Low-Power Complementary Logic Circuit Using Polymer-Electrolyte-Gated Graphene Switching DevicesClick to copy article linkArticle link copied!
- Myungwoo Son*Myungwoo Son*E-mail: [email protected] (M.S.).Photonic Energy Research Center, Korea Photonics Technology Institute (KOPTI), Cheomdanbencheo-ro 108 beon-gil 9, Buk-gu, Gwangju 61007, Republic of KoreaMore by Myungwoo Son
- Hanggyu KimHanggyu KimSchool of Materials Science and Engineering, Gwangju Institute of Science and Technology (GIST), Cheomdangwagi-ro 123, Buk-gu, Gwangju 61005, Republic of KoreaMore by Hanggyu Kim
- Jaewon JangJaewon JangSchool of Earth Sciences and Environmental Engineering, Gwangju Institute of Science and Technology (GIST), Cheomdangwagi-ro 123, Buk-gu, Gwangju 61005, Republic of KoreaMore by Jaewon Jang
- So-Young KimSo-Young KimSchool of Materials Science and Engineering and Center for Emerging Electronic Devices, Gwangju Institute of Science and Technology (GIST), Cheomdangwagi-ro 123, Buk-gu, Gwangju 61005, Republic of KoreaMore by So-Young Kim
- Hyun Chul KiHyun Chul KiPhotonic Energy Research Center, Korea Photonics Technology Institute (KOPTI), Cheomdanbencheo-ro 108 beon-gil 9, Buk-gu, Gwangju 61007, Republic of KoreaMore by Hyun Chul Ki
- Byoung Hun LeeByoung Hun LeeSchool of Materials Science and Engineering and Center for Emerging Electronic Devices, Gwangju Institute of Science and Technology (GIST), Cheomdangwagi-ro 123, Buk-gu, Gwangju 61005, Republic of KoreaMore by Byoung Hun Lee
- In S. KimIn S. KimSchool of Earth Sciences and Environmental Engineering, Gwangju Institute of Science and Technology (GIST), Cheomdangwagi-ro 123, Buk-gu, Gwangju 61005, Republic of KoreaMore by In S. Kim
- Moon-Ho Ham*Moon-Ho Ham*E-mail: [email protected] (M.-H.H.).School of Materials Science and Engineering, Gwangju Institute of Science and Technology (GIST), Cheomdangwagi-ro 123, Buk-gu, Gwangju 61005, Republic of KoreaMore by Moon-Ho Ham
Abstract
The modulation of the electrical properties of graphene and its device configurations for low-power consumption are important in developing graphene-based logic electronics. Here, we demonstrate the change in the charge transport in graphene from ambipolar to unipolar using surface charge transfer doping of the polymer electrolyte. Unipolar graphene field-effect transistors (GFETs) were obtained by the surface treatment of poly(acrylic acid) (PAA) for p-type and poly(ethyleneimine) (PEI) for n-type as polymer-electrolyte gates. In addition, lithium perchlorate (LiClO4) in a polymer matrix can be used for the low-gate voltage operation of GFETs (less than ±3 V) because of its high gating efficiency. Using polymer-electrolyte-gated GFETs, complementary graphene inverters were fabricated with a voltage swing of 57% and maximum voltage gain (Vgain) of 1.1 at a low supply voltage (VDD = 1 V). This is expected to facilitate the development of graphene-based logic devices with low-cost, low-power, and flexible electronics.
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