Ultralow-Noise Organic Transistors Based on Polymeric Gate Dielectrics with Self-Assembled Modifiers
- Masaya KondoMasaya KondoThe Institute of Scientific and Industrial Research, Osaka University, 8-1, Mihogaoka, Ibaraki, Osaka 567-0047, JapanGraduate School of Engineering, Osaka University, 2-1, Yamada-oka, Suita, Osaka 565-0871, JapanAdvanced Photonics and Biosensing Open Innovation Laboratory, National Institute of Advanced Industrial Science and Technology, Photonics Center P3 Bldg. 2-1, Yamadaoka, Suita, Osaka 565-0871, JapanMore by Masaya Kondo
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- Takafumi Uemura*Takafumi Uemura*E-mail: [email protected] (T.U.).The Institute of Scientific and Industrial Research, Osaka University, 8-1, Mihogaoka, Ibaraki, Osaka 567-0047, JapanAdvanced Photonics and Biosensing Open Innovation Laboratory, National Institute of Advanced Industrial Science and Technology, Photonics Center P3 Bldg. 2-1, Yamadaoka, Suita, Osaka 565-0871, JapanMore by Takafumi Uemura
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- Fumitaka IshiwariFumitaka IshiwariLaboratory for Chemistry and Life Science, Institute of Innovative Research, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama 226-8503, JapanMore by Fumitaka Ishiwari
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- Takashi KajitaniTakashi KajitaniLaboratory for Chemistry and Life Science, Institute of Innovative Research, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama 226-8503, JapanMore by Takashi Kajitani
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- Yoshiaki ShojiYoshiaki ShojiLaboratory for Chemistry and Life Science, Institute of Innovative Research, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama 226-8503, JapanMore by Yoshiaki Shoji
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- Masato MoritaMasato MoritaLaboratory for Chemistry and Life Science, Institute of Innovative Research, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama 226-8503, JapanMore by Masato Morita
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- Naoko NambaNaoko NambaAdvanced Photonics and Biosensing Open Innovation Laboratory, National Institute of Advanced Industrial Science and Technology, Photonics Center P3 Bldg. 2-1, Yamadaoka, Suita, Osaka 565-0871, JapanMore by Naoko Namba
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- Yumi InoueYumi InoueThe Institute of Scientific and Industrial Research, Osaka University, 8-1, Mihogaoka, Ibaraki, Osaka 567-0047, JapanMore by Yumi Inoue
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- Yuki NodaYuki NodaThe Institute of Scientific and Industrial Research, Osaka University, 8-1, Mihogaoka, Ibaraki, Osaka 567-0047, JapanMore by Yuki Noda
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- Teppei ArakiTeppei ArakiThe Institute of Scientific and Industrial Research, Osaka University, 8-1, Mihogaoka, Ibaraki, Osaka 567-0047, JapanGraduate School of Engineering, Osaka University, 2-1, Yamada-oka, Suita, Osaka 565-0871, JapanAdvanced Photonics and Biosensing Open Innovation Laboratory, National Institute of Advanced Industrial Science and Technology, Photonics Center P3 Bldg. 2-1, Yamadaoka, Suita, Osaka 565-0871, JapanMore by Teppei Araki
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- Takanori Fukushima*Takanori Fukushima*E-mail: [email protected] (T.F.).Laboratory for Chemistry and Life Science, Institute of Innovative Research, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama 226-8503, JapanMore by Takanori Fukushima
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- Tsuyoshi Sekitani*Tsuyoshi Sekitani*E-mail: [email protected] (T.S.).The Institute of Scientific and Industrial Research, Osaka University, 8-1, Mihogaoka, Ibaraki, Osaka 567-0047, JapanGraduate School of Engineering, Osaka University, 2-1, Yamada-oka, Suita, Osaka 565-0871, JapanAdvanced Photonics and Biosensing Open Innovation Laboratory, National Institute of Advanced Industrial Science and Technology, Photonics Center P3 Bldg. 2-1, Yamadaoka, Suita, Osaka 565-0871, JapanMore by Tsuyoshi Sekitani
Abstract
In this study, ultralow 1/f noise organic thin-film transistors (OTFTs) based on parylene gate dielectrics modified with triptycene (Trip) modifiers were fabricated. The fabricated OTFTs showed the lowest 1/f noise level among those of previously reported OTFTs. It is well known that 1/f noise causes degradation of signal integrity in analog and digital circuits. However, conventional OTFTs still possess high 1/f noise levels, and the factors that strongly affect 1/f noise are still ambiguous. In this work, the effect of gate dielectric surface on 1/f noise was investigated. First, by comparing OTFTs composed of various channel lengths, we revealed that contact resistance did not affect 1/f noise. Second, we compared parylene OTFTs with and without a self-assembled Trip modifier layer in terms of 1/f noise and trap density of states (Trap DOS). The experiments revealed that a specific Trip modifier layer suppresses the shallow Trap DOS in the OTFTs, leading to a low 1/f noise. Moreover, the 1/f noise level and Trap DOS of various kinds of OTFTs were comprehensively compared, which highlighted that the 1/f noise of OTFTs strongly depends on the gate dielectric surface. Finally, detailed analysis of the gate dielectric interface led us to conclude that the disorder of gate dielectrics and the crystalline quality of semiconductor films are related to shallow Trap DOS, which correlates with 1/f noise.
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