Crystal-Structure-Dependent Piezotronic and Piezo-Phototronic Effects of ZnO/ZnS Core/Shell Nanowires for Enhanced Electrical Transport and Photosensing PerformanceClick to copy article linkArticle link copied!
- Sehee JeongSehee JeongDepartment of Nanobio Materials and Electronics, Gwangju Institute of Science and Technology, Gwangju 61005, Republic of KoreaMore by Sehee Jeong
- Min Woo KimMin Woo KimSchool of Materials Science and Engineering, Gwangju Institute of Science and Technology, Gwangju 61005, Republic of KoreaMore by Min Woo Kim
- Yong-Ryun JoYong-Ryun JoSchool of Materials Science and Engineering, Gwangju Institute of Science and Technology, Gwangju 61005, Republic of KoreaMore by Yong-Ryun Jo
- Tae-Yun KimTae-Yun KimSchool of Advanced Materials Science and Engineering, Sungkyunkwan University, Suwon 16419, Republic of KoreaMore by Tae-Yun Kim
- Young-Chul LeemYoung-Chul LeemSchool of Materials Science and Engineering, Gwangju Institute of Science and Technology, Gwangju 61005, Republic of KoreaMore by Young-Chul Leem
- Sang-Woo KimSang-Woo KimSchool of Advanced Materials Science and Engineering, Sungkyunkwan University, Suwon 16419, Republic of KoreaMore by Sang-Woo Kim
- Bong-Joong KimBong-Joong KimSchool of Materials Science and Engineering, Gwangju Institute of Science and Technology, Gwangju 61005, Republic of KoreaMore by Bong-Joong Kim
- Seong-Ju Park*Seong-Ju Park*E-mail: [email protected]Department of Nanobio Materials and Electronics and School of Materials Science and Engineering, Gwangju Institute of Science and Technology, Gwangju 61005, Republic of KoreaMore by Seong-Ju Park
Abstract

We report the crystal-structure-dependent piezotronic and piezo-phototronic effects of ZnO/ZnS core/shell nanowires (CS NWs) having different shell layer crystalline structures. The wurtzite (WZ) ZnO/WZ ZnS CS NWs showed higher electrical transport and photosensing properties under external strain than the WZ ZnO/zinc blende (ZB) ZnS CS NWs. The WZ ZnO/WZ ZnS CS NWs under a compressive strain of −0.24% showed 4.4 and 8.67 times larger increase in the output current (1.93 × 10–4 A) and photoresponsivity (8.76 × 10–1 A/W) than those under no strain. However, the WZ ZnO/ZB ZnS CS NWs under the same strain condition showed 3.2 and 2.16 times larger increase in the output current (1.13 × 10–4 A) and photoresponsivity (2.16 × 10–1 A/W) than those under no strain. This improvement is ascribed to strain-induced piezopolarization charges at both the WZ ZnO NWs and the grains of the WZ ZnS shell layer in WZ ZnO/WZ ZnS CS NWs, whereas piezopolarization charges are induced only in the ZnO core region of the WZ ZnO/ZB ZnS CS NWs. These charges can change the type-II band alignment in the ZnO and ZnS interfacial region as well as the Schottky barrier height at the junction between the semiconductor and the metal, thus facilitating electrical transport and reducing the recombination probability of charge carriers under UV irradiation.
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