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Correction to “The Role of the Metal Element in Layered Metal Phosphorus Triselenides upon Their Electrochemical Sensing and Energy Applications”

Cite this: ACS Catal. 2020, 10, 12, 6975–6976
Publication Date (Web):June 11, 2020
https://doi.org/10.1021/acscatal.0c01943

Copyright © 2020 American Chemical Society. This publication is available under these Terms of Use.

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Supporting Info (1)»
The authors found in the printed version of the above article unintentional mistakes in the XPS deconvolution shown in Figure 5. Positions and proportions of peak areas have been corrected for P 2p and Se 3d. For Se 3d, a new pair of peaks were added at higher binding energies, considering the Se–O binding. For the metal elements, the assignation of peaks was also revised for Mn 2p and Zn 2p core levels. Because of the new XPS deconvolution, mentions of MnO2 elsewhere in the text are removed.
An unrelated error was found in the offset factor of the potential X-axis of Figures 11A and 11B, and Figure S7C in the Supporting Information, describing oxygen evolution reaction (OER), has also been corrected. This change does not alter the order of OER performance for MPSe3 and general conclusions.
Information concerning energy used in EDX mapping of elements is missing in the original Experimental Section, included here.
The correct version of the figures, table, and the accompanying text follows.
Pages 8162–8163: The peaks of the metallic component of CrPSe3, MnPSe3, FePSe3, and CdPSe3 can be assigned each metallic element in the M2+ oxidation state, Cr 2p(3/2 and 1/2), Mn 2p3/2, Fe 2p(3/2 and 1/2), and Cd 3d(5/2 and 3/2) respectively. In the Mn 2p core-level spectrum, the Mn 2p3/2 component is accompanied by a satellite peak at slightly higher binding energy. In contrast, the peaks developed for SnPSe3 show both the metallic phase (Sn 3d(5/2 and 3/2)) and partial oxidation to SnO2 (Sn 3d(5/2 and 3/2)) at higher binding energies. Similarly, for the Zn 2p core level, the metallic phase peaks manifested by Zn 2p3/2 and Zn 2p1/2 in the M2+ oxidation state were found in the presence of an additional pair of peaks, assigned to Zn binding to SeOx oxides, either in ZnSeO3 or ZnSeO4 form.
The partial oxidation was more evident for the [P2Se6]4– units, expressed in the P 2p and Se 3d core levels. On one hand, two deconvolved contributions that correspond to P 2p regions are observed for all materials (see Table S2 in the Supporting Information); the average position of P 2p3/2 and P 2p1/2 are 129.9 and 130.8 eV for all MPSe3. (1) Nevertheless, in all materials, an additional peak was observed, thus referring to P–O bonding with an average position of 132.8 eV, (2,3) due to partial oxidation of the layered material at the exposed surface. (4) CdPSe3 and SnPSe3 have the P–O peak with a relatively lower intensity. Finally, two deconvoluted peaks appear in the Se 3d region for all MPSe3 (Table S2). The peaks correspond to Se 3d5/2 and Se 3d3/2 with average positions of 54.0 and 54.8 eV, respectively. (5) At higher binding energies, the second pair of peaks were assigned to Se–O binding. (6)
In accordance with the corrections done to the XPS deconvolution in Figure 5, the values in Table S2 are updated. In Figure S7C, the factor of correction was also applied to the potential X-axis (see Supporting Information).
The correct version of Figure 5 appears as follows.

Figure 5

Figure 5. High-resolution X-ray photoelectron spectrum and peak deconvolution of the respective metal element (Cr 2p, Mn 2p, Fe 2p, Zn 2p, Cd 3d, and Sn 3d), P 2p, and Se 3d regions of MPSe3 layered materials.

Pages 8167–8168. In the paragraph that begins with “Oxygen evolution reaction electrolysis represents...”, the fifth sentence should read “The polarization curves performed in alkaline media are shown in Figure 11A”. The following text related to Figures 11A and 11B should read as follows: for FePSe3 instead of “+1.8 V vs. RHE”, this text should read “+2.2 V vs RHE”; for Pt, instead of “+1.3 V vs RHE”, this text should read “+1.9 V vs. RHE”; and for the remaining MPSe3 having “ca. +1.8 V vs RHE”, this text should read “ca. +2.4 V vs RHE”.

Figure 11

Figure 11. LSV for OER polarization curves in 1.0 M KOH (A) and the average onset potential at a current density of 15 mA/cm2 (B)....

Page 8169. Text in the third subsection of the Experimental Section should read as follows.

Experimental Section

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Structural and Morphological Characterization. Energy-dispersive X-ray spectroscopy data were obtained using an accelerating voltage of 15.0 kV.
The authors would like to apologize for any inconvenience caused by these errors.

Supporting Information

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The Supporting Information is available free of charge at https://pubs.acs.org/doi/10.1021/acscatal.0c01943

  • Corrections to Table S2 and Figure S7C (PDF)

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Most electronic Supporting Information files are available without a subscription to ACS Web Editions. Such files may be downloaded by article for research use (if there is a public use license linked to the relevant article, that license may permit other uses). Permission may be obtained from ACS for other uses through requests via the RightsLink permission system: http://pubs.acs.org/page/copyright/permissions.html.

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References

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This article references 6 other publications.

  1. 1
    Lau, W. M. In Situ X-Ray Photoelectron Spectroscopic Study of Remote Plasma Enhanced Chemical Vapor Deposition of Silicon Nitride on Sulfide Passivated InP. J. Vac. Sci. Technol., B: Microelectron. Process. Phenom. 1990, 8 (4), 848,  DOI: 10.1116/1.584977
  2. 2
    Qi, Z.; Lee, W. XPS Study of CMP Mechanisms of NiP Coating for Hard Disk Drive Substrates. Tribol. Int. 2010, 43 (4), 810814,  DOI: 10.1016/j.triboint.2009.11.007
  3. 3
    Dake, L. S.; Baer, D. R.; Friedrich, D. M. Auger Parameter Measurements of Phosphorus Compounds for Characterization of Phosphazenes. J. Vac. Sci. Technol., A 1989, 7 (3), 16341638,  DOI: 10.1116/1.576062
  4. 4
    Gusmão, R.; Sofer, Z.; Pumera, M. Black Phosphorus Rediscovered: From Bulk Material to Monolayers. Angew. Chem., Int. Ed. 2017, 56 (28), 80528072,  DOI: 10.1002/anie.201610512
  5. 5
    Mårtensson, N.; Reihl, B.; Vogt, O. Binding Energies and Heat-of-Formation Data for USbxTe1-x and UAsxSe1-x Compounds as Derived from Photoelectron Spectroscopy. Phys. Rev. B: Condens. Matter Mater. Phys. 1982, 25 (2), 824829,  DOI: 10.1103/PhysRevB.25.824
  6. 6
    Iwakuro, H.; Ichimura, S. XPS and AES Studies on the Oxidation of Layered Semiconductor Gase. Jpn. J. Appl. Phys., Part 1 1982, 21 (No. 1), 9499,  DOI: 10.1143/JJAP.21.94

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  • Figure 5

    Figure 5. High-resolution X-ray photoelectron spectrum and peak deconvolution of the respective metal element (Cr 2p, Mn 2p, Fe 2p, Zn 2p, Cd 3d, and Sn 3d), P 2p, and Se 3d regions of MPSe3 layered materials.

    Figure 11

    Figure 11. LSV for OER polarization curves in 1.0 M KOH (A) and the average onset potential at a current density of 15 mA/cm2 (B)....

  • References

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    This article references 6 other publications.

    1. 1
      Lau, W. M. In Situ X-Ray Photoelectron Spectroscopic Study of Remote Plasma Enhanced Chemical Vapor Deposition of Silicon Nitride on Sulfide Passivated InP. J. Vac. Sci. Technol., B: Microelectron. Process. Phenom. 1990, 8 (4), 848,  DOI: 10.1116/1.584977
    2. 2
      Qi, Z.; Lee, W. XPS Study of CMP Mechanisms of NiP Coating for Hard Disk Drive Substrates. Tribol. Int. 2010, 43 (4), 810814,  DOI: 10.1016/j.triboint.2009.11.007
    3. 3
      Dake, L. S.; Baer, D. R.; Friedrich, D. M. Auger Parameter Measurements of Phosphorus Compounds for Characterization of Phosphazenes. J. Vac. Sci. Technol., A 1989, 7 (3), 16341638,  DOI: 10.1116/1.576062
    4. 4
      Gusmão, R.; Sofer, Z.; Pumera, M. Black Phosphorus Rediscovered: From Bulk Material to Monolayers. Angew. Chem., Int. Ed. 2017, 56 (28), 80528072,  DOI: 10.1002/anie.201610512
    5. 5
      Mårtensson, N.; Reihl, B.; Vogt, O. Binding Energies and Heat-of-Formation Data for USbxTe1-x and UAsxSe1-x Compounds as Derived from Photoelectron Spectroscopy. Phys. Rev. B: Condens. Matter Mater. Phys. 1982, 25 (2), 824829,  DOI: 10.1103/PhysRevB.25.824
    6. 6
      Iwakuro, H.; Ichimura, S. XPS and AES Studies on the Oxidation of Layered Semiconductor Gase. Jpn. J. Appl. Phys., Part 1 1982, 21 (No. 1), 9499,  DOI: 10.1143/JJAP.21.94
  • Supporting Information

    Supporting Information

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    The Supporting Information is available free of charge at https://pubs.acs.org/doi/10.1021/acscatal.0c01943

    • Corrections to Table S2 and Figure S7C (PDF)


    Terms & Conditions

    Most electronic Supporting Information files are available without a subscription to ACS Web Editions. Such files may be downloaded by article for research use (if there is a public use license linked to the relevant article, that license may permit other uses). Permission may be obtained from ACS for other uses through requests via the RightsLink permission system: http://pubs.acs.org/page/copyright/permissions.html.

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