Waveguide-Integrated MoTe2p–i–n Homojunction PhotodetectorClick to copy article linkArticle link copied!
- Chen LiChen LiKey Laboratory of Light Field Manipulation and Information Acquisition, Ministry of Industry and Information Technology, and Shaanxi Key Laboratory of Optical Information Technology, School of Physical Science and Technology, Northwestern Polytechnical University, Xi’an710129, ChinaMore by Chen Li
- Ruijuan TianRuijuan TianKey Laboratory of Light Field Manipulation and Information Acquisition, Ministry of Industry and Information Technology, and Shaanxi Key Laboratory of Optical Information Technology, School of Physical Science and Technology, Northwestern Polytechnical University, Xi’an710129, ChinaMore by Ruijuan Tian
- Xiaoqing ChenXiaoqing ChenKey Laboratory of Light Field Manipulation and Information Acquisition, Ministry of Industry and Information Technology, and Shaanxi Key Laboratory of Optical Information Technology, School of Physical Science and Technology, Northwestern Polytechnical University, Xi’an710129, ChinaMore by Xiaoqing Chen
- Linpeng GuLinpeng GuKey Laboratory of Light Field Manipulation and Information Acquisition, Ministry of Industry and Information Technology, and Shaanxi Key Laboratory of Optical Information Technology, School of Physical Science and Technology, Northwestern Polytechnical University, Xi’an710129, ChinaMore by Linpeng Gu
- Zhengdong LuoZhengdong LuoWide Bandgap Semiconductor Technology Disciplines State Key Laboratory, School of Microelectronics, Xidian University, Xi’an710071, ChinaMore by Zhengdong Luo
- Qiao ZhangQiao ZhangKey Laboratory of Light Field Manipulation and Information Acquisition, Ministry of Industry and Information Technology, and Shaanxi Key Laboratory of Optical Information Technology, School of Physical Science and Technology, Northwestern Polytechnical University, Xi’an710129, ChinaMore by Qiao Zhang
- Ruixuan YiRuixuan YiKey Laboratory of Light Field Manipulation and Information Acquisition, Ministry of Industry and Information Technology, and Shaanxi Key Laboratory of Optical Information Technology, School of Physical Science and Technology, Northwestern Polytechnical University, Xi’an710129, ChinaMore by Ruixuan Yi
- Zhiwen LiZhiwen LiKey Laboratory of Light Field Manipulation and Information Acquisition, Ministry of Industry and Information Technology, and Shaanxi Key Laboratory of Optical Information Technology, School of Physical Science and Technology, Northwestern Polytechnical University, Xi’an710129, ChinaMore by Zhiwen Li
- Biqiang JiangBiqiang JiangKey Laboratory of Light Field Manipulation and Information Acquisition, Ministry of Industry and Information Technology, and Shaanxi Key Laboratory of Optical Information Technology, School of Physical Science and Technology, Northwestern Polytechnical University, Xi’an710129, ChinaMore by Biqiang Jiang
- Yan LiuYan LiuWide Bandgap Semiconductor Technology Disciplines State Key Laboratory, School of Microelectronics, Xidian University, Xi’an710071, ChinaMore by Yan Liu
- Andres Castellanos-GomezAndres Castellanos-GomezMaterials Science Factory, Instituto de Ciencia de Materiales de Madrid (ICMM-CSIC), MadridE-28049, SpainMore by Andres Castellanos-Gomez
- Soo-Jin ChuaSoo-Jin ChuaDepartment of Electrical and Computer Engineering, National University of Singapore, 4 Engineering Drive 3, 117583, SingaporeLEES Program, Singapore-MIT Alliance for Research & Technology (SMART), 1 CREATE Way, #10-01 CREATE Tower, 138602, SingaporeMore by Soo-Jin Chua
- Xiaomu WangXiaomu WangSchool of Electronic Science and Engineering, Nanjing University, Nanjing210093, ChinaMore by Xiaomu Wang
- Zhipei SunZhipei SunDepartment of Electronics and Nanoengineering and QTF Centre of Excellence, Aalto University, AaltoFI-00076, FinlandMore by Zhipei Sun
- Jianlin ZhaoJianlin ZhaoKey Laboratory of Light Field Manipulation and Information Acquisition, Ministry of Industry and Information Technology, and Shaanxi Key Laboratory of Optical Information Technology, School of Physical Science and Technology, Northwestern Polytechnical University, Xi’an710129, ChinaMore by Jianlin Zhao
- Xuetao Gan*Xuetao Gan*Email: [email protected]Key Laboratory of Light Field Manipulation and Information Acquisition, Ministry of Industry and Information Technology, and Shaanxi Key Laboratory of Optical Information Technology, School of Physical Science and Technology, Northwestern Polytechnical University, Xi’an710129, ChinaMore by Xuetao Gan
Abstract
Two-dimensional (2D) materials, featuring distinctive electronic and optical properties and dangling-bond-free surfaces, are promising for developing high-performance on-chip photodetectors in photonic integrated circuits. However, most of the previously reported devices operating in the photoconductive mode suffer from a high dark current or a low responsivity. Here, we demonstrate a MoTe2p–i–n homojunction fabricated directly on a silicon photonic crystal (PC) waveguide, which enables on-chip photodetection with ultralow dark current, high responsivity, and fast response speed. The adopted silicon PC waveguide is electrically split into two individual back gates to selectively dope the top regions of the MoTe2 channel in p- or n-types. High-quality reconfigurable MoTe2 (p–i–n, n–i–p, n–i–n, p–i–p) homojunctions are realized successfully, presenting rectification behaviors with ideality factors approaching 1.0 and ultralow dark currents less than 90 pA. Waveguide-assisted MoTe2 absorption promises a sensitive photodetection in the telecommunication O-band from 1260 to 1340 nm, though it is close to MoTe2’s absorption band-edge. A competitive photoresponsivity of 0.4 A/W is realized with a light on/off current ratio exceeding 104 and a record-high normalized photocurrent-to-dark-current ratio of 106 mW–1. The ultrasmall capacitance of p–i–n homojunction and high carrier mobility of MoTe2 promise a high dynamic response bandwidth close to 34.0 GHz. The proposed device geometry has the advantages of employing a silicon PC waveguide as the back gates to build a 2D material p–i–n homojunction directly and simultaneously to enhance light–2D material interaction. It provides a potential pathway to develop 2D material-based photodetectors, laser diodes, and electro-optic modulators on silicon photonic chips.
Cited By
This article is cited by 6 publications.
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- Guo Yi Huang, Yabin Hao, Shi Qi Li, Yi Ding Jia, Jin Chuan Guo, Han Zhang, Bing Wang. Recent progress in waveguide-integrated photodetectors based on 2D materials for infrared detection. Journal of Physics D: Applied Physics 2023, 56
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- Huaxin Yi, Yuhang Ma, Qiaojue Ye, Jianting Lu, Wan Wang, Zhaoqiang Zheng, Churong Ma, Jiandong Yao, Guowei Yang. Promoting 2D Material Photodetectors by Optical Antennas beyond Noble Metals. Advanced Sensor Research 2023, 36 , 2200079. https://doi.org/10.1002/adsr.202200079
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