Local Structure and Point-Defect-Dependent Area-Selective Atomic Layer Deposition Approach for Facile Synthesis of p-Cu2O/n-ZnO Segmented NanojunctionsClick to copy article linkArticle link copied!
- Claudia de MeloClaudia de MeloUniversité de Lorraine, CNRS, IJL, F-54000 Nancy, FranceDepartment of Materials Science and Engineering, Saarland University, D-66123 Saarbrücken, GermanyMore by Claudia de Melo
- Maud Jullien
- Jaafar Ghanbaja
- François MontaigneFrançois MontaigneUniversité de Lorraine, CNRS, IJL, F-54000 Nancy, FranceMore by François Montaigne
- Jean-François PiersonJean-François PiersonUniversité de Lorraine, CNRS, IJL, F-54000 Nancy, FranceMore by Jean-François Pierson
- Flavio SolderaFlavio SolderaDepartment of Materials Science and Engineering, Saarland University, D-66123 Saarbrücken, GermanyMore by Flavio Soldera
- Federica RigoniFederica RigoniDepartment of Engineering Sciences and Mathematics, Division of Materials Science, Luleå University of Technology, 971 87 Luleå, SwedenMore by Federica Rigoni
- Nils AlmqvistNils AlmqvistDepartment of Engineering Sciences and Mathematics, Division of Materials Science, Luleå University of Technology, 971 87 Luleå, SwedenMore by Nils Almqvist
- Alberto VomieroAlberto VomieroDepartment of Engineering Sciences and Mathematics, Division of Materials Science, Luleå University of Technology, 971 87 Luleå, SwedenMore by Alberto Vomiero
- Frank MücklichFrank MücklichDepartment of Materials Science and Engineering, Saarland University, D-66123 Saarbrücken, GermanyMore by Frank Mücklich
- David Horwat*David Horwat*E-mail: [email protected]Université de Lorraine, CNRS, IJL, F-54000 Nancy, FranceMore by David Horwat
Abstract
Area-selective atomic layer deposition (AS-ALD) has attracted much attention in recent years due to the possibility of achieving accurate patterns in nanoscale features, which render this technique compatible with the continuous downscaling in nanoelectronic devices. The growth selectivity is achieved by starting from different materials and results (ideally) in localized growth of a single material. We propose here a new concept, more subtle and general, in which a property of the substrate is modulated to achieve localized growth of different materials. This concept is demonstrated by selective growth of high-quality metallic Cu and semiconducting Cu2O thin films, achieved by changing the type of majority point defects in the ZnO underneath film exposed to the reactive species using a patterned bilayer structure composed of highly conductive and highly resistive areas, as confirmed by transmission electron microscopy (TEM) and electron energy loss spectroscopy (EELS). The selective growth of these materials in a patterned ZnO/Al-doped ZnO substrate allows the fabrication of p-Cu2O/n-ZnO nanojunctions showing a nonlinear rectifying behavior typical of a p–n junction, as confirmed by conductive atomic force microscopy (C-AFM). This process expands the spectra of materials that can be grown in a selective manner by ALD and opens up the possibility of fabricating different architectures, taking advantage of the area-selective deposition. This offers a variety of opportunities in the field of transparent electronics, catalysis, and photovoltaics.
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