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Scalable Two-Dimensional Lateral Metal/Semiconductor Junction Fabricated with Selective Synthetic Integration of Transition-Metal-Carbide (Mo2C)/-Dichalcogenide (MoS2)

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    Research Article

    Scalable Two-Dimensional Lateral Metal/Semiconductor Junction Fabricated with Selective Synthetic Integration of Transition-Metal-Carbide (Mo2C)/-Dichalcogenide (MoS2)
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    • Seunghyuk Choi
      Seunghyuk Choi
      SKKU Advanced Institute of Nanotechnology (SAINT), Sungkyunkwan University, Suwon 440-746, Korea
      More by Seunghyuk Choi
    • Young Jae Kim
      Young Jae Kim
      SKKU Advanced Institute of Nanotechnology (SAINT), Sungkyunkwan University, Suwon 440-746, Korea
      More by Young Jae Kim
    • Jaeho Jeon
      Jaeho Jeon
      SKKU Advanced Institute of Nanotechnology (SAINT), Sungkyunkwan University, Suwon 440-746, Korea
      More by Jaeho Jeon
    • Byoung Hun Lee
      Byoung Hun Lee
      School of Materials Science and Engineering, Gwangju Institute of Science and Technology, Gwangju 500-712, Korea
      More by Byoung Hun Lee
      Orcidhttp://orcid.org/0000-0002-4540-7731
    • Jeong Ho Cho
      Jeong Ho Cho
      Department of Chemical Engineering, Yonsei University, Seoul 03722, Korea
      More by Jeong Ho Cho
      Orcidhttp://orcid.org/0000-0002-1030-9920
    • Sungjoo Lee*
      Sungjoo Lee
      SKKU Advanced Institute of Nanotechnology (SAINT)  and  Department of Nano Engineering, Sungkyunkwan University, Suwon 440-746, Korea
      *E-mail: [email protected]
      More by Sungjoo Lee
      Orcidhttp://orcid.org/0000-0003-1284-3593
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    ACS Applied Materials & Interfaces

    Cite this: ACS Appl. Mater. Interfaces 2019, 11, 50, 47190–47196
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    https://doi.org/10.1021/acsami.9b13660
    Published November 25, 2019
    Copyright © 2019 American Chemical Society
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    Abstract

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    The construction of manufacturable, stable, high-quality metal/semiconductor junction structures is of fundamental importance to implement higher-level devices and circuit systems. Owing to the unique features of two-dimensional (2D) materials, namely, that intralayer atoms are covalently bonded, whereas interlayer atoms are held together by weak attractive interactions, there are several studies on the fabrication and identification of the peculiar properties of various 2D heterostructures. However, large-scale 2D lateral metal/semiconductor junction structures with acceptable levels of manufacturability and quality have not yet been demonstrated, which is among the critical technological hurdles to overcome for the realization of 2D material-based electronic and photonic devices. This paper reports the fabrication of a manufacturable large-scale metal (Mo2C)/semiconductor (MoS2) junction via selective synthetic integration and a lithographically patterned SiO2 masking layer. It is demonstrated that whereas chemical conversion to Mo2C occurs in the exposed chemical vapor deposition-grown MoS2 part, the MoS2 layer under the SiO2 masking layer is protected from chemical conversion, so that a scalable Mo2C/MoS2 heterostructure is integrated down to nanometer-scale dimensions. Excellent contact resistance of 2.1 kΩ·μm is achieved from this lateral junction structure, providing a manufacturable and highly stable metal/semiconductor building block for real implementation of 2D material-based nanoscale device integration.

    Copyright © 2019 American Chemical Society

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    Supporting Information

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    The Supporting Information is available free of charge at https://pubs.acs.org/doi/10.1021/acsami.9b13660.

    • Bright-field and dark-field OM images of the MoS2/Mo2C junction, quantitative analysis of the synthesized Mo2C area with the annealing periods, PL spectra of Mo2C, and EDS element mapping under a SiO2 mask layer (PDF)

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    Cited By

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    This article is cited by 23 publications.

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    ACS Applied Materials & Interfaces

    Cite this: ACS Appl. Mater. Interfaces 2019, 11, 50, 47190–47196
    Click to copy citationCitation copied!
    https://doi.org/10.1021/acsami.9b13660
    Published November 25, 2019
    Copyright © 2019 American Chemical Society
    Request reuse permissions

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