Bi2O2Se Nanoplates for Lateral Memristor DevicesClick to copy article linkArticle link copied!
- Xi Wan*Xi Wan*Email: [email protected]Engineering Research Center of IoT Technology Applications (Ministry of Education), School of Integrated Circuits, Jiangnan University, Wuxi 214122, ChinaMore by Xi Wan
- Xin WangXin WangEngineering Research Center of IoT Technology Applications (Ministry of Education), School of Integrated Circuits, Jiangnan University, Wuxi 214122, ChinaMore by Xin Wang
- Yingdi YuYingdi YuEngineering Research Center of IoT Technology Applications (Ministry of Education), School of Integrated Circuits, Jiangnan University, Wuxi 214122, ChinaMore by Yingdi Yu
- Tianao LiuTianao LiuEngineering Research Center of IoT Technology Applications (Ministry of Education), School of Integrated Circuits, Jiangnan University, Wuxi 214122, ChinaMore by Tianao Liu
- Mingkang ZhangMingkang ZhangEngineering Research Center of IoT Technology Applications (Ministry of Education), School of Integrated Circuits, Jiangnan University, Wuxi 214122, ChinaMore by Mingkang Zhang
- EnZi ChenEnZi ChenState Key Laboratory of Optoelectronic Materials and Technologies, School of Electronics and Information Technology and Guangdong Province Key Laboratory of Display Material, Sun Yat-sen University, Guangzhou 510275, ChinaMore by EnZi Chen
- Kun Chen*Kun Chen*Email: [email protected]State Key Laboratory of Optoelectronic Materials and Technologies, School of Electronics and Information Technology and Guangdong Province Key Laboratory of Display Material, Sun Yat-sen University, Guangzhou 510275, ChinaMore by Kun Chen
- Shuting WangShuting WangEngineering Research Center of IoT Technology Applications (Ministry of Education), School of Integrated Circuits, Jiangnan University, Wuxi 214122, ChinaMore by Shuting Wang
- Feng ShaoFeng ShaoEngineering Research Center of IoT Technology Applications (Ministry of Education), School of Integrated Circuits, Jiangnan University, Wuxi 214122, ChinaMore by Feng Shao
- Xiaofeng GuXiaofeng GuEngineering Research Center of IoT Technology Applications (Ministry of Education), School of Integrated Circuits, Jiangnan University, Wuxi 214122, ChinaMore by Xiaofeng Gu
- Jianbin XuJianbin XuShenzhen Research Institute, The Chinese University of Hong Kong, Shenzhen 518057, ChinaDepartment of Electronic Engineering and Materials Science and Technology Research Center, The Chinese University of Hong Kong, Shatin, N.T., Hong Kong SAR 999077, P. R. ChinaMore by Jianbin Xu
Abstract

Bi2O2Se has emerged as a promising 2D semiconductor for a wide range of applications, including 2D FinFETs and neuromorphic computing, due to its high carrier mobility and stability. However, precise control over Bi2O2Se thickness and the growth of both in-plane and vertical orientations on mica substrates remains a significant challenge. In this study, we report a highly controllable synthesis of Bi2O2Se nanoplates (approximately 5 to 250 nm) using an inner tube-assisted chemical vapor deposition (CVD) method. By optimizing the inner tube dimensions and growth conditions, we successfully synthesized high-quality Bi2O2Se nanoplates with enhanced control over nucleation density, lateral dimensions, and growth orientation (both in-plane and vertical), making them suitable for advanced electronic applications. The resulting nanoplates exhibit excellent crystallinity, uniform thickness, and superior electronic properties, including high carrier mobility up to 127 cm2/V·s. The Bi2O2Se-based memristors exhibit an endurance of over 28,000 cycles and a fast set/reset time of 400 μs, making them highly suitable for energy-efficient computing and memory applications. The ability to achieve both in-plane and vertical growth orientations enables the design of advanced device architectures. Overall, this inner tube-assisted method offers a scalable and effective approach for the development of next-generation 2D electronics.
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