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Robust Electronic Structure of Manganite-Buffered Oxide Interfaces with Extreme Mobility Enhancement

  • Hang Li
    Hang Li
    Department of Energy Conversion and Storage, Technical University of Denmark, 2800 Kgs. Lyngby, Denmark
    Swiss Light Source, Paul Scherrer Institute, 5232 Villigen, PSI, Switzerland
    More by Hang Li
  • Yulin Gan
    Yulin Gan
    Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, 100190 Beijing, China
    More by Yulin Gan
  • Marius-Adrian Husanu
    Marius-Adrian Husanu
    National Institute of Materials Physics, Atomistilor 405A, 077125 Magurele, Romania
  • Rasmus Tindal Dahm
    Rasmus Tindal Dahm
    Department of Energy Conversion and Storage, Technical University of Denmark, 2800 Kgs. Lyngby, Denmark
  • Dennis Valbjørn Christensen
    Dennis Valbjørn Christensen
    Department of Energy Conversion and Storage, Technical University of Denmark, 2800 Kgs. Lyngby, Denmark
  • Milan Radovic
    Milan Radovic
    Swiss Light Source, Paul Scherrer Institute, 5232 Villigen, PSI, Switzerland
  • Jirong Sun
    Jirong Sun
    Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, 100190 Beijing, China
    More by Jirong Sun
  • Ming Shi
    Ming Shi
    Swiss Light Source, Paul Scherrer Institute, 5232 Villigen, PSI, Switzerland
    More by Ming Shi
  • Baogen Shen
    Baogen Shen
    Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, 100190 Beijing, China
    More by Baogen Shen
  • Nini Pryds*
    Nini Pryds
    Department of Energy Conversion and Storage, Technical University of Denmark, 2800 Kgs. Lyngby, Denmark
    *Email: [email protected]
    More by Nini Pryds
  • , and 
  • Yunzhong Chen*
    Yunzhong Chen
    Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, 100190 Beijing, China
    *Email: [email protected]
Cite this: ACS Nano 2022, 16, 4, 6437–6443
Publication Date (Web):March 21, 2022
https://doi.org/10.1021/acsnano.2c00609
Copyright © 2022 American Chemical Society

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    Abstract

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    The electronic structure as well as the mechanism underlying the high-mobility two-dimensional electron gases (2DEGs) at complex oxide interfaces remain elusive. Herein, using soft X-ray angle-resolved photoemission spectroscopy (ARPES), we present the band dispersion of metallic states at buffered LaAlO3/SrTiO3 (LAO/STO) heterointerfaces where a single-unit-cell LaMnO3 (LMO) spacer not only enhances the electron mobility but also renders the electronic structure robust toward X-ray radiation. By tracing the evolution of band dispersion, orbital occupation, and electron–phonon interaction of the interfacial 2DEG, we find unambiguous evidence that the insertion of the LMO buffer strongly suppresses both the formation of oxygen vacancies as well as the electron–phonon interaction on the STO side. The latter effect makes the buffered sample different from any other STO-based interfaces and may explain the maximum mobility enhancement achieved at buffered oxide interfaces.

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    The Supporting Information is available free of charge at https://pubs.acs.org/doi/10.1021/acsnano.2c00609.

    • Additional data, including summary of EPI strength (Z0), concentration of the oxygen vacancies (nOV), Fermi momenta (kF) of dxy and dyz bands, carrier density (ns), and carrier mobility (μ) of the studied samples; photon-energy-dependent result; XPS of Ti 2p orbitals of a-LAO/STO and a-LAO/LMO/STO; irradiation-dependent OV-states in a-LAO/LMO/STO and a-LAO/STO; extraction of kF; ARPES result of a-LAO/LMO/STO with 2 uc LMO buffer layer (PDF)

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    Cited By

    This article is cited by 2 publications.

    1. Hang Yin, Shuanhu Wang, Kexin Jin. Enhanced Rashba Spin Orbit Coupling and Magnetic Behavior at Oxide Heterointerfaces by Optical Gating. The Journal of Physical Chemistry Letters 2023, 14 (38) , 8684-8690. https://doi.org/10.1021/acs.jpclett.3c01811
    2. Ruishu Yang, Yuqiang Gao, Shuanhu Wang, Kexin Jin. High-Mobility Magnetic Two-Dimensional Electron Gas in Engineered Oxide Interfaces. ACS Applied Materials & Interfaces 2023, 15 (1) , 2376-2383. https://doi.org/10.1021/acsami.2c17638

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