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Phase Transition in a Memristive Suspended MoS2 Monolayer Probed by Opto- and Electro-Mechanics

  • Julien Chaste*
    Julien Chaste
    Université Paris-Saclay, CNRS, Centre de Nanosciences et de Nanotechnologies, 91120, Palaiseau, France
    *Email: [email protected]
  • Imen Hnid
    Imen Hnid
    Université Paris-Saclay, CNRS, Centre de Nanosciences et de Nanotechnologies, 91120, Palaiseau, France
    More by Imen Hnid
  • Lama Khalil
    Lama Khalil
    Université Paris-Saclay, CNRS, Centre de Nanosciences et de Nanotechnologies, 91120, Palaiseau, France
    More by Lama Khalil
  • Chen Si
    Chen Si
    School of Materials Science and Engineering, Beihang University, Beijing 100191, China
    More by Chen Si
  • Alan Durnez
    Alan Durnez
    Université Paris-Saclay, CNRS, Centre de Nanosciences et de Nanotechnologies, 91120, Palaiseau, France
    More by Alan Durnez
  • Xavier Lafosse
    Xavier Lafosse
    Université Paris-Saclay, CNRS, Centre de Nanosciences et de Nanotechnologies, 91120, Palaiseau, France
  • Meng-Qiang Zhao
    Meng-Qiang Zhao
    Department of Physics and Astronomy, University of Pennsylvania, 209S 33rd Street, Philadelphia, Pennsylvania 19104, United States
  • A. T. Charlie Johnson
    A. T. Charlie Johnson
    Department of Physics and Astronomy, University of Pennsylvania, 209S 33rd Street, Philadelphia, Pennsylvania 19104, United States
  • Shengbai Zhang
    Shengbai Zhang
    Department of Physics, Applied Physics, & Astronomy, Rensselaer Polytechnic Institute, Troy, New York 12180, United States
  • Junhyeok Bang*
    Junhyeok Bang
    Department of Physics, Chungbuk National University, Cheongju 28644, Republic of Korea
    *Email (for theory): [email protected]
  • , and 
  • Abdelkarim Ouerghi
    Abdelkarim Ouerghi
    Université Paris-Saclay, CNRS, Centre de Nanosciences et de Nanotechnologies, 91120, Palaiseau, France
Cite this: ACS Nano 2020, 14, 10, 13611–13618
Publication Date (Web):October 15, 2020
https://doi.org/10.1021/acsnano.0c05721
Copyright © 2020 American Chemical Society

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    Abstract

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    Semiconducting monolayers of a 2D material are able to concatenate multiple interesting properties into a single component. Here, by combining opto-mechanical and electronic measurements, we demonstrate the presence of a partial 2H–1T′ phase transition in a suspended 2D monolayer membrane of MoS2. Electronic transport shows unexpected memristive properties in the MoS2 membrane, in the absence of any external dopants. A strong mechanical softening of the membrane is measured concurrently and may only be related to the 2H–1T′ phase transition, which imposes a 3% directional elongation of the topological 1T′ phase with respect to the semiconducting 2H. We note that only a few percent 2H–1T′ phase switching is sufficient to observe measurable memristive effects. Our experimental results combined with first-principles total energy calculations indicate that sulfur vacancy diffusion plays a key role in the initial nucleation of the phase transition. Our study clearly shows that nanomechanics represents an ultrasensitive technique to probe the crystal phase transition in 2D materials or thin membranes. Finally, a better control of the microscopic mechanisms responsible for the observed memristive effect in MoS2 is important for the implementation of future devices.

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    The Supporting Information is available free of charge at https://pubs.acs.org/doi/10.1021/acsnano.0c05721.

    • Additional measurements on the memristive effect and PPC with some models, a description of the movement equation of the resonator, and a more complete discussion on the origin of the observed mechanical softening (PDF)

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    Cited By

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    2. Han Lin, Zhenfang Zhang, Huihui Zhang, Keng-Te Lin, Xiaoming Wen, Yao Liang, Yang Fu, Alan Kin Tak Lau, Tianyi Ma, Cheng-Wei Qiu, Baohua Jia. Engineering van der Waals Materials for Advanced Metaphotonics. Chemical Reviews 2022, 122 (19) , 15204-15355. https://doi.org/10.1021/acs.chemrev.2c00048
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