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Ion Migration Studies in Exfoliated 2D Molybdenum Oxide via Ionic Liquid Gating for Neuromorphic Device Applications
- Cheng ZhangCheng ZhangDepartment of Materials Science and Engineering, University of Tennessee, Knoxville, Tennessee 37996, United StatesCenter for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831, United StatesMore by Cheng Zhang
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- Pushpa R. PudasainiPushpa R. PudasainiDepartment of Materials Science and Engineering, University of Tennessee, Knoxville, Tennessee 37996, United StatesCenter for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831, United StatesMore by Pushpa R. Pudasaini
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- Akinola D. OyedeleAkinola D. OyedeleCenter for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831, United StatesBredesen Center for Interdisciplinary Research and Graduate Education, University of Tennessee, Knoxville, Tennessee 37996, United StatesMore by Akinola D. Oyedele
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- Anton V. IevlevAnton V. IevlevCenter for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831, United StatesMore by Anton V. Ievlev
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- Liubin XuLiubin XuDepartment of Materials Science and Engineering, University of Tennessee, Knoxville, Tennessee 37996, United StatesMore by Liubin Xu
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- Amanda V. HaglundAmanda V. HaglundDepartment of Materials Science and Engineering, University of Tennessee, Knoxville, Tennessee 37996, United StatesMore by Amanda V. Haglund
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- Joo Hyon NohJoo Hyon NohDepartment of Materials Science and Engineering, University of Tennessee, Knoxville, Tennessee 37996, United StatesMore by Joo Hyon Noh
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- Anthony T. WongAnthony T. WongDepartment of Materials Science and Engineering, University of Tennessee, Knoxville, Tennessee 37996, United StatesMore by Anthony T. Wong
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- Kai XiaoKai XiaoCenter for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831, United StatesMore by Kai Xiao
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- Thomas Z. WardThomas Z. WardMaterials Science and Technology Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831, United StatesMore by Thomas Z. Ward
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- David G. MandrusDavid G. MandrusDepartment of Materials Science and Engineering, University of Tennessee, Knoxville, Tennessee 37996, United StatesMaterials Science and Technology Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831, United StatesMore by David G. Mandrus
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- Haixuan XuHaixuan XuDepartment of Materials Science and Engineering, University of Tennessee, Knoxville, Tennessee 37996, United StatesMore by Haixuan Xu
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- Olga S. OvchinnikovaOlga S. OvchinnikovaCenter for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831, United StatesMore by Olga S. Ovchinnikova
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- Philip D. Rack*Philip D. Rack*E-mail [email protected] (P.D.R.).Department of Materials Science and Engineering, University of Tennessee, Knoxville, Tennessee 37996, United StatesCenter for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831, United StatesMore by Philip D. Rack
Abstract
The formation of an electric double layer in ionic liquid (IL) can electrostatically induce charge carriers and/or intercalate ions in and out of the lattice which can trigger a large change of the electronic, optical, and magnetic properties of materials and even modify the crystal structure. We present a systematic study of ionic liquid gating of exfoliated 2D molybdenum trioxide (MoO3) devices and correlate the resultant electrical properties to the electrochemical doping via ion migration during the IL biasing process. A nearly 9 orders of magnitude modulation of the MoO3 conductivity is obtained for the two types of ionic liquids that are investigated. In addition, notably rapid on/off switching was realized through a lithium-containing ionic liquid whereas much slower modulation was induced via oxygen extraction/intercalation. Time of flight–secondary ion mass spectrometry confirms the Li intercalation. Density functional theory (DFT) calculations have been carried out to examine the underlying metallization mechanism. Results of short-pulse tests show the potential of these MoO3 devices as neuromorphic computing elements due to their synaptic plasticity.
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