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Spatiotemporal Observation of Quasi-Ballistic Transport of Electrons in Graphene

  • Ryan J. Scott
    Ryan J. Scott
    Department of Physics and Astronomy, The University of Kansas, Lawrence, Kansas 66045, United States
  • Pavel Valencia-Acuna
    Pavel Valencia-Acuna
    Department of Physics and Astronomy, The University of Kansas, Lawrence, Kansas 66045, United States
  • , and 
  • Hui Zhao*
    Hui Zhao
    Department of Physics and Astronomy, The University of Kansas, Lawrence, Kansas 66045, United States
    *E-mail: [email protected]
    More by Hui Zhao
Cite this: ACS Nano 2023, 17, 24, 25368–25376
Publication Date (Web):December 13, 2023
https://doi.org/10.1021/acsnano.3c08816
Copyright © 2023 American Chemical Society

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    Abstract

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    We report spatiotemporal observations of room-temperature quasi-ballistic electron transport in graphene, which is achieved by utilizing a four-layer van der Waals heterostructure to generate free charge carriers. The heterostructure is formed by sandwiching a MoS2 and MoSe2 heterobilayer between two graphene monolayers. Transient absorption measurements reveal that the electrons and holes separated by the type-II interface between MoS2 and MoSe2 can transfer to the two graphene layers, respectively. Transient absorption microscopy measurements, with high spatial and temporal resolution, reveal that while the holes in one graphene layer undergo a classical diffusion process with a large diffusion coefficient of 65 cm2 s–1 and a charge mobility of 5000 cm2 V–1 s–1, the electrons in the other graphene layer exhibit a quasi-ballistic transport feature, with a ballistic transport time of 20 ps and a speed of 22 km s–1, respectively. The different in-plane transport properties confirm that electrons and holes move independently of each other as charge carriers. The optical generation of ballistic charge carriers suggests potential applications for such van der Waals heterostructures as optoelectronic materials.

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    The Supporting Information is available free of charge at https://pubs.acs.org/doi/10.1021/acsnano.3c08816.

    • Additional data for charge transfer in MoSe2/MoSe2 and graphene/MoS2/MoSe2 heterostructure samples; additional data for hole diffusion and electron quasi-ballistic transport; contrast analysis of MoS2 and MoSe2 flakes; schematics of the transient absorption microscopy setup (PDF)

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