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Origins of Fermi Level Pinning for Ni and Ag Metal Contacts on Tungsten Dichalcogenides

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    Origins of Fermi Level Pinning for Ni and Ag Metal Contacts on Tungsten Dichalcogenides
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    ACS Nano

    Cite this: ACS Nano 2023, 17, 20, 20353–20365
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    https://doi.org/10.1021/acsnano.3c06494
    Published October 3, 2023
    Copyright © 2023 American Chemical Society
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    Abstract

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    Tungsten transition metal dichalcogenides (W-TMDs) are intriguing due to their properties and potential for application in next-generation electronic devices. However, strong Fermi level (EF) pinning manifests at the metal/W-TMD interfaces, which could tremendously restrain the carrier injection into the channel. In this work, we illustrate the origins of EF pinning for Ni and Ag contacts on W-TMDs by considering interface chemistry, band alignment, impurities, and imperfections of W-TMDs, contact metal adsorption mechanism, and the resultant electronic structure. We conclude that the origins of EF pinning at a covalent contact metal/W-TMD interface, such as Ni/W-TMDs, can be attributed to defects, impurities, and interface reaction products. In contrast, for a van der Waals contact metal/TMD system such as Ag/W-TMDs, the primary factor responsible for EF pinning is the electronic modification of the TMDs resulting from the defects and impurities with the minor impact of metal-induced gap states. The potential strategies for carefully engineering the metal deposition approach are also discussed. This work unveils the origins of EF pinning at metal/TMD interfaces experimentally and theoretically and provides guidance on further enhancing and improving the device performance.

    Copyright © 2023 American Chemical Society

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    Supporting Information

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    The Supporting Information is available free of charge at https://pubs.acs.org/doi/10.1021/acsnano.3c06494.

    • Interface chemistry and surface morphology of Ni/WSe2, Ni/WTe2, Ag/WS2, and Ag/WTe2; the fwhm’s of the TMD bulk crystal and Ag metal chemical states before and after Ag depositions; the binding energies of W-TMD states in W 4f7/2, S 2p3/2, and Se 3d5/2 spectra; ICP-MS results of W-TMDs; XPS spectra of the freshly exfoliated WS2 for STM/STS; freshly exfoliated WS2 surface with fewer defects; bias-dependent electronic variation and the depth variation of the concavities on the fresh exfoliated WS2 surface. The extraction of the band alignment by XPS (PDF)

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    Cited By

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    This article is cited by 13 publications.

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    ACS Nano

    Cite this: ACS Nano 2023, 17, 20, 20353–20365
    Click to copy citationCitation copied!
    https://doi.org/10.1021/acsnano.3c06494
    Published October 3, 2023
    Copyright © 2023 American Chemical Society
    Request reuse permissions

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