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Hysteretic Characteristics of Pulsed Laser Deposited 0.5Ba(Zr0.2Ti0.8)O3–0.5(Ba0.7Ca0.3)TiO3/ZnO Bilayers
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    Hysteretic Characteristics of Pulsed Laser Deposited 0.5Ba(Zr0.2Ti0.8)O3–0.5(Ba0.7Ca0.3)TiO3/ZnO Bilayers
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    • J. P. B. Silva*
      J. P. B. Silva
      Centre of Physics, University of Minho, Campus de Gualtar, 4710-057 Braga, Portugal
      IFIMUP and IN-Institute of Nanoscience and Nanotechnology, Departamento de Física e Astronomia, Faculdade de Ciências da Universidade do Porto, Rua do Campo Alegre 687, 4169-007 Porto, Portugal
      *E-mail: [email protected] (J.P.B.S.).
    • J. Wang
      J. Wang
      Faculty of Science and Technology and MESA Institute for Nanotechnology, Inorganic Materials Science, University of Twente, P.O. Box 217, 7500 AE Enschede, The Netherlands
      More by J. Wang
    • G. Koster
      G. Koster
      Faculty of Science and Technology and MESA Institute for Nanotechnology, Inorganic Materials Science, University of Twente, P.O. Box 217, 7500 AE Enschede, The Netherlands
      More by G. Koster
    • G. Rijnders
      G. Rijnders
      Faculty of Science and Technology and MESA Institute for Nanotechnology, Inorganic Materials Science, University of Twente, P.O. Box 217, 7500 AE Enschede, The Netherlands
      More by G. Rijnders
    • R. F. Negrea
      R. F. Negrea
      National Institute of Materials Physics, 405A Atomistilor, 077125 Magurele, Romania
      More by R. F. Negrea
    • C. Ghica
      C. Ghica
      National Institute of Materials Physics, 405A Atomistilor, 077125 Magurele, Romania
      More by C. Ghica
    • K. C. Sekhar*
      K. C. Sekhar
      Department of Physics, School of Basic and Applied Sciences, Central University of Tamil Nadu, 610101 Thiruvarur, India
      *E-mail: [email protected] (K.C.S.).
      More by K. C. Sekhar
    • J. Agostinho Moreira
      J. Agostinho Moreira
      IFIMUP and IN-Institute of Nanoscience and Nanotechnology, Departamento de Física e Astronomia, Faculdade de Ciências da Universidade do Porto, Rua do Campo Alegre 687, 4169-007 Porto, Portugal
    • M. J. M. Gomes
      M. J. M. Gomes
      Centre of Physics, University of Minho, Campus de Gualtar, 4710-057 Braga, Portugal
    Other Access OptionsSupporting Information (1)

    ACS Applied Materials & Interfaces

    Cite this: ACS Appl. Mater. Interfaces 2018, 10, 17, 15240–15249
    Click to copy citationCitation copied!
    https://doi.org/10.1021/acsami.8b01695
    Published April 9, 2018
    Copyright © 2018 American Chemical Society

    Abstract

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    In the present work, we study the hysteretic behavior in the electric-field-dependent capacitance and the current characteristics of 0.5Ba(Zr0.2Ti0.8)O3–0.5(Ba0.7Ca0.3)TiO3 (BCZT)/ZnO bilayers deposited on 0.7 wt % Nb-doped (001)-SrTiO3 (Nb:STO) substrates in a metal–ferroelectric–semiconductor (MFS) configuration. The X-ray diffraction measurements show that the BCZT and ZnO layers are highly oriented along the c-axis and have a single perovskite and wurtzite phases, respectively, whereas high-resolution transmission electron microscopy revealed very sharp Nb:STO/BCZT/ZnO interfaces. The capacitance–electric field (CE) characteristics of the bilayers exhibit a memory window of 47 kV/cm and a capacitance decrease of 22%, at a negative bias. The later result is explained by the formation of a depletion region in the ZnO layer. Moreover, an unusual resistive switching (RS) behavior is observed in the BCZT films, where the RS ratio can be 500 times enhanced in the BCZT/ZnO bilayers. The RS enhancement can be understood by the barrier potential profile modulation at the depletion region, in the BCZT/ZnO junction, via ferroelectric polarization switching of the BCZT layer. This work builds a bridge between the hysteretic behavior observed either in the CE and current–electric field characteristics on a MFS structure.

    Copyright © 2018 American Chemical Society

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    Supporting Information

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    The Supporting Information is available free of charge on the ACS Publications website at DOI: 10.1021/acsami.8b01695.

    • Overlap of the PE loops and the IE curves of the (a) BCZT (180 nm) thin films and (b) BCZT (180 nm)/ZnO (15 nm) bilayers (PDF)

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    This article is cited by 16 publications.

    1. José P. B. Silva, Koppole C. Sekhar, Katerina Veltruská, Vladimir Matolín, Raluca F. Negrea, Corneliu Ghica, Marcelo J. S. Oliveira, Joaquim Agostinho Moreira, Mário Pereira, Maria J. M. Gomes. HfO2–Al2O3 Dielectric Layer for a Performing Metal–Ferroelectric–Insulator–Semiconductor Structure with a Ferroelectric 0.5Ba(Zr0.2Ti0.8)O3-0.5(Ba0.7Ca0.3)TiO3 Thin Film. ACS Applied Electronic Materials 2020, 2 (9) , 2780-2787. https://doi.org/10.1021/acsaelm.0c00480
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    8. Hajar Ghannam, J. P. B. Silva, Adil Chahboun. Effect of ZnO surface morphology on its electrochemical performance. RSC Advances 2021, 11 (38) , 23346-23354. https://doi.org/10.1039/D1RA03653J
    9. Jyoti Rani, Varun K. Kushwaha, Piyush K. Patel, C.V. Tomy. Exploring magnetoelectric coupling in trilayer [Ba(Zr0.2Ti0.8)O3- 0.5(Ba0.7Ca0.3)TiO3]/ CoFe2O4/[Ba(Zr0.2Ti0.8)O3- 0.5(Ba0.7Ca0.3)TiO3] thin film. Journal of Alloys and Compounds 2021, 863 , 157702. https://doi.org/10.1016/j.jallcom.2020.157702
    10. Xiang Ji, Chuanbin Wang, Takashi Harumoto, Yongshang Tian, Song Zhang, Rong Tu, Qiang Shen, Ji Shi. Deposition-temperature dependence of structure, ferroelectric property and conduction mechanism of BCZT epitaxial films. Ceramics International 2021, 47 (3) , 3195-3200. https://doi.org/10.1016/j.ceramint.2020.09.156
    11. Jing Yi Dong, Yu Bai, Hang Yu Zheng, He Yang Huang, Jun Liang Lin, Fan Zhang, Chao Wang, Zhan Jie Wang. Effect of La0.67Sr0.33 MnO 3 Insertion Layer on the Ferroelectric and Resistive Switching Behaviors of PbZr0.52Ti0.48O 3 /Nb:SrTiO 3 Heterostructures. Nano 2020, 15 (07) , 2050084. https://doi.org/10.1142/S1793292020500848
    12. J. P. B. Silva, E. M. F. Vieira, J. M. B. Silva, K. Gwozdz, F. G. Figueiras, K. Veltruská, V. Matolín, M. C. Istrate, C. Ghica, K. C. Sekhar, A. L. Kholkin, L. M. Goncalves, A. Chahboun, M. Pereira. Perovskite ferroelectric thin film as an efficient interface to enhance the photovoltaic characteristics of Si/SnO x heterojunctions. Journal of Materials Chemistry A 2020, 8 (22) , 11314-11326. https://doi.org/10.1039/D0TA02198A
    13. Hye-Jin Jin, Jayeong Kim, Yejin Kim, Seokhyun Yoon, Yangjin Lee, Kwanpyo Kim, William Jo. Photo-response in 2D metal chalcogenide-ferroelectric oxide heterostructure controlled by spontaneous polarization. Journal of Materials Chemistry C 2020, 8 (11) , 3724-3729. https://doi.org/10.1039/C9TC05621A
    14. Pooja Singh, Anjana Dogra. Effect of strain on SCLC controlled BaTiO3 hetero-junctions. Materials Today: Proceedings 2020, 28 , 1887-1890. https://doi.org/10.1016/j.matpr.2020.05.296
    15. Zhan Jie Wang, Yu Bai. Resistive Switching Behavior in Ferroelectric Heterostructures. Small 2019, 15 (32) https://doi.org/10.1002/smll.201805088
    16. J. P. B. Silva, K. Kamakshi, R. F. Negrea, C. Ghica, J. Wang, G. Koster, G. Rijnders, F. Figueiras, M. Pereira, M. J. M. Gomes. Ferroelectric switching dynamics in 0.5Ba(Zr0.2Ti0.8)O3-0.5(Ba0.7Ca0.3)TiO3 thin films. Applied Physics Letters 2018, 113 (8) https://doi.org/10.1063/1.5044623

    ACS Applied Materials & Interfaces

    Cite this: ACS Appl. Mater. Interfaces 2018, 10, 17, 15240–15249
    Click to copy citationCitation copied!
    https://doi.org/10.1021/acsami.8b01695
    Published April 9, 2018
    Copyright © 2018 American Chemical Society

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