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Mg-Doped GaAs Nanowires with Enhanced Surface Alloying for Use as Ohmic Contacts in Nanoelectronic Devices

  • Thais Chagas*
    Thais Chagas
    Departamento de Física, Universidade Federal de Minas Gerais, Av. Pres. Antônio Carlos 6627, 31270-901 Belo Horizonte, Brazil
    Department Physik, Universität Siegen, Walter-Flex-Straße 3, 57072 Siegen, Germany
    *Email: [email protected]
    More by Thais Chagas
  • Guilherme A. S. Ribeiro
    Guilherme A. S. Ribeiro
    Departamento de Física, Universidade Federal de Minas Gerais, Av. Pres. Antônio Carlos 6627, 31270-901 Belo Horizonte, Brazil
  • Bárbara L. T. Rosa
    Bárbara L. T. Rosa
    Departamento de Física, Universidade Federal de Minas Gerais, Av. Pres. Antônio Carlos 6627, 31270-901 Belo Horizonte, Brazil
  • Danial Bahrami
    Danial Bahrami
    Department Physik, Universität Siegen, Walter-Flex-Straße 3, 57072 Siegen, Germany
  • Arman Davtyan
    Arman Davtyan
    Department Physik, Universität Siegen, Walter-Flex-Straße 3, 57072 Siegen, Germany
  • Rafael R. Barreto
    Rafael R. Barreto
    Departamento de Física, Universidade Federal de Minas Gerais, Av. Pres. Antônio Carlos 6627, 31270-901 Belo Horizonte, Brazil
  • Juan C. González
    Juan C. González
    Departamento de Física, Universidade Federal de Minas Gerais, Av. Pres. Antônio Carlos 6627, 31270-901 Belo Horizonte, Brazil
  • Rogério Magalhães-Paniago
    Rogério Magalhães-Paniago
    Departamento de Física, Universidade Federal de Minas Gerais, Av. Pres. Antônio Carlos 6627, 31270-901 Belo Horizonte, Brazil
  • , and 
  • Ângelo Malachias
    Ângelo Malachias
    Departamento de Física, Universidade Federal de Minas Gerais, Av. Pres. Antônio Carlos 6627, 31270-901 Belo Horizonte, Brazil
Cite this: ACS Appl. Nano Mater. 2021, 4, 11, 12640–12649
Publication Date (Web):October 19, 2021
https://doi.org/10.1021/acsanm.1c03192
Copyright © 2021 American Chemical Society

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    Abstract

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    In this work, we have investigated the structural and electronic properties of Mg-doped GaAs(111) nanowires synthesized through a vapor–liquid–solid growth mechanism. The crystalline structure of these nanowires was measured using synchrotron X-ray diffraction, while their electronic structure was addressed by scanning tunneling spectroscopy. Scanning tunneling microscopy measurements revealed that conducting Ga2Mg/Mg clusters are observed at {110} nanowire lateral surfaces, allowing electrical contacts with reduced Schottky barriers. This suggests that similar alloyed surfaces can be produced with other dopants, enabling the development of distinct Ohmic contacts in these systems. Density functional theory was used to investigate the electronic response of Ga2Mg. While at room temperature, electronic variable-range hopping drives the nanowires into a metallic behavior, quantum confinement is observed at low temperatures.

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    The Supporting Information is available free of charge at https://pubs.acs.org/doi/10.1021/acsanm.1c03192.

    • SEM image of an NW on HOPG; longitudinal X-ray diffraction scans along the GaAs(111) direction, measured for the ensemble of NWs at the GaAs substrate (nominal concentration of 5.6 × 1018 cm–3); tables containing GaAs-ZB, GaAs-WZ, Mg, Au, Ga2Mg, and AuGa2 X-ray peaks identified in our systems; STM topographic images of NWs on HOPG and height profiles measured along them; and individual I(V) curves of the representative STS measurements (PDF)

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