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Bias- and Gate-Tunable Gas Sensor Response Originating from Modulation in the Schottky Barrier Height of a Graphene/MoS2 van der Waals Heterojunction

  • Hiroshi Tabata*
    Hiroshi Tabata
    Division of Electrical, Electronic and Information Engineering, Graduate School of Engineering, Osaka University, 2-1 Yamadaoka, Suita, Osaka 565-0871, Japan
    *E-mail: [email protected]
  • Yuta Sato
    Yuta Sato
    Division of Electrical, Electronic and Information Engineering, Graduate School of Engineering, Osaka University, 2-1 Yamadaoka, Suita, Osaka 565-0871, Japan
    More by Yuta Sato
  • Kouhei Oi
    Kouhei Oi
    Division of Electrical, Electronic and Information Engineering, Graduate School of Engineering, Osaka University, 2-1 Yamadaoka, Suita, Osaka 565-0871, Japan
    More by Kouhei Oi
  • Osamu Kubo
    Osamu Kubo
    Division of Electrical, Electronic and Information Engineering, Graduate School of Engineering, Osaka University, 2-1 Yamadaoka, Suita, Osaka 565-0871, Japan
    More by Osamu Kubo
  • , and 
  • Mitsuhiro Katayama
    Mitsuhiro Katayama
    Division of Electrical, Electronic and Information Engineering, Graduate School of Engineering, Osaka University, 2-1 Yamadaoka, Suita, Osaka 565-0871, Japan
Cite this: ACS Appl. Mater. Interfaces 2018, 10, 44, 38387–38393
Publication Date (Web):October 17, 2018
Copyright © 2018 American Chemical Society

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    Abstract Image

    We report on the gas-sensing characteristics of a van der Waals heterojunction consisting of graphene and a MoS2 flake. To extract the response actually originating from the heterojunction area, the other gas-sensitive parts were passivated by gas barrier layers. The graphene/MoS2 heterojunction device demonstrated a significant change in resistance, by a factor of greater than 103, upon exposure to 1 ppm NO2 under a reverse-bias condition, which was revealed to be a direct reflection of the modulation of the Schottky barrier height at the graphene/MoS2 interface. The magnitude of the response demonstrated strong dependences on the bias and back-gate voltages. The response further increased with increasing reverse bias. Conversely, it dramatically decreased when measured at a large forward bias or a large positive back-gate voltage. These behaviors were analyzed using a metal–semiconductor–metal diode model consisting of graphene/MoS2 and counter Ti/MoS2 Schottky diodes.

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    The Supporting Information is available free of charge on the ACS Publications website at DOI: 10.1021/acsami.8b14667.

    • Structures of as-prepared and gas-barrier-covered devices and their sensor responses, analysis of the GMH device using the MSM model, and estimation of Fermi-level shift due to NO2 exposure in graphene forming a contact with a MoS2 flake (PDF)

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