Mechanism of 2D Materials’ Seamless Coalescence on a Liquid Substrate
- Li-Ping DingLi-Ping DingCenter for Multidimensional Carbon Materials, Institute for Basic Science (IBS), Ulsan 44919, Republic of KoreaDepartment of Optoelectronic Science & Technology, School of Electronic Information and Artificial Intelligence, Shaanxi University of Science & Technology, Xi’an 710021, ChinaMore by Li-Ping Ding
- ,
- Peng ShaoPeng ShaoCenter for Multidimensional Carbon Materials, Institute for Basic Science (IBS), Ulsan 44919, Republic of KoreaDepartment of Optoelectronic Science & Technology, School of Electronic Information and Artificial Intelligence, Shaanxi University of Science & Technology, Xi’an 710021, ChinaMore by Peng Shao
- , and
- Feng Ding*Feng Ding*E-mail: [email protected]Center for Multidimensional Carbon Materials, Institute for Basic Science (IBS), Ulsan 44919, Republic of KoreaDepartment of Materials Science and Engineering, Ulsan National Institute of Science and Technology (UNIST), Ulsan 44919, Republic of KoreaMore by Feng Ding
Abstract
The seamless coalescence of parallelly aligned 2D materials is the primary route toward the synthesis of wafer-scale single crystals (WSSCs) of 2D materials. The epitaxial growth of various 2D materials on a single-crystal substrate, which is an essential condition of the seamless coalescence approach, has been extensively explored in previous studies. Here, by using hexagonal boron nitride (hBN) growth on a liquid gold surface as an example, we demonstrate that growth of WSSCs of 2D materials via the seamless coalescence of self-aligned 2D islands on a liquid substrate is possible. Here we show that, in the presence of hydrogen, all the hBN edges tend to be hydrogen terminated and the coalescence of hBN islands occurs only if their crystallographic lattices of neighboring hBN islands are aligned parallelly. The mechanism of hBN self-alignment revealed in this study implies that, under the optimum experimental condition, the seamless coalescence of 2D materials on a liquid substrate is possible and thus provides guidance for synthesizing WSSCs of various 2D materials by using liquid phase substrates.
Cited By
This article is cited by 6 publications.
- Xiahong Zhou, Xudong Xue, Le Cai, Shan Liu, Mengya Liu, Gui Yu. Large-Area Orientation-Controlled Growth of Hexagonal Boron Nitride on Liquid Copper. ACS Applied Electronic Materials 2022, 4
(12)
, 6261-6268. https://doi.org/10.1021/acsaelm.2c01367
- Wenjing Zhao, Junyi Zhu. Kinetics effect of hydrogen passivation on the zigzag edge growth of h-BN. Journal of Applied Physics 2023, 133
(7)
, 074302. https://doi.org/10.1063/5.0131413
- Geonwoo Kim, Dongbeom Kim, Yoonsun Choi, Arup Ghorai, Gyeongbae Park, Unyong Jeong. New Approaches to Produce Large‐Area Single Crystal Thin Films. Advanced Materials 2023, 35
(4)
, 2203373. https://doi.org/10.1002/adma.202203373
- Weihua Wang, Benjian Liu, Leining Zhang, Jiecai Han, Kang Liu, Bing Dai, Jiaqi Zhu. Heteroepitaxy of diamond semiconductor on iridium: a review. Functional Diamond 2022, 2
(1)
, 215-235. https://doi.org/10.1080/26941112.2022.2162348
- Athanasios Dimoulas. Perspectives for the Growth of Epitaxial 2D van der Waals Layers with an Emphasis on Ferromagnetic Metals for Spintronics. Advanced Materials Interfaces 2022, 9
(36)
, 2201469. https://doi.org/10.1002/admi.202201469
- Mojtaba Gholami, Zahra Golsanamlou, H. Rahimpour Soleimani. Effects of 3d transition metal impurities and vacancy defects on electronic and magnetic properties of pentagonal Pd2S4: competition between exchange splitting and crystal fields. Scientific Reports 2022, 12
(1)
https://doi.org/10.1038/s41598-022-14780-z