. by the exfoliation of a layered compd. of KCa2Nb3O10 oxide grains. A seed layer composed of (TBA)Ca2Nb3O10 nanosheets (TBA = tetrabutylammonium) was formed on a glass substrate by simply dip coating it in the suspension. Two kinds of perovskite compds., LaNiO3 (LNO) and Pb(Zr,Ti)O3 (PZT) with a preferred orientation of (00l) were successfully grown on this seeded glass substrate. In this study, the relation between lattice mismatch and elec. properties is investigated. A large, oriented PZT film with a size of 5 × 4 cm shows an improved P-E hysteresis behavior by use of this orientation control.
  >> More from SciFinder ^®
  https://chemport.cas.org/services/resolver?origin=ACS&resolution=options&coi=1%3ACAS%3A528%3ADC%252BD2sXksFSjtbs%253D&md5=35920bfb4ff94ab68292692b6aa49fb6
12. 12
  Bayraktar, M.; Chopra, A.; Bijkerk, F.; Rijnders, G. Nanosheet Controlled Epitaxial Growth of PbZr_0.52Ti_0.48O₃ Thin Films on Glass Substrates Appl. Phys. Lett. 2014, 105, 132904 DOI: 10.1063/1.4896991
  There is no corresponding record for this reference.
13. 13
  Jaffe, B.; Cook, W. R., Jr.; Jaffe, H. Piezoelectric Ceramics; Academic Press Inc.: London, 1971.
  There is no corresponding record for this reference.
14. 14
  Trolier-McKinstry, S.; Muralt, P. Thin Film Piezoelectrics for MEMS J. Electroceram. 2004, 12, 7– 17 DOI: 10.1023/B:JECR.0000033998.72845.51
  14
  Thin Film Piezoelectrics for MEMS
  Trolier-McKinstry, S.; Muralt, P.
  Journal of Electroceramics (2004), 12 (1/2), 7-17CODEN: JOELFJ; ISSN:1385-3449. (Kluwer Academic Publishers)
  A review. Thin film piezoelec. materials offer a no. of advantages in microelectromech. systems (MEMS), due to the large motions that can be generated, often with low hysteresis, the high available energy densities, as well as high sensitivity sensors with wide dynamic ranges, and low power requirements. This paper reviews the literature in this field, with an emphasis on the factors that impact the magnitude of the available piezoelec. response. For non-ferroelec. piezoelecs. such as ZnO and AlN, the importance of film orientation is discussed. The high available elec. resistivity in AlN, its compatibility with CMOS processing, and its high frequency const. make it esp. attractive in resonator applications. The higher piezoelec. response available in ferroelec. films enables lower voltage operation of actuators, as well as high sensitivity sensors. Among ferroelec. films, the majority of the MEMS sensors and actuators developed have utilized lead zirconate titanate (PZT) films as the transducer. Randomly oriented PZT films show piezoelec. e31,f coeffs. of about -7 C/m2 at the morphotropic phase boundary. In PZT films, orientation, compn., grain size, defect chem., and mech. boundary conditions all impact the obsd. piezoelec. coeffs. The highest achievable piezoelec. responses can be obsd. in {001} oriented rhombohedrally-distorted perovskites. For a variety of such films, e31,f coeffs. of -12 to -27 C/m2 have been reported.
  >> More from SciFinder ^®
  https://chemport.cas.org/services/resolver?origin=ACS&resolution=options&coi=1%3ACAS%3A528%3ADC%252BD2cXlsVWns70%253D&md5=29efcf3e3b9e2a883d87b09b9cec199a
15. 15
  Horwitz, J. S.; Grabowski, K. S.; Chrisey, D. B.; Leuchtner, R. E. Insitu Deposition of Epitaxial PbZr_xTi_(1–x)O₃ Thin Films by Pulsed Laser Deposition Appl. Phys. Lett. 1991, 59, 1565– 1567 DOI: 10.1063/1.106284
  There is no corresponding record for this reference.
16. 16
  Galca, A. C.; Stancu, V.; Husanu, M. A.; Dragoi, C.; Gheorghe, N. G.; Trupina, L.; Enculescu, M.; Vasile, E. Substrate–Target Distance Dependence of Structural and Optical Properties in Case of Pb(Zr,Ti)O₃ Films Obtained by Pulsed Laser Deposition Appl. Surf. Sci. 2011, 257, 5938– 5943 DOI: 10.1016/j.apsusc.2011.01.056
  There is no corresponding record for this reference.
17. 17
  Guan, L.; Zhang, D. M.; Li, X.; Li, Z. H. Role of Pulse Repetition Rate in Film Growth of Pulsed Laser Deposition Nucl. Instrum. Methods Phys. Res., Sect. B 2008, 266, 57– 62 DOI: 10.1016/j.nimb.2007.10.011
  17
  Role of pulse repetition rate in film growth of pulsed laser deposition
  Guan, Li; Zhang, DuanMing; Li, Xu; Li, ZhiHua
  Nuclear Instruments & Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms (2008), 266 (1), 57-62CODEN: NIMBEU; ISSN:0168-583X. (Elsevier B.V.)
  Pulse repetition rate plays an important role in pulsed laser deposition (PLD) technique. A kinetic Monte Carlo technique was used to simulate the early stage of films growth in PLD process. The simulation result displays that island d. depend on pulse repetition rate. At a low pulse repetition rate, there is such a longer pulse interval that islands are given more time to ripen. Thus the total of island d. reduces and film aggregation tends to compact shape. In contrast, island d. will increase with pulse frequency, and islands may be in dispersed or dendritic mode. Duty cycle, i.e., deposition time can effect on islands aggregation to a certain extent. We also find that a different logarithm scaling behavior exists during PLD film growth, which indicate that island d. at different pulse repetition rates obeys a general scaling function different from the previous scaling form. The crossover effects of pulse frequency and incident intensity have been discussed. Some obtained results have been compared with exptl. data.
  >> More from SciFinder ^®
  https://chemport.cas.org/services/resolver?origin=ACS&resolution=options&coi=1%3ACAS%3A528%3ADC%252BD1cXit1ejuw%253D%253D&md5=9c9f4fa2ca9e7bcf6a5b7bc72dab3022
18. 18
  Tyunina, M.; Leppävuori, S. Effects of Laser Fluence, Size, and Shape of the Laser Focal Spot in Pulsed Laser Deposition using a Multielemental Target J. Appl. Phys. 2000, 87, 8132– 8142 DOI: 10.1063/1.373508
  18
  Effects of laser fluence, size, and shape of the laser focal spot in pulsed laser deposition using a multielemental target
  Tyunina, M.; Leppavuori, S.
  Journal of Applied Physics (2000), 87 (11), 8132-8142CODEN: JAPIAU; ISSN:0021-8979. (American Institute of Physics)
  Two-dimensional distributions of thickness and of compn. of the deposit produced by the room temp. pulsed laser ablation of lead zirconate titanate in vacuum were studied exptl. as a function of laser fluence, of size, and of elongation of the rectangular laser focal spot. The flip over and the elliptical shape of the deposit were obsd. Increase in laser fluence, increase in elongation, and decrease in size of the spot resulted in a stronger broadening of the thickness profiles. The deposit was lead deficient, with the lead profiles "inverse" to the thickness profiles. Excess and/or nominal content of zirconium and of titanium were obsd. with the profiles resembling those of the thickness. The thickness profiles were in general formal agreement with the model of adiabatic expansion of the monoelemental plume. An addnl. broadening of the profiles was ascribed to the spatial distribution of the compn. in the deposit. The behavior of the compn. was qual. analyzed in terms of sorption of ablated species at the substrate. Good agreement between exptl. observations and the conclusions of the sorption anal. suggests a detg. role of the plume-substrate interaction in the deposition process.
  >> More from SciFinder ^®
  https://chemport.cas.org/services/resolver?origin=ACS&resolution=options&coi=1%3ACAS%3A528%3ADC%252BD3cXjtl2nsrk%253D&md5=1dc14b529b39feb14b02e5ef61410df9
19. 19
  Zhu, T. J.; Lu, L.; Lai, M. O. Pulsed Laser Deposition of Lead-Zirconate-Titanate Thin Films and Multilayered Heterostructures Appl. Phys. A: Mater. Sci. Process. 2005, 81, 701– 714 DOI: 10.1007/s00339-005-3227-z
  19
  Pulsed laser deposition of lead-zirconate-titanate thin films and multilayered heterostructures
  Zhu, T. J.; Lu, L.; Lai, M. O.
  Applied Physics A: Materials Science & Processing (2005), 81 (4), 701-714CODEN: APAMFC; ISSN:0947-8396. (Springer GmbH)
  A review. There is an increasing interest in PZT based ferroelec. thin film and devices in recent years. Pulsed laser deposition (PLD) technique was demonstrated to be a versatile and successful tool for the deposition of epitaxial multi-component metal oxide films and heterostructures. This review presents a reasonable understanding of the relationship between PLD processing and compn., crystal structure and orientation of PZT ferroelec. thin films, and heterostructures. Processing-related issues from PLD of PZT thin films and material-integration strategies developed to fabrication of highly oriented or epitaxial PZT thin film based capacitors with excellent ferroelec. properties are discussed in detail.
  >> More from SciFinder ^®
  https://chemport.cas.org/services/resolver?origin=ACS&resolution=options&coi=1%3ACAS%3A528%3ADC%252BD2MXlvVSgsLk%253D&md5=bd4144ce4034e4b0d1bb1fae4a7d7abf
20. 20
  Blank, D. H. A.; Dekkers, M.; Rijnders, G. Pulsed Laser Deposition in Twente: from Research Tool towards Industrial Deposition J. Phys. D: Appl. Phys. 2014, 47, 034006 DOI: 10.1088/0022-3727/47/3/034006
  20
  Pulsed laser deposition in Twente: from research tool towards industrial deposition
  Blank, Dave H. A.; Dekkers, Matthijn; Rijnders, Guus
  Journal of Physics D: Applied Physics (2014), 47 (3), 034006CODEN: JPAPBE; ISSN:0022-3727. (IOP Publishing Ltd.)
  A review. After the discovery of the perovskite high Tc superconductors in 1986, a rare and almost unknown deposition technique attracted attention. Pulsed laser deposition (PLD), or laser ablation as it was called in the beginning, became popular because of the possibility to deposit complex materials, like perovskites, as thin film. By introducing in situ diagnostics and control of the laser fluence, PLD became a technique for several exptl. studies of diverse complex materials. Nowadays, first steps towards industrial applications of PLD thin films on large wafers, up to 200 mm, are underway. In this paper we give a brief overview of the progress that PLD has made in our research group in Twente. Starting with control of deposition parameters, via in situ diagnostics with RHEED and ending with the latest development in equipment for large-area deposition.
  >> More from SciFinder ^®
  https://chemport.cas.org/services/resolver?origin=ACS&resolution=options&coi=1%3ACAS%3A528%3ADC%252BC2cXktFWmtL0%253D&md5=ec8556fcfa9e4e8331385e0d68105519
21. 21
  Leufke, P. M.; Kruk, R.; Wang, D.; Kübel, C.; Hahn, H. Ferroelectric vs. Structural Properties of Large-Distance Sputtered Epitaxial LSMO/PZT Heterostructures AIP Adv. 2012, 2, 032184 DOI: 10.1063/1.4756997
  21
  Ferroelectric vs. structural properties of large-distance sputtered epitaxial LSMO/PZT heterostructures
  Leufke, Philipp M.; Kruk, Robert; Wang, Di; Kuebel, Christian; Hahn, Horst
  AIP Advances (2012), 2 (3), 032184, 12 pp.CODEN: AAIDBI; ISSN:2158-3226. (American Institute of Physics)
  We report on large-distance rf-magnetron sputtering as a competitive alternative to pulsed laser deposition and off-axis sputtering for the growth of epitaxial PbZr0.52Ti0.48O3 (PZT) thin films. To det. the characteristics of the PZT films, the studies were focused on the interplay between microstructural and ferroelec. properties. The films were deposited on insulating or conducting (Nb-doped) SrTiO3 and MgO substrates with La0.83Sr0.17MnO3 as bottom electrode. The uniformity and homogeneity of the samples was demonstrated by using large area (1.0 mm2) top electrodes. It is shown that epitaxial heterostructures of excellent cryst. and ferroelec. quality can be deposited from a stoichiometric PZT target without the need for excess PbO in the target or post-annealing of the samples. (c) 2012 American Institute of Physics.
  >> More from SciFinder ^®
  https://chemport.cas.org/services/resolver?origin=ACS&resolution=options&coi=1%3ACAS%3A528%3ADC%252BC3sXhtlKmtrfO&md5=7b7cf58bab694bbf29c69f18be500b0a
22. 22
  Jacobsen, H.; Prume, K.; Wagner, B.; Ortner, K.; Jung, T. High-Rate Sputtering of Thick PZT Thin Films for MEMS J. Electroceram. 2010, 25, 198– 202 DOI: 10.1007/s10832-010-9615-6
  22
  High-rate sputtering of thick PZT thin films for MEMS
  Jacobsen, Harald; Prume, Klaus; Wagner, Bernhard; Ortner, Kai; Jung, Thomas
  Journal of Electroceramics (2010), 25 (2-4), 198-202CODEN: JOELFJ; ISSN:1385-3449. (Springer)
  Crack and void free polycryst. Lead Zirconate Titanate (PZT) thin films in the range of 5 μm to 10 μm have been successfully deposited on silicon substrates using a novel high rate sputtering process. The sputtered PZT layers show a high dielec. const. εr between 1,000 and 1,800 with a moderate dissipation factor tan (δ) = 0,002 - 0,01 measured at f = 1 kHz, a distinct ferroelec. hysteresis loop with a remanent polarization of 17 μC/cm2 and coercive field strength of 5.4 kV/mm. The piezoelec. coeffs. d33,f = 80 pm/V are measured by using a Double Beam Laser Interferometer (DBLI). Based on this deposition process a membrane actuator mainly consisting of a SOI layer and a sputtered PZT thin film was prepd. The deflection of this membrane actuator depending on the driving voltage was measured with a white light interferometer and compared to the results of finite element anal. (FEA). With this approach a transverse piezoelec. coeff. of about e31 = -11.2 C/m2 was calcd., whereas all the other material parameters in the model were lent from PZT-5A.
  >> More from SciFinder ^®
  https://chemport.cas.org/services/resolver?origin=ACS&resolution=options&coi=1%3ACAS%3A528%3ADC%252BC3cXht12qtLvL&md5=fba176d8ae734d43b22b4fde3befc1ca
23. 23
  Berfield, T. A.; Ong, R. J.; Payne, D. A.; Sottos, N. R. Residual Stress Effects on Piezoelectric Response of Sol-Gel Derived Lead Zirconate Titanate Thin Films J. Appl. Phys. 2007, 101, 024102 DOI: 10.1063/1.2422778
  23
  Residual stress effects on piezoelectric response of sol-gel derived lead zirconate titanate thin films
  Berfield, T. A.; Ong, R. J.; Payne, D. A.; Sottos, N. R.
  Journal of Applied Physics (2007), 101 (2), 024102/1-024102/7CODEN: JAPIAU; ISSN:0021-8979. (American Institute of Physics)
  Piezoelec. properties of three sol-gel derived Pb(Zr0.53Ti0.47)O3 thin film specimens of different thicknesses integrated onto Pt/Ti/SiO2‖Si substrates are investigated to delineate the influence of residual stress on the strain-field response characteristics from other thickness related effects. Residual tensile stresses are detd. from wafer curvature measurements for films ranging in thickness from 190 to 500 nm. Field-induced strains are measured interferometrically for each film under either a large ac driving voltage or a small ac ripple applied over a range of dc biases. Higher residual stresses decrease measured piezoelec. response, while thickness variations with no accompanying change in residual stress state produce little change in strain-field behavior. The diminished performance assocd. with high residual stresses is attributed to redns. in both linear and nonlinear contributions, including decreased polarization switching and domain motion.
  >> More from SciFinder ^®
  https://chemport.cas.org/services/resolver?origin=ACS&resolution=options&coi=1%3ACAS%3A528%3ADC%252BD2sXhtlCrs7c%253D&md5=0c2ca215a8c2b36c7b9902e02dbd795b
24. 24
  Wang, G. S.; Rémiens, D.; Soyer, C. Combined Annealing Temperature and Thickness Effects on Properties of PbZr_0.53Ti_0.47O₃ Films on LaNiO₃/Si Substrate by Sol–Gel Process J. Cryst. Growth 2006, 293, 370– 375 DOI: 10.1016/j.jcrysgro.2006.06.014
  24
  Combined annealing temperature and thickness effects on properties of PbZr0.53Ti0.47O3 films on LaNiO3/Si substrate by sol-gel process
  Wang, G. S.; Remiens, D.; Soyer, C.
  Journal of Crystal Growth (2006), 293 (2), 370-375CODEN: JCRGAE; ISSN:0022-0248. (Elsevier B.V.)
  PbZr0.53Ti0.47O3 (PZT) films with different thickness were deposited on LaNiO3-coated Si substrate by modified sol-gel process. The thickness effect on structure and properties of PZT films annealed at different temp. have been investigated. Single perovskite-phase PZT films with preferred [100] orientation and denser columnar structure were obtained, when annealed at a lower temp. of 600 °C, whereas a higher annealing temp. of 700 °C resulted in [110] preferred orientation and porous structure. The dielec. and ferroelec. properties of PZT films annealed at different temp. were evaluated systemically as a function of thickness, and the dielec. and ferroelec. properties of PZT films were found to greatly depend on both thickness and annealing temp.
  >> More from SciFinder ^®
  https://chemport.cas.org/services/resolver?origin=ACS&resolution=options&coi=1%3ACAS%3A528%3ADC%252BD28XnsFyrs7o%253D&md5=784cecd7494ef25142317287b714e94e
25. 25
  Dale, D.; Fleet, A.; Suzuki, Y.; Brock, J. D. X-ray Scattering from Real Surfaces: Discrete and Continuous Components of Roughness Phys. Rev. B: Condens. Matter Mater. Phys. 2006, 74, 085419 DOI: 10.1103/PhysRevB.74.085419
  There is no corresponding record for this reference.
26. 26
  Nijland, M.; Kumar, S.; Lubbers, R.; Blank, D. H. A.; Rijnders, G.; Koster, G.; ten Elshof, J. E. Local Control over Nucleation of Epitaxial Thin Films by Seed Layers of Inorganic Nanosheets ACS Appl. Mater. Interfaces 2014, 6, 2777– 2785 DOI: 10.1021/am4052624
  26
  Local Control over Nucleation of Epitaxial Thin Films by Seed Layers of Inorganic Nanosheets
  Nijland, Maarten; Kumar, Suresh; Lubbers, Roy; Blank, Dave H. A.; Rijnders, Guus; Koster, Gertjan; ten Elshof, Johan E.
  ACS Applied Materials & Interfaces (2014), 6 (4), 2777-2785CODEN: AAMICK; ISSN:1944-8244. (American Chemical Society)
  Nanosheets of Ti0.87O2 and Ca2Nb3O10 were synthesized and transferred onto Si substrates by Langmuir-Blodgett deposition. Using pulsed laser deposition, SrRuO3 films were formed on top of these samples. The underlying nanosheets detd. both the morphol. and crystallog. orientation of the films. SrRuO3 grew preferentially in the [110]pc direction on Ti0.87O2 nanosheets, while growth proceeded in the [001]pc direction on Ca2Nb3O10 nanosheets (pc refers to the pseudocubic unit cell of SrRuO3). Besides macroscopic control over the out-of-plane crystal direction, single crystal orientations were measured by electron backscatter diffraction on the level of individual nanosheets, indicating that epitaxial growth was achieved on the nanosheets as imposed by their well-defined crystal lattices. The nanosheets also had a clear effect on the magnetic properties of the films, which showed anisotropic behavior only when a seed layer was used. A monolayer consisting of a mixt. of both types of nanosheets was made to locally control the nucleation of SrRuO3. In this context, SrRuO3 was used as model material, as it was used to illustrate that nanosheets can be a unique tool to control the orientation of films on a (sub-)micrometer length scale. This concept may pave the way to the deposition of various other functional materials and the fabrication of devices where the properties are controlled locally by the different crystallog. orientations.
  >> More from SciFinder ^®
  https://chemport.cas.org/services/resolver?origin=ACS&resolution=options&coi=1%3ACAS%3A528%3ADC%252BC2cXht12mt70%253D&md5=cf1dfde933d8ea24156287cf3f4920c5
27. 27
  Shibata, T.; Takano, H.; Ebina, Y.; Kim, D. S.; Ozawa, T. C.; Akatsuka, K.; Ohnishi, T.; Takada, K.; Kogure, T.; Sasaki, T. Versatile van der Waals Epitaxy-Like Growth of Crystal Films using Two-Dimensional Nanosheets as a Seed Layer: Orientation Tuning of SrTiO₃ Films along Three Important Axes on Glass Substrates J. Mater. Chem. C 2014, 2, 441– 449 DOI: 10.1039/C3TC31787K
  27
  Versatile van der Waals epitaxy-like growth of crystal films using two-dimensional nanosheets as a seed layer: orientation tuning of SrTiO3 films along three important axes on glass substrates
  Shibata, Tatsuo; Takano, Hikaru; Ebina, Yasuo; Kim, Dae Sung; Ozawa, Tadashi C.; Akatsuka, Kosho; Ohnishi, Tsuyoshi; Takada, Kazunori; Kogure, Toshihiro; Sasaki, Takayoshi
  Journal of Materials Chemistry C: Materials for Optical and Electronic Devices (2014), 2 (3), 441-449CODEN: JMCCCX; ISSN:2050-7534. (Royal Society of Chemistry)
  One of the basic requirements for attaining a good epitaxy is a close structural matching between a substrate and a growing crystal epilayer. This restrictive requirement causes a major obstacle for its wide application to a range of functional crystal films in electronic, magnetic or optical devices. One approach for overcoming this problem is the so-called van der Waals epitaxy (VDWE) method, which can effectively implement the epitaxy of various crystals on cleaved faces of layered materials having no dangling bonds. The weak adatom-substrate interaction without directional covalent bonding plays a crucial role in the initial stage of VDWE, which drastically relaxes the lattice matching limitation. However, the method requires special materials for use as a substrate, thereby meaning that its applicability is limited. The concept is extended to the two-dimensional (2D) lattice of inorg. nanosheets, which are molecularly thin 2-dimensional crystals produced via artificial exfoliation of layered metal oxides. The nanosheets can neatly cover the surface of conventional substrates such as glass via a facile soln.-based process. Similar to the above-mentioned cleaved faces of layered materials, such substrates can promote VDWE-like crystal growth because of their dangling bond-free nature. Based on this principle, the authors demonstrated a selective deposition of highly textured (100), (110) and (111) SrTiO3 films, a fundamentally important archetype of functional crystals, on glass substrates covered with single-layer nanosheets with suitable 2-dimensional periodicities as a trigger for VDWE-like film growth. The rich varieties of nanosheet structures and their facile deposition onto almost any kinds of substrates provide a significant advantage, expanding potential applications for a range of devices based on functional crystal films.
  >> More from SciFinder ^®
  https://chemport.cas.org/services/resolver?origin=ACS&resolution=options&coi=1%3ACAS%3A528%3ADC%252BC3sXhvFegs7vP&md5=8362ae76a260532dc5af1108ed4ecbb5
28. 28
  Yuan, H.; Lubbers, R.; Besselink, R.; Nijland, M.; ten Elshof, J. E. Improved Langmuir–Blodgett Titanate Films via in Situ Exfoliation Study and Optimization of Deposition Parameters ACS Appl. Mater. Interfaces 2014, 6, 8567– 8574 DOI: 10.1021/am501380d
  28
  Improved Langmuir-Blodgett Titanate Films via in Situ Exfoliation Study and Optimization of Deposition Parameters
  Yuan, Huiyu; Lubbers, Roy; Besselink, Rogier; Nijland, Maarten; ten Elshof, Johan E.
  ACS Applied Materials & Interfaces (2014), 6 (11), 8567-8574CODEN: AAMICK; ISSN:1944-8244. (American Chemical Society)
  The exfoliation and deposition of large (10-100 μm) Ti0.87O2 and small (0.1-1 μm) Ti0.91O2 nanosheets from lepidocrocite-type protonated titanates was investigated for getting high quality films. Exfoliation was carried out with different tetra-alkyl ammonium ions (TAA+) and varying TAA+/H+ ratios, and the colloidal solns. were characterized by small-angle X-ray scattering (SAXS) and UV-visible (UV-vis) spectroscopy. Using Langmuir-Blodgett deposition, the titanate nanosheets were directly transferred onto a Si substrate. The resulting films were characterized by at. force microscopy (AFM). The results indicate that the H1.07Ti1.73O4 titanate exfoliated at very low ratios of TAA+/H+; no lower threshold for exfoliation was obsd. for the TAA+ concn. Nanosheets exfoliated at very low ratios of TAA+/H+ typically showed a small size and porous surface. Subsequent exfoliation of the remaining layered titanate particles yielded much higher quality nanosheets. The optimized deposition parameters for Langmuir-Blodgett films suggest that the surface pressure is a key parameter to control the coverage of the film. The bulk concn. of nanosheets was found to be a less important deposition parameter in the LB deposition process. It only influenced whether the desired surface pressure could be reached at a given max. degree of compression.
  >> More from SciFinder ^®
  https://chemport.cas.org/services/resolver?origin=ACS&resolution=options&coi=1%3ACAS%3A528%3ADC%252BC2cXnvV2isLo%253D&md5=807301510f69460a563a9e1e9d2ca857
29. 29
  Yuan, H.; Nguyen, M.; Hammer, T.; Koster, G.; Rijnders, G.; ten Elshof, J. E. Synthesis of KCa₂Nb₃O₁₀ Crystals with Varying Grain Sizes and Their Nanosheet Monolayer Films as Seed Layers for PiezoMEMS Applications ACS Appl. Mater. Interfaces 2015, 7, 27473– 27478 DOI: 10.1021/acsami.5b09456
  29
  Synthesis of KCa2Nb3O10 Crystals with Varying Grain Sizes and Their Nanosheet Monolayer Films As Seed Layers for PiezoMEMS Applications
  Yuan, Huiyu; Nguyen, Minh; Hammer, Tom; Koster, Gertjan; Rijnders, Guus; ten Elshof, Johan E.
  ACS Applied Materials & Interfaces (2015), 7 (49), 27473-27478CODEN: AAMICK; ISSN:1944-8244. (American Chemical Society)
  The layered perovskite-type niobate KCa2Nb3O10 and its derivs. show advantages in several fields, such as templated film growth and (photo)catalysis. Conventional synthesis routes generally yield crystal size smaller than 2 μm. We report a flux synthesis method to obtain KCa2Nb3O10 crystals with significantly larger sizes. By using different flux materials (K2SO4 and K2MoO4), crystals with av. sizes of 8 and 20 μm, resp., were obtained. The KCa2Nb3O10 crystals from K2SO4 and K2MoO4 assisted synthesis were protonated and exfoliated into monolayer nanosheets, and the optimal exfoliation conditions were detd. Using pulsed laser deposition, highly (001)-oriented piezoelec. stacks (SrRuO3/PbZr0.52Ti0.48O3/SrRuO3, SRO/PZT/SRO) were deposited onto Langmuir-Blodgett films of Ca2Nb3O10- (CNO) nanosheets with varying lateral nanosheet sizes on Si substrates. The resulting PZT thin films showed high crystallinity irresp. of nanosheet size. The small sized nanosheets yielded a high longitudinal piezoelec. coeff. d33 of 100 pm/V, while the larger sized sheets had a d33 of 72 pm/V. An enhanced transverse piezoelec. coeff. d31 of -107 pm/V, an important input parameter for the actuation of active structures in microelectromech. systems (MEMS) devices, was obtained for PZT films grown on CNO nanosheets with large lateral size, while the corresponding value on small sized sheets was -96 pm/V.
  >> More from SciFinder ^®
  https://chemport.cas.org/services/resolver?origin=ACS&resolution=options&coi=1%3ACAS%3A528%3ADC%252BC2MXhvVOrtrbP&md5=9ac7258c54c2dfc1433dbdba457e7d36
30. 30
  Pham, M. T. N.; Boukamp, B. A.; Rijnders, G.; Bouwmeester, H. J. M.; Blank, D. H. A. Pulsed Laser Deposition of PZT/Pt Composite Thin Films with High Dielectric Constants Appl. Phys. A: Mater. Sci. Process. 2004, 79, 907– 910 DOI: 10.1007/s00339-004-2822-8
  30
  Pulsed laser deposition of PZT/Pt composite thin films with high dielectric constants
  Pham, M. T. N.; Boukamp, B. A.; Rijnders, G.; Bouwmeester, H. J. M.; Blank, D. H. A.
  Applied Physics A: Materials Science & Processing (2004), 79 (4-6), 907-910CODEN: APAMFC; ISSN:0947-8396. (Springer-Verlag)
  PbZr0.53Ti0.47O3 (PZT) thin films contg. nanoparticles of Pt (3-10 nm) were produced using pulsed laser deposition (PLD). The Pt content can be tuned by varying the energy d. of the laser beam. Phase and microstructure anal. of the thin films was performed using XRD, SEM, TEM and AFM. The elec. properties were investigated by C-V and I-V measurements. The effective dielec. const. of the composite films increased substantially through the Pt dispersion. These films are promising candidates, for instance, for high-d. dynamic random access memory (DRAM) devices.
  >> More from SciFinder ^®
  https://chemport.cas.org/services/resolver?origin=ACS&resolution=options&coi=1%3ACAS%3A528%3ADC%252BD2cXlslCnsbo%253D&md5=00b81ec29c8b66b78880315226a0218a
31. 31
  Ramesh, R.; Inam, A.; Chan, W. K.; Tillerot, F.; Wilkens, B.; Chang, C. C.; Sands, T.; Tarascon, J. M.; Keramidas, V. G. Ferroelectric PbZr_0.2Ti_0.8O₃ Thin Films on Epitaxial Y-Ba-Cu-O Appl. Phys. Lett. 1991, 59, 3542– 3544 DOI: 10.1063/1.105651
  There is no corresponding record for this reference.
32. 32
  Nguyen, M. D.; Houwman, E. P.; Dekkers, M.; Rijnders, G. Strongly Enhanced Piezoelectric Response in Lead Zirconate Titanate Films with Vertically Aligned Columnar Grains ACS Appl. Mater. Interfaces 2017, 9, 9849– 9861 DOI: 10.1021/acsami.6b16470
  32
  Strongly Enhanced Piezoelectric Response in Lead Zirconate Titanate Films with Vertically Aligned Columnar Grains
  Nguyen, Minh D.; Houwman, Evert P.; Dekkers, Matthijn; Rijnders, Guus
  ACS Applied Materials & Interfaces (2017), 9 (11), 9849-9861CODEN: AAMICK; ISSN:1944-8244. (American Chemical Society)
  Pb(Zr0.52Ti0.48)O3 (PZT) films with (001) orientation were deposited on Pt(111)/Ti/SiO2/Si(100) substrates using pulsed laser deposition. Variation of the laser pulse rate during the deposition of the PZT films was found to play a key role in the control of the microstructure and to change strongly the piezoelec. response of the thin film. The film deposited at low pulse rate has a denser columnar microstructure, which improves the transverse piezoelec. coeff. (d31f) and ferroelec. remanent polarization (Pr), whereas the less densely packed columnar grains in the film deposited at high pulse rates give rise to a significantly higher longitudinal piezoelec. coeff. (d33f) value. The effect of film thickness on the ferroelec. and piezoelec. properties of the PZT films was also studied. With increasing film thickness, the grain column diam. gradually increases, and also the av. Pr and d33f values become larger. The largest piezoelec. coeff. of d33f = 408 pm V-1 was found for a 4-μm film thickness. From films in the thickness range 0.5-5 μm, the z-position dependence of the piezoelec. coeff. could be deduced. A local max. value of 600 pm V-1 was deduced in the 3.5-4.5 μm section of the thickest films. The dependence of the film properties on film thickness is attributed to the decreasing effect of the clamping constraint imposed by the substrate and the increasing spatial sepn. between the grains with increasing film thickness.
  >> More from SciFinder ^®
  https://chemport.cas.org/services/resolver?origin=ACS&resolution=options&coi=1%3ACAS%3A528%3ADC%252BC2sXjsFCksbc%253D&md5=7cef470c18b52779793574c14b0b9979
33. 33
  Haun, M. J.; Furman, E.; Jang, S. J.; Cross, L. E. Thermodynamic Theory of the Lead Zirconate-Titanate Solid Solution System, Part V: Theoretical Calculations Ferroelectrics 1989, 99, 63– 86 DOI: 10.1080/00150198908221440
  There is no corresponding record for this reference.
34. 34
  Cao, Y.; Sheng, G.; Zhang, J. X.; Choudhury, S.; Li, Y. L.; Randall, C. A.; Chen, L. Q. Piezoelectric Response of Single-Crystal PbZr_1–xTi_xO₃ near Morphotropic Phase Boundary Predicted by Phase-Field Simulation Appl. Phys. Lett. 2010, 97, 252904 DOI: 10.1063/1.3530443
  There is no corresponding record for this reference.
35. 35
  Yao, F. Z.; Yu, Q.; Wang, K.; Li, Q.; Li, J. F. Ferroelectric Domain Morphology and Temperature-Dependent Piezoelectricity of (K,Na,Li)(Nb,Ta,Sb)O₃ Lead-Free Piezoceramics RSC Adv. 2014, 4, 20062– 20068 DOI: 10.1039/C4RA01697A
  35
  Ferroelectric domain morphology and temperature-dependent piezoelectricity of (K,Na,Li)(Nb,Ta,Sb)O3 lead-free piezoceramics
  Yao, Fang-Zhou; Yu, Qi; Wang, Ke; Li, Qi; Li, Jing-Feng
  RSC Advances (2014), 4 (39), 20062-20068CODEN: RSCACL; ISSN:2046-2069. (Royal Society of Chemistry)
  Domain morphol. and temp.-dependent piezoelectricity in terms of piezoelec. coeff. d33 and normalized strain d33* of (K,Na,Li)(Nb,Ta,Sb)O3 lead-free piezoceramics at the polymorphic phase boundary were investigated. Transmission electron microscopy (TEM) and piezoresponse force microscopy (PFM) studies revealed a characteristic domain morphol. comprising strip-like domains and featureless domains. Moreover, a facile method based on the field-dependent piezoelec. coeff. d33(E) measurement was verified to characterize in situ temp. dependence of piezoelec. coeff. d33, as an alternative for the conventional ex situ route. It was demonstrated that the normalized strain d33* exhibits superior thermal resistance to piezoelec. coeff. d33, though both parameters are susceptible to temp. variation.
  >> More from SciFinder ^®
  https://chemport.cas.org/services/resolver?origin=ACS&resolution=options&coi=1%3ACAS%3A528%3ADC%252BC2cXotVCiu7o%253D&md5=40af2af98c65f148e314f58b0ccf5b59
36. 36
  Tang, H.; Zhang, S.; Feng, Y.; Li, F.; Shrout, T. R. Piezoelectric Property and Strain Behavior of Pb(Yb_0.5Nb_0.5)O₃–PbHfO₃–PbTiO₃ Polycrystalline Ceramics J. Am. Ceram. Soc. 2013, 96, 2857– 2863 DOI: 10.1111/jace.12389
  36
  Piezoelectric Property and Strain Behavior of Pb(Yb0.5Nb0.5)O3-PbHfO3-PbTiO3 Polycrystalline Ceramics
  Tang, Hua; Zhang, Shujun; Feng, Yujun; Li, Fei; Shrout, Thomas R.
  Journal of the American Ceramic Society (2013), 96 (9), 2857-2863CODEN: JACTAW; ISSN:0002-7820. (Wiley-Blackwell)
  (1-X)Pb(Hf1-yTiy)O3-xPb(Yb0.5Nb0.5)O3 (x = 0.10-0.44, y = 0.55-0.80) ceramics were fabricated. The morphotropic phase boundary (MPB) of the ternary system was detd. by X-ray powder diffraction. The optimum dielec. and piezoelec. properties were achieved in 0.8Pb(Hf0.4Ti0.6)O3-0.2Pb(Yb0.5Nb0.5)O3 ceramics with MPB compn., where the dielec. permittivity εr, piezoelec. coeff. d33, planar electromech. coupling kp, and Curie temp. Tc were found to be on the order of 1930,480 pC/N, 62%, and 360°C, resp. The unipolar strain behavior was evaluated as a function of applied elec. field up to 50 kV/cm to investigate the strain nonlinearity and domain wall motion under large drive field, where the high field piezoelec. d33* was found to be 620 pm/V for 0.82Pb(Hf0.4Ti0.6)O3-0.18Pb(Yb0.5Nb0.5)O3. In addn., Rayleigh anal. was carried out to study the extrinsic contribution, where the value was found to be in the range 2-18%.
  >> More from SciFinder ^®
  https://chemport.cas.org/services/resolver?origin=ACS&resolution=options&coi=1%3ACAS%3A528%3ADC%252BC3sXhsVektLrJ&md5=42765e1c2a2df56192f660e542ea1a00
37. 37
  Zhang, J. X.; Sheng, G.; Chen, L. Q. Large Electric Field Induced Strains in Ferroelectric Islands Appl. Phys. Lett. 2010, 96, 132901 DOI: 10.1063/1.3373915
  There is no corresponding record for this reference.
38. 38
  Wang, J.; Zheng, H.; Ma, Z.; Prasertchoung, S.; Wuttig, M.; Droopad, R.; Yu, J.; Eisenbeiser, K.; Ramesh, R. Epitaxial BiFeO₃ Thin Films on Si Appl. Phys. Lett. 2004, 85, 2574– 2576 DOI: 10.1063/1.1799234
  38
  Epitaxial BiFeO3 thin films on Si
  Wang, J.; Zheng, H.; Ma, Z.; Prasertchoung, S.; Wuttig, M.; Droopad, R.; Yu, J.; Eisenbeiser, K.; Ramesh, R.
  Applied Physics Letters (2004), 85 (13), 2574-2576CODEN: APPLAB; ISSN:0003-6951. (American Institute of Physics)
  BiFeO3 was studied as an alternative environmentally clean ferro/piezoelec. material. 200-nm-thick BiFeO3 films were grown on Si substrates with SrTiO3 as a template layer and SrRuO3 as bottom electrode. X-ray diffraction and TEM studies confirmed the epitaxial growth of the films. The spontaneous polarization of the films was ∼45 μC/cm2. Retention measurement up to several days showed no decay of polarization. A piezoelec. coeff. (d33) of ∼60 pm/V was obsd., which is promising for applications in micro-electro-mech. systems and actuators.
  >> More from SciFinder ^®
  https://chemport.cas.org/services/resolver?origin=ACS&resolution=options&coi=1%3ACAS%3A528%3ADC%252BD2cXotVKnsLs%253D&md5=c44eaf0e2dfd41e97b3128497e27cafd
39. 39
  Yang, S. Y.; Zavaliche, F.; Mohaddes-Ardabili, L.; Vaithyanathan, V.; Schlom, D. G.; Lee, Y. J.; Chu, Y. H.; Cruz, M. P.; Zhan, Q.; Zhao, T.; Ramesh, R. Metalorganic Chemical Vapor Deposition of Lead-Free Ferroelectric BiFeO₃ Films for Memory Applications Appl. Phys. Lett. 2005, 87, 102903 DOI: 10.1063/1.2041830
  39
  Metalloorganic chemical vapor deposition of lead-free ferroelectric BiFeO3 films for memory applications
  Yang, S. Y.; Zavaliche, F.; Mohaddes-Ardabili, L.; Vaithyanathan, V.; Schlom, D. G.; Lee, Y. J.; Chu, Y. H.; Cruz, M. P.; Zhan, Q.; Zhao, T.; Ramesh, R.
  Applied Physics Letters (2005), 87 (10), 102903/1-102903/3CODEN: APPLAB; ISSN:0003-6951. (American Institute of Physics)
  We have grown BiFeO3 thin films on SrRuO3/SrTiO3 and SrRuO3/SrTiO3/Si using liq. delivery MOCVD. Epitaxial BiFeO3 films were successfully prepd. through the systematic control of the chem. reaction and deposition process. We found that the film compn. and phase equil. are sensitive to the Bi:Fe ratio in the precursor. Fe-rich mixts. show the existence of α-Fe2O3, while Bi-rich mixts. show the presence of β-Bi2O3 as a 2nd phase at the surface. In the optimized films, we were able to obtain an epitaxial single perovskite phase thin film. Elec. measurements using both quasistatic hysteresis and pulsed polarization measurements confirm the existence of ferroelectricity with a switched polarization of 110-120 μC/cm2, ΔP(=P*-P). Out-of plane piezoelec. (d33) measurements using an at. force microscope yield a value of 50-60 pm/V.
  >> More from SciFinder ^®
  https://chemport.cas.org/services/resolver?origin=ACS&resolution=options&coi=1%3ACAS%3A528%3ADC%252BD2MXpvFCmtbw%253D&md5=44dc8ca47e336bc3b43d1afdc17ab0c9
40. 40
  Kurihara, K.; Kondo, M.; Sato, K.; Ishii, M.; Wakiya, N.; Shinozaki, K. Electrooptic Properties of Epitaxial Lead Zirconate Titanate Films on Silicon Substrates Jpn. J. Appl. Phys. 2007, 46, 6929– 6932 DOI: 10.1143/JJAP.46.6929
  40
  Electrooptic properties of epitaxial lead zirconate titanate films on silicon substrates
  Kurihara, Kazuaki; Kondo, Masao; Sato, Keisuke; Ishii, Masatoshi; Wakiya, Naoki; Shinozaki, Kazuo
  Japanese Journal of Applied Physics, Part 1: Regular Papers, Brief Communications & Review Papers (2007), 46 (10B), 6929-6932CODEN: JAPNDE; ISSN:0021-4922. (Institute of Pure and Applied Physics)
  Electrooptic (EO) properties and propagation losses of the lead zirconate titanate (PZT) films grown on Si substrates were studied. PZT films were prepd. on Si substrates by chem. soln. method. Refractive index changes and propagation losses of PZT films were evaluated by prism coupling method. A (100)-oriented 8.9-μm-thick epitaxial PZT film grown on a Si substrate with Sr Ru oxide/ceria/yttria-stabilized zirconia (SRO/CeO2/YSZ) epitaxial buffer layer has large EO effect and very low propagation loss. Propagation of an IR light with a wavelength of 1550 nm into a PZT film on Si substrate was successfully confirmed.
  >> More from SciFinder ^®
  https://chemport.cas.org/services/resolver?origin=ACS&resolution=options&coi=1%3ACAS%3A528%3ADC%252BD2sXhtlSkt7bE&md5=668bd91e5b0024832c71b890144271be
41. 41
  Wang, G. S.; Rémiens, D.; Dogheche, E.; Dong, X. L. Effect of Thermal Strain on Structure and Polarization Fatigue of CSD-Derived PbZr_0.53Ti_0.47O₃/LaNiO₃ hetero-Structures Appl. Phys. A: Mater. Sci. Process. 2007, 88, 657– 660 DOI: 10.1007/s00339-007-4022-9
  41
  Effect of thermal strain on structure and polarization fatigue of CSD-derived PbZr0.53Ti0.47O3/LaNiO3 hetero-structures
  Wang, G. S.; Remiens, D.; Dogheche, E.; Dong, X. L.
  Applied Physics A: Materials Science & Processing (2007), 88 (4), 657-660CODEN: APAMFC; ISSN:0947-8396. (Springer)
  PbZr0.53Ti0.47O3/LaNiO3 (PZT/LNO) hetero-structures have been successfully deposited on MgO, SrTiO3, Al2O3 and Si substrate by chem. soln. routes, resp. The X-ray diffraction measurements show that out-of-plane lattice parameters of PZT increase as increase of thermal expansion coeff. of substrate. Polarization fatigues of Pt/PZT/LNO capacitors are strongly affected by the thermal strain caused by difference of thermal expansion coeff. between PZT and substrate materials. High fatigue resistance of Pt/PZT/LNO can be obtained by using substrate with similar thermal expansion coeff. as PZT.
  >> More from SciFinder ^®
  https://chemport.cas.org/services/resolver?origin=ACS&resolution=options&coi=1%3ACAS%3A528%3ADC%252BD2sXnsVantrg%253D&md5=885958a3b00a3174a21004f2bb528328
42. 42
  http://www.sydor.com/wp-content/uploads/Corning-ULE-7972-Low-Expansion-Glass.pdf.
  There is no corresponding record for this reference.
43. 43
  Kawashima, J.; Yamada, Y.; Hirabayashi, I. Critical Thickness and Effective Thermal Expansion Coefficient of YBCO Crystalline Film Phys. C 1998, 306, 114– 118 DOI: 10.1016/S0921-4534(98)00350-5
  43
  Critical thickness and effective thermal expansion coefficient of YBCO crystalline film
  Kawashima, Junichi; Yamada, Yasuji; Hirabayashi, Izumi
  Physica C: Superconductivity (Amsterdam) (1998), 306 (1&2), 114-118CODEN: PHYCE6; ISSN:0921-4534. (Elsevier Science B.V.)
  Crit. thickness for crack formation has been detd. for the YBCO cryst. film deposited on the SrTiO3 (STO) substrate by the liq. phase epitaxial (LPE) method. As-prepd. films, even more than 4 μm in thickness, have no visible cracks, while oxygen-annealed films show apparent crack propagation depending on the film thickness, leading to the estn. of crit. thickness of about 1.35 μm. Films formed on MgO buffered STO substrates have almost the same crit. thickness. The effective thermal expansion coeff. of YBCO cryst. film has been deduced to be 13.4×10-6/K by considering thermal expansion of the substrate and the YBCO film, which causes internal tensile stress and crack formation in the film.
  >> More from SciFinder ^®
  https://chemport.cas.org/services/resolver?origin=ACS&resolution=options&coi=1%3ACAS%3A528%3ADyaK1cXmtl2qu7c%253D&md5=567c17fae0bb03dbb062e5a2e8e4ebf5
44. 44
  Paufler, P.; Bergk, B.; Reibold, M.; Belger, A.; Pätzke, N.; Meyer, D. C. Why is SrTiO₃ Much Stronger at Nanometer than at Centimeter Scale? Solid State Sci. 2006, 8, 782– 792 DOI: 10.1016/j.solidstatesciences.2006.04.005
  44
  Why is SrTiO3 much stronger at nanometer than at centimeter scale?
  Paufler, Peter; Bergk, Beate; Reibold, Marianne; Belger, Andre; Paetzke, Nora; Meyer, Dirk C.
  Solid State Sciences (2006), 8 (7), 782-792CODEN: SSSCFJ; ISSN:1293-2558. (Elsevier B.V.)
  Nanoindentation of (100), (110) and (111) oriented SrTiO3 single crystals at room temp. led to the appearance of slip bands and simultaneously to discontinuities in the force-penetration curve. Combining both enabled a crit. shear stress of the order of 10 GPa to be evaluated which indicates the onset of dislocation generation. Transmission electron microscopy proved that dislocations were nucleated underneath the indenter. The difference between macroscopically and nanoscopically stressed vols. arises due to the availability of mobile dislocations in the former case and due a lack of such dislocations in the latter.
  >> More from SciFinder ^®
  https://chemport.cas.org/services/resolver?origin=ACS&resolution=options&coi=1%3ACAS%3A528%3ADC%252BD28XlvF2qtr8%253D&md5=95fe6fb43a5a2e91d1c3c527cdaf6082
45. 45
  Lee, J.-W.; Choi, J.-J.; Park, G.-T.; Park, C.-S.; Kim, H.-E. Thick Pb(Zr,Ti)O₃ Films Fabricated by Inducing Residual Compressive Stress during the Annealing Process J. Mater. Res. 2005, 20, 2898– 2901 DOI: 10.1557/JMR.2005.0383
  45
  Thick Pb(Zr,Ti)O3 films fabricated by inducing residual compressive stress during the annealing process
  Lee, Jae-Wung; Choi, Jong-Jin; Park, Gun-Tae; Park, Chee-Sung; Kim, Hyoun-Ee
  Journal of Materials Research (2005), 20 (11), 2898-2901CODEN: JMREEE; ISSN:0884-2914. (Materials Research Society)
  The effects of residual stress induced during the annealing process on the microstructural evolution and elec. properties of Pb(Zr,Ti)O3 (PZT) films were studied. PZT films were deposited on platinized silicon substrates by the radio frequency magnetron sputtering method using a single oxide target. Compressive stress was induced in the film by bending the silicon substrate during sputtering using a specially designed substrate holder and subsequently annealing the film without the holder. Without the residual stress, the PZT film was severely cracked when it was thicker than 2 μm due to the thermal expansion mismatch between the PZT and the Si substrate. However, when the residual stress was applied, no cracks were detected in the film for thicknesses of up to 4 μm. The suppression of crack formation was attributed to the residual compressive stress that compensated for the tensile stress generated during and/or after the annealing process. The elec. properties of the PZT film with the residual stress were improved compared to those of the PZT film without the residual stress.
  >> More from SciFinder ^®
  https://chemport.cas.org/services/resolver?origin=ACS&resolution=options&coi=1%3ACAS%3A528%3ADC%252BD2MXht1Slt7%252FL&md5=b7d37dcfa2b64a05a208c606e01caccc
46. 46
  A more detailed model of the clamping may provide a more accurate relation between d_33f, grain separation, and the effect of substrate clamping. One expects that for increasing film thickness, the effect of substrate clamping is relatively smaller compared to the effect of the grain separation. This is indeed observed ref 32. Here the film thickness is constant. The strong effect of the pulse rate suggests that the relative effect of substrate induced clamping compared to grain-to-grain clamping becomes larger for higher pulse rate, resulting in denser films (lower void fraction) in combination with larger diameter grains. This appears to be have assumed the most simple linear dependence.
  There is no corresponding record for this reference.
Supporting Information
Supporting Information
The Supporting Information is available free of charge on the ACS Publications website at DOI: 10.1021/acsami.7b07428.
- AFM images of a monolayer Ca₂Nb₃O₁₀ (CNOns) nanosheet deposited on glass and Si, and Ti_0.87O₂ (TiOns) on glass by the Langmuir–Blodgett (LB) method; Flow diagram for etching process of Pb(Zr_0.52Ti_0.48)O₃ (PZT) film capacitors; X-ray rocking curves of PZT films grown on LNO/CNOns/glass substrates: varying deposition temperature and at 50 Hz laser frequency, and varying laser frequency and with deposition temperature of 600 °C; Piezoelectric large-signal butterfly shaped bipolar strain-field (S–E) curves and unipolar strain-field (S–E) loops of the PZT films deposited on CNOns/glass at different repetition frequencies; Measured piezoelectric coefficient (d_33f) for the PZT films deposited on CNOns/glass at different repetition frequencies; Piezoelectric coefficient versus grain diameter; Piezoelectric coefficient (d_33f) as a function of the number of working cycles for PZT films on CNOns/glass, TiOns/glass, CNOns/Si, and STO (PDF)
- am7b07428_si_001.pdf (581.9 kb)
Terms & Conditions

Most electronic Supporting Information files are available without a subscription to ACS Web Editions. Such files may be downloaded by article for research use (if there is a public use license linked to the relevant article, that license may permit other uses). Permission may be obtained from ACS for other uses through requests via the RightsLink permission system: http://pubs.acs.org/page/copyright/permissions.html.

Controlling Piezoelectric Responses in Pb(Zr0.52Ti0.48)O3 Films through Deposition Conditions and Nanosheet Buffer Layers on GlassClick to copy article linkArticle link copied!

ACS Applied Materials & Interfaces

Abstract

Introduction

Experimental Section

Synthesis Nanosheets

Pulsed Laser Deposition

Analysis and Characterization

Results and Discussion

Effect of Deposition Conditions

Figure 1

Figure 2

Figure 3

Figure 4

Figure 5

Effect of Nanosheet Seed Layers

Figure 6

Figure 7

Figure 8

Effect of Substrate Types

Figure 9

Figure 10

Figure 11

Figure 12

Conclusions

Supporting Information

Terms & Conditions

Author Information

Acknowledgment

References

Cited By

ACS Applied Materials & Interfaces

Article Views

Altmetric

Citations

Recommended Articles

Abstract

Figure 1

Figure 2

Figure 3

Figure 4

Figure 5

Figure 6

Figure 7

Figure 8

Figure 9

Figure 10

Figure 11

Figure 12

References

Supporting Information

Supporting Information

Terms & Conditions

Controlling Piezoelectric Responses in Pb(Zr_0.52Ti_0.48)O₃ Films through Deposition Conditions and Nanosheet Buffer Layers on Glass
Click to copy article linkArticle link copied!