Single Atomic Defect Conductivity for Selective Dilute Impurity Imaging in 2D SemiconductorsClick to copy article linkArticle link copied!
- Nam Thanh Trung VuNam Thanh Trung VuPhysics Department, National University of Singapore, Singapore 117551, SingaporeMore by Nam Thanh Trung Vu
- Leyi LohLeyi LohPhysics Department, National University of Singapore, Singapore 117551, SingaporeDepartment of Materials Science and Engineering, National University of Singapore, 9 Engineering Drive 1, Singapore 117575, SingaporeMore by Leyi Loh
- Yuan ChenYuan ChenChemistry Department, National University of Singapore, Singapore 117543, SingaporeMore by Yuan Chen
- Qingyun WuQingyun WuScience, Mathematics, and Technology, Singapore University of Technology and Design (SUTD), Singapore 487372, SingaporeMore by Qingyun Wu
- Ivan A. VerzhbitskiyIvan A. VerzhbitskiyPhysics Department, National University of Singapore, Singapore 117551, SingaporeInstitute of Materials Research and Engineering (IMRE), Agency for Science, Technology and Research (A*STAR), 2 Fusionopolis Way, Innovis #08-03, Singapore 138634, SingaporeMore by Ivan A. Verzhbitskiy
- Kenji WatanabeKenji WatanabeResearch Centre for Functional Materials, National Institute for Materials Science, Tsukuba 305-0047, JapanMore by Kenji Watanabe
- Takashi TaniguchiTakashi TaniguchiInternational Centre for Materials Nanoarchitectonics, National Institute for Materials Science, Tsukuba 305-0047, JapanMore by Takashi Taniguchi
- Michel BosmanMichel BosmanDepartment of Materials Science and Engineering, National University of Singapore, 9 Engineering Drive 1, Singapore 117575, SingaporeInstitute of Materials Research and Engineering (IMRE), Agency for Science, Technology and Research (A*STAR), 2 Fusionopolis Way, Innovis #08-03, Singapore 138634, SingaporeMore by Michel Bosman
- Yee Sin AngYee Sin AngScience, Mathematics, and Technology, Singapore University of Technology and Design (SUTD), Singapore 487372, SingaporeMore by Yee Sin Ang
- Lay Kee AngLay Kee AngScience, Mathematics, and Technology, Singapore University of Technology and Design (SUTD), Singapore 487372, SingaporeMore by Lay Kee Ang
- Maxim TrushinMaxim TrushinDepartment of Materials Science and Engineering, National University of Singapore, 9 Engineering Drive 1, Singapore 117575, SingaporeCentre for Advanced 2D Materials, National University of Singapore, Singapore 117546, SingaporeInstitute for Functional Intelligent Materials, National University of Singapore, Singapore 117544, SingaporeMore by Maxim Trushin
- Goki Eda*Goki Eda*Email: [email protected]Physics Department, National University of Singapore, Singapore 117551, SingaporeChemistry Department, National University of Singapore, Singapore 117543, SingaporeCentre for Advanced 2D Materials, National University of Singapore, Singapore 117546, SingaporeMore by Goki Eda
Abstract
Precisely controlled impurity doping is of fundamental significance in modern semiconductor technologies. Desired physical properties are often achieved at impurity concentrations well below parts per million level. For emergent two-dimensional semiconductors, development of reliable doping strategies is hindered by the inherent difficulty in identifying and quantifying impurities in such a dilute limit where the absolute number of atoms to be detected is insufficient for common analytical techniques. Here we report rapid high-contrast imaging of dilute single atomic impurities by using conductive atomic force microscopy. We show that the local conductivity is enhanced by more than 100-fold by a single impurity atom due to resonance-assisted tunneling. Unlike the closely related scanning tunneling microscopy, the local conductivity sensitively depends on the impurity energy level, allowing minority defects to be selectively imaged. We further demonstrate subsurface impurity detection with single monolayer depth resolution in multilayer materials.
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