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Microstructured Porous Pyramid-Based Ultrahigh Sensitive Pressure Sensor Insensitive to Strain and Temperature
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    Research Article

    Microstructured Porous Pyramid-Based Ultrahigh Sensitive Pressure Sensor Insensitive to Strain and Temperature
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    • Jun Chang Yang
      Jun Chang Yang
      Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon 34141, Republic of Korea
    • Jin-Oh Kim
      Jin-Oh Kim
      Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon 34141, Republic of Korea
      More by Jin-Oh Kim
    • Jinwon Oh
      Jinwon Oh
      Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon 34141, Republic of Korea
      More by Jinwon Oh
    • Se Young Kwon
      Se Young Kwon
      Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon 34141, Republic of Korea
    • Joo Yong Sim
      Joo Yong Sim
      Bio-Medical IT Convergence Research Department, Electronics and Telecommunications Research Institute (ETRI), Daejeon 34129, Republic of Korea
      More by Joo Yong Sim
    • Da Won Kim
      Da Won Kim
      Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon 34141, Republic of Korea
      More by Da Won Kim
    • Han Byul Choi
      Han Byul Choi
      Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon 34141, Republic of Korea
    • Steve Park*
      Steve Park
      Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon 34141, Republic of Korea
      *E-mail: [email protected]
      More by Steve Park
    Other Access OptionsSupporting Information (1)

    ACS Applied Materials & Interfaces

    Cite this: ACS Appl. Mater. Interfaces 2019, 11, 21, 19472–19480
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    https://doi.org/10.1021/acsami.9b03261
    Published May 6, 2019
    Copyright © 2019 American Chemical Society

    Abstract

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    An ultrahigh sensitive capacitive pressure sensor based on a porous pyramid dielectric layer (PPDL) is reported. Compared to that of the conventional pyramid dielectric layer, the sensitivity was drastically increased to 44.5 kPa–1 in the pressure range <100 Pa, an unprecedented sensitivity for capacitive pressure sensors. The enhanced sensitivity is attributed to a lower compressive modulus and larger change in an effective dielectric constant under pressure. By placing the pressure sensors on islands of hard elastomer embedded in a soft elastomer substrate, the sensors exhibited insensitivity to strain. The pressure sensors were also nonresponsive to temperature. Finally, a contact resistance-based pressure sensor is also demonstrated by chemically grafting PPDL with a conductive polymer, which also showed drastically enhanced sensitivity.

    Copyright © 2019 American Chemical Society

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    Supporting Information

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    The Supporting Information is available free of charge on the ACS Publications website at DOI: 10.1021/acsami.9b03261.

    • Numerical analysis of ΔC/C0 and sensitivity in capacitive pressure sensors; the comparison of sensor performance of previous reported capacitive pressure sensors; numerical analysis of ΔI/I0 in resistive pressure sensors; the comparison of sensor performance of previous reported resistive pressure sensors; SEM images obtained at various steps along the fabrication process; transmittance of the microstructured PDMS layer; pressure versus compressive strain curve; average sensitivity at various pressure ranges in capacitive sensor; hysteresis curve at a higher strain rate and wider pressure range; response and recovery time of capacitive pressure sensor; photograph of PDMS islands in the Ecoflex matrix; the relative change in the capacitance versus bending radius; the chemical structure of polypyrrole; signal change due to fruit fly landing on the contact resistance-based pressure sensor; response and recovery time of contact resistance-based pressure sensor; experimental setup of applying the change in temperature, strain, and pressure simultaneously (PDF)

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