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Area-Selective ALD of Ru on Nanometer-Scale Cu Lines through Dimerization of Amino-Functionalized Alkoxy Silane Passivation Films

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    Research Article

    Area-Selective ALD of Ru on Nanometer-Scale Cu Lines through Dimerization of Amino-Functionalized Alkoxy Silane Passivation Films
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    ACS Applied Materials & Interfaces

    Cite this: ACS Appl. Mater. Interfaces 2020, 12, 4, 4678–4688
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    https://doi.org/10.1021/acsami.9b14596
    Published January 8, 2020
    Copyright © 2020 American Chemical Society
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    Abstract

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    The selective deposition of materials on predefined areas on a substrate is of crucial importance for various applications, such as energy harvesting, microelectronic device fabrication, and catalysis. A representative example of area-confined deposition is the selective deposition of a metal film as the interconnect material in multilevel metallization schemes for CMOS technology. This allows the formation of multilevel structures with standard lithographical techniques while minimizing pattern misalignment and overlay and improving the uniformity of the structures across the wafer. In this work, area-selective deposition of Ru by atomic layer deposition (ALD) is investigated using alkoxy siloxane dielectric passivation layers. In this work, a comparison of several silane organic SAM precursors in terms of Ru ALD ASD performance is reported. The importance of the surface areal concentration of the passivation molecules is demonstrated. According to the in situ X-ray photoelectron spectroscopy film characterization, the ALD blocking layers derived from a (3-trimethoxysilylpropyl) diethylenetriamine (DETA) precursor have the ability to polymerize under ALD-compatible temperatures, such as 250 °C, which leads to a significant inhibition of Ru growth up to 400 ALD cycles. At the same time, the DETA layer can be selectively removed from the oxidized Cu surface by rinsing in acetic acid, which allows selective deposition of ca. 14 nm of Ru on Cu with no Ru detected on the DETA-coated surface by RBS. The approach is successfully tested on 50 nm half-pitch patterned SiO2/Cu lines.

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    The Supporting Information is available free of charge at https://pubs.acs.org/doi/10.1021/acsami.9b14596.

    • Mass, thickness, and water contact angle data for different siloxane precursors tested in this work as well as the DETA layer deposited at different temperatures, in situ XPS profiles of DETA-terminated samples annealed in the presence of oxygen, top-down SEM images of the sample coated by DETA after ALD of Ru performed at different deposition temperatures, carbon content of the ALD Ru film measured by ERD as a function of deposition temperature (PDF)

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    Cited By

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    This article is cited by 27 publications.

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    ACS Applied Materials & Interfaces

    Cite this: ACS Appl. Mater. Interfaces 2020, 12, 4, 4678–4688
    Click to copy citationCitation copied!
    https://doi.org/10.1021/acsami.9b14596
    Published January 8, 2020
    Copyright © 2020 American Chemical Society
    Request reuse permissions

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