Cascaded Logic Gates Based on High-Performance Ambipolar Dual-Gate WSe2 Thin Film TransistorsClick to copy article linkArticle link copied!
- Xintong LiXintong LiDepartment of Electrical and Computer Engineering, The University of Texas at Austin, Austin, Texas 78712, United StatesMore by Xintong Li
- Peng ZhouPeng ZhouDepartment of Electrical and Computer Engineering, The University of Texas at Dallas, Richardson, Texas 75080-3021, United StatesMore by Peng Zhou
- Xuan HuXuan HuDepartment of Electrical and Computer Engineering, The University of Texas at Dallas, Richardson, Texas 75080-3021, United StatesMore by Xuan Hu
- Ethan RiversEthan RiversDepartment of Electrical and Computer Engineering, The University of Texas at Austin, Austin, Texas 78712, United StatesMore by Ethan Rivers
- Kenji WatanabeKenji WatanabeResearch Center for Electronic and Optical Materials, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, JapanMore by Kenji Watanabe
- Takashi TaniguchiTakashi TaniguchiResearch Center for Materials Nanoarchitectonics, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, JapanMore by Takashi Taniguchi
- Deji AkinwandeDeji AkinwandeDepartment of Electrical and Computer Engineering, The University of Texas at Austin, Austin, Texas 78712, United StatesMore by Deji Akinwande
- Joseph S. FriedmanJoseph S. FriedmanDepartment of Electrical and Computer Engineering, The University of Texas at Dallas, Richardson, Texas 75080-3021, United StatesMore by Joseph S. Friedman
- Jean Anne C. Incorvia*Jean Anne C. Incorvia*Email: [email protected]Department of Electrical and Computer Engineering, The University of Texas at Austin, Austin, Texas 78712, United StatesMore by Jean Anne C. Incorvia
Abstract
Ambipolar dual-gate transistors based on low-dimensional materials, such as graphene, carbon nanotubes, black phosphorus, and certain transition metal dichalcogenides (TMDs), enable reconfigurable logic circuits with a suppressed off-state current. These circuits achieve the same logical output as complementary metal–oxide semiconductor (CMOS) with fewer transistors and offer greater flexibility in design. The primary challenge lies in the cascadability and power consumption of these logic gates with static CMOS-like connections. In this article, high-performance ambipolar dual-gate transistors based on tungsten diselenide (WSe2) are fabricated. A high on–off ratio of 108 and 106, a low off-state current of 100 to 300 fA, a negligible hysteresis, and an ideal subthreshold swing of 62 and 63 mV/dec are measured in the p- and n-type transport, respectively. We demonstrate cascadable and cascaded logic gates using ambipolar TMD transistors with minimal static power consumption, including inverters, XOR, NAND, NOR, and buffers made by cascaded inverters. A thorough study of both the control gate and the polarity gate behavior is conducted. The noise margin of the logic gates is measured and analyzed. The large noise margin enables the implementation of VT-drop circuits, a type of logic with reduced transistor number and simplified circuit design. Finally, the speed performance of the VT-drop and other circuits built by dual-gate devices is qualitatively analyzed. This work makes advancements in the field of ambipolar dual-gate TMD transistors, showing their potential for low-power, high-speed, and more flexible logic circuits.
Cited By
Smart citations by scite.ai include citation statements extracted from the full text of the citing article. The number of the statements may be higher than the number of citations provided by ACS Publications if one paper cites another multiple times or lower if scite has not yet processed some of the citing articles.
This article is cited by 17 publications.
- Jiehua Zhang, Baobao Xu, Yiyi Yang, Zhixin Xie, Haihua Xu. Dual-Terminal Ion-Modulation Multiplier-Based Ion-Doped Stacked Semiconducting Nanosheets for Multifunctional Biomedical Applications. ACS Applied Materials & Interfaces 2025, 17
(11)
, 16998-17007. https://doi.org/10.1021/acsami.4c18930
- Raksan Ko, Minseo Kim, Eva Bestelink, Patryk Golec, Jaehyun Hur, Radu A. Sporea, Hocheon Yoo. Operating Principles of Gate Gap on Charge Transport in Split Gate Logic Thin-Film Transistors. ACS Applied Electronic Materials 2024, 6
(12)
, 9134-9141. https://doi.org/10.1021/acsaelm.4c01760
- Zinan Ma, Peize Yuan, Lin Li, Xiaojie Tang, Xueping Li, Suicai Zhang, Leiming Yu, Yurong Jiang, Xiaohui Song, Congxin Xia. Optoelectronic Reconfigurable Logic Gates Based on Two-Dimensional Vertical Field-Effect Transistors. Nano Letters 2024, 24
(44)
, 14058-14065. https://doi.org/10.1021/acs.nanolett.4c04034
- Zhao Han, Yichi Zhang, Qing Mi, Jie You, Ningning Zhang, Zhenyang Zhong, Zuimin Jiang, Hui Guo, Huiyong Hu, Liming Wang, Zhangming Zhu. Reconfigurable Homojunction Phototransistor for Near-Zero Power Consumption Artificial Biomimetic Retina Function. ACS Nano 2024, 18
(43)
, 29968-29977. https://doi.org/10.1021/acsnano.4c10619
- Jiong Pan, Fan Wu, Zeda Wang, Shangjian Liu, Pengwen Guo, Jiaju Yin, Bingchen Zhao, He Tian, Yi Yang, Tian-Ling Ren. Multibarrier Collaborative Modulation Devices with Ultra-High Logic Operation Density. ACS Nano 2024, 18
(41)
, 28189-28197. https://doi.org/10.1021/acsnano.4c08009
- Ziyu Ming, Haoran Sun, Hu Wang, Zhe Sheng, Yue Wang, Zengxing Zhang. Full Two-Dimensional Ambipolar Field-Effect Transistors for Transparent and Flexible Electronics. ACS Applied Materials & Interfaces 2024, 16
(34)
, 45131-45138. https://doi.org/10.1021/acsami.4c06602
- Huijuan Wu, Zhongyu Liu, Bingkun Wang, Li Zheng, Shanshui Lian, Jinqiu Zhang, Shan Zhang, Guanglin Zhang, Zhongying Xue, Siwei Yang, Xinhong Cheng, Guqiao Ding, Zhiduo Liu, Caichao Ye, Gang Wang. Integration of PbS Quantum Dots with 3D-Graphene for Self-powered Broadband Photodetectors in Image Sensors. ACS Photonics 2024, 11
(3)
, 1342-1351. https://doi.org/10.1021/acsphotonics.3c01803
- Taehyun Park, Minseo Kim, Juhyung Seo, Young-Joon Kim, Amit Ranjan Trivedi, Joon-Kyu Han, Hocheon Yoo. Advancing device-based computing by simplifying circuit complexity. Device 2025, 3
(4)
, 100720. https://doi.org/10.1016/j.device.2025.100720
- Jiong Pan, Yike Zhang, Jiaju Yin, Pengwen Guo, Yi Yang, Tian-Ling Ren. Principles and Applications of Two-Dimensional Semiconductor Material Devices for Reconfigurable Electronics. Nanomaterials 2025, 15
(3)
, 201. https://doi.org/10.3390/nano15030201
- Chuanzheng Liao, Mengyao Zhang, Yurong Jiang, Suicai Zhang, Xueping Li, Leiming Yu, Xiaohui Song, Kang Liu, Ding Wang, Jianye Wang, Congxin Xia. A reconfigurable memristor diode based on a CuInP
2
S
6
/graphene lateral heterojunction. Nanoscale 2025, 17
(4)
, 2011-2019. https://doi.org/10.1039/D4NR03400G
- Aniello Pelella, Luca Camilli, Filippo Giubileo, Alla Zak, Maurizio Passacantando, Yao Guo, Kimberly Intonti, Arun Kumar, Antonio Di Bartolomeo. Ambipolar conduction in gated tungsten disulphide nanotube. Nanoscale 2025, 17
(4)
, 2052-2060. https://doi.org/10.1039/D4NR04877F
- Shibin Thomas, Victoria K. Greenacre, Jiapei Zhang, Nikolay Zhelev, Sami Ramadan, Yisong Han, Richard Beanland, Nema M. Abdelazim, Yasir J. Noori, Kees de Groot, Gillian Reid, Philip N Bartlett. Electrodeposition of 2D layered tungsten diselenide thin films using a single source precursor. Journal of Materials Chemistry C 2024, 12
(47)
, 19191-19199. https://doi.org/10.1039/D4TC02755H
- Guitian Qiu, Lingan Kong, Mengjiao Han, Qian Zhang, Majeed Ur Rehman, Jianxian Yi, Lede Xian, Xiankai Lin, Aumber Abbas, Jiwei Chen, Yingjie Luo, Wenbo Li, Zhongchao Wei, Hongyun Meng, Xiuliang Ma, Qijie Liang. Intralayer/Interlayer Codoping Stabilizes Polarity Modulation in 2D Semiconductors for Scalable Electronics. Advanced Science 2024, 11
(48)
https://doi.org/10.1002/advs.202408634
- Jiong Pan, Zeda Wang, Bingchen Zhao, Jiaju Yin, Pengwen Guo, Yi Yang, Tian-Ling Ren. Recent Progress of Non-Volatile Memory Devices Based on Two-Dimensional Materials. Chips 2024, 3
(4)
, 271-295. https://doi.org/10.3390/chips3040014
- Jiehua Zhang, Feng Li, Wenwen Chen, Baobao Xu, Yiyi Yang, Zhixin Xie, Haihua Xu. Solution-processed ambipolar ionic-gated transistors from 1D/2D heterojunctions of WSe2 and self-conversed SnO2/Se enabling high-sensitivity thermal sensing. Applied Physics Letters 2024, 125
(22)
https://doi.org/10.1063/5.0228989
- Yu Zhao, Tao Xiong, Yue-Yang Liu, Xiangwei Jiang. Reliability Improvement of 2-D WSe₂ FETs by Regulating Charge Trapping: An
Ab Initio
Demonstration. IEEE Transactions on Electron Devices 2024, 71
(10)
, 6410-6416. https://doi.org/10.1109/TED.2024.3438070
- Yang Shen, Jintian Gao, Zhanfeng Guo, Yanming Liu, He Tian. RRAM Mirrored and RRAM-Transistor Hybrid Single Device Logic Gates Based on Two-Dimensional Materials. IEEE Electron Device Letters 2024, 45
(1)
, 88-91. https://doi.org/10.1109/LED.2023.3332095
Article Views are the COUNTER-compliant sum of full text article downloads since November 2008 (both PDF and HTML) across all institutions and individuals. These metrics are regularly updated to reflect usage leading up to the last few days.
Citations are the number of other articles citing this article, calculated by Crossref and updated daily. Find more information about Crossref citation counts.
The Altmetric Attention Score is a quantitative measure of the attention that a research article has received online. Clicking on the donut icon will load a page at altmetric.com with additional details about the score and the social media presence for the given article. Find more information on the Altmetric Attention Score and how the score is calculated.