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Facile Doping in Two-Dimensional Transition-Metal Dichalcogenides by UV Light

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    Research Article

    Facile Doping in Two-Dimensional Transition-Metal Dichalcogenides by UV Light
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    • Thuc Hue Ly*
      Thuc Hue Ly
      Department of Chemistry and Center of Super-Diamond & Advanced Films (COSDAF), City University of Hong Kong, Kowloon 999077, Hong Kong, China
      *E-mail: [email protected]
      More by Thuc Hue Ly
      Orcidhttp://orcid.org/0000-0001-7852-3811
    • Qingming Deng
      Qingming Deng
      Physics Department, School of Physics and Electronic Electrical Engineering & and Jiangsu Key Laboratory for Chemistry of Low-Dimensional Materials, Huaiyin Normal University, Huaian 223300, China
      Department of Energy Conversion and Storage, Technical University of Denmark, Fysikvej, 2800 Kgs. Lyngby, Denmark
      More by Qingming Deng
      Orcidhttp://orcid.org/0000-0002-5293-0256
    • Manh Ha Doan
      Manh Ha Doan
      IBS Center for Integrated Nanostructure Physics, Institute for Basic Science  and  Department of Energy Science, Sungkyunkwan University, Suwon 440-746, Korea
      More by Manh Ha Doan
    • Lain-Jong Li
      Lain-Jong Li
      Physical Sciences and Engineering, King Abdullah University of Science and Technology, Thuwal 23955-6900, Saudi Arabia
      More by Lain-Jong Li
    • Jiong Zhao
      Jiong Zhao
      Department of Applied Physics, The Hong Kong Polytechnic University, Kowloon 999077, Hong Kong, China
      More by Jiong Zhao
      Orcidhttp://orcid.org/0000-0002-7411-0734
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    ACS Applied Materials & Interfaces

    Cite this: ACS Appl. Mater. Interfaces 2018, 10, 35, 29893–29901
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    https://doi.org/10.1021/acsami.8b09797
    Published August 13, 2018
    Copyright © 2018 American Chemical Society
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    Abstract

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    Two-dimensional (2D) materials have been emerging as potential candidates for the next-generation materials in various technology fields. The performance of the devices based on these 2D materials depends on their intrinsic band structures as well as the extrinsic (doping) effects such as surrounding chemicals and environmental oxygen/moisture, which strongly determines their Fermi energy level. Herein, we report the UV treatments on the 2D transition-metal dichalcogenides, to controllably dope the samples without damaging the crystal structures or quenching the luminescence properties. More surprisingly, both n-type and p-type doping can be achieved depending on the initial status of the sample and the UV treatment conditions. The doping mechanisms were elaborated on the atomic scale with transmission electron microscopy and ab initio calculations. The facile doping by UV light has potential to be integrated with photolithography processes, aiming for the large-scale integrated device/circuits design and fabrications.

    Copyright © 2018 American Chemical Society

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    Supporting Information

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    The Supporting Information is available free of charge on the ACS Publications website at DOI: 10.1021/acsami.8b09797.

    • Supporting information includes Figures S1–S11 and Table S1 (PDF)

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    ACS Applied Materials & Interfaces

    Cite this: ACS Appl. Mater. Interfaces 2018, 10, 35, 29893–29901
    Click to copy citationCitation copied!
    https://doi.org/10.1021/acsami.8b09797
    Published August 13, 2018
    Copyright © 2018 American Chemical Society
    Request reuse permissions

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