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Bi2O2Se Nanoplates for Lateral Memristor Devices
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    Bi2O2Se Nanoplates for Lateral Memristor Devices
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    • Xi Wan*
      Xi Wan
      Engineering Research Center of IoT Technology Applications (Ministry of Education), School of Integrated Circuits, Jiangnan University, Wuxi 214122, China
      *Email: [email protected]
      More by Xi Wan
    • Xin Wang
      Xin Wang
      Engineering Research Center of IoT Technology Applications (Ministry of Education), School of Integrated Circuits, Jiangnan University, Wuxi 214122, China
      More by Xin Wang
    • Yingdi Yu
      Yingdi Yu
      Engineering Research Center of IoT Technology Applications (Ministry of Education), School of Integrated Circuits, Jiangnan University, Wuxi 214122, China
      More by Yingdi Yu
    • Tianao Liu
      Tianao Liu
      Engineering Research Center of IoT Technology Applications (Ministry of Education), School of Integrated Circuits, Jiangnan University, Wuxi 214122, China
      More by Tianao Liu
    • Mingkang Zhang
      Mingkang Zhang
      Engineering Research Center of IoT Technology Applications (Ministry of Education), School of Integrated Circuits, Jiangnan University, Wuxi 214122, China
    • EnZi Chen
      EnZi Chen
      State Key Laboratory of Optoelectronic Materials and Technologies, School of Electronics and Information Technology and Guangdong Province Key Laboratory of Display Material, Sun Yat-sen University, Guangzhou 510275, China
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    • Kun Chen*
      Kun Chen
      State Key Laboratory of Optoelectronic Materials and Technologies, School of Electronics and Information Technology and Guangdong Province Key Laboratory of Display Material, Sun Yat-sen University, Guangzhou 510275, China
      *Email: [email protected]
      More by Kun Chen
    • Shuting Wang
      Shuting Wang
      Engineering Research Center of IoT Technology Applications (Ministry of Education), School of Integrated Circuits, Jiangnan University, Wuxi 214122, China
      More by Shuting Wang
    • Feng Shao
      Feng Shao
      Engineering Research Center of IoT Technology Applications (Ministry of Education), School of Integrated Circuits, Jiangnan University, Wuxi 214122, China
      More by Feng Shao
    • Xiaofeng Gu
      Xiaofeng Gu
      Engineering Research Center of IoT Technology Applications (Ministry of Education), School of Integrated Circuits, Jiangnan University, Wuxi 214122, China
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    • Jianbin Xu
      Jianbin Xu
      Shenzhen Research Institute, The Chinese University of Hong Kong, Shenzhen 518057, China
      Department of Electronic Engineering and Materials Science and Technology Research Center, The Chinese University of Hong Kong, Shatin, N.T., Hong Kong SAR 999077, P. R. China
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    ACS Applied Nano Materials

    Cite this: ACS Appl. Nano Mater. 2025, 8, 5, 2260–2268
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    https://doi.org/10.1021/acsanm.4c06250
    Published January 30, 2025
    Copyright © 2025 American Chemical Society

    Abstract

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    Bi2O2Se has emerged as a promising 2D semiconductor for a wide range of applications, including 2D FinFETs and neuromorphic computing, due to its high carrier mobility and stability. However, precise control over Bi2O2Se thickness and the growth of both in-plane and vertical orientations on mica substrates remains a significant challenge. In this study, we report a highly controllable synthesis of Bi2O2Se nanoplates (approximately 5 to 250 nm) using an inner tube-assisted chemical vapor deposition (CVD) method. By optimizing the inner tube dimensions and growth conditions, we successfully synthesized high-quality Bi2O2Se nanoplates with enhanced control over nucleation density, lateral dimensions, and growth orientation (both in-plane and vertical), making them suitable for advanced electronic applications. The resulting nanoplates exhibit excellent crystallinity, uniform thickness, and superior electronic properties, including high carrier mobility up to 127 cm2/V·s. The Bi2O2Se-based memristors exhibit an endurance of over 28,000 cycles and a fast set/reset time of 400 μs, making them highly suitable for energy-efficient computing and memory applications. The ability to achieve both in-plane and vertical growth orientations enables the design of advanced device architectures. Overall, this inner tube-assisted method offers a scalable and effective approach for the development of next-generation 2D electronics.

    Copyright © 2025 American Chemical Society

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    Supporting Information

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    The Supporting Information is available free of charge at https://pubs.acs.org/doi/10.1021/acsanm.4c06250.

    • Effect of precursor mass on the properties of the synthesized Bi2O2Se nanoplates; effect of growth distance from the Bi2O3 precursor to the substrate on the properties of the synthesized Bi2O2Se nanoplates; effect of growth time on the properties of the synthesized Bi2O2Se nanoplates; images showing the promotion of vertical epitaxial growth on reducing the substrate temperature to 630–650 °C; SEM image of the vertical architectures of Bi2O2Se samples; SEM characterization of Bi2O2Se samples on mica; polystyrene (PS)-assisted transfer process; SEM characterization of the Bi2O2Se sample transferred on a SiO2/Si substrate; Raman, PL, and XRD characterization of the Bi2O2Se sample; AFM characterization of Bi2O2Se for device applications; and Bi2O2Se-based FETs (PDF)

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    ACS Applied Nano Materials

    Cite this: ACS Appl. Nano Mater. 2025, 8, 5, 2260–2268
    Click to copy citationCitation copied!
    https://doi.org/10.1021/acsanm.4c06250
    Published January 30, 2025
    Copyright © 2025 American Chemical Society

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